RF Power Field Effect Transistors N--Channel Enhancement--ModeLateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. Typical Two--Tone Performance @ 2170 MHz: V DD = 28 Vdc, I DQ = 130 mA, P out = 10 W PEP Power Gain — 15.5 dB Drain Efficiency — 36% IMD — --34 dBc Typical 2--Carrier W--CDMA Performance: V DD = 28 Vdc, I DQ = 130 mA, P out = 1 W Avg., Full Frequency Band (2130--2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain — 15.5 dB Drain Efficiency — 15% IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth Typical Single--Carrier N--CDMA Performance: V DD = 28 Vdc, I DQ = 130 mA, P out = 1 W Avg., Full Frequency Band (1930--1990 MHz), IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 16% ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth Typical GSM EDGE Performance: V DD = 28 Vdc, I DQ = 130 mA, P out = 4 W Avg., Full Frequency Band (1805--1880 MHz) Power Gain — 16 dB Drain Efficiency — 33% EVM — 1.3% rms Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. Document Number: MMRF1004N Rev. 1, 1/2014 Freescale Semiconductor Technical Data (Top View) Drain 2 1 Gate 1600--2200 MHz, 10 W, 28 V GSM, GSM EDGE SINGLE N--CDMA 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs MMRF1004NR1 MMRF1004GNR1 TO--270--2 PLASTIC MMRF1004NR1 TO--270G--2 PLASTIC MMRF1004GNR1 Figure 1. Pin Connections Note: The backside of the package is the source terminal for the transistor. Freescale Semiconductor, Inc., 2013--2014. All rights reserved.
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1RF Device DataFreescale Semiconductor
RF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulationand multipurpose amplifier applications.
Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ =130 mA, Pout = 10 W PEP
Power Gain — 15.5 dBDrain Efficiency — 36%IMD — --34 dBc
Typical 2--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA,Pout = 1 W Avg., Full Frequency Band (2130--2170 MHz), ChannelBandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dBDrain Efficiency — 15%IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel BandwidthACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth
Typical Single--Carrier N--CDMA Performance: VDD = 28 Vdc, IDQ =130 mA, Pout = 1 W Avg., Full Frequency Band (1930--1990 MHz), IS--95(Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth =1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dBDrain Efficiency — 16%ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth
Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout =4 W Avg., Full Frequency Band (1805--1880 MHz)
Power Gain — 16 dBDrain Efficiency — 33%EVM — 1.3% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CWOutput Power
Features Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
1. Continuous use at maximum temperature will affect MTTF.2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.3. Part internally matched on input.
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gullwing (GN) parts.
4RF Device Data
Freescale Semiconductor
MMRF1004NR1 MMRF1004GNR1
Figure 2. MMRF1004NR1 Test Circuit Schematic — 2110--2170 MHz
Z10 0.930 x 0.350 MicrostripZ11 0.930 x 0.400 MicrostripZ12 0.050 x 0.105 MicrostripZ13 0.405 x 0.242 MicrostripZ14 0.066 x 0.740 MicrostripZ16, Z17 0.050 x 1.250 MicrostripPCB Taconic RF--35, 0.030, r = 3.5
