RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. Typical Single--Carrier W--CDMA Characterization Performance: V DD = 28 Vdc, I DQ = 1400 mA, P out = 55 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency G ps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 19.5 32.4 7.2 –34.4 –20 2140 MHz 19.8 32.8 7.2 –33.7 –19 2170 MHz 20.2 33.1 7.1 –33.1 –16 Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. Document Number: AFT21S240--12S Rev. 0, 4/2014 Freescale Semiconductor Technical Data 2110–2170 MHz, 55 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR AFT21S240--12SR3 Figure 1. Pin Connections NI--880XS--2L2L (Top View) RF in /V GS VBW (1) VBW (1) 4 2 1 3 RF out /V DS 1. Device cannot operate with the V DD current supplied through pin 2 and pin 4. Freescale Semiconductor, Inc., 2014. All rights reserved.
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AFT21S240--12SR3
1RF Device DataFreescale Semiconductor, Inc.
RF Power LDMOS TransistorN--Channel Enhancement--Mode Lateral MOSFETThis 55 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Characterization Performance:VDD = 28 Vdc, IDQ = 1400 mA, Pout = 55 W Avg., Input SignalPAR = 9.9 dB @ 0.01% Probability on CCDF.
FrequencyGps(dB)
D(%)
Output PAR(dB)
ACPR(dBc)
IRL(dB)
2110 MHz 19.5 32.4 7.2 –34.4 –20
2140 MHz 19.8 32.8 7.2 –33.7 –19
2170 MHz 20.2 33.1 7.1 –33.1 –16
Features
Greater Negative Gate--Source Voltage Range for Improved Class COperation
Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT21S240--12SRev. 0, 4/2014
Freescale SemiconductorTechnical Data
2110–2170 MHz, 55 W AVG., 28 VAIRFAST RF POWER LDMOS
TRANSISTOR
AFT21S240--12SR3
Figure 1. Pin Connections
NI--880XS--2L2L
(Top View)
RFin/VGS
VBW (1)
VBW (1)
4
2
1 3 RFout/VDS
1. Device cannot operate with the VDD currentsupplied through pin 2 and pin 4.
Freescale Semiconductor, Inc., 2014. All rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
AFT21S240--12SR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature Range (1,2) TJ –40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to CaseCase Temperature 75C, 55 W CW, 28 Vdc, IDQ = 1400 mA, 2140 MHz
Gate Threshold Voltage(VDS = 10 Vdc, ID = 280 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage(VGS = 10 Vdc, ID = 2.8 Adc)
VDS(on) 0.1 0.15 0.3 Vdc
Functional Tests (4) (In Freescale Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 55 W Avg., f = 2170 MHz,Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHzChannel Bandwidth @ 5 MHz Offset.
Power Gain Gps 19.5 20.4 22.5 dB
Drain Efficiency D 31.5 33.9 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.5 6.9 — dB
Adjacent Channel Power Ratio ACPR — –32.4 –30.0 dBc
Input Return Loss IRL — --16 --9 dB
1. Continuous use at maximum temperature will affect MTTF.2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.4. Part internally matched both on input and output.
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load PullTuner and TestCircuit
DeviceUnderTest
Zsource Zin Zload
Output Load PullTuner and TestCircuit
AFT21S240--12SR3
9RF Device DataFreescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
--0.5
--1.5IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1--4
3.5 4
--2
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1--4
3.5 4
--2
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 9. P1dB Load Pull Output Power Contours (dBm)
REAL ()
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1
Figure 10. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 11. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 12. P1dB Load Pull AM/PM Contours ()
REAL ()
--43.5 4
--2
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1--4
3.5 4
--2
P
E
50.551
51.5
52
52.5
53
53.554
50.5
P
E
64 62
60
58
56545250 54
50
P
E22
21
21.5
20.52019.5
22.5
2323.5
P
E
--14
--16
--18
--20--22
--24
--26
10RF Device Data
Freescale Semiconductor, Inc.
AFT21S240--12SR3
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1--4
3.5 4
--2
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1--4
3.5 4
--2
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 13. P3dB Load Pull Output Power Contours (dBm)
REAL ()
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1
Figure 14. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 15. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 16. P3dB Load Pull AM/PM Contours ()
REAL ()
--43.5 4
--2
--0.5
--1.5
IMAGINARY()
1.5 2 2.5 4.5
--1
--2.5
--3
3
--3.5
1--4
3.5 4
--2
P
E
5251.5
52.5
53
53.554
54.555
64 62
60 58
56
P
E
66
68
5254 56
P
E
2121.5 20.5
20
19.5
19
18.51817.5
P
E
--20
--22
--24
--26
--28--30--32--34
AFT21S240--12SR3
11RF Device DataFreescale Semiconductor, Inc.
PACKAGE DIMENSIONS
12RF Device Data
Freescale Semiconductor, Inc.
AFT21S240--12SR3
AFT21S240--12SR3
13RF Device DataFreescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to theSoftware & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Apr. 2014 Initial Release of Data Sheet
14RF Device Data
Freescale Semiconductor, Inc.
AFT21S240--12SR3
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Freescale reserves the right to make changes without further notice to any productsherein. Freescale makes no warranty, representation, or guarantee regarding thesuitability of its products for any particular purpose, nor does Freescale assume anyliability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation consequential or incidentaldamages. “Typical” parameters that may be provided in Freescale data sheets and/orspecifications can and do vary in different applications, and actual performance mayvary over time. All operating parameters, including “typicals,” must be validated foreach customer application by customer’s technical experts. Freescale does not conveyany license under its patent rights nor the rights of others. Freescale sells productspursuant to standard terms and conditions of sale, which can be found at the followingaddress: freescale.com/SalesTermsandConditions.
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