Document Number: 91291 www.vishay.com S-81378-Rev. A, 07-Jul-08 1 Power MOSFET IRFZ44, SiHFZ44 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 °C, L = 44 μH, R G = 25 Ω, I AS = 51 A (see fig. 12). c. I SD ≤ 51 A, dI/dt ≤ 250 A/μs, V DD ≤ V DS , T J ≤ 175 °C. d. 1.6 mm from case. e. Current limited by the package, (die current = 51 A). PRODUCT SUMMARY V DS (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nC) 67 Q gs (nC) 18 Q gd (nC) 25 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFZ44PbF SiHFZ44-E3 SnPb IRFZ44 SiHFZ44 ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ± 20 Continuous Drain Current e V GS at 10 V T C = 25 °C I D 50 A Continuous Drain Current T C = 100 °C 36 Pulsed Drain Current a I DM 200 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b E AS 100 mJ Maximum Power Dissipation T C = 25 °C P D 150 W Peak Diode Recovery dV/dt c dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply
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Document Number: 91291 www.vishay.comS-81378-Rev. A, 07-Jul-08 1
Power MOSFET
IRFZ44, SiHFZ44Vishay Siliconix
FEATURES• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The TO-220 package is universially preferred forcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12).c. ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.d. 1.6 mm from case.e. Current limited by the package, (die current = 51 A).
PRODUCT SUMMARYVDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.028
Qg (Max.) (nC) 67
Qgs (nC) 18
Qgd (nC) 25
Configuration Single
N-Channel MOSFET
G
D
S
TO-220
GD
S
Available
RoHS*COMPLIANT
ORDERING INFORMATIONPackage TO-220
Lead (Pb)-freeIRFZ44PbF
SiHFZ44-E3
SnPbIRFZ44
SiHFZ44
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise notedPARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrenteVGS at 10 V
TC = 25 °C ID
50
AContinuous Drain Current TC = 100 °C 36
Pulsed Drain Currenta IDM 200
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 100 mJ
Maximum Power Dissipation TC = 25 °C PD 150 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature)d for 10 s 300
Mounting Torque 6-32 or M3 screw10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 912912 S-81378-Rev. A, 07-Jul-08
IRFZ44, SiHFZ44Vishay Siliconix
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYP. MAX. UNIT
Document Number: 91291 www.vishay.comS-81378-Rev. A, 07-Jul-08 7
IRFZ44, SiHFZ44Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?91291.
P.W.Period
dI/dt
Diode recoverydV/dt
Ripple ≤ 5 %
Body diode forward dropRe-appliedvoltage
Reverserecoverycurrent
Body diode forwardcurrent
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.Period
+
-
+
+
+-
-
-
* VGS = 5 V for logic level devices and 3 V drive devices
Peak Diode Recovery dV/dt Test Circuit
RG
VDD
• dV/dt controlled by RG• ISD controlled by duty factor "D"• D.U.T. - device under test
All product specifications and data are subject to change without notice.
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