RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 60 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. 2600 MHz Typical Doherty Single--Carrier W--CDMA Performance: V DD = 28 Vdc, I DQA = 800 mA, V GSB = 0.8 Vdc, P out = 60 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency G ps (dB) D (%) Output PAR (dB) ACPR (dBc) 2496 MHz 14.5 42.5 7.9 –30.7 2590 MHz 15.0 43.4 7.9 –32.2 2690 MHz 14.9 43.3 7.8 –33.5 Features Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Document Number: A2T26H300--24S Rev. 0, 9/2015 Freescale Semiconductor Technical Data 2496–2690 MHz, 60 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR A2T26H300--24SR6 Figure 1. Pin Connections (Top View) RF outA /V DSA RF outB /V DSB RF inA /V GSA RF inB /V GSB VBW A (1) VBW B (1) 6 3 1 5 2 4 Carrier Peaking NI--1230S--4L2L 1. Device cannot operate with V DD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2015. All rights reserved.
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A2T26H300--24SR6
1RF Device DataFreescale Semiconductor, Inc.
RF Power LDMOS TransistorN--Channel Enhancement--Mode Lateral MOSFETThis 60 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 2496to 2690 MHz.
2600 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,IDQA = 800 mA, VGSB = 0.8 Vdc, Pout = 60 W Avg., Input SignalPAR = 9.9 dB @ 0.01% Probability on CCDF.
FrequencyGps(dB)
D(%)
Output PAR(dB)
ACPR(dBc)
2496 MHz 14.5 42.5 7.9 –30.7
2590 MHz 15.0 43.4 7.9 –32.2
2690 MHz 14.9 43.3 7.8 –33.5
Features
Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C
Operation Designed for Digital Predistortion Error Correction Systems
Document Number: A2T26H300--24SRev. 0, 9/2015
Freescale SemiconductorTechnical Data
2496–2690 MHz, 60 W AVG., 28 VAIRFAST RF POWER LDMOS
TRANSISTOR
A2T26H300--24SR6
Figure 1. Pin Connections
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
VBWB(1)
6
3
1 5
2 4
Carrier
Peaking
NI--1230S--4L2L
1. Device cannot operate with VDD currentsupplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2015. All rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
A2T26H300--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature Range (1,2) TJ –40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to CaseCase Temperature 79C, 60 W Avg., W--CDMA, 28 Vdc, IDQA = 800 mA,VGSB = 0.8 Vdc, 2590 MHz
Gate Threshold Voltage(VDS = 10 Vdc, ID = 160 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage(VDD = 28 Vdc, IDA = 800 mAdc, Measured in Functional Test)
VGSA(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage(VGS = 10 Vdc, ID = 1.6 Adc)
VDS(on) 0.1 0.2 0.3 Vdc
On Characteristics -- Side B, Peaking
Gate Threshold Voltage(VDS = 10 Vdc, ID = 240 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.2. MTTF calculator available at http://www.freescale.com/rf/calculators.3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf and search for AN1955.4. Each side of device measured separately.
1. Part internally matched both on input and output.2. Measurements made with device in an asymmetrical Doherty configuration.3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4RF Device Data
Freescale Semiconductor, Inc.
A2T26H300--24SR6
Figure 2. A2T26H300--24SR6 Test Circuit Component Layout
R1
C1C2
C3C4
C5C6
C7
C8
C9 C10
C11
C12
C13
C14C15
C16
C17
C18
Z1
R2
R3
CUTOUTAREA
VGGA
C
P
A2T26H300--24SRev. 2
D67508VDDA
VGGB
VDDB
Table 6. A2T26H300--24SR6 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load PullTuner and TestCircuit
DeviceUnderTest
Zsource Zin Zload
Output Load PullTuner and TestCircuit
8RF Device Data
Freescale Semiconductor, Inc.
A2T26H300--24SR6
Table 9. Peaking Side Load Pull Performance — Maximum Power TuningVDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 20. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–2.5
–3.5
IMAGINARY()
21 7
–3
–4.5
Figure 21. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 22. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 23. P3dB Load Pull AM/PM Contours ()
REAL ()
3
–4
–2
–5
–5.5
4 5–6
6
P
E
51
5252.5
5353.554
54.5
51 60
58
50
52
P
E
52
46 48
5046
52
54
5456
10.5
11
12
P
E
11.5
–28
–30
–32
–34
–36
–38
P
E
10
11 –40
–42
–44
51.5
A2T26H300--24SR6
13RF Device DataFreescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14RF Device Data
Freescale Semiconductor, Inc.
A2T26H300--24SR6
A2T26H300--24SR6
15RF Device DataFreescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes AN1955: Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS DevicesSoftware Electromigration MTTF Calculator RF High Power Model s2p FileDevelopment Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Sept. 2015 Initial Release of Data Sheet
16RF Device Data
Freescale Semiconductor, Inc.
A2T26H300--24SR6
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