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MODULE 2 8086/8088 Hardware specifications
105

Microprocessor & Microcontrollers Module 2

Dec 13, 2014

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8086/88 microprocessor architecturemin/max mode Coprocessor and Multiprocessor configuration  hardware organization of address spacecontrol signals andI/O interfaces Memory devices, circuits and sub system design – various types of memories, wait state and system memory circuitry.
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Page 1: Microprocessor & Microcontrollers Module 2

MODULE 2

80868088 Hardware specifications

2

Introduction

bull describe pin functions of both 8086 and 8088bull provide details

ndash clock generation bus buffering bus latching timing

ndash wait states minimum and maximum mode operation

bull Fig 9-1 Pin-outs of 80868088ndash 40-pin dual in-line packages(DIPs)

bull difference ndash data bus width rarr 8086 16 bit 8088 8 bit

ndash pin 28 rarr 8086 MIOrsquo 8088 IOMrsquo

ndash pin 34 rarr 8086 BHErsquoS7 8088 SS0

3

Fig 9-1bull Fig 9-1

4

Pin Connections

bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1

ndash data whenever ALE = 0

ndash high-impedance state during a hold acknowledge

bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge

bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1

ndash data bits D15-D8 whenever ALE = 0

ndash high-impedance state during a hold acknowledge

5

Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)

ndash memory address A19-A16 status bits S6-S3

ndash high-impedance state during a hold acknowledge

ndash S6 always remain a logic 0

ndash S5 indicate condition of IF flag bits

ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)

ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20

6

Pin Connectionsbull RDrsquo read signal

ndash data bus receive data from memory or IO device RDrsquo=0

ndash high-impedance state during a hold acknowledge

bull READY ndash micro enter into wait states and remain idle READY = 0

ndash no effect on the operation of micro READY = 1

bull INTR interrupt requestndash used to request a hardware interrupt

ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 2: Microprocessor & Microcontrollers Module 2

2

Introduction

bull describe pin functions of both 8086 and 8088bull provide details

ndash clock generation bus buffering bus latching timing

ndash wait states minimum and maximum mode operation

bull Fig 9-1 Pin-outs of 80868088ndash 40-pin dual in-line packages(DIPs)

bull difference ndash data bus width rarr 8086 16 bit 8088 8 bit

ndash pin 28 rarr 8086 MIOrsquo 8088 IOMrsquo

ndash pin 34 rarr 8086 BHErsquoS7 8088 SS0

3

Fig 9-1bull Fig 9-1

4

Pin Connections

bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1

ndash data whenever ALE = 0

ndash high-impedance state during a hold acknowledge

bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge

bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1

ndash data bits D15-D8 whenever ALE = 0

ndash high-impedance state during a hold acknowledge

5

Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)

ndash memory address A19-A16 status bits S6-S3

ndash high-impedance state during a hold acknowledge

ndash S6 always remain a logic 0

ndash S5 indicate condition of IF flag bits

ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)

ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20

6

Pin Connectionsbull RDrsquo read signal

ndash data bus receive data from memory or IO device RDrsquo=0

ndash high-impedance state during a hold acknowledge

bull READY ndash micro enter into wait states and remain idle READY = 0

ndash no effect on the operation of micro READY = 1

bull INTR interrupt requestndash used to request a hardware interrupt

ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 3: Microprocessor & Microcontrollers Module 2

3

Fig 9-1bull Fig 9-1

4

Pin Connections

bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1

ndash data whenever ALE = 0

ndash high-impedance state during a hold acknowledge

bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge

bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1

ndash data bits D15-D8 whenever ALE = 0

ndash high-impedance state during a hold acknowledge

5

Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)

ndash memory address A19-A16 status bits S6-S3

ndash high-impedance state during a hold acknowledge

ndash S6 always remain a logic 0

ndash S5 indicate condition of IF flag bits

ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)

ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20

6

Pin Connectionsbull RDrsquo read signal

ndash data bus receive data from memory or IO device RDrsquo=0

ndash high-impedance state during a hold acknowledge

bull READY ndash micro enter into wait states and remain idle READY = 0

ndash no effect on the operation of micro READY = 1

bull INTR interrupt requestndash used to request a hardware interrupt

ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 4: Microprocessor & Microcontrollers Module 2

