-
1. Product profile
1.1 General descriptionLogic level enhancement mode N-channel
MOSFET in LFPAK package. This product is designed and qualified for
use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°CLow
parasitic inductance and resistance
Optimised for 4.5V Gate drive utilising NextPower Superjunction
technologyUltra low QG, QGD and QOSS for high system efficiencies
at low and high loads
1.3 Applications
DC-to-DC convertersLithium-ion battery protectionLoad
switching
Power OR-ingServer power suppliesSync rectifier
1.4 Quick reference data
PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK
using NextPower technologyRev. 1 — 2 May 2011 Product data
sheet
Table 1. Quick reference dataSymbol Parameter Conditions Min Typ
Max UnitVDS drain-source
voltage25 °C ≤ Tj ≤ 175 °C - - 25 V
ID drain current Tmb = 25 °C; VGS = 10 V;see Figure 1
[1] - - 100 A
Ptot total power dissipation
Tmb = 25 °C; see Figure 2 - - 106 W
Tj junction temperature
-55 - 175 °C
Static characteristicsRDSon drain-source
on-state resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12
- 2.6 3.15 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12
- 2 2.4 mΩ
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
[1] Continuous current is limited by package
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code.
Dynamic characteristicsQGD gate-drain charge VGS = 4.5 V; ID =
25 A;
VDS = 12 V; see Figure 14; see Figure 15
- 5.2 - nC
QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12 V;
see Figure 15; see Figure 14
- 18 - nC
Table 1. Quick reference data …continuedSymbol Parameter
Conditions Min Typ Max Unit
Table 2. Pinning informationPin Symbol Description Simplified
outline Graphic symbol1 S source
SOT669 (LFPAK; Power-SO8)
2 S source
3 S source
4 G gate
mb D mounting base;connected to drain
mb
1 2 3 4
S
D
G
mbb076
Table 3. Ordering informationType number Package
Name Description VersionPSMN2R2-25YLC LFPAK; Power-SO8 plastic
single-ended surface-mounted package; 4 leads SOT669
Table 4. Marking codesType number Marking code[1]
PSMN2R2-25YLC 2C225L
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 2 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
5. Limiting values
[1] Continuous current is limited by package.
Table 5. Limiting valuesIn accordance with the Absolute Maximum
Rating System (IEC 60134).Symbol Parameter Conditions Min Max
UnitVDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 25 V
VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 25
V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] - 100
A
VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] - 100 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C;see
Figure 4
- 636 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 106
W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 430
- V
Source-drain diodeIS source current Tmb = 25 °C - 96 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 636
A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energyVGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤
25 V; unclamped; RGS = 50 Ω; see Figure 3
- 60 mJ
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 3 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
Fig 1. Continuous drain current as a function of mounting base
temperature
Fig 2. Normalized total power dissipation as a function of
mounting base temperature
Fig 3. Single pulse avalanche rating; avalanche current as a
function of avalanche time
003aaf707
0
30
60
90
120
150
180
0 50 100 150 200Tmb (°C)
ID (A)
(1)
Tmb (°C)0 20015050 100
03na19
40
80
120
Pder(%)
0
003aaf 721
10-1
1
10
102
103
10-3 10-2 10-1 1 10tAL (ms )
IAL(A)
(1)
(2)
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 4 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
6. Thermal characteristics
Fig 4. Safe operating area; continuous and peak drain currents
as a function of drain-source voltage
003aaf708
10-1
1
10
102
103
104
10-1 1 10 102VDS (V)
ID(A)
Limit RDSon = VDS / ID
DC
100 μs
10 ms
tp =10 μs
100 ms
1 ms
Table 6. Thermal characteristicsSymbol Parameter Conditions Min
Typ Max UnitRth(j-mb) thermal resistance from
junction to mounting basesee Figure 5 - 1.25 1.42 K/W
Fig 5. Transient thermal impedance from junction to mounting
base as a function of pulse duration
003aaf709
single shot
0.2
0.1
0.05
0.02
10-2
10-1
1
10
1e-6 10-5 10-4 10-3 10-2 10-1 1tp (s)
Zth(j-mb) (K/W)
δ = 0.5
tpT
P
t
tpT
δ =
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 5 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
7. Characteristics
