MODULE 2 8086/8088 Hardware specifications
Dec 13, 2014
MODULE 2
80868088 Hardware specifications
2
Introduction
bull describe pin functions of both 8086 and 8088bull provide details
ndash clock generation bus buffering bus latching timing
ndash wait states minimum and maximum mode operation
bull Fig 9-1 Pin-outs of 80868088ndash 40-pin dual in-line packages(DIPs)
bull difference ndash data bus width rarr 8086 16 bit 8088 8 bit
ndash pin 28 rarr 8086 MIOrsquo 8088 IOMrsquo
ndash pin 34 rarr 8086 BHErsquoS7 8088 SS0
3
Fig 9-1bull Fig 9-1
4
Pin Connections
bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1
ndash data whenever ALE = 0
ndash high-impedance state during a hold acknowledge
bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge
bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1
ndash data bits D15-D8 whenever ALE = 0
ndash high-impedance state during a hold acknowledge
5
Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)
ndash memory address A19-A16 status bits S6-S3
ndash high-impedance state during a hold acknowledge
ndash S6 always remain a logic 0
ndash S5 indicate condition of IF flag bits
ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)
ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20
6
Pin Connectionsbull RDrsquo read signal
ndash data bus receive data from memory or IO device RDrsquo=0
ndash high-impedance state during a hold acknowledge
bull READY ndash micro enter into wait states and remain idle READY = 0
ndash no effect on the operation of micro READY = 1
bull INTR interrupt requestndash used to request a hardware interrupt
ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
2
Introduction
bull describe pin functions of both 8086 and 8088bull provide details
ndash clock generation bus buffering bus latching timing
ndash wait states minimum and maximum mode operation
bull Fig 9-1 Pin-outs of 80868088ndash 40-pin dual in-line packages(DIPs)
bull difference ndash data bus width rarr 8086 16 bit 8088 8 bit
ndash pin 28 rarr 8086 MIOrsquo 8088 IOMrsquo
ndash pin 34 rarr 8086 BHErsquoS7 8088 SS0
3
Fig 9-1bull Fig 9-1
4
Pin Connections
bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1
ndash data whenever ALE = 0
ndash high-impedance state during a hold acknowledge
bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge
bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1
ndash data bits D15-D8 whenever ALE = 0
ndash high-impedance state during a hold acknowledge
5
Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)
ndash memory address A19-A16 status bits S6-S3
ndash high-impedance state during a hold acknowledge
ndash S6 always remain a logic 0
ndash S5 indicate condition of IF flag bits
ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)
ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20
6
Pin Connectionsbull RDrsquo read signal
ndash data bus receive data from memory or IO device RDrsquo=0
ndash high-impedance state during a hold acknowledge
bull READY ndash micro enter into wait states and remain idle READY = 0
ndash no effect on the operation of micro READY = 1
bull INTR interrupt requestndash used to request a hardware interrupt
ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
3
Fig 9-1bull Fig 9-1
4
Pin Connections
bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1
ndash data whenever ALE = 0
ndash high-impedance state during a hold acknowledge
bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge
bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1
ndash data bits D15-D8 whenever ALE = 0
ndash high-impedance state during a hold acknowledge
5
Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)
ndash memory address A19-A16 status bits S6-S3
ndash high-impedance state during a hold acknowledge
ndash S6 always remain a logic 0
ndash S5 indicate condition of IF flag bits
ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)
ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20
6
Pin Connectionsbull RDrsquo read signal
ndash data bus receive data from memory or IO device RDrsquo=0
ndash high-impedance state during a hold acknowledge
bull READY ndash micro enter into wait states and remain idle READY = 0
ndash no effect on the operation of micro READY = 1
bull INTR interrupt requestndash used to request a hardware interrupt
ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
4
Pin Connections
bull AD7-AD0 addressdata bus(multiplexed)ndash memory address or IO port no whenever ALE = 1
ndash data whenever ALE = 0
ndash high-impedance state during a hold acknowledge
bull A15-A8 8088 address busndash high-impedance state during a hold acknowledge
bull AD15-AD8 addressdata bus(multiplexed)ndash memory address bits A15-A8 whenever ALE = 1
ndash data bits D15-D8 whenever ALE = 0
ndash high-impedance state during a hold acknowledge
