RF LDMOS Wideband Integrated Power Amplifiers The A2I08H040N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 900 MHz Typical Doherty Single--Carrier W--CDMA Performance: V DD = 28 Vdc, I DQ1A = 25 mA, I DQ2A = 105 mA, V GS1B = 2.65 Vdc, V GS2B = 2.3 Vdc, P out = 9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency G ps (dB) PAE (%) Output PAR (dB) ACPR (dBc) 920 MHz 30.7 45.9 8.5 –36.0 940 MHz 30.6 46.7 8.4 –39.3 960 MHz 30.4 45.2 8.1 –34.5 700 MHz Typical Doherty Single--Carrier W--CDMA Performance: V DD = 28 Vdc, I DQ1A = 25 mA, I DQ2A = 105 mA, V GS1B = 2.65 Vdc, V GS2B = 2.3 Vdc, P out = 9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency G ps (dB) PAE (%) Output PAR (dB) ACPR (dBc) 728 MHz 29.1 49.1 7.9 –32.7 748 MHz 28.8 48.6 7.8 –36.4 768 MHz 28.5 46.9 7.8 –36.7 Features Advanced High Performance In--Package Doherty On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Designed for Digital Predistortion Error Correction Systems 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family , and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987. Document Number: A2I08H040N Rev. 0, 1/2016 Freescale Semiconductor Technical Data 728–960 MHz, 9 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS A2I08H040NR1 A2I08H040GNR1 TO--270WB--15 PLASTIC A2I08H040NR1 TO--270WBG--15 PLASTIC A2I08H040GNR1 Freescale Semiconductor, Inc., 2016. All rights reserved.
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A2I08H040NR1 A2I08H040GNR1
1RF Device DataFreescale Semiconductor, Inc.
RF LDMOS Wideband IntegratedPower AmplifiersThe A2I08H040N wideband integrated circuit is an asymmetrical Doherty
designed with on--chip matching that makes it usable from 728 to 960 MHz.This multi--stage structure is rated for 26 to 32 V operation and covers alltypical cellular base station modulation formats.
900 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,IDQ1A = 25 mA, IDQ2A = 105 mA, VGS1B = 2.65 Vdc, VGS2B = 2.3 Vdc,Pout = 9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
FrequencyGps(dB)
PAE(%)
Output PAR(dB)
ACPR(dBc)
920 MHz 30.7 45.9 8.5 –36.0
940 MHz 30.6 46.7 8.4 –39.3
960 MHz 30.4 45.2 8.1 –34.5
700 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,IDQ1A = 25 mA, IDQ2A = 105 mA, VGS1B = 2.65 Vdc, VGS2B = 2.3 Vdc,Pout = 9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
FrequencyGps(dB)
PAE(%)
Output PAR(dB)
ACPR(dBc)
728 MHz 29.1 49.1 7.9 –32.7
748 MHz 28.8 48.6 7.8 –36.4
768 MHz 28.5 46.9 7.8 –36.7
Features
Advanced High Performance In--Package Doherty On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Designed for Digital Predistortion Error Correction Systems
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent CurrentControl for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
Document Number: A2I08H040NRev. 0, 1/2016
Freescale SemiconductorTechnical Data
728–960 MHz, 9 W AVG., 28 VAIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
A2I08H040NR1A2I08H040GNR1
TO--270WB--15PLASTIC
A2I08H040NR1
TO--270WBG--15PLASTIC
A2I08H040GNR1
Freescale Semiconductor, Inc., 2016. All rights reserved.
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent CurrentControl for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2. Continuous use at maximum temperature will affect MTTF.3. MTTF calculator available at http://www.nxp.com/RF/calculators.4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
1. Part internally input matched.2. Measurements made with device in an asymmetrical Doherty configuration.3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.5. Refer to AN1977,Quiescent Current Thermal TrackingCircuit in theRF IntegratedCircuit Family, and to AN1987,Quiescent CurrentControl
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
6RF Device Data
Freescale Semiconductor, Inc.
A2I08H040NR1 A2I08H040GNR1
Figure 3. A2I08H040NR1 Test Circuit Component Layout
Rev. 2A2I08H040N D60265
R5
C6*
C7*
C8*C9*
C4*
C5*
R1 R2
R3 R4
C1
C2*
C3
C10*
C11* C12
C13*
C14
C15*
C16
C17
C18*
C19
C20*
C21*
C22
C23
C24
C25*C26*
CUTOUTAREA
Z1
Z2
VGG2A
VDD1AVDD2A
VDD1B
VGG1A
VGG1B VGG2B VDD2B
*C2, C4, C5, C6, C7, C8, C9, C10, C11, C13, C15, C18, C20, C21, C25, and C26 are mounted vertically.
C
P
Table 7. A2I08H040NR1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C14, C17, C23 10 F Chip Capacitors C5750X7S2A106M230KB TDK
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load PullTuner and TestCircuit
DeviceUnderTest
Zsource Zin Zload
Output Load PullTuner and TestCircuit
10RF Device Data
Freescale Semiconductor, Inc.
A2I08H040NR1 A2I08H040GNR1
Table 10. Peaking Side Load Pull Performance — Maximum Power TuningVDD = 28 Vdc, IDQ1B = 30 mA, VGS2B = 2.3 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load PullTuner and TestCircuit
DeviceUnderTest
Zsource Zin Zload
Output Load PullTuner and TestCircuit
18RF Device Data
Freescale Semiconductor, Inc.
A2I08H040NR1 A2I08H040GNR1
Table 15. Peaking Side Load Pull Performance — Maximum Power TuningVDD = 28 Vdc, IDQ1B = 30 mA, VGS2B = 2.3 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.Zsource = Measured impedance presented to the input of the device at the package reference plane.Zin = Impedance as measured from gate contact to ground.Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 41. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–2
12
8
IMAGINARY()
4 5 62 9
10
4
2
3
Figure 42. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 43. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 44. P3dB Load Pull AM/PM Contours ()
REAL ()
7
6
0
8
–18
–16
–10
–12
–20–14
27
24.525
P
E
4242.543
44
45
43.5
44.5
54 5658
6062
64
6668
P
E
P
E
P
E
45.546
44 44.5
64
25.5 26
26.527
27.5
28
–8
–6
–4
A2I08H040NR1 A2I08H040GNR1
23RF Device DataFreescale Semiconductor, Inc.
PACKAGE DIMENSIONS
24RF Device Data
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A2I08H040NR1 A2I08H040GNR1
A2I08H040NR1 A2I08H040GNR1
25RF Device DataFreescale Semiconductor, Inc.
26RF Device Data
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A2I08H040NR1 A2I08H040GNR1
A2I08H040NR1 A2I08H040GNR1
27RF Device DataFreescale Semiconductor, Inc.
28RF Device Data
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A2I08H040NR1 A2I08H040GNR1
A2I08H040NR1 A2I08H040GNR1
29RF Device DataFreescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools Printed Circuit Boards
To Download Resources Specific to a Given Part Number:1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Jan. 2016 Initial release of data sheet
30RF Device Data
Freescale Semiconductor, Inc.
A2I08H040NR1 A2I08H040GNR1
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