Dual IGBT Module Spec.No.IGBT-SP-10006-R4 P1 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. * High thermal fatigue durability (delta Tc=70°C, N>30,000cycles) ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Item Symbol Unit Specification Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage VGES V ±20 Collector Current DC IC A 600 1ms ICp 1,200 Forward Current DC IF A 600 1ms IFM 1,200 Maximum Junction Temperature Tjmax o C 175 Temperature under switching conditions Tjop o C -40 ~ +150 Storage Temperature Tstg o C -40 ~ +125 Isolation Voltage VISO VRMS 4,000 (AC 50Hz, 1 minute) Screw Torque Terminals (M6) - N·m 6 (1) Mounting (M5) - 4 (2) Notes: Recommended Value (1)5.5±0.5N·m (2)3.5±0.5N·m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA - - 5 Vce=1,700V, Vge=0V, Tj=25 o C - 3 10 Vce =1,700V, Vge=0V, Tj=150 o C Gate Emitter Leakage Current IGES nA -500 - +500 Vge=±20V, Vce=0V, Tj=25 o C Collector Emitter Saturation Voltage VCE(sat) V 2.5 3.0 3.7 Ic=600A, Vge=15V, Tj=150 o C Gate Emitter Threshold Voltage VGE(TO) V 6.2 6.9 7.6 Vce=10V, Ic=60mA, Tj=25 o C Input Capacitance Cies nF - 41 - Vce=10V, Vge=0V, f=100kHz, Tj=25 o C Internal Gate Resistance Rg(int) Ω - 3.3 - Switching Times Rise Time tr μs - 0.6 1.2 Vcc=1100V, Ic=600A Ls=55nH,Cge=22nF Rg(ON)=3.3Ω, Rg(OFF)=15Ω Vge=±15V, Tj=150 o C Turn On Time ton - 1.0 2.0 Fall Time tf - 0.5 1.2 Turn Off Time toff - 2.6 5.2 Peak Forward Voltage Drop VFM V 1.9 2.4 2.9 IF=600A, VGE=0V, Tj=150 o C Reverse Recovery Time trr μs - 0.3 0.6 VCC=1100V, Ic=600A, Ls=55nH,Cge=22nF Rg(ON)=3.3Ω, Rg(OFF)=15Ω Vge=±15V, Tj=150 o C Turn On Loss Eon(10%) J/P - 0.22 0.29 Turn Off Loss Eoff(10%) J/P - 0.32 0.41 Reverse Recovery Loss Err(10%) J/P - 0.18 0.28 SCSOA Isc A - 3000 - Vge≤15V, Vcc =1100V Tw≤10us, Tj=150 o C Thermal Resistance IGBT Rth(j-cf) K/W - 0.039 - Junction to case/fin, 8l/min, 50%LLC (per 1 arm) FWD Rth(j-cf) - 0.058 - IGBT Rth(cf-w) K/W - 0.041 - Case/fin to water, 8l/min, 50%LLC (per 1 arm) FWD Rth(cf-w) - 0.047 - PACKAGE CHARACTERISTICS Item Unit Characteristics Test Conditions Creepage Distance Between terminal mm >16 Terminal-Base mm >16 Comparative Tracking Index CTI V 600 * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision.
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Dual IGBT Module Spec.No.IGBT-SP-10006-R4 P1
MBM600F17D
PRELIMINARY SPECIFICATION
Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. * High thermal fatigue durability (delta Tc=70°C, N>30,000cycles) ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item Symbol Unit Specification Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage VGES V ±20
Collector Current DC IC A 600 1ms ICp 1,200
Forward Current DC IF A 600 1ms IFM 1,200
Maximum Junction Temperature Tjmax oC 175 Temperature under switching conditions Tjop oC -40 ~ +150 Storage Temperature Tstg oC -40 ~ +125 Isolation Voltage VISO VRMS 4,000 (AC 50Hz, 1 minute)
Creepage Distance Between terminal mm >16 Terminal-Base mm >16
Comparative Tracking Index CTI V 600
* Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision.
Dual IGBT Module Spec.No.IGBT-SP-10006-R4 P2
MBM600F17D
PRELIMINARY SPECIFICATION
DEFINITION OF TEST CIRCUIT
Fig.1 Switching test circuit
Fig.3 Definition of switching loss
t4t3
Ic
tontr
Vge10%
10%10%
90%Vce
t0
t0
t1 t2
Eon(10%)= Ic Vce dtt4
t3
Eon(Full)= Ic Vce dtt2
t1
t5
90%
90%
Vge
VceIc
10%10%
tofftf
t8t7
t0
t0
t6
Eoff(10%)= Ic Vce dtt8
t7
Eoff(Full)= Ic Vce dtt6
t5
t12
t11Err(10%)= IF Vce dt
Err(Full)= IF Vce dtt10
t9
0.1IF
t9 t10
Vce0.1Vce
0.5IrmIrm
-Ic
trr
t12t11
t0
IF
Fig.2 Definition of stray inductance
Ic
t0
VL
tL
Vce
t=tL
Ls=VL
dIcd( )
Vcc
Ls
LLOAD
Rg
Cge
G/D
15V
Vcc
Ls
LLOAD
Rg
Cge
G/D
15V
Dual IGBT Module Spec.No.IGBT-SP-10006-R4 P3
MBM600F17D
PRELIMINARY SPECIFICATION
STATIC CHARACTERISTICS
0
200
400
600
800
1,000
1,200
0 2 4 6 8 10
Col
lect
or C
urre
nt, I
C(A
)
Collector-Emitter Voltage, VCE(V)
Tj=25oC
VGE=15V
Collecter Current vs. Collector to Emitter Voltage
TYPICAL
13V
11V
9V
0
200
400
600
800
1000
1200
0 2 4 6 8 10
Col
lect
or C
urre
nt, I
C(A
)
Collector-Emitter Voltage, VCE(V)
Tj=150oC VGE=15V
Collecter Current vs. Collector to Emitter Voltage