IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix S13-0167-Rev. C, 04-Feb-13 1 Document Number: 91280 For technical questions, contact: [email protected]THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120) • Straight Lead (IRFU9120, SiHFU9120) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = - 25 V, starting T J = 25 °C, L = 10 mH, R g = 25 , I AS = - 5.6 A (see fig. 12). c. I SD - 6.8 A, dI/dt 110 A/μs, V DD V DS , T J 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY V DS (V) - 100 R DS(on) () V GS = - 10 V 0.60 Q g (Max.) (nC) 18 Q gs (nC) 3.0 Q gd (nC) 9.0 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR9120-GE3 SiHFR9120TR-GE3 a SiHFR9120TRL-GE3 a SiHFU9120-GE3 Lead (Pb)-free IRFR9120PbF IRFR9120TRPbF a IRFR9120TRLPbF a IRFU9120PbF SiHFR9120-E3 SiHFR9120T-E3 a SiHFR9120TL-E3 a SiHFU9120-E3 ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Continuous Drain Current V GS at - 10 V T C = 25 °C I D - 5.6 A T C = 100 °C - 3.6 Pulsed Drain Current a I DM - 22 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount) e 0.020 Single Pulse Avalanche Energy b E AS 210 mJ Repetitive Avalanche Current a I AR - 5.6 A Repetitive Avalanche Energy a E AR 4.2 mJ Maximum Power Dissipation T C = 25 °C P D 42 W Maximum Power Dissipation (PCB Mount) e T A = 25 °C 2.5 Peak Diode Recovery dV/dt c dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) d for 10 s 260
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Power MOSFET - Vishay · L4 - 1.02 L5 1.01 1.52 L3 D L4 L5 b b2 e1 E1 D1 C e gage plane height (0.5 mm) A1 b3 E C2 A L H. Package Information Vishay Siliconix Revision: 16-Dec-2019
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For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFETFEATURES• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Surface Mount (IRFR9120, SiHFR9120)• Straight Lead (IRFU9120, SiHFU9120)• Available in Tape and Reel• P-Channel• Fast Switching• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTIONThird generation power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effictiveness.The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRFU, SiHFU series) is for through-holemounting applications. Power dissipation levels up to 1.5 Ware possible in typical surface mount applications.
Notea. See device orientation.
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = - 25 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = - 5.6 A (see fig. 12).c. ISD - 6.8 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.d. 1.6 mm from case.e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARYVDS (V) - 100
RDS(on) () VGS = - 10 V 0.60
Qg (Max.) (nC) 18
Qgs (nC) 3.0
Qgd (nC) 9.0
Configuration Single
S
G
D
P-Channel MOSFET
DPAK(TO-252)
IPAK(TO-251)
G D SS
D
G
D
ORDERING INFORMATIONPackage DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9120-GE3 SiHFR9120TR-GE3a SiHFR9120TRL-GE3a SiHFU9120-GE3
Lead (Pb)-freeIRFR9120PbF IRFR9120TRPbFa IRFR9120TRLPbFa IRFU9120PbF
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?91280.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VERSION 2: FACILITY CODE = N
Notes• Dimensioning and tolerance confirm to ASME Y14.5M-1994• All dimensions are in millimeters. Angles are in degrees• Heat sink side flash is max. 0.8 mm• Radius on terminal is optional
Notes1. Dimensioning and tolerancing per ASME Y14.5M-1994.2. Dimension are shown in inches and millimeters.3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.5. Lead dimension uncontrolled in L3.6. Dimension b1, b3 and c1 apply to base metal only.7. Outline conforms to JEDEC outline TO-251AA.
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