MURI 2007 [email protected]u 1 Neutron- Induced Multiple-Bit Upset Alan D. Tipton 1 , Jonathan A. Pellish 1 , Patrick R. Fleming 1 , Ronald D. Schrimpf 1,2 , Robert A. Reed 2 , Robert A. Weller 1,2 , Marcus H. Mendenhall 3 1. Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville,TN 2. Vanderbilt University, Institute for Space and Defense Electronics, Nashville, TN 3. Vanderbilt University, W. M. Keck Free Electron Laser Center, Nashville, TN
Neutron-Induced Multiple-Bit Upset. Alan D. Tipton 1 , Jonathan A. Pellish 1 , Patrick R. Fleming 1 , Ronald D. Schrimpf 1,2 , Robert A. Reed 2 , Robert A. Weller 1,2 , Marcus H. Mendenhall 3. Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville,TN - PowerPoint PPT Presentation
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Neutron-Induced Multiple-Bit UpsetAlan D. Tipton1, Jonathan A. Pellish1,Patrick R. Fleming1, Ronald D. Schrimpf1,2,Robert A. Reed2, Robert A. Weller1,2,Marcus H. Mendenhall3
1. Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville,TN
2. Vanderbilt University, Institute for Space and Defense Electronics, Nashville, TN
3. Vanderbilt University, W. M. Keck Free Electron Laser Center, Nashville, TN
Conclusion• Multiple-bit upset is increasing for highly-scaled devices
• Neutron irradiation has been modeled using MRED for a 90 nm CMOS technology
• Cross section differs between frontside and backside irradiation
• Fraction of MBU exhibits an angle dependence for neutron irradiation– Fraction increases at grazing angles– Neutron testing must account for these dependencies