5
Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)
ndash memory address A19-A16 status bits S6-S3
ndash high-impedance state during a hold acknowledge
ndash S6 always remain a logic 0
ndash S5 indicate condition of IF flag bits
ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)
ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20
6
Pin Connectionsbull RDrsquo read signal
ndash data bus receive data from memory or IO device RDrsquo=0
ndash high-impedance state during a hold acknowledge
bull READY ndash micro enter into wait states and remain idle READY = 0
ndash no effect on the operation of micro READY = 1
bull INTR interrupt requestndash used to request a hardware interrupt
ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
5
Pin Connectionsbull A19S6-A16S3 addressstatus bus(multiplexed)
ndash memory address A19-A16 status bits S6-S3
ndash high-impedance state during a hold acknowledge
ndash S6 always remain a logic 0
ndash S5 indicate condition of IF flag bits
ndash S4 S3 show which segment is accessed during current bus cycle(Table 9-4)
ndash S4 S3 can used to address four separate 1M byte memory banks by decoding them as A21 A20
6
Pin Connectionsbull RDrsquo read signal
ndash data bus receive data from memory or IO device RDrsquo=0
ndash high-impedance state during a hold acknowledge
bull READY ndash micro enter into wait states and remain idle READY = 0
ndash no effect on the operation of micro READY = 1
bull INTR interrupt requestndash used to request a hardware interrupt
ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
6
Pin Connectionsbull RDrsquo read signal
ndash data bus receive data from memory or IO device RDrsquo=0
ndash high-impedance state during a hold acknowledge
bull READY ndash micro enter into wait states and remain idle READY = 0
ndash no effect on the operation of micro READY = 1
bull INTR interrupt requestndash used to request a hardware interrupt
ndash if INTR is held high when IF = 1 micro enter interrupt acknowledge cycle(INTArsquo become active) after current instruction has complete execution
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
7
Pin Connectionsbull TESTrsquo(BUSYrsquo) tested by the WAIT instruction
ndash WAIT instruction function as a NOP if TESTrsquo= 0
ndash WAIT instruction wait for TESTrsquo to become 0if TESTrsquo=1
bull NMI non-maskable interruptndash similar to INTR except that no check IF flag bit
ndash if NMI is activated use interrupt vector 2
bull RESET ndash micro reset if RESET held high for a minimum of four clock
bull CLK(CLOCK) provide basic timing to microndash duty cycle of 33
bull VCC(power supply) +50V plusmn10
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
8
Pin Connectionsbull GND(Ground) two pins labeled GND
bull MNMXrsquo select either minimum or maximum mode bull BHErsquoS7 bus high enable
ndash enable the most significant data bus bits(D15-D8) during read or write operation
ndash status of S7 always a logic 1
bull Minimum Mode Pins MN = 1(directly to +50V) next p
bull IOMrsquo(8088) or MIOrsquo(8086) select memory or IO
ndash address bus whether memory or IO port address
bull WRrsquo write signal(high impedance state during hold ack)
ndash strobe that indicate that output data to memory or IO
ndash during WRrsquo=0 data bus contains valid data for M or IO
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
9
Fig 9-1bull Fig 9-1
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
10
Minimum Mode Pinsbull INTArsquo(interrupt acknowledge) response to INTR input pin
ndash normally used to gate interrupt vector no onto data bus
bull ALE(address latch enable) does not float during hold ack
ndash addressdata bus contain address information
bull DTRrsquo(data transmitreceive)
ndash data bus transmit(DTRrsquo=1) or receive(DTRrsquo=0) data
ndash used to enable external data bus buffers
bull DEN(data bus enable) activate external data bus buffers
bull HOLD request a direct memory access(DMA)ndash if HOLD=1 micro stops executing software and places
address data and control bus at high-impedance state
ndash HOLD=0 micro execute software normally
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
11
Minimum Mode Pinsbull HOLDA(hold acknowledge)indicate micro has entered hold state
bull SS0rsquo equivalent to S0 pin in maximum mode operation
ndash combined with IOMrsquo DTRrsquo to decode function of current bus cycle(Table 9-5)
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
12
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
13
Fig 9-1bull Fig 9-1
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
14
Maximum Mode Pinsbull R1rsquoGT1rsquo R0rsquoGT0rsquo(requestgrant) request DMA
ndash bi-directional request and grant DMA operation
bull LOCKrsquo(lock output) used to lock peripherals off the system
