Top Banner
Optical amplifiers and their applications Ref: Optical Fiber Communications by: G. Keiser; 3 rd edition Depend on Source of Losses:
32

Semiconductor Optical Amplifiers

May 08, 2023

Download

Documents

Khang Minh
Welcome message from author
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Page 1: Semiconductor Optical Amplifiers

Optical amplifiers and their applications

Ref: Optical Fiber Communications by:

G. Keiser; 3rd edition

Depend on

Source of Losses:

Page 2: Semiconductor Optical Amplifiers

Basic operation of optical amplifiers

Page 3: Semiconductor Optical Amplifiers

Optical Amplifiers

Two main classes of optical amplifiers include:

Semiconductor Optical Amplifiers (SOA)

Doped Fiber Amplifiers (DFA)

Page 4: Semiconductor Optical Amplifiers

Semiconductor Optical Amplifiers

There are two types of SOAs:

--- Fabry- Perot amplifiers (FPA)

When the light enters FPA it gets amplified as it reflects back and forth

between the mirrors until emitted at a higher intensity.

It is sensitive to temperature and input optical frequency.

---Non-resonant traveling-wave amplifiers (TWA)

It is the same as FPA except that the end facets are either

antireflection coated or cleaved at an angle so that internal reflection

does not take place and the input signal gets amplified only once

during a single pass through the device. They widely used because

they have a large optical bandwidth, and low polarization sensitivity.

Ref: Optical Fiber Communications by:

G. Keiser; 3rd edition

Page 5: Semiconductor Optical Amplifiers

External Pumping

External pumping injection creates population inversion similar to LASERs.

The rate equations can be defined as:

r

stp

tntRtR

t

tn

)()()(

)(

qd

tJtRp

)()(

is the external pumping rate, J(t) is the current density, d is the

active layer thickness, and τr is the combined time constant

coming from spontaneous-carrier recombination mechanism.

Rst(t) is the stimulated emission and it is equal to:

phgphthgst NgvNnnavtR )()(

Non-resonant traveling-wave amplifiers (TWA)

Page 6: Semiconductor Optical Amplifiers

External Pumping (Cont…)

))(( wdhvv

PN

g

sph

where vg is the group velocity of the incident light, Г, optical confinement

factor, a is the gain constant, nth is threshold carrier density, Nph is the

photon density and g is the overall gain per unit of length.

where Ps is the power of optical signal, w and d are width and the

thickness of active area respectively.

Example…

Under steady state condition, variation of n vs time is zero, therefore:

r

stp

nRR

Page 7: Semiconductor Optical Amplifiers

External Pumping (cont…)

Substituting for Rp and Rst and solving

for g yields:

satphphrphg

r

th

NN

g

aNv

n

qd

J

g;

0

/1)/(1

rg

satphav

N

1

;

r

th

r

n

qd

Jag

0

Saturation photon density

go is the zero or small-signal gain

per unit of length (in the absence of the signal input)

Steady state gain

per unit length

Typical values: I = 100 mA, L x W x d=500 x 5 x 0.5 µm3, Γ = o.3 – 0.5, nth=1018 cm-3,

a= 2 x 10-16 cm2, life time = 1 nS, group velocity = 2 x 108 m/s,

optical signal power = 1µW

Page 8: Semiconductor Optical Amplifiers

Amplifier Gain

Amplifier gain or signal gain G is defined as:

ins

outs

P

PG

,

,

LzgLgG m expexp_

or as we saw in the case of laser:

where, gm , α, and L are the material gain coefficient, the effective

absorption coefficient of the material and amplifier length respectively. g(z)

is the overall gain per unit of length. It is depends on the carrier density

and signal wavelength.

g(z) can written as:

satamp

s

P

zP

gzg

,

0

)(1

)(

go, the unsaturated medium gain per unit of length in

the absence of signal input,

An important

parameter

G is increasing with device length, however, the internal gain is limited by

gain saturation. G is depended on the optical input intensity, as it increases

EHP depleted from the active region. For sufficiently large optical input,

there will not be enough EHP to be stimulated.

Page 9: Semiconductor Optical Amplifiers

Amplifier Gain

Ps is the internal signal power at point z. Pamp.sat is the amplifier

saturation power defined as: internal power level at which the

gain/(unit length) has been halved.

The increase in the light power in incremental length of dz can

be expressed as:

dzzPzgdP s )()(

dPPzP

dzgsatamps

,

0

1

)(

1

outPs

inPs satamps

L

dPPzP

dzg

,

, ,0

0

1

)(

1

G

G

P

PG

ins

satamp 0

,

,ln1

Which can show:

now

and finally one can see that:

where Go = exp (goL) is the single-pass gain in the absence of

light.

