Optoelectronic Integration Bergur Gudbergsson Zach Whitney Marcus Hale As the data transfer limits of conventional electric interconnects are approached, emerging on-chip optoelectric solutions look promising as means of keeping up with increased processing power, efficiency, and bandwidth requirements. This presentation will explore fiber optics, vertical-cavity surface emitting lasers (VCSEL), optical 05/05/1 4 1
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Optoelectronic IntegrationBergur GudbergssonZach WhitneyMarcus HaleAs the data transfer limits of conventional electric interconnects are approached, emerging on-chip optoelectric solutions look promising as means of
keeping up with increased processing power, efficiency, and bandwidth requirements. This presentation will explore fiber optics, vertical-cavity surface emitting
lasers (VCSEL), optical interconnects, and photodiodes.
PIN Photodiode– Absorption– Energy Band Diagrams– Applications
VCSEL– Basic Operation– Structure– VCSEL-PIN TRx function & fabrication
Optical Interconnects– Basic operation
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The Basics of Fiber• A fiber cable consists of:
1. Core2. Cladding3. Buffer4. Jacket
• “Total Internal Reflection”
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Cladding has lower refractive index than the core which causes total internal reflection within the core
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Fiber Types• Two main types of fiber optics cables– Single Mode Fiber (SMF) (9μM)– Multi Mode Fiber (MMF) (62.5μM or 50μM)
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Single Mode Fiber• Small core carries single mode of light• No modal dispersion• Long-haul data transmission• Requires expensive coherent laser light source• Requires specific connector alignment• Operates in 1.3μM -1.5μM Region
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Multi Mode Fiber• Multiple modes of light can propagate• Modal dispersion limits distance (500 meters)• Uses cheaper light sources– LED– VCSEL
• Larger alignment tolerances• Typically operates at 0.85μM
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Optical Power• Light follows “inverse square law”– inversely proportional to distance squared– Attenuation = loss of intensity
• Measured in Decibel-milliWatts (dBm /dBmW)– 0dBm is 1 mW– 3dBm is 2 mW– -50dBm is 10 nW
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Transmission BandsSplit into four windows– 850nM• High attenuation
– 1310nM• Zero modal dispersion for SMF• Up to 10kM reach
– 1550nM (Conventional-band)• Amplified via erbium doped fibers
– 1570-1610nm (Long-band)
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Typical Mux/Demux System
• Multiple signals are generated• Multiplexer combines the lights into a signal carrier signal• Signal is transmitted• λν=c• Signal is re-separated• Signal is received
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PIN Photodiodes• Photodiodes with an Intrinsic (undoped)
region between highly doped P and N junctions.
• Anti-reflection (1/4 wavelength)
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Absorption• Photons Absorbed in the intrinsic region• Creates Carriers• Increases Photocurrent (Light into Current)• Si: infrared(700nm) up to 1μm• InGaAS: up to 1.7μm (Longer wavelengths)
Conclusion• All of these optoelectrical innovations
contribute to the growing field of optical interconnection technology
• Immensely complex, research still underway
• Huge growth potential
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References• Arshad, T. S., Othman, M. A., & Yasin, N. Y. Comparison on IV Characteristics Analysis
between Silicon and InGaAs PIN Photodiode.IEEE (ICICI-BME), 71-75. Retrieved May 1, 2014, from http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6698467
• Introduction to DWDM For Metropolitan Networks. (2000). San Jose, CA: Cisco Systems, Inc.
• Kenichi, I. VCSEL -Its Conception, Development, and Future-. IEEE (MOC' 13), 1-2. Retrieved May 1, 2014, from http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6715057
• Kern, A., Al-Samaneh, A., Wahl, D., & Michalzik, R. Monolithic VCSEL–PIN Photodiode Integration for Bidirectional Optical Data Transmission. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 19, 1-13.
• Lifeng, H., Yongfeng, M., & Yuan, F. Fabrication and Testing of 980nm High-Power VCSEL with AlN Film Passivation Layer. IEEE (ICOM), 45-48. Retrieved May 1, 2014, from http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6316212
References• Mishra, S., Chaudhary, N., & Singh, K. Overview of Optical Interconnect
Technology. International Journal of Scientific & Engineering Research, 3, 1-7. Retrieved May 1, 2014, from http://arxiv.org/abs/1303.3954
• Muramoto, Y., & Ishibashi, T. InP=InGaAs pin photodiode structure maximising bandwidth and efficiency. ELECTRONICS LETTERS, 29.
• Paschotta, D. R. (n.d.). p–i–n Photodiodes. Encyclopedia of Laser Physics and Technology. Retrieved May 1, 2014, from http://www.rp-photonics.com/p_i_n_photodiodes.html
• Paschotta, R. (n.d.). Passive Fiber Optics. Tutorial “”: multimode fibers, number of modes, core diameter, numerical aperture, graded-index fiber. Retrieved May 1, 2014, from http://www.rp-photonics.com/passive_fiber_optics4.html
• Single mode optical fiber. (2014, April 22). Wikipedia. Retrieved May 2, 2014, from https://en.wikipedia.org/wiki/Single_mode_optical_fiber
References• Steenbergen, R. (Director) (2013, February 4). Everything You Always Wanted to Know About
Optical Networking - But Were Afraid to Ask. NANOG57. Lecture conducted from GTT, Orlando, Florida.
• Technologies. (n.d.). . . Retrieved May 1, 2014, from http://www.pacer.co.uk/Assets/Pacer/User/Photodiode%20Typical%20Applications.pdf
• Total internal reflection. (2014, April 28). Wikipedia. Retrieved May 2, 2014, from https://en.wikipedia.org/wiki/Total_internal_reflection
• Zeghbroeck., B. V. (2011, January 1). Chapter 4: p-n Junctions. Optoelectronic devices. Retrieved May 1, 2014, from http://ecee.colorado.edu/~bart/book/book/chapter4/ch4_6.htm