ndash activated by using the LOCK prefix on any instruction
bull QS1 QS0(queue status)
ndash show status of internal instruction queue Table 9-7
ndash provided for access by the numeric coprocessor(8087)
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
15
Fig 9-4bull Fig 9-4
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
16
9-3 Bus Buffering and Latchingbull Demultiplexing the Buses
ndash addressdata busmultiplexed(shared) to reduce no of pins
ndash memory and IO require that address remains valid and stable throughout a read and write cycle
bull all computer systems have three busesndash address bus provided memory and IO with memory
address or IO port number
ndash data bus transferred data between micro and memory or IO
ndash control bus provided control signal to memory and IO
bull Demultiplexing the 8088 Fig 9-5ndash two 74LS373 transparent latches
ndash pass inputs to outputs whenever ALE become 1
ndash after ALE return 0 remember inputs at time of change to 0
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
17
Fig 9-5bull Fig 9-5
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
18
9-3 Bus Buffering and Latching
bull Demultiplexing the 8086 Fig 9-6ndash demultiplexing AD15-AD0 A19S6-A16S3 BHErsquoS3
ndash 3 buses address(A19-A0 BHErsquo) data(D15-D0) control(MIOrsquo RDrsquoWRrsquo)
ndash three 74LS373 transparent latches
bull The Buffered Systemndash micro system must be buffered if more than 10 unit load
are attached to any bus pin
ndash demultiplexed pins already buffered by 74LS373 latch
ndash bufferrsquos output currents increased 32mA of sink current(0) 52mA of source current(1)
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
19
Fig 9-6bull Fig 9-6
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
20
9-3 Bus Buffering and Latching
ndash fully buffered signal will introduce timing delay
ndash cause no difficulty unless memory and IO devices are used which function at near maximum speed of bus
bull The fully Buffered 8088 Fig 9-7ndash 8 address A15-A8 74LS244 octal buffer
ndash IOMrsquo RDrsquo WRrsquo 74LS244
ndash 8 data D7-D0 74LS245 octal bi-directional bus buffer
ndash direction controlled by DTRrsquo enable by DENrsquo
bull The fully Buffered 8086 Fig 9-8ndash data bus two 74LS245
ndash IOMrsquo RDrsquo WRrsquo 74LS244
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
21
Minimum Mode
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
22
Min Mode
bull 8086 is operated in minimum mode by strapping its MNMX pin to logic 1
bull All the control signals are given out by the microprocessor chip itself
bull There is a single microprocessor in the minimum mode system
bull The remaining components in the system are latches transreceivers clock generator memory and IO devices
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
23
Min Mode ndash Latches
bull Latches are generally buffered output
bull D-type flip-flops like 74LS373 or 8282
bull They are used for separating the valid address from the multiplexed addressdata signals and are controlled by the ALE signal generated by 8086
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
24
Min Mode ndash Transreceivers
bull Transreceivers are the bidirectional buffers and some times they are called as data amplifiers They are required to separate the valid data from the time multiplexed addressdata signals
bull They are controlled by two signals namely DEN and DTRrsquo
bull DEN- Valid data available
bull DTRrsquo- Direction
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
25
Maximum Mode
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Max mode
bull Multiprocessor coprocessor system environment
bull 8086 does not directly provide all the signals that are required to control the memory IO and interrupt interfaces
bull 8086 is operated in minimum mode by strapping its MNMXrsquo pin to logic 0
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Max Mode
bull Specially the WR MIO DTR DEN ALE and INTA signals are no longer produced by the 8086
bull Instead it outputs three status signals S0 S1 S2 prior to the initiation of each bus cycle
bull The basic function of the bus controller chip IC8288 is to derive control signals
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
28
Maximum Mode Pinsbull MNMXrsquo = 0(ground) next page
bull S2rsquoS1rsquoS0rsquoindicate function of current bus cycle(T 9-6)
ndash these signal normally decoded by 8288 bus controller
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Coprocessor
bull There is a second processor in the system
bull In this two processor does not access the bus at the same time
bull One passes the control of the system bus to the other and then may suspend its operation
bull Intel 8087- Floating point coprocessor
