Photoresists For Plating & Etching Applications - Metal plating - Plasma etching - Enhanced adhesion to copper - Two functional groups to miximize adhesion to copper and copper oxide - Enhanced adhesion to gold Applications - Solder bump plating Copper pillar plating Gold bump plating Copper redistribution plating Properties - Positive tone thick film photo resist Cover >50μm thick at ‘Single Coating’ Chemically amplified type: High sensitivity Straight wall angle pattern Good Plating bath resistance Easy to remove by safe solvent R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O Au Au Au Au Au Au Au Au Au Substrate Photoresist R 1 A Si O R 1 S A Cu CuO Cu Cu CuO Cu R 1 A Si O R 1 S A Post Photoresist Coating Post Photoresist Coating SIPR-9740 on Copper With and Without PR1P Photoresist Cu Substrate SIPR-3251 - i-line and broadband sensitive - Positive tone - Novalak-based - 30μm in a single coat - TMAH-developable - Excellent plating resistance - Easily stripped - Custom viscosities available 1.5μm L/S FT = 6μm 465 mJ/cm Adhesion Promoters SIPR-7500 Series Photoresists SIPR-3251 Photoresist PR20P PR1P PR1P Blank (No Primer) 625mJ 550mJ SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S 475mJ Photoresist Materials Metal Adhesion Promoters Adhesion Promoters HMDS MicroPrime HP Primer HMDS MicroPrime HP Primer (CH 3 ) 3 SiNHSi H 3 ) 3 Ultra- High Purity Grade HDMS Photoresist Adhesion Promoter MicroPrime MP-90 & 95 HMDS/DEATS Blend MicroPrime P10 & P20 PGMEA/HMDS Blend Lithographic Performance at High / FT = 40μm Resistance against Plating Solution Cu Plating Performance of SINR-7500W Resist Film Thickness; 60um Via Size; 60um Exposure; Proximity Aligner Resist strip : PGMEA Dipping Sn-Ag Solder plating solution TS-202 (ISHIHARA Chemical) Condition; 30ºC / Dipping Resist Film Thickness; 70um Via Size; 60um Exposure; Proximity Aligner Before dipping Dipped for 120 min. No Cracks Conditions; FT ; 40um, Substrate; Si, SB = 130ºC x 120sec., Exposure; NSR-i11 (Nikon) NA = 0.46,σ = 0.38, PEB = 120ºC x 120sec., Dev.; 2.38% TMAH aq., 60sec. Puddle x 6 Times 10.0um L/S 800mJ Focus; 0.0um (Large Size Image) -4.0um -3.0um -2.0um -1.0um 0.0um +1.0um +2.0um +3.0um +4.0um Optical Scope CS SEM CS SEM