REV 1.0 1 Aug-10-2009 N-Channel Enhancement Mode Field Effect Transistor P2804BDG TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V T C = 25 °C 25 Continuous Drain Current T C = 100 °C I D 16 Pulsed Drain Current 1 I DM 75 Avalanche Current I AS 26 A Avalanche Energy L = 0.1mH E AS 34 mJ T C = 25 °C 31 Power Dissipation T C = 100 °C P D 12.5 W Operating Junction & Storage Temperature Range T j , T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R JC 4 Junction-to-Ambient R JA 50 °C / W 1 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250A 40 Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250A 1 2 3 V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V ±250 nA V DS = 32V, V GS = 0V 1 Zero Gate Voltage Drain Current I DSS V DS = 30V, V GS = 0V, T J = 125 °C 10 A On-State Drain Current 1 I D(ON) V DS = 10V, V GS = 10V 75 A V GS = 10V, I D = 18A 15 28 Drain-Source On-State Resistance 1 R DS(ON) V GS = 5V, I D = 12A 27 50 mΩ 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 40V 28mΩ 25A G D S
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
REV 1.0
1
Aug-10-2009
N-Channel Enhancement Mode Field Effect Transistor
P2804BDG TO-252
Halogen-Free & Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TC = 25 °C 25 Continuous Drain Current
TC = 100 °C ID
16
Pulsed Drain Current1 IDM 75
Avalanche Current IAS 26
A
Avalanche Energy L = 0.1mH EAS 34 mJ
TC = 25 °C 31 Power Dissipation
TC = 100 °C PD
12.5 W
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RJC 4
Junction-to-Ambient RJA 50 °C / W
1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 2 3 V