-
PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard level
MOSFETRev. 02 — 2 April 2010 Product data sheet
1. Product profile
1.1 General descriptionStandard level N-channel MOSFET in LFPAK
package qualified to 175 °C. This product is designed and qualified
for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate chargeHigh
efficiency gains in switching power converters
Improved mechanical and thermal characteristicsLFPAK provides
maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC convertersLithium-ion battery protectionLoad
switching
Motor controlServer power supplies
1.4 Quick reference data
Table 1. Quick referenceSymbol Parameter Conditions Min Typ Max
UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1
- - 28.1 A
Ptot total power dissipation
Tmb = 25 °C; see Figure 2 - - 74 W
Tj junction temperature -55 - 175 °C
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 28.1 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
- - 42 mJ
Dynamic characteristicsQGD gate-drain charge VGS = 10 V; ID = 15
A;
VDS = 50 V;see Figure 14 and 15
- 8 - nC
QG(tot) total gate charge - 23 - nC
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
2. Pinning information
3. Ordering information
Static characteristicsRDSon drain-source
on-state resistanceVGS = 10 V; ID = 15 A; Tj = 100 °C; see
Figure 12
- - 71 mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
- 30.8 39.5 mΩ
Table 1. Quick reference …continuedSymbol Parameter Conditions
Min Typ Max Unit
Table 2. Pinning informationPin Symbol Description Simplified
outline Graphic symbol1 S source
SOT669 (LFPAK)
2 S source
3 S source
4 G gate
mb D mounting base; connected to drain
mb
1 2 3 4
S
D
G
mbb076
Table 3. Ordering informationType number Package
Name Description VersionPSMN039-100YS LFPAK plastic single-ended
surface-mounted package (LFPAK); 4 leads SOT669
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 2 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
4. Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum
Rating System (IEC 60134).Symbol Parameter Conditions Min Max
UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ -
100 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 20
A
VGS = 10 V; Tmb = 25 °C; see Figure 1 - 28.1 A
IDM peak drain current tp ≤ 10 µs; pulsed; Tmb = 25 °C; see
Figure 3 - 112 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 74
W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Tsld(M) peak soldering temperature
- 260 °C
Source-drain diodeIS source current Tmb = 25 °C - 28.1 A
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 112
A
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 28.1 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
- 42 mJ
Fig 1. Continuous drain current as a function of mounting base
temperature
Fig 2. Normalized total power dissipation as a function of
mounting base temperature
003aae091
0
5
10
15
20
25
30
0 50 100 150 200Tmb (°C)
ID (A)
Tmb (°C)0 20015050 100
03aa16
40
80
120
Pder(%)
0
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information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 3 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
Fig 3. Safe operating area; continuous and peak drain currents
as a function of drain-source voltage
003aae092
10-2
10-1
1
10
102
103
1 10 102 103V DS (V)
ID(A)
Limit RDSon = VDS / ID
DC
100 ms10 ms1 ms
100 μ s
tp =10 μs
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information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 4 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
5. Thermal characteristics
Table 5. Thermal characteristicsSymbol Parameter Conditions Min
Typ Max UnitRth(j-mb) thermal resistance from
junction to mounting base
see Figure 4 - 1 2.03 K/W
Fig 4. Transient thermal impedance from junction to mounting
base as a function of pulse duration; typical values
003aae093
single shot
0.2
0.1
0.05
0.02
10-3
10-2
10-1
1
10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)
Zth (K/W)δ = 0.5
tpT
P
t
tpT
δ =
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 5 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
6. Characteristics
Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max
UnitStatic characteristicsV(BR)DSS drain-source
breakdown voltageID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - -
V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;see Figure 10
1 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;see Figure 11 and 10
2 3 4 V