Table 7. CharacteristicsSymbol Parameter Conditions Min Typ Max
UnitStatic characteristicsV(BR)DSS drain-source
breakdown voltageID = 250 µA; VGS = 0 V; Tj = 25 °C 25 - - V
ID = 250 µA; VGS = 0 V; Tj = -55 °C 22.5 - - V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;see Figure 10; see Figure
11
1.05 1.54 1.95 V
ID = 10 mA; VDS = VGS; Tj = 150 °C 0.5 - - V
ID = 1 mA; VDS = VGS; Tj = -55 °C - - 2.25 V
IDSS drain leakage current VDS = 25 V; VGS = 0 V; Tj = 25 °C - -
1 µA
VDS = 25 V; VGS = 0 V; Tj = 150 °C - - 100 µA
IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - -
100 nA
VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA
RDSon drain-source on-state resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;see Figure 12
- 2.6 3.15 mΩ
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;see Figure 13; see Figure
12
- - 5.05 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;see Figure 12
- 2 2.4 mΩ
VGS = 10 V; ID = 25 A; Tj = 150 °C;see Figure 13; see Figure
12
- - 3.85 mΩ
RG gate resistance f = 1 MHz - 0.9 1.8 Ω
Dynamic characteristicsQG(tot) total gate charge ID = 25 A; VDS
= 12 V; VGS = 10 V;
see Figure 14; see Figure 15- 39 - nC
ID = 25 A; VDS = 12 V; VGS = 4.5 V;see Figure 15; see Figure
14
- 18 - nC
ID = 0 A; VDS = 0 V; VGS = 10 V - 38 - nC
QGS gate-source charge ID = 25 A; VDS = 12 V; VGS = 4.5 V;see
Figure 14; see Figure 15
- 6.3 - nC
QGS(th) pre-threshold gate-source charge
- 4.1 - nC
QGS(th-pl) post-threshold gate-source charge
- 2.2 - nC
QGD gate-drain charge - 5.2 - nC
VGS(pl) gate-source plateau voltage
ID = 25 A; VDS = 12 V; see Figure 14;see Figure 15
- 2.7 - V
Ciss input capacitance VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25
°C; see Figure 16
- 2542 - pF
Coss output capacitance - 617 - pF
Crss reverse transfer capacitance
- 216 - pF
td(on) turn-on delay time VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω
- 24 - ns
tr rise time - 34 - ns
td(off) turn-off delay time - 36 - ns
tf fall time - 16 - ns
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 6 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
Qoss output charge VGS = 0 V; VDS = 12 V; f = 1 MHz; Tj = 25
°C
- 16.7 - nC
Source-drain diodeVSD source-drain voltage IS = 25 A; VGS = 0 V;
Tj = 25 °C;
see Figure 17- 0.8 1.1 V
trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0
V; VDS = 12 V
- 35 - ns
Qr recovered charge - 31 - nC
ta reverse recovery rise time
VGS = 0 V; IS = 25 A; dIS/dt = -100 A/µs; VDS = 12 V; see Figure
18
- 21 - ns
tb reverse recovery fall time
- 14 - ns
Table 7. Characteristics …continuedSymbol Parameter Conditions
Min Typ Max Unit
Fig 6. Output characteristics; drain current as a function of
drain-source voltage
Fig 7. Drain-source on-state resistance as a function of
gate-source voltage; typical values
003aaf 710
0
20
40
60
80
100
0 0.5 1 1.5 2VDS (V)
ID(A)
2.4
VGS (V) =
2.6
2.8
3.0
3.5
4.5
10
003aaf 711
0
2
4
6
8
10
12
0 4 8 12 16VGS (V)
RDSon(mΩ)
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 7 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
Fig 8. Forward transconductance as a function of drain current;
typical values
Fig 9. Transfer characteristics; drain current as a function of
gate-source voltage; typical values
Fig 10. Sub-threshold drain current as a function of gate-source
voltage
Fig 11. Gate-source threshold voltage as a function of junction
temperature
003aaf 716
0
40
80
120
160
0 25 50 75 100ID (A)
gfs(S )
003aaf 718
0
20
40
60
80
100
0 1 2 3 4VGS (V)
ID(A)
Tj = 25 °CTj = 150 °C
003aaf 715
10-6
10-5
10-4
10-3
10-2
10-1
0 1 2 3VGS (V)
ID (A)
Min Typ Max
003aaf 714
0
1
2
3
-60 0 60 120 180Tj (°C)
VGS(th)(V)
Min (5mA)
Max (1mA)ID=5mA
1mA
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 8 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
Fig 12. Drain-source on-state resistance as a function of drain
current; typical values
Fig 13. Normalized drain-source on-state resistance factor as a
function of junction temperature
Fig 14. Gate charge waveform definitions Fig 15. Gate-source
voltage as a function of gate charge; typical values
003aaf 712
0
2
4
6
8
0 20 40 60 80 100ID (A)
RDSon(mΩ)
2.8
VGS (V) =
10
4.5
3.5
3.0
003aaf 713
0
0.5
1
1.5
2
-60 0 60 120 180Tj (°C)
aVGS =10V
4.5V
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
003aaf 719
0
2
4
6
8
10
0 20 40 60QG (nC)
VGS(V)
VDS = 5V
20V
12V
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 9 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
Fig 16. Input, output and reverse transfer capacitances as a
function of drain-source voltage; typical values