4

Pin Connections

bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1

ndash data whenever ALE = 0

ndash high-impedance state during a hold acknowledge

bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge

bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1

ndash data bits D15-D8 whenever ALE = 0

ndash high-impedance state during a hold acknowledge

5

Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)

ndash memory address A19-A16 status bits S6-S3

ndash high-impedance state during a hold acknowledge

ndash S6 always remain a logic 0

ndash S5 indicate condition of IF flag bits

ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)

ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20

6

Pin Connectionsbull RDrsquo read signal

ndash data bus receive data from memory or IO device RDrsquo=0

ndash high-impedance state during a hold acknowledge

bull READY ndash micro enter into wait states and remain idle READY = 0

ndash no effect on the operation of micro READY = 1

bull INTR interrupt requestndash used to request a hardware interrupt

ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 5: Microprocessor & Microcontrollers Module 2

5

Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)

ndash memory address A19-A16 status bits S6-S3

ndash high-impedance state during a hold acknowledge

ndash S6 always remain a logic 0

ndash S5 indicate condition of IF flag bits

ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)

ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20

6

Pin Connectionsbull RDrsquo read signal

ndash data bus receive data from memory or IO device RDrsquo=0

ndash high-impedance state during a hold acknowledge

bull READY ndash micro enter into wait states and remain idle READY = 0

ndash no effect on the operation of micro READY = 1

bull INTR interrupt requestndash used to request a hardware interrupt

ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 6: Microprocessor & Microcontrollers Module 2

6

Pin Connectionsbull RDrsquo read signal

ndash data bus receive data from memory or IO device RDrsquo=0

ndash high-impedance state during a hold acknowledge

bull READY ndash micro enter into wait states and remain idle READY = 0

ndash no effect on the operation of micro READY = 1

bull INTR interrupt requestndash used to request a hardware interrupt

ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 7: Microprocessor & Microcontrollers Module 2

7

Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction

ndash WAIT instruction function as a NOP if TESTrsquo= 0

ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1

bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit

ndash if NMI is activated use interrupt vector 2

bull RESET ndash micro reset if RESET held high for a minimum of four clock

bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33

bull VCC(power supply) +50V plusmn10

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 8: Microprocessor & Microcontrollers Module 2

8

Pin Connectionsbull GND(Ground) two pins labeled GND

bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable

ndash enable the most significant data bus bits(D15-D8) during read or write operation

ndash status of S7 always a logic 1

bull Minimum Mode Pins MN = 1(directly to +50V) next p

bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO

ndash address bus whether memory or IO port address

bull WRrsquo write signal(high impedance state during hold ack)

ndash strobe that indicate that output data to memory or IO

ndash during WRrsquo=0 data bus contains valid data for M or IO

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 9: Microprocessor & Microcontrollers Module 2

9

Fig 9-1bull Fig 9-1

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 10: Microprocessor & Microcontrollers Module 2

10

Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin

ndash normally used to gate interrupt vector no onto data bus

bull ALE(address latch enable) does not float during hold ack

ndash addressdata bus contain address information

bull DTRrsquo(data transmitreceive)

ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data

ndash used to enable external data bus buffers

bull DEN(data bus enable) activate external data bus buffers

bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places

address data and control bus at high-impedance state

ndash HOLD=0 micro execute software normally

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 11: Microprocessor & Microcontrollers Module 2

11

Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state

bull SS0rsquo equivalent to S0 pin in maximum mode operation

ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 12: Microprocessor & Microcontrollers Module 2

12

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 13: Microprocessor & Microcontrollers Module 2

13

Fig 9-1bull Fig 9-1

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 14: Microprocessor & Microcontrollers Module 2

14

Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA

ndash bi-directional request and grant DMA operation

bull LOCKrsquo(lock output) used to lock peripherals off the system

ndash activated by using the LOCK prefix on any instruction

bull QS1 QS0(queue status)

ndash show status of internal instruction queue Table 9-7

ndash provided for access by the numeric coprocessor(8087)

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 15: Microprocessor & Microcontrollers Module 2

15

Fig 9-4bull Fig 9-4

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 16: Microprocessor & Microcontrollers Module 2

