Kalpakjian • Schmid Manufacturing Engineering and Technology © 2001 Prentice-Hall Page 34-1 CHAPTER 34 Fabrication of Microelectronic Devices* *By Kent M. Kalpakjian
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Kalpakjian • SchmidManufacturing Engineering and Technology © 2001 Prentice-Hall Page 34-1
CHAPTER 34
Fabrication of Microelectronic Devices*
*By Kent M. Kalpakjian
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Kalpakjian • SchmidManufacturing Engineering and Technology © 2001 Prentice-Hall Page 34-2
Printed Circuit Boards
Figure 34.1 A collection of printed circuit boards. Source:Phoenix Technologies, Inc.
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Kalpakjian • SchmidManufacturing Engineering and Technology © 2001 Prentice-Hall Page 34-3
FabricationSequence of
and Integrated
Circuit
Figure 34.2General fabricationsequence for integrated circuits.
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MOS Transistor Cross-Sections
Figure 34.3 Cross-sectional views of thefabrication of a MOStransistor. Source: R. C.Jaeger.
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Kalpakjian • SchmidManufacturing Engineering and Technology © 2001 Prentice-Hall Page 34-5
Chemical Vapor Deposition
Figure 34.4 Schematic diagrams of (a) continuous, atmospheric-pressure CVD reactor and (b) low-pressureCVD. Source: S. M. Sze.
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Silicon Dioxide Growth
Figure 34.5 Growth of
silicon dioxide, showingconsumption of silicon.Source: S. M. Sze.
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Pattern Transfer by Lithography
Figure 34.6 Pattern transfer by lithography. Note that the mask in step three can be a positive or negative imageof the pattern. Source: After W. C. Till and J. T. Luxon.
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Etching and Ion ImplantationFigure 34.7 Etching profiles resulting from (a) isotropic wet etching and (b) anisotropic dryetching. Source: R. C. Jaeger.
Figure 34.8 Apparatus for ionimplantation
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pn Junction Diode
Figure 34.9 (continued)
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pn Junction Diode (cont.)
Figure 34.9
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Two-Level Metal Interconnect
Figure 34.10 (a) Scanning electron microscope photograph of a two-level metal interconnect. Notethe varying surface topography. Source: NationalSemiconductor Corporation. (b) Schematic drawingof a two-level metal interconnect structure. Source: R.C. Jaeger.
(a) (b)
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Bonding and Packaging
(a) (b) (c)
Figure 34.11 (a) SEM photograph of wire bonds connecting package leads (left-hand side) to die bonding pads. (b) and (c) Detailed views of (a). Source: Courtesy of Micron Technology, Inc.
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Integrated Circuit Packages
Figure 34.12 Schematic illustrations of different IC packages: (a) dual-in-line (DIP), and (b) ceramic flat pack,and (c) common surface mount configuration. Sources: R. C. Jaeger and A. B. Glaser; G. E. Subak-Sharpe.