ID = 1 mA; VDS = VGS; Tj = -55 °C;see Figure 10
- - 4.7 V
IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 125 °C -
- 50 µA
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.01 2 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2
100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
RDSon drain-source on-state resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C;see Figure 12
- - 71 mΩ
VGS = 10 V; ID = 15 A; Tj = 175 °C;see Figure 12
- 72.9 100 mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C;see Figure 13
- 30.8 39.5 mΩ
RG internal gate resistance (AC)
f = 1 MHz - 0.62 1.5 Ω
Dynamic characteristicsQG(tot) total gate charge ID = 15 A; VDS
= 50 V; VGS = 10 V;
see Figure 14 and 15- 23 - nC
ID = 0 A; VDS = 0 V; VGS = 10 V - 19 - nC
QGS gate-source charge ID = 15 A; VDS = 50 V; VGS = 10 V;see
Figure 14
- 5 - nC
QGS(th) pre-threshold gate-source charge
- 3 - nC
QGS(th-pl) post-threshold gate-source charge
- 2 - nC
QGD gate-drain charge ID = 15 A; VDS = 50 V; VGS = 10 V;see
Figure 14 and 15
- 8 - nC
VGS(pl) gate-source plateau voltage
VDS = 50 V; see Figure 14 and 15 - 4.5 - V
Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25
°C; see Figure 16
- 1847 - pF
Coss output capacitance - 86 - pF
Crss reverse transfer capacitance
- 64 - pF
td(on) turn-on delay time VDS = 50 V; RL = 3.3 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
- 11 - ns
tr rise time - 8 - ns
td(off) turn-off delay time - 22 - ns
tf fall time - 7 - ns
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 6 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
Source-drain diodeVSD source-drain voltage IS = 15 A; VGS = 0 V;
Tj = 25 °C;
see Figure 17- 0.8 1.2 V
trr reverse recovery time IS = 5 A; dIS/dt = 100 A/µs; VGS = 0
V; VDS = 50 V
- 44 - ns
Qr recovered charge - 78 - nC
Table 6. Characteristics …continuedSymbol Parameter Conditions
Min Typ Max Unit
Fig 5. Forward transconductance as a function of drain current;
typical values
Fig 6. Transfer characteristics: drain current as a function of
gate-source voltage; typical values
Fig 7. Input, output and reverse transfer capacitances as a
function of drain-source voltage; typical values
Fig 8. Output characteristics: drain current as a function of
drain-source voltage; typical values
003aae096
0
10
20
30
40
50
0 5 10 15 20 25ID (A)
gfs(S)
003aae095
0
5
10
15
20
0 1 2 3 4 5 6VGS (V)
ID(A)
Tj = 25 °CTj = 175 °C
003aae097
0
500
1000
1500
2000
0 4 8 12 16 20VGS (V)
C (pF)
Ciss
Crss
003aae094
0
10
20
30
0 0.5 1 1.5 2VDS (V)
ID(A)
55.56.510
VGS (V) = 4.55
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 7 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
Fig 9. Drain-source on-state resistance as a function of
gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of junction
temperature
Fig 11. Sub-threshold drain current as a function of gate-source
voltage
Fig 12. Normalized drain-source on-state resistance factor as a
function of junction temperature
003aae100
20
40
60
80
100
4 8 12 16 20VGS (V)
RDSon(mΩ)
Tj (°C)−60 1801200 60
003aad280
2
3
1
4
5
VGS(th)(V)
0
max
typ
min
03aa35
VGS (V)0 642
10−4
10−5
10−2
10−3
10−1
ID(A)
10−6
min typ max
003aad774
0
0.8
1.6
2.4
3.2
-60 0 60 120 180Tj (°C)
a
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 8 of 15
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Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
Fig 13. Drain-source on-state resistance as a function of drain
current; typical values
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate charge;
typical values
Fig 16. Drain-source on-state resistance as a function of drain
current; typical values
003aae099
0
30
60
90
120
150
180
0 5 10 15 20 25 30ID (A)
RDSon(mΩ)
5.5
VGS (V) = 4.6
10
5
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
003aae101
0
2
4
6
8
10
0 10 20 30QG (nC)
VGS(V)
VDS = 50V
80V
20V
003aae098
10
102
103
104
10-1 1 10 102VDS (V)
C (pF)
Ciss
CossCrss
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information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 9 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
Fig 17. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical values
003aae102
0
5
10
15
20
25
0 0.25 0.5 0.75 1VSD (V)
IS(A)
Tj = 25 °CTj = 175 °C
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 10 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
7. Package outline
Fig 18. Package outline SOT669 (LFPAK)
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE IEC JEDEC JEITA