16

9-3 Bus Buffering and Latchingbull Demultiplexing the Buses

ndash addressdata busmultiplexed(shared) to reduce no of pins

ndash memory and IO require that address remains valid and stable throughout a read and write cycle

bull all computer systems have three busesndash address bus provided memory and IO with memory

address or IO port number

ndash data bus transferred data between micro and memory or IO

ndash control bus provided control signal to memory and IO

bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches

ndash pass inputs to outputs whenever ALE become 1

ndash after ALE return 0 remember inputs at time of change to 0

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 17: Microprocessor & Microcontrollers Module 2

17

Fig 9-5bull Fig 9-5

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 18: Microprocessor & Microcontrollers Module 2

18

9-3 Bus Buffering and Latching

bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3

ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)

ndash three 74LS373 transparent latches

bull The Buffered Systemndash micro system must be buffered if more than 10 unit load

are attached to any bus pin

ndash demultiplexed pins already buffered by 74LS373 latch

ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 19: Microprocessor & Microcontrollers Module 2

19

Fig 9-6bull Fig 9-6

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 20: Microprocessor & Microcontrollers Module 2

20

9-3 Bus Buffering and Latching

ndash fully buffered signal will introduce timing delay

ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus

bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer

ndash IOMrsquo RDrsquo WRrsquo 74LS244

ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer

ndash direction controlled by DTRrsquo enable by DENrsquo

bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245

ndash IOMrsquo RDrsquo WRrsquo 74LS244

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 21: Microprocessor & Microcontrollers Module 2

21

Minimum Mode

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 22: Microprocessor & Microcontrollers Module 2

22

Min Mode

bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1

bull All the control signals are given out by the microprocessor chip itself

bull There is a single microprocessor in the minimum mode system

bull The remaining components in the system are latches transreceivers clock generator memory and IO devices

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 23: Microprocessor & Microcontrollers Module 2

23

Min Mode ndash Latches

bull Latches are generally buffered output

bull D-type flip-flops like 74LS373 or 8282

bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 24: Microprocessor & Microcontrollers Module 2

24

Min Mode ndash Transreceivers

bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals

bull They are controlled by two signals namely DEN and DTRrsquo

bull DEN- Valid data available

bull DTRrsquo- Direction

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 25: Microprocessor & Microcontrollers Module 2

25

Maximum Mode

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 26: Microprocessor & Microcontrollers Module 2

Max mode

bull Multiprocessor coprocessor system environment

bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces

bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 27: Microprocessor & Microcontrollers Module 2

Max Mode

bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086

bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle

bull The basic function of the bus controller chip IC8288 is to derive control signals

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 28: Microprocessor & Microcontrollers Module 2

28

Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page

bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)

ndash these signal normally decoded by 8288 bus controller

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 29: Microprocessor & Microcontrollers Module 2

Coprocessor

bull There is a second processor in the system

bull In this two processor does not access the bus at the same time

bull One passes the control of the system bus to the other and then may suspend its operation

bull Intel 8087- Floating point coprocessor

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 30: Microprocessor & Microcontrollers Module 2

Coprocessor

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 31: Microprocessor & Microcontrollers Module 2

Coprocessor

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 32: Microprocessor & Microcontrollers Module 2

Multiprocessor

bull Each processor is executing its own program

bull Global resources Resources that are common to all processors

bull Local or Private resources Resources that are assigned to specific processors

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 33: Microprocessor & Microcontrollers Module 2

MEMORY DEVICESCIRCUITS AND

SUBSYSTEM DESIGN

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 34: Microprocessor & Microcontrollers Module 2

MEMORY DEVICES CIRCUITS AND SUBSYSTEM

DESIGN91 Program and Data Storage

92 Read-Only Memory

93 Random Access ReadWrite Memories

94 Parity the Parity Bit and Parity-

CheckerGenerator Circuit

95 FLASH Memory

96 Wait-State Circuitry

97 80888086 Microcomputer System Memory Circuitry

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 35: Microprocessor & Microcontrollers Module 2

Program and Data Storage

bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 36: Microprocessor & Microcontrollers Module 2

Program and Data Storage (cont)

bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature

ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes

bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 37: Microprocessor & Microcontrollers Module 2

