MBN1500FH45F-H IGBT MODULE Spec.No.IGBT-SP-16035 R6 P 1 Silicon N-channel IGBT 4500V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT. Low driving power due to low input capacitance with trench MOS gate. Low noise recovery: Ultra soft fast recovery diode. High Current rate Package. Low Rth(j-c) & low stray inductance. RoHS ABSOLUTE MAXIMUM RATINGS (TC=25 o C ) Item Symbol Unit MBN1500FH45F-H Collector Emitter Voltage VCES V 4,500 Gate Emitter Voltage VGES V 20 Collector Current DC IC A 1,500 1ms ICRM 3,000 Forward Current DC IF A 1,500 1ms IFRM 3,000 Junction Temperature Tvj op o C -50 ~ +150 Storage Temperature Tstg o C -50 ~ +150 Isolation Voltage VISO VRMS 10,200(AC 1 minute) Screw Torque Terminals (M4/M8) - N·m 2/10 (1) Mounting (M6) - 6 (2) Notes: (1) Recommended Value 1.80.2/91N·m (2) Recommended Value 5.50.5N·m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current ICES mA - - 6 VCE=4,500V, VGE=0V, Tvj=25 o C - - 180 VCE=4,500V, VGE=0V, Tvj=150 o C Gate Emitter Leakage Current IGES nA -500 - +500 VGE=20V, VCE=0V, Tvj=25 o C Collector Emitter Saturation Voltage VCEsat V - 4.35 5.0 IC=1500A, VGE=15V, Tvj=150 o C Gate Emitter Threshold Voltage VGE(th) V 6.0 6.5 7.0 VCE=10V, IC=1500mA, Tvj=25 o C Input Capacitance Cies nF - 83 - VCE=10V, VGE=0V, f=100kHz, Tvj=25 o C Internal Gate Resistance RG(int) Ω - 2.6 - VCE=10V, VGE=0V, f=100kHz, Tvj=25 o C Turn On Delay Time td(on) s - 0.5 - VCC=2,800V, IC=1500A LS=165nH RG=3.3Ω (3) VGE=15V, Tvj=150 o C Rise Time tr - 0.3 - Turn Off Delay Time td(off) - 2.6 - Fall Time tf - 0.7 - Peak Forward Voltage Drop VF V - 2.8 3.2 IF=1500A, VGE=0V, Tvj=150 o C Reverse Recovery Time trr s - 1.3 - VCC=2,800V, IF=1500A, LS=165nH Tvj=150 o C Turn On Loss Eon J/P - 5.1 - VCC=2,800V, IC=1500A, LS=165nH RG=3.3Ω (3) VGE=15V, Tvj=150 o C Turn Off Loss Eoff J/P - 5.0 - Reverse Recovery Loss Err J/P - 5.6 - Short Circuit Pulse Width tsc s 10 - - VCC=3000V,Ls=165nH RG(on/off)=3.3/33Ω,V GE =15V, Tvj=150 o C Partial discharge extinction voltage Ve VRMS 3,500 - - f=50Hz, QPD≤10pC(acc. to IEC 61287) Stray inductance module LSCE nH - 10 - Thermal Impedance IGBT Rth(j-c) K/W - - 0.0085 Junction to case FWD Rth(j-c) - - 0.0115 Contact Thermal Impedance Rth(c-f) K/W - 0.005 - Case to fin Notes: (3) RG value is a test condition value for evaluation, not recommended value. Please, determine the suitable RG value by measuring switching behaviors. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC items shown in above table are according to IEC 60747–2 and IEC 60747–9.
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MBN1500FH45F-H
IGBT MODULE Spec.No.IGBT-SP-16035 R6 P 1
Silicon N-channel IGBT 4500V F version
FEATURES
Soft switching behavior, low switching loss & low conduction loss :
Soft low-injection punch-through
Advanced Trench High conductivity IGBT.
Low driving power due to low input capacitance with trench MOS gate.
Low noise recovery: Ultra soft fast recovery diode.
High Current rate Package.
Low Rth(j-c) & low stray inductance.
RoHS
ABSOLUTE MAXIMUM RATINGS (TC=25oC )
Item Symbol Unit MBN1500FH45F-HCollector Emitter Voltage VCES V 4,500Gate Emitter Voltage VGES V 20
Collector CurrentDC IC A
1,5001ms ICRM 3,000
Forward CurrentDC IF A
1,5001ms IFRM 3,000
Junction Temperature Tvj opoC -50 ~ +150
Storage Temperature TstgoC -50 ~ +150
Isolation Voltage VISO VRMS 10,200(AC 1 minute)
Screw TorqueTerminals (M4/M8) -
N·m2/10 (1)
Mounting (M6) - 6 (2)
Notes: (1) Recommended Value 1.80.2/91N·m (2) Recommended Value 5.50.5N·m