SOT669 MO-235 04-10-1306-03-16
0 2.5 5 mm
scale
e
E1
b
c2
A2
A2 b cA eUNIT
DIMENSIONS (mm are the original dimensions)
mm 1.100.95
A3A1
0.150.00
1.201.01
0.500.35
b2
4.413.62
b3
2.22.0
b4
0.90.7
0.250.19
c2
0.300.24
4.103.80
6.25.8
H
1.30.8
L2
0.850.40
L
1.30.8
L1
8°0°
w yD(1)
5.04.8
E(1)
3.33.1
E1(1)D1
(1)
max
0.25 4.20 1.27 0.25 0.1
1 2 3 4
mountingbase
D1
c
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
E
b2
b3
b4
H D
L2
L1
A
Aw M
C
C
X
1/2 e
y C
θ
θ
(A )3
L
A
A1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are
not included.
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 11 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
8. Revision history
Table 7. Revision historyDocument ID Release date Data sheet
status Change notice SupersedesPSMN039-100YS_2 20100402 Product
data sheet - PSMN039-100YS_1
Modifications: • Status changed from Objective to
Product.PSMN039-100YS_1 20100114 Objective data sheet - -
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information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 12 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before
initiating or completing a design.
[2] The term 'short data sheet' is explained in section
"Definitions".
[3] The product status of device(s) described in this document
may have changed since this document was published and may differ
in case of multiple devices. The latest product status information
is available on the Internet at URL http://www.nexperia.com.
9.2 DefinitionsDraft — The document is a draft version only. The
content is still under internal review and subject to formal
approval, which may result in modifications or additions. Nexperia
does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no
liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full
data sheet with the same product type number(s) and title. A short
data sheet is intended for quick reference only and should not be
relied upon to contain detailed and full information. For detailed
and full information see the relevant full data sheet, which is
available on request via the local Nexperia sales office. In case
of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a
Product data sheet shall define the specification of the product as
agreed between Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event
however, shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described
in the Product data sheet.
9.3 DisclaimersLimited warranty and liability — Information in
this document is believed to be accurate and reliable. However,
Nexperia does not give any representations or warranties, expressed
or implied, as to the accuracy or completeness of such information
and shall have no liability for the consequences of use of such
information.
In no event shall Nexperia be liable for any indirect,
incidental, punitive, special or consequential damages (including -
without limitation - lost profits, lost savings, business
interruption, costs related to the removal or replacement of any
products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur for any
reason whatsoever, Nexperia’s aggregate and cumulative liability
towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of
Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including
without limitation specifications and product descriptions, at any
time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical,
military, aircraft, space or life support equipment, nor in
applications where failure or malfunction of a Nexperia product can
reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use
is at the customer’s own risk.
Applications — Applications that are described herein for any of
these products are for illustrative purposes only. Nexperia makes
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in
the customer application/use or the application/use of customer’s
third party customer(s) (hereinafter both referred to as
“Application”). It is customer’s sole responsibility to check
whether the Nexperia product is suitable and fit for the
Application planned. Customer has to do all necessary testing for
the Application in order to avoid a default of the Application and
the product. Nexperia does not accept any liability in this
respect.
Quick reference data — The Quick reference data is an extract of
the product data given in the Limiting values and Characteristics
sections of this document, and as such is not complete, exhaustive
or legally binding.
