Properties & Interests Motivations Bismuth nanolines Haiku stripes Interests for 1D Nanolines templating Manganese chains CC BY : Bothered By Bees (Flickr) Explore 1D experimentally Probe the Tomanaga-Luttinger liquid theory More versatile than systems on vicinal surfaces Interconnects for novel electronics Why 1D chains on Si(001)? Implement the infinite length limit condition addressed by theory 4 Si dimers wide, 1.54 nm ⊥ Si dimers Straight, no kinks Nearly defect free Length limited by defects and terraces Tunable line density Self-assembled No vicinal surface Independent of step edges Gapped substrate Industrially relevant surface Filled state 1 nm Low current 1 nm High current +2.5 V +2.0 V + 2.0 V 1 nm + 2.5 V y x y z 1D delocalized state close to the Si band gap Purely electronic effect Data Simulation Data Reproduce the 1D central state… … and predict it as delocalized along the nanoline Empty state Charge densities simulations Electronic effects : both central atoms are rised at high current Very good matching between STM simulation (integrated DFT) and experimental data Run along the nanolines Does not correspond to any atom position in the structure 1 nm Simulation Perfect 1D electronic model system ? Data Simulation Data Simulation Synthesis Haiku stripes form by exposing Bi nanolines to hydrogen: Bi dimers are stripped by H, exact mechanism not yet understood Si reconstruction (Haiku structure) below the Bi nanolines Composed of 5- and 7- fold rings of Si extending 5 layers below the surface No trace of contaminations after hydrogenation in XPS XPS Bi Bi Bi Si Si After H exposure Before H exposure B C O O Freshly flashed Si Counts/s Energy Mn chains near Bi nanolines Design by François Bianco under CC-BY-SA licence V = -2.5 V, I = 80 pA V = -2.5 V, I = 200 pA V = +2.5 V, I = 150 pA V = +2.0 V, I = 150 pA Huge aspect ratio (length/width) achievable Stable up to 400°C in UHV Inert in air Stable in real life's lab ! V = -2.2 V, I = 100 pA After 25 min exposure to air 3 nm Bi nanolines 1 nm 1 nm Haiku stripes 1 nm Mn chains Mn deposition 1 nm Si(001) Bi deposition Haiku structure Sena, Bowler, J. Phys.: Cond. Matt. 23 (2011) 305003 Liu et al. Surf. Sci. 602 (2008) 986 Interesting magnetic structure predicted by spin polarized DFT Unusual zig-zag chain structure Structure still under investigation together with DFT modelling Bi nanolines promote growth of long Mn chains Up to 40 atoms chains (self-assembled) Double chain of Bi dimers Bias dependant contrast in filled state reproduced by STM simulation Bi nanolines grow on Si(001) at 570°C Strained Si dimers -2.5 V -2.3 V -3.0 V Strained Si dimers -2.5 V -2.3 V -3.0 V H y d r o g e n at i o n Mn chains forms between Bi nanolines Perfect 1D spin chain model system ? Spin densities simulations Model z x Haiku stripes Mn chains are good candidate for 1D spin system Look for metallic properties... .... and contacting for transport measurements Optical measurements 50 nm Streched 2× vertically V = -2.5 V, I = 180 pA 1.3 μm long Promising 1D templates for atom chain assembly Hydrogen covered Haiku structure, no Bi Au, Ag atomic chains J. Phys. Cond. Matt. 19, 226213 (2007) Mat. Sci. and Eng. 140, 160 (2007) Fe interstitial atomic chains Nearby Mn atomic chains Appl. Phys. Lett. 89, 09315 (2006) Appl. Surf. Sci. 254, 96 (2007) Surf. Sci, 602, 986 (2008) Deposition flux Potential wells Diffusion constants Surface energy Peirels instabilities Spinon and holons Possible metalic chains on Si(001) and Bi-nanolines : V = -3.0 V, I = 400 pA V = -3.5 V, I = 200 pA V = -2.8 V, I = 200 pA V = -.3.0 V, I = 200 pA F. Bianco, Phys. Rev. B, 84, 035328 (2011) J. Owen, et al. J. Mater. Sci. 41, 4568 (2006) S. A. Köster, in prep. (2012) old pond . . . a frog leaps in water’s sound 古池や 蛙飛込む 水の音 5 7 5 7 5 I = 900 pA Proposed model C-type chains Mn between Si dimers in first layer Fairly good matching between STM simulation (integrated DFT) and experimental data x x z y V = -3.1 V, I = 80 pA Filled state Empty state V = 2.0 V, I = 80 pA 5 nm 5 nm 5 nm 1 nm 1 nm 1 nm Outlook 20 nm Bi nanolines 150 nm V = -2.9 V, I = 100 pA V = -2.0 V, I = 350 pA 1 nm V = -3.3 V, I = 100 pA 10 nm F. Bianco, S. A. Köster, J. H. G. Owen, and Ch. Renner DPMC, MaNEP, University of Geneva D. R. Bowler UCL and LCN, London