PMMA & HSQ trend chart December 2012 Sangeeth kallatt
PMMA sample preparation
• Substrate : 100 oxide & Si wafer• Cleaning : O2 plasma clean (2000W, 10 min)• Spin speed : final rpm 6000 for 40 sec• Pre bake: 180 degrees for 3 min• Exposure parameters:
• EHT : 20 Kv• Aperture : 10um• Working distance: 5mm• Development time : 30 sec in MIBK: IPA (1:3)
Contrast curve for PMMA 950 A2
D0 = clearing dose ≈ 140D100 = dose with resist insoluble ≈ 95
Which gives ϒ = 6.8
HSQ sample preparation
• Substrate : Si wafer• Cleaning : O2 plasma clean (2000W, 10 min)• Spin speed : final rpm 6000 for 40 sec• Pre bake: no pre bake • Exposure parameters:
• EHT : 20 Kv• Aperture : 10um• Working distance: 5mm• Development time : 2 min in 2.36 % TMAH