Limiting values — Stress above one or more limiting values (as
defined in the Absolute Maximum Ratings System of IEC 60134) will
cause permanent damage to the device. Limiting values are stress
ratings only and (proper) operation of the device at these or any
other conditions above those given in the Recommended operating
conditions section (if present) or the Characteristics sections of
this document is not warranted. Constant or repeated exposure to
limiting values will permanently and irreversibly affect the
quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless
otherwise agreed in a valid written individual agreement. In case
an individual agreement is concluded only the terms and conditions
of the respective agreement shall apply. Nexperia hereby expressly
objects to applying the customer’s general terms and conditions
with regard to the purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be
interpreted or construed as an offer to sell products that is open
for acceptance or the grant, conveyance or implication of any
license under any copyrights, patents or other industrial or
intellectual property rights.
Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains
data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document
contains data from the preliminary specification.
Product [short] data sheet Production This document contains the
product specification.
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 13 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
Export control — This document as well as the item(s) described
herein may be subject to export control regulations. Export might
require a prior authorization from national authorities.
Non-automotive qualified products — Unless this data sheet
expressly states that this specific Nexperia product is automotive
qualified, the product is not suitable for automotive use. It is
neither qualified nor tested in accordance with automotive testing
or application requirements. Nexperia accepts no liability for
inclusion and/or use of non-automotive qualified products in
automotive equipment or applications.
In the event that customer uses the product for design-in and
use in automotive applications to automotive specifications and
standards, customer (a) shall use the product without Nexperia’s
warranty of the product for such automotive applications, use and
specifications, and (b)
whenever customer uses the product for automotive applications
beyond Nexperia’s specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies Nexperia
for any liability, damages or failed product claims resulting from
customer design and use of the product for automotive applications
beyond Nexperia’s standard warranty and Nexperia’s product
specifications .
9.4 TrademarksNotice: All referenced brands, product names,
service names and trademarks are the property of their respective
owners.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to:
[email protected]
© Nexperia B.V. 2017. All rights reservedPSMN039-100YS_2 All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 02 — 2 April 2010 14 of 15
-
Nexperia PSMN039-100YSN-channel LFPAK 100 V 39.5 mΩ standard
level MOSFET
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . .
. . . .11.1 General description . . . . . . . . . . . . . . . . . .
. . . .11.2 Features and benefits . . . . . . . . . . . . . . . . .
. . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . .
. . . . . . .11.4 Quick reference data . . . . . . . . . . . . . .
. . . . . . .12 Pinning information. . . . . . . . . . . . . . . .
. . . . . . .23 Ordering information. . . . . . . . . . . . . . . .
. . . . . .24 Limiting values. . . . . . . . . . . . . . . . . . .
. . . . . . . .35 Thermal characteristics . . . . . . . . . . . . .
. . . . . .56 Characteristics. . . . . . . . . . . . . . . . . . .
. . . . . . . .67 Package outline . . . . . . . . . . . . . . . . .
. . . . . . . . 118 Revision history. . . . . . . . . . . . . . . .
. . . . . . . . .129 Legal information. . . . . . . . . . . . . . .
. . . . . . . . .139.1 Data sheet status . . . . . . . . . . . . .
. . . . . . . . . .139.2 Definitions. . . . . . . . . . . . . . . .
. . . . . . . . . . . . .139.3 Disclaimers . . . . . . . . . . . .
. . . . . . . . . . . . . . . .139.4 Trademarks. . . . . . . . . .
. . . . . . . . . . . . . . . . . .1410 Contact information. . . .
. . . . . . . . . . . . . . . . . .14
© Nexperia B.V. 2017. All rights reservedFor more information,
please visit: http://www.nexperia.comFor sales office addresses,
please send an email to: [email protected] Date of
release: 02 April 2010
1. Product profile1.1 General description1.2 Features and
benefits1.3 Applications1.4 Quick reference data
2. Pinning information3. Ordering information4. Limiting
values5. Thermal characteristics6. Characteristics7. Package
outline8. Revision history9. Legal information9.1 Data sheet
status9.2 Definitions9.3 Disclaimers9.4 Trademarks
10. Contact information11. Contents
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