Read-Only Memory

bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 38: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus

bull Chip enable (CE)

bull Output enable (OE)

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 39: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

EXAMPLEndash Suppose the block diagram in the previous slide had 15 address

lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity

Solutionndash With 8 data lines the number of bytes is equal to the number of

locations which is

215 = 32768 bytesndash This gives a total storage of

32768 x 8 = 262144 bits

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 40: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Read operation

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 41: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 42: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 43: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of

an EPROMbull Access time (tACC)

bull Chip-enable time (tCE)

bull Chip-deselect time (tDF)

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 44: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 45: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 46: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICsndash A complex series of program and verify operations are

performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-

Pulse Programming Algorithm and the Intelligent Programming Algorithm

ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 47: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs

Quick-Pulse Programming

Algorithm flowchart

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 48: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Standard EPROM ICs

Intelligent ProgrammingAlgorithm flowchart

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 49: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 50: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 51: Microprocessor & Microcontrollers Module 2

Read-Only Memory (cont)

bull Expanding EPROM word length and word capacity

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 52: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)

bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature

bull RAM is normally used to store temporary data and application programs for execution

ndash RAM is volatilebull If power is removed from RAM the stored data are lost

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 53: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories (cont)

bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the

power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power

supply turned on and periodically restore the data in each location

bull The recharging process is known as refreshing the DRAM

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 54: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories (cont)

bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs

are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are

controlled by the CE OE WE control signals

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 55: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories (cont)

bull A static RAM system

16K x 16-bit SRAM circuit

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 56: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 57: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories (cont)

bull Standard static RAM ICs

(a) 4365 pin layout (b) 43256A pin layout

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 58: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

DC electricalcharacteristics ofthe 4364

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 59: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 60: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull SRAM read and write cycle operation

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 61: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static

RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and

4M-bit devices 1048729

bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space

bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 62: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Standard DRAM devices

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 63: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 64: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

bull Standard dynamic RAM ICs

Block diagram of the 2164 DRAM

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 65: Microprocessor & Microcontrollers Module 2

Random Access ReadWrite Memories

64K x 16-bit DRAM circuit

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 66: Microprocessor & Microcontrollers Module 2

Parity the Parity Bit and Parity- CheckerGenerator Circuit

bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data

bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity

bull The parity-checkgenerator signals parity error to MPU by setting PE to zero

bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 67: Microprocessor & Microcontrollers Module 2

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Data-storage memory interface with parity-checker generator

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 68: Microprocessor & Microcontrollers Module 2

Parity the Parity Bit and Parity- CheckerGenerator Circuit

(a) Block diagram of the 74AS280 (b) Function table

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 69: Microprocessor & Microcontrollers Module 2

Parity the Parity Bit and Parity- CheckerGenerator Circuit

Even-parity checkergenerator connection

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 70: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm

bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory

either the complete memory array or a large block of storage location not just one byte is erased

ndash The erase process of FLASH memory is complex and can take as long as several seconds

bull The FLASH memories find their widest use in microcomputer systems for storage of firmware

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 71: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Block diagram of a FLASH memory

Block diagram of a FLASH memory

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 72: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Bulk-erase boot block and FlashFile FLASH memory

FLASH memory array architectures

Main blocks

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 73: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard bulk-erase FLASH memories

Standard bulk-erase FLASH memory devices

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 74: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is

the plastic leaded chip carrier or PLCC

Pin layout of the 28F020 Standard speedselection for the 28F020

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 75: Microprocessor & Microcontrollers Module 2

FLASH Memory

Quick-erase algorithmof the 28F020

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 76: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard bulk-erase FLASH memories

28F020 command definitions

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 77: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in

embedded microprocessor application

Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 78: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is

what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V

or 12-V value of Vpp 1048729

ndash The boot block devices can be organized with either 8-bit or 16-bit bus

Block diagram of the 28F00428F400

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 79: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block

bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)

Top and bottom boot block organization of the 28F004

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 80: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep

power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0

ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array

bull This is known as automatic erase and write

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 81: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memories

28F004 command bus definition

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 82: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memories

Status register bit definition

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 83: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard boot block FLASH memories

