RF LDMOS Wideband Integrated Power Amplifiers The MMRF2010N is a 2--stage RFIC designed for IFF transponder applications operating from 1030 to 1090 MHz. These devices are suitable for use in pulse applications such as IFF and secondary radar transponders. Narrowband Performance: (50 Vdc, T A = 25C) Frequency (MHz) Signal Type P out (W) G ps (dB) 2nd Stage Eff. (%) 1090 (1) Pulse (128 sec, 10% Duty Cycle) 250 Peak 32.1 61.4 Typical Wideband Performance (50 Vdc, T A = 25C) Frequency (MHz) (2) Signal Type P out (W) G ps (dB) 2nd Stage Eff. (%) 1030 Pulse (128 sec, 10% Duty Cycle) 250 Peak 32.5 59.1 1090 30.1 60.6 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR P in (W) Test Voltage Result 1090 (1) Pulse (128 sec, 10% Duty Cycle) > 10:1 at all Phase Angles 0.345 W Peak (3 dB Overdrive) 50 No Device Degradation 1. Measured in 1090 MHz narrowband test circuit. 2. Measured in 1030–1090 MHz reference circuit. Features Characterized over 1030–1090 MHz On--chip input (50 ohm) and interstage matching Single ended Integrated ESD protection Low thermal resistance Integrated quiescent current temperature compensation with enable/disable function (3) Typical Applications Driver PA for high power pulse applications IFF and secondary radar 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family . and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 and AN1987. Document Number: MMRF2010N Rev. 0, 10/2015 Freescale Semiconductor T echnical Data 1030–1090 MHz, 250 W PEAK, 50 V RF LDMOS INTEGRATED POWER AMPLIFIERS MMRF2010N MMRF2010GN TO--270WB--14 PLASTIC MMRF2010N TO--270WBG--14 PLASTIC MMRF2010GN Freescale Semiconductor, Inc., 2015. All rights reserved.
21
Embed
RF LDMOS Wideband Integrated Power Amplifiers …cache.freescale.com/files/rf_if/doc/data_sheet/MMRF20… · · 2016-03-12MMRF2010N MMRF2010GN 1 RF Device Data Freescale Semiconductor,
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
MMRF2010N MMRF2010GN
1RF Device DataFreescale Semiconductor, Inc.
RF LDMOS Wideband IntegratedPower AmplifiersThe MMRF2010N is a 2 -- stage RFIC designed for IFF transponder
applications operating from 1030 to 1090 MHz. These devices are suitable foruse in pulse applications such as IFF and secondary radar transponders.
Narrowband Performance: (50 Vdc, TA = 25C)
Frequency(MHz) Signal Type
Pout(W)
Gps(dB)
2nd Stage Eff.(%)
1090 (1) Pulse(128 sec, 10% Duty Cycle)
250 Peak 32.1 61.4
Typical Wideband Performance (50 Vdc, TA = 25C)
Frequency(MHz)(2) Signal Type
Pout(W)
Gps(dB)
2nd Stage Eff.(%)
1030 Pulse(128 sec, 10% Duty Cycle)
250 Peak 32.5 59.1
1090 30.1 60.6
Load Mismatch/Ruggedness
Frequency(MHz) Signal Type VSWR
Pin(W)
TestVoltage Result
1090 (1) Pulse(128 sec, 10%Duty Cycle)
> 10:1 at allPhase Angles
0.345 WPeak(3 dB
Overdrive)
50 No DeviceDegradation
1. Measured in 1090 MHz narrowband test circuit.2. Measured in 1030–1090 MHz reference circuit.
Features
Characterized over 1030–1090 MHz On--chip input (50 ohm) and interstage matching Single ended Integrated ESD protection Low thermal resistance Integrated quiescent current temperature compensation with
enable/disable function (3)
Typical Applications
Driver PA for high power pulse applications IFF and secondary radar
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. and to AN1987, Quiescent CurrentControl for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 and AN1987.
Document Number: MMRF2010NRev. 0, 10/2015
Freescale SemiconductorTechnical Data
1030–1090 MHz, 250 W PEAK, 50 VRF LDMOS INTEGRATEDPOWER AMPLIFIERS
MMRF2010NMMRF2010GN
TO--270WB--14PLASTIC
MMRF2010N
TO--270WBG--14PLASTIC
MMRF2010GN
Freescale Semiconductor, Inc., 2015. All rights reserved.
Note: Exposed backside of the package isthe source terminal for the transistors.
VDS1
N.C.
RFin
N.C.
RFout /VDS2
1234
78
14
N.C.91011
VGS2VGS1
RFin
RFin
Thermal Sense
RFin
RFout Sense
RFout /VDS213
6
12
5
Thermal Sense
RFout Sense
Stage 1 Stage 2
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +100 Vdc
Gate--Source Voltage VGS –6, +10 Vdc
Operating Voltage VDD 50, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to 150 C
Operating Junction Temperature Range (2,3) TJ –40 to 225 C
Input Power Pin 25 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (3,4) Unit
Thermal Impedance, Junction to CasePulse: Case Temperature 81C, 250 W Peak, 128 sec Pulse Width, 10% DutyCycle, 1090 MHzStage 1, 50 Vdc, IDQ1 = 80 mAStage 2, 50 Vdc, IDQ2 = 150 mA
ZJC
1.10.15
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) Class 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) Class A, passes 150 V
Charge Device Model (per JESD22--C101) Class II, passes 200 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. and to AN1987, Quiescent CurrentControl for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 and AN1987.