Fig 17. Source current as a function of source-drain voltage;
typical values
Fig 18. Reverse recovery timing definition
003aaf 717
102
103
104
10-1 1 10 102VDS (V)
C (pF)
Cis s
Crs s
Cos s
003aaf 720
0
20
40
60
80
100
0 0.3 0.6 0.9 1.2VSD (V)
IS(A)
Tj = 25 °CTj = 150 °C
003aaf 444
0
t (s )
ID (A)
IRM
0.25 IRM
trr
ta tb
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 10 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
8. Package outline
Fig 19. Package outline SOT669 (LFPAK; Power-SO8)
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE IEC JEDEC JEITA
SOT669 MO-235 06-03-1611-03-25
0 2.5 5 mm
scale
e
E1
b
c2
A2
A2 b cA eUNIT
DIMENSIONS (mm are the original dimensions)
mm 1.100.95
A3A1
0.150.00
1.201.01
0.500.35
b2
4.413.62
b3
2.22.0
b4
0.90.7
0.250.19
c2
0.300.24
4.103.80
6.25.8
H
1.30.8
L2
0.850.40
L
1.30.8
L1
8°0°
w yD(1)
5.04.8
E(1)
3.33.1
E1(1)D1
(1)
max
0.25 4.20 1.27 0.25 0.1
1 2 3 4
mountingbase
D1
c
Plastic single-ended surface-mounted package (LFPAK; Power-SO8);
4 leads SOT669
E
b2
b3
b4
H D
L2
L1
A
Aw M
C
C
X
1/2 e
y C
θ
θ
(A )3
L
A
A1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are
not included.
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 11 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
9. Revision history
Table 8. Revision historyDocument ID Release date Data sheet
status Change notice SupersedesPSMN2R2-25YLC v.1 20110502 Product
data sheet - -
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 12 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before
initiating or completing a design.
[2] The term 'short data sheet' is explained in section
"Definitions".
[3] The product status of device(s) described in this document
may have changed since this document was published and may differ
in case of multiple devices. The latest product status information
is available on the Internet at URL http://www.nexperia.com.
10.2 DefinitionsPreview — The document is a preview version
only. The document is still subject to formal approval, which may
result in modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the
consequences of use of such information.
Draft — The document is a draft version only. The content is
still under internal review and subject to formal approval, which
may result in modifications or additions. Nexperia does not give
any representations or warranties as to the accuracy or
completeness of information included herein and shall have no
liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full
data sheet with the same product type number(s) and title. A short
data sheet is intended for quick reference only and should not be
relied upon to contain detailed and full information. For detailed
and full information see the relevant full data sheet, which is
available on request via the local Nexperia sales office. In case
of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a
Product data sheet shall define the specification of the product as
agreed between Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event
however, shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described
in the Product data sheet.
10.3 DisclaimersLimited warranty and liability — Information in
this document is believed to be accurate and reliable. However,
Nexperia does not give any representations or warranties, expressed
or implied, as to the accuracy or completeness of such information
and shall have no liability for the consequences of use of such
information.
In no event shall Nexperia be liable for any indirect,
incidental, punitive, special or consequential damages (including -
without limitation - lost profits, lost savings, business
interruption, costs related to the removal or replacement of any
products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur for any
reason whatsoever, Nexperia’s aggregate and cumulative liability
towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of
Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including
without limitation specifications and product descriptions, at any
time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support,
life-critical or safety-critical systems or equipment, nor in
applications where failure or malfunction of a Nexperia product can
reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use
is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of
the product data given in the Limiting values and Characteristics
sections of this document, and as such is not complete, exhaustive
or legally binding.
Applications — Applications that are described herein for any of
these products are for illustrative purposes only. Nexperia makes
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to
determine whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating
safeguards to minimize the risks associated with their applications
and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or
use by customer’s third party customer(s). Customer is responsible
for doing all necessary testing for the customer’s applications and
products using Nexperia products in order to avoid a default of the
applications and the products or of the application or use by
customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as
defined in the Absolute Maximum Ratings System of IEC 60134) will
cause permanent damage to the device. Limiting values are stress
ratings only and (proper) operation of the device at these or any
other conditions above those given in the Recommended operating
conditions section (if present) or the Characteristics sections of
this document is not warranted. Constant or repeated exposure to
limiting values will permanently and irreversibly affect the
quality and reliability of the device.
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains
data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document
contains data from the preliminary specification.
Product [short] data sheet Production This document contains the
product specification.
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 13 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless
otherwise agreed in a valid written individual agreement. In case
an individual agreement is concluded only the terms and conditions
of the respective agreement shall apply. Nexperia hereby expressly
objects to applying the customer’s general terms and conditions
with regard to the purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be
interpreted or construed as an offer to sell products that is open
for acceptance or the grant, conveyance or implication of any
license under any copyrights, patents or other industrial or
intellectual property rights.
Export control — This document as well as the item(s) described
herein may be subject to export control regulations. Export might
require a prior authorization from national authorities.
Non-automotive qualified products — Unless this data sheet
expressly states that this specific Nexperia product is automotive
qualified, the product is not suitable for automotive use. It is
neither qualified nor tested in accordance with automotive testing
or application requirements. Nexperia accepts no liability for
inclusion and/or use of non-automotive qualified products in
automotive equipment or applications.
In the event that customer uses the product for design-in and
use in automotive applications to automotive specifications and
standards, customer (a) shall use the product without Nexperia’s
warranty of the product for such automotive applications, use and
specifications, and (b) whenever customer uses the product for
automotive applications beyond Nexperia’s specifications such use
shall be solely at customer’s own risk, and (c) customer fully
indemnifies Nexperia for any liability, damages or failed product
claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and
Nexperia’s product specifications .
10.4 TrademarksNotice: All referenced brands, product names,
service names and trademarks are the property of their respective
owners.
11. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to:
[email protected]
© Nexperia B.V. 2017. All rights reservedPSMN2R2-25YLC All
information provided in this document is subject to legal
disclaimers.
Product data sheet Rev. 1 — 2 May 2011 14 of 15
-
Nexperia PSMN2R2-25YLCN-channel 25 V 2.4 mΩ logic level MOSFET
in LFPAK using NextPower
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . .
. . . .11.1 General description . . . . . . . . . . . . . . . . . .
. . . .11.2 Features and benefits . . . . . . . . . . . . . . . . .
. . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . .
. . . . . . .11.4 Quick reference data . . . . . . . . . . . . . .
. . . . . . .12 Pinning information. . . . . . . . . . . . . . . .
. . . . . . .23 Ordering information. . . . . . . . . . . . . . . .
. . . . . .24 Marking . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . .25 Limiting values. . . . . . . . . . . . . . .
. . . . . . . . . . . .36 Thermal characteristics . . . . . . . . .
. . . . . . . . . .57 Characteristics. . . . . . . . . . . . . . .
. . . . . . . . . . . .68 Package outline . . . . . . . . . . . . .
. . . . . . . . . . . . 119 Revision history. . . . . . . . . . . .
. . . . . . . . . . . . .1210 Legal information. . . . . . . . . .
. . . . . . . . . . . . . .1310.1 Data sheet status . . . . . . . .
. . . . . . . . . . . . . . .1310.2 Definitions. . . . . . . . . .
. . . . . . . . . . . . . . . . . . .1310.3 Disclaimers . . . . . .
. . . . . . . . . . . . . . . . . . . . . .1310.4 Trademarks. . . .
. . . . . . . . . . . . . . . . . . . . . . . .1411 Contact
information. . . . . . . . . . . . . . . . . . . . . .14
© Nexperia B.V. 2017. All rights reservedFor more information,
please visit: http://www.nexperia.comFor sales office addresses,
please send an email to: [email protected] Date of
release: 02 May 2011
1. Product profile1.1 General description1.2 Features and
benefits1.3 Applications1.4 Quick reference data
2. Pinning information3. Ordering information4. Marking5.
Limiting values6. Thermal characteristics7. Characteristics8.
Package outline9. Revision history10. Legal information10.1 Data
sheet status10.2 Definitions10.3 Disclaimers10.4 Trademarks
11. Contact information12. Contents
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