Z1, Z15 0.066 x 0.480 MicrostripZ2 0.066 x 0.765 MicrostripZ3, Z5 0.066 x 0.340 x 0.050 TaperZ4 0.340 x 0.295 MicrostripZ6 0.020 x 0.060 MicrostripZ7 0.0905 x 0.280 MicrostripZ8 0.0905 x 0.330 MicrostripZ9 0.050 x 0.980 Microstrip
RFOUTPUT
VBIAS VSUPPLY
RFINPUT
DUT
Z1
C2
R1
C11
+
C1 C7R2 Z9
R3
Z2 Z3 Z4 Z5 Z6 Z7 Z8
Z10
Z16
C3 C4 C5
Z11 Z12 Z13 Z14
C6
Z15
Z17
C8 C9 C10
Table 6. MMRF1004NR1 Test Circuit Component Designations and Values — 2110--2170 MHz
Figure 16. CCDF W--CDMA 3GPP, Test Model 1,64 DPCH, 67% Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2 4 6 8
Figure 17. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHzChannel BW
--IM3 in3.84 MHz BW
+IM3 in3.84 MHz BW
--ACPR in3.84 MHz BW
+ACPR in3.84 MHz BW
PROBABILITY
(%)
(dB)
+20
+30
0
--10
--40
--50
--60
--70
--80
--20
205 15100--5--10--15--20--25 25
--30W--CDMA. ACPR Measured in 3.84 MHz ChannelBandwidth @ 5 MHz Offset. IM3 Measured in3.84 MHz Bandwidth @ 10 MHz Offset. PAR =8.5 dB @ 0.01% Probability on CCDF
10RF Device Data
Freescale Semiconductor
MMRF1004NR1 MMRF1004GNR1
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
RFOUTPUT
VBIAS VSUPPLY
RFINPUT
DUT
Z1
C2
R1
C11
+
C1 C7R2 Z7
R3
Z2 Z3 Z4 Z5 Z6
Z8
Z17
C3 C4 C5
Z11 Z12 Z13 Z14
C6
Z16
Z18
C8 C9 C10
Z9 Z10 Z15
Figure 18. MMRF1004NR1 Test Circuit Schematic — 1930--1990 MHz
Z11 0.244 x 0.423 MicrostripZ12 0.244 x 0.066 x 0.089 TaperZ13 0.066 x 0.182 MicrostripZ14 0.066 x 0.263 MicrostripZ15 0.236 x 0.118 MicrostripZ16 0.066 x 0.099 MicrostripZ17, Z18 0.050 x 1.250 MicrostripPCB Taconic RF--35, 0.030, r = 3.5
Z1 0.066 x 0.480 MicrostripZ2 0.066 x 0.728 MicrostripZ3 0.354 x 0.512 MicrostripZ4 0.066 x 0.079 MicrostripZ5, Z6 0.591 x 0.335 MicrostripZ7 0.050 x 0.980 MicrostripZ8 1.142 x 0.350 MicrostripZ9 1.142 x 0.516 MicrostripZ10 0.433 x 0.276 Microstrip
Table 7. MMRF1004NR1 Test Circuit Component Designations and Values — 1930--1990 MHz
Figure 24. MMRF1004NR1 Test Circuit Schematic — 1805--1880 MHz
Z10 1.142 x 0.350 MicrostripZ11 1.142 x 0.516 MicrostripZ12 0.433 x 0.276 MicrostripZ13 0.276 x 0.157 MicrostripZ14 0.236 x 0.433 MicrostripZ15 0.066 x 0.104 MicrostripZ17, Z18 0.050 x 1.250 MicrostripPCB Taconic RF--35, 0.030, r = 3.5
Z1, Z16 0.066 x 0.480 MicrostripZ2 0.066 x 0.137 MicrostripZ3 0.236 x 0.236 MicrostripZ4 0.066 x 0.354 MicrostripZ5 0.551 x 0.512 MicrostripZ6 0.066 x 0.079 MicrostripZ7 0.591 x 0.189 MicrostripZ8 0.591 x 0.334 MicrostripZ9 0.050 x 0.980 Microstrip
Z7Z6
Table 8. MMRF1004NR1 Test Circuit Component Designations and Values —1805--1880 MHz
Refer to the following documents to aid your design process.
Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Dec. 2013 Initial Release of Data Sheet
1 Jan. 2014 Fig. 1, Pin Connections: corrected pin 1 and pin 2 labels to align with labelling in the mechanical outline, p. 1
Table 2. Thermal Characteristics: CW thermal value changed from 2.5 to 2.3C/W to reflect recent thermaltest results; two--tone test corrected from 5 W PEP to 10 W PEP and the thermal value changed from 5.9 to2.9C/W to reflect recent thermal test results, p. 2
MMRF1004NR1 MMRF1004GNR1
27RF Device DataFreescale Semiconductor
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