2. Continuous use at maximum temperature will affect MTTF.3. MTTF calculator available at http://www.freescale.com/rf/calculators.4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
1. Part internally input matched.2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
4RF Device Data
Freescale Semiconductor, Inc.
MMRF2010N MMRF2010GN
TYPICAL CHARACTERISTICS
Figure 3. Normalized IDQ versus Case Temperature
NORMALIZED
I DQ
TC, CASE TEMPERATURE (C)
1.2
1.15
1.05
1.1
1
0.95
0.9
0.85
0.8100--50 0--25 25 50 75
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature -- Pulse
Note: MTTF value represents the total cumulative operating timeunder indicated test conditions.
MTTF calculator available at: http://www.freescale.com/rf/calculators
107
106
105
110 130 150 170 190
MTTF(HOURS)
210 230
108
ID = 6.52 Amps8.30 Amps
--0.008
Slope(mA/C)
--0.12
9.36 Amps
IDQ1
IDQ2
VDD = 50 VdcPulse Width = 128 sec10% Duty Cycle
IDQ2
IDQ1
VDD = 50 VdcIDQ1 = 80 mAIDQ2 = 150 mA
MMRF2010N MMRF2010GN
5RF Device DataFreescale Semiconductor, Inc.
1030–1090 MHz REFERENCE CIRCUIT — 1.97 x 2.76 (5.0 cm x 7.0 cm)
Zsource = Test circuit input impedance as measured fromgate to ground.
Zload = Test circuit impedance as measured fromdrain to ground.
Figure 9. Series Equivalent Source and Load Impedance — 1090 MHz
InputMatchingNetwork
DeviceUnderTest
OutputMatchingNetwork
Zsource Zload5050
MMRF2010N MMRF2010GN
9RF Device DataFreescale Semiconductor, Inc.
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE
Table 9. 1090 MHz Narrowband Performance (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ1 = 80 mA,IDQ2 = 150 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle
Characteristic Symbol Min Typ Max Unit
Power Gain Gps 30.5 32.1 34.0 dB
2nd Stage Drain Efficiency D 57.0 61.4 — %
1. Part internally input matched.2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
10RF Device Data
Freescale Semiconductor, Inc.
MMRF2010N MMRF2010GN
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4 x 5 (10.2 cm x 12.7 cm)
Zsource = Test circuit impedance as measured fromgate to ground.
Zload = Test circuit impedance as measured fromdrain to ground.
Figure 15. Narrowband Series Equivalent Source and Load Impedance — 1090 MHz
InputMatchingNetwork
DeviceUnderTest
OutputMatchingNetwork
Zsource Zload
5050
MMRF2010N MMRF2010GN
13RF Device DataFreescale Semiconductor, Inc.
Figure 16. PCB Pad Layout for TO--270WB--14
2X SOLDER PADS
(14.99)0.590
(9.45)0.372(1)
(18.36)0.723(1)
(0.51)0.020
(1.02)0.040
(8.94)0.352(1)
12X SOLDER PADS
1. Slot dimensions are minimum dimensions and exclude milling tolerances.
(mm)Inches
(5.61)0.221
(4.57)0.180
Solder pad withthermal via structure.
(7.87)0.310
(0.51)0.020
(1.02)0.040
(8.92)0.351
(11.76)0.463
(5.61)0.221
(4.57)0.180
(18.29)0.720
Figure 17. PCB Pad Layout for TO--270WBG--14
14RF Device Data
Freescale Semiconductor, Inc.
MMRF2010N MMRF2010GN
PACKAGE DIMENSIONS
MMRF2010N MMRF2010GN
15RF Device DataFreescale Semiconductor, Inc.
16RF Device Data
Freescale Semiconductor, Inc.
MMRF2010N MMRF2010GN
MMRF2010N MMRF2010GN
17RF Device DataFreescale Semiconductor, Inc.
18RF Device Data
Freescale Semiconductor, Inc.
MMRF2010N MMRF2010GN
MMRF2010N MMRF2010GN
19RF Device DataFreescale Semiconductor, Inc.
20RF Device Data
Freescale Semiconductor, Inc.
MMRF2010N MMRF2010GN
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device FamilyEngineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS DevicesSoftware
Electromigration MTTF CalculatorDevelopment Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Oct. 2015 Initial Release of Data Sheet
MMRF2010N MMRF2010GN
21RF Device DataFreescale Semiconductor, Inc.
How to Reach Us:
Home Page:freescale.com
Web Support:freescale.com/support
Information in this document is provided solely to enable system and softwareimplementers to use Freescale products. There are no express or implied copyrightlicenses granted hereunder to design or fabricate any integrated circuits based on theinformation in this document.
Freescale reserves the right to make changes without further notice to any productsherein. Freescale makes no warranty, representation, or guarantee regarding thesuitability of its products for any particular purpose, nor does Freescale assume anyliability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation consequential or incidentaldamages. “Typical” parameters that may be provided in Freescale data sheets and/orspecifications can and do vary in different applications, and actual performance mayvary over time. All operating parameters, including “typicals,” must be validated foreach customer application by customer’s technical experts. Freescale does not conveyany license under its patent rights nor the rights of others. Freescale sells productspursuant to standard terms and conditions of sale, which can be found at the followingaddress: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. Allother product or service names are the property of their respective owners.E 2015 Freescale Semiconductor, Inc.