FRAUNHOFER INSTITUTE FOR PHOTONIC MICROSYSTEMS IPMS CENTER NANOELECTRONIC TECHNOLOGIES (CNT) PROCESS CATALOGUE & EQUIPMENT THIN FILMS / DEPOSITION ALD OXIDE, NITRIDES Al 2 O 3 , ZrO 2 , HfO 2 , TiO 2 , SrO, SrTiO x , Ta 2 O 5 , Nb 2 O 5 , NiO High-k, MIM, Laminates, Doped layers FEoL SiO 2 , SiN x Liner, Spacer FEoL ALD METAL TiN, TaN, NiN x Electrode, Gate, Barrier FEoL CVD TiN, Ni FEoL a-Si, poly Si, SiGe (epitaxial) Source/Drain FEoL Co, CoN x Barrier, Liner, Seed BEoL PVD Ta, TaN, Cu Barrier, Liner, Seed BEoL SPIN-ON SiO 2 , low-k, Resist Fill, Hardmasks, Dielectrics FEoL / BEoL NANOPATTERNING LITHOGRAPHY E-Beam (≤30 nm CD) Direct write FEoL / BEoL Resist coating and development, Top/Bottom Coating, Special resists Resist FEoL / BEoL PLASMA ETCH SiO 2 , SiN, BARC, SiON, a-C:H Hardmasks FEoL SiO 2 , SiN, SiCN, low-k, ULK Dielectrics BEoL Si, a-Si, poly-Si Deep Trench, TSV FEoL HfO 2 , ZrO 2 , HfZrO x , TiO 2 , Al 2 O 3 High-k, Gate etch FEoL W, TiN, TaN, TaCN, poly-Si, Al Electrodes FEoL / BEoL www.ipms.fraunhofer.de The competencies of the CNT division are focused on Nanopatterning, High-k Devices and Interconnects. More than 40 process and analytical tools for 200 and 300 mm wafers are available. Due to a 800 m 2 clean room compliant with industry standards, developments and new processes can be quickly integrated into the production lines of our partners. Development of Equipment, Processes and Chemicals | Device Integration and Demonstrators | Wafer and Analytical Services
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process catalogue blattversion2014 - Fraunhofer IPMS · PDF filePROCESS CATALOGUE & EQUIPMENT ... Electrode, Gate, Barrier FEoL CVD TiN, Ni FEoL a-Si, ... Atom Probe Tomography (APT)
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F R A U N H O F E R I N S T I T U T E F O R P H O T O N I C M I C R O S Y S T E M S I P M S
C E N T E R N A N O E L E C T R O N I C T E C H N O L O G I E S ( C N T )