Page 10: Semiconductor Optical Amplifiers

Amplifier gain versus power

So, using the amplifier must be

done at appropriate places

where the optical power is

really low.

Page 11: Semiconductor Optical Amplifiers

Erbium-Doped Fiber Optic AmplifiersErbium energy-level diagram and

amplification mechanism

Page 12: Semiconductor Optical Amplifiers

EDFA configurations

Page 13: Semiconductor Optical Amplifiers

EDFA Power-Conversion Efficiency (PCE) and Gain

The input and output power of an EDFA can be

expressed:

inp

s

p

insouts PPP ,,,

1,

,

,

,,

s

p

inp

outs

inp

insouts

P

P

P

PPPCE

The Power Conversion Efficiency (PCE) is defined as

(always less than unity)

Maximum output signal power

depends on wavelength ratio

of the pump to the signal. Pumping works only

When λp< λs and for appropriate gain Ps,in << Pp,in

It is equal to 1 when all

pump photons are

converted to signal

photons

Page 14: Semiconductor Optical Amplifiers

Optical Amplifiers

1

,

,

G

P

P

inp

s

p

ins

In order to achieve a specific maximum gain G, the input signal

power can NOT exceed a value given by

Example…

We can also write the amplifier gain as:

ins

inp

s

p

ins

outs

P

P

P

PG

,

,

,

,1

inpspins PP ,, )/(

When input signal

power is very large

i.e.

then the maximum G is unity

Page 15: Semiconductor Optical Amplifiers

EDFA Power-Conversion Efficiency (PCE) and Gain

LNG eexpmax

where N is the rare-earth element concentration and σe is the signal-

emission cross section.

Therefore the maximum gain or power will be defined as:

ins

inp

s

p

eP

PLG

,

,1,expmin

inp

s

p

inseinsouts PPLPP ,,,, ,expmin

Optical Amplifiers

The maximum gain in a 3 level laser medium of length L can also be given as

follow (in addition to pump power, the gain depends on the fiber length)

Page 16: Semiconductor Optical Amplifiers

Gain versus EDFA length

Page 17: Semiconductor Optical Amplifiers

Absorption and Emission Cross-Sections in EDFA

• The effect of absorption and emission efficiencies in external pumping in EDFA are realized by defining new parameters called Absorption Cross-Section, σa and Emission Cross-Section, σe respectively.

• σa determines the pumping rate. If the pumping power is Pp and Er ground state population is N0, the pumping rate is WpN0 where,

• σe determines the medium gain, g= σeN2. N2 is metastable (inversion layer) population>N0

• Stimulated emission rate, Rs is:

Where Ps-in is the incident light power.

• Therefore the pumping gain will be:

L is the length of the pump.

Ah

PW

pa

p

Ah

NPgNVR inse

phgs

2

LNN

inp

outp

paee

P

PG

)( 02

Page 18: Semiconductor Optical Amplifiers

Example

Let’s calculate the pump power needed per unit

length of Er –doped optical fiber to establish a small-

signal optical gain of 0.4 dB/m at 1.55 micron.

Assume that the confinement factor is =0.7. Er3+ is

doped at the center with a 2 micron diameter with

concentration of 1018 ions/ cm3. Assume a pump

wavelength of 1.48 micron is used. The

spontaneous emission lifetime is 10 msec.

Page 19: Semiconductor Optical Amplifiers

Components for Optical Communications

• Passive Components

Couplers,

Attenuators

Equalizers,

Isolators

WDM

• Active Components

Modulators,

Diodes,

Switches,

Routers

Materials for self-studies

Page 20: Semiconductor Optical Amplifiers

Some applications of Light polarization

Page 21: Semiconductor Optical Amplifiers

Optical Diode

Rutile Half wave

plate

Faraday

Rotator

RutileHalf Wave Plate

Faraday Rotator Calcite, Rutile

Page 22: Semiconductor Optical Amplifiers

Transmission windows

Page 23: Semiconductor Optical Amplifiers

WDM

Page 24: Semiconductor Optical Amplifiers

Optical Interference

Page 25: Semiconductor Optical Amplifiers

Fiber Bragg grating

Page 26: Semiconductor Optical Amplifiers

Fiber Bragg grating fabricationPhase Mask: Direct Imprinting

0th order

(Suppressed)

Diffraction

m = -1

Diffraction

m = +1

Phase MaskΛPM

Ge doped

Fiber

248 nm Laser

Page 27: Semiconductor Optical Amplifiers

Reflection grating

Page 28: Semiconductor Optical Amplifiers

Typical WDM Network

Page 29: Semiconductor Optical Amplifiers

Simple demultiplexer function

Page 30: Semiconductor Optical Amplifiers

Extended add/drop multiplexer

Page 31: Semiconductor Optical Amplifiers

Tunable optical filter

Page 32: Semiconductor Optical Amplifiers