This is information on a product in full production. September 2014 DocID023109 Rev 7 1/12 12 SCT30N120 Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ , N-channel in HiP247™ package Datasheet - production data Figure 1. Internal schematic diagram Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature • Very high operating temperature capability (200 °C) • Very fast and robust intrinsic body diode • Low capacitance • Easy to drive Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supply Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry- standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Note: The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 3: Package mechanical data. 1 2 3 HiP247™ Table 1. Device summary Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247™ Tube www.st.com
12
Embed
Silicon carbide Power MOSFET: 45 A, 1200 V, 80 m, N ...
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
This is information on a product in full production.
September 2014 DocID023109 Rev 7 1/12
12
SCT30N120
Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247™ package
Datasheet - production data
Figure 1. Internal schematic diagram
Features• Very tight variation of on-resistance vs.
temperature
• Slight variation of switching losses vs. temperature
• Very high operating temperature capability (200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Easy to drive
Applications• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supply
DescriptionThis silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Note: The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 3: Package mechanical data.
Figure 6. Transfer characteristics Figure 7. Power dissipation
ID
10
1
0.10.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS
(on)
100μs
1ms
10ms
1000
AM17527v1
10 10 10 10 10 tp(s)0
0.1
K
0.2
0.3
0.4
0.5
-6 -5 -4 -3 -2 10-1
AM17526v1
ID
30
20
10
00 2 VDS(V)6
(A)
4 8
40
50
60
70
80VGS=20V
18V
16V
14V
12V
10V
AM17518v1 ID
30
20
10
00 VDS(V)
(A)
40
50
60
70
80VGS=20V
18V16V
14V
12V
10V
2 64 8
AM17519v1
ID
15
10
5
00 4 VGS(V)8
(A)
2 6 10
20
25
12
30
35VDS=20V
200°C25°C
AM17521v1PD
-50 0 TC(°C)
(W)
50 1000
50
100
150
200
250TJ=200°C
150
AM17525v1
DocID023109 Rev 7 7/12
SCT30N120 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Switching energy vs. drain current Figure 11. Switching energy vs. junction temperature
Figure 12. Normalized BVDSS vs. temperature Figure 13. Normalized gate threshold voltage vs. temperature
VDD=800VID=20A
VGS
4
00 20 Qg(nC)
(V)
80
8
40 60 100
12
16
AM17529v1 C
1000
100
100 600 VDS(V)
(pF)
400 800
Ciss
Coss
Crss
200
AM17528v1
E
100
0 4 ID(A)
(μJ)
2 6
Eon
Eoff
8
Etot
10 12 14 16 18
200
300
400
500
600
700
800
0
VDD=VCLAMP=800V
VGS=-2V/20VRG=6.8ΩTJ=25°C ,
AM17530v1E
100
25 50 TJ(°C)
(μJ)
Eon
Eoff
75
Etot
100 125
200300400500600700800
0
90010001100
VDD=VCLAMP=800V
VGS=-2V/20VRG=6.8ΩID=20V ,
AM17531v1
BVDSS
-50 0 TJ(°C)
(norm)
50 1000.94
0.96
0.98
1.00
1.02
1.04ID=1mA
150
AM17523v1 VGS(th)
0.6
0.4
0.2
0-50 0 TJ(°C)
(norm)
0.8
50 100 150
ID=1mA
1.2
1.0
1.4
1.6
AM17522v1
Electrical characteristics SCT30N120
8/12 DocID023109 Rev 7
Figure 14. Normalized on-resistance vs. temperature
Figure 15. Body diode characteristics
RDS(on)
2.4
2.0
1.2
0.4
TJ(°C)
(norm)
7525 50 100 125 150 175
0.8
0
1.6
2.8
3.2
VGS=20VID=20A
AM17520v1VSD -5 -3
ISD(A)
(V) -4 -2 -1
-4
-2
TJ=-55°C
TJ=200°C
TJ=25°C
00
-8
-6
-12
-10
-16
-14
-18
AM17524v1
DocID023109 Rev 7 9/12
SCT30N120 Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
25-Sep-2014 7 Document status promoted from preliminary to production data.
SCT30N120
12/12 DocID023109 Rev 7
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.