IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix S13-0169-Rev. C, 04-Feb-13 1 Document Number: 90335 For technical questions, contact: [email protected]THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Dynamic dV/dt Rating • Surface Mount (IRFR020, SiHFR020) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. V DD = 25 V, starting T J = 25 °C, L = 541 μH, R g = 25 , I AS = 14 A (see fig. 13). c. I SD 17 A, dI/dt 110 A/μs, V DD V DS , T J 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY V DS (V) 60 R DS(on) () V GS = 10 V 0.10 Q g (Max.) (nC) 25 Q gs (nC) 5.8 Q gd (nC) 11 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR020-GE3 SiHFR020TR-GE3 SiHFU020-GE3 Lead (Pb)-free IRFR020PbF IRFR020TRPbF a IRFU020PbF SiHFR020-E3 SiHFR020T-E3 a SiHFU020-E3 ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 V T C = 25 °C I D 14 A T C = 100 °C 9.0 Pulsed Drain Current a I DM 56 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount) e 0.020 Single Pulse Avalanche Energy b E AS 91 mJ Maximum Power Dissipation T C = 25 °C P D 42 W Maximum Power Dissipation (PCB Mount) e T A = 25 °C 2.5 Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) d for 10 s 260
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Power MOSFET - Vishay · ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Note a. ... • Dimension L3 is for reference only. L3 D L4 L5 b b2 e1 E1 D1 C
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For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFETFEATURES• Dynamic dV/dt Rating• Surface Mount (IRFR020, SiHFR020)• Available in Tape and Reel• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTIONThird generation power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques.
Notea. See device orientation.
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 13).c. ISD 17 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.d. 1.6 mm from case.e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARYVDS (V) 60
RDS(on) () VGS = 10 V 0.10
Qg (Max.) (nC) 25
Qgs (nC) 5.8
Qgd (nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
DPAK(TO-252)
IPAK(TO-251)
G D SS
D
G
D
ORDERING INFORMATIONPackage DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR020-GE3 SiHFR020TR-GE3 SiHFU020-GE3
Lead (Pb)-freeIRFR020PbF IRFR020TRPbFa IRFU020PbF
SiHFR020-E3 SiHFR020T-E3a SiHFU020-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 VTC = 25 °C
ID14
ATC = 100 °C 9.0
Pulsed Drain Currenta IDM 56
Linear Derating Factor 0.33W/°C
Linear Derating Factor (PCB Mount)e 0.020
Single Pulse Avalanche Energyb EAS 91 mJ
Maximum Power Dissipation TC = 25 °C PD
42W
Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature)d for 10 s 260
For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?90335.
P.W.Period
dI/dt
Diode recoverydV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-appliedvoltage
Reverserecoverycurrent
Body diode forwardcurrent
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.Period
+
-
+
+
+-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.• ISD controlled by duty factor “D”• D.U.T. - device under test
Notes1. Dimensioning and tolerancing per ASME Y14.5M-1994.2. Dimension are shown in inches and millimeters.3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.5. Lead dimension uncontrolled in L3.6. Dimension b1, b3 and c1 apply to base metal only.7. Outline conforms to JEDEC outline TO-251AA.
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