Erase operation flowchart and bus activity

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 84: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those

designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage

applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive

ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 85: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard FlashFile FLASH memories

Block diagram of the 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 86: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard FlashFile FLASH memories

Pin lay-out of the SSOP 28F016SASV

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 87: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull Standard FlashFile FLASH memories

Byte-wide mode memorymap of the 28F016SASV

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 88: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull FLASH packages

Source Micron Technology Inc

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 89: Microprocessor & Microcontrollers Module 2

FLASH Memory

bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 90: Microprocessor & Microcontrollers Module 2

Wait-State Circuitry

bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations

Wait-state generator circuit block diagram

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 91: Microprocessor & Microcontrollers Module 2

Wait-State Circuitry

Typical wait-state generator circuit

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 92: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitrybull Program storage memory 1048729

ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory

ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals

bull Each chip-select is applied to the CE (chip-enable) input of the EPROM

ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 93: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 94: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

Minimum-mode 8086 system memory interface

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 95: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

Maximum-mode 8088 system memory interface

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 96: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitrybull Data storage memory

ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729

ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729

ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 97: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitrybull EXAMPLE

ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 98: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 99: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitrybull SOLUTION

ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4

ndash To provide an 8-bit data bus two SRAMs must be connected in parallel

bull Two pairs connected in this way are then placed in series to implement the RW address range

bull Each pair implements 16Kbytes

ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2

bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 100: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

Memory map of the system

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 101: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

RAM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 102: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

ROM memory organization for the system design

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 103: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

Address range analysis for the design of chip select signals

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105
Page 104: Microprocessor & Microcontrollers Module 2

80888086 Microcomputer System

Memory Circuitry

Chip-select logic

  • MODULE 2
  • Introduction
  • Fig 9-1
  • Pin Connections
  • Slide 5
  • Slide 6
  • Slide 7
  • Slide 8
  • Slide 9
  • Minimum Mode Pins
  • Slide 11
  • Maximum Mode Pins
  • Slide 13
  • Slide 14
  • Fig 9-4
  • 9-3 Bus Buffering and Latching
  • Fig 9-5
  • Slide 18
  • Fig 9-6
  • Slide 20
  • Minimum Mode
  • Min Mode
  • Min Mode ndash Latches
  • Min Mode ndash Transreceivers
  • Maximum Mode
  • Max mode
  • Max Mode
  • Slide 28
  • Coprocessor
  • Slide 30
  • Coprocessor
  • Slide 32
  • Multiprocessor
  • MEMORY DEVICES CIRCUITS AND SUBSYSTEM DESIGN
  • Slide 35
  • Program and Data Storage
  • Program and Data Storage (cont)
  • Read-Only Memory
  • Read-Only Memory (cont)
  • Slide 40
  • Slide 41
  • Slide 42
  • Slide 43
  • Slide 44
  • Slide 45
  • Slide 46
  • Slide 47
  • Slide 48
  • Slide 49
  • Slide 50
  • Slide 51
  • Slide 52
  • Random Access ReadWrite Memories
  • Random Access ReadWrite Memories (cont)
  • Slide 55
  • Slide 56
  • Slide 57
  • Slide 58
  • Slide 59
  • Slide 60
  • Slide 61
  • Slide 62
  • Slide 63
  • Slide 64
  • Slide 65
  • Slide 66
  • Parity the Parity Bit and Parity- CheckerGenerator Circuit
  • Slide 68
  • Slide 69
  • Slide 70
  • FLASH Memory
  • Slide 72
  • Slide 73
  • Slide 74
  • Slide 75
  • Slide 76
  • Slide 77
  • Slide 78
  • Slide 79
  • Slide 80
  • Slide 81
  • Slide 82
  • Slide 83
  • Slide 84
  • Slide 85
  • Slide 86
  • Slide 87
  • Slide 88
  • Slide 89
  • Slide 90
  • Wait-State Circuitry
  • Slide 92
  • 80888086 Microcomputer System Memory Circuitry
  • Slide 94
  • Slide 95
  • Slide 96
  • Slide 97
  • Slide 98
  • Slide 99
  • Slide 100
  • Slide 101
  • Slide 102
  • Slide 103
  • Slide 104
  • Slide 105