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Coprocessor
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Coprocessor
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Multiprocessor
bull Each processor is executing its own program
bull Global resources Resources that are common to all processors
bull Local or Private resources Resources that are assigned to specific processors
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
MEMORY DEVICESCIRCUITS AND
SUBSYSTEM DESIGN
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
MEMORY DEVICES CIRCUITS AND SUBSYSTEM
DESIGN91 Program and Data Storage
92 Read-Only Memory
93 Random Access ReadWrite Memories
94 Parity the Parity Bit and Parity-
CheckerGenerator Circuit
95 FLASH Memory
96 Wait-State Circuitry
97 80888086 Microcomputer System Memory Circuitry
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Program and Data Storage
bull The memory unit of a microcomputer is partitioned into a primary storage section and secondary storage section
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Program and Data Storage (cont)
bull The basic inputoutput system (BIOS) are programs held in ROMndash They are called firmware because of their permanent nature
ndash The typical size of a BIOS ROM used in a PC today is 256 Kbytes
bull Programs are normally read in from the secondary memory storage device stored in the program storage part of memory and then run
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory
bull ROM PROM and EPROMndash Mask-programmable read-only memory (ROM)ndash One-time-programmable read-only memory (PROM)ndash Erasable read-only memory (EPROM)
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Block diagram of a read-only memory 1048729Address busndash Data busndash Control bus
bull Chip enable (CE)
bull Output enable (OE)
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
EXAMPLEndash Suppose the block diagram in the previous slide had 15 address
lines and eight data lines How many bytes of information can be stored in the ROM What is its total storage capacity
Solutionndash With 8 data lines the number of bytes is equal to the number of
locations which is
215 = 32768 bytesndash This gives a total storage of
32768 x 8 = 262144 bits
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Read operation
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs ndash A short delay exists between address inputs and data outputsndash Three important timing properties defined for the read cycle of
an EPROMbull Access time (tACC)
bull Chip-enable time (tCE)
bull Chip-deselect time (tDF)
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICsndash A complex series of program and verify operations are
performed to program each storage location in an EPROMndash The two widely used programming sequences are the Quick-
Pulse Programming Algorithm and the Intelligent Programming Algorithm
ndash CMOS EPROMs are designed to provide TTL-compatible input and output logic level
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs
Quick-Pulse Programming
Algorithm flowchart
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Standard EPROM ICs
Intelligent ProgrammingAlgorithm flowchart
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Read-Only Memory (cont)
bull Expanding EPROM word length and word capacity
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull The memory section of a microcomputer system is normally formed from both read-only memories and random access readwrite memories (RAM)
bull RAM is different from ROM in two waysndash Data stored in RAM is not permanent in nature
bull RAM is normally used to store temporary data and application programs for execution
ndash RAM is volatilebull If power is removed from RAM the stored data are lost
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories (cont)
bull Static and dynamic RAMsndash For a static RAM (SRAM) data remain valid as long as the
power supply is not turned offndash For a dynamic RAM (DRAM) we must both keep the power
supply turned on and periodically restore the data in each location
bull The recharging process is known as refreshing the DRAM
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories (cont)
bull Block diagram of a static RAMndash The most commonly used densities in RAM IC system designs
are the 64KB and 256KB devicesndash The data lines are bidirectional and the readwrite operations are
controlled by the CE OE WE control signals
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories (cont)
bull A static RAM system
16K x 16-bit SRAM circuit
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories (cont)
bull Standard static RAM ICs
(a) 4365 pin layout (b) 43256A pin layout
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
DC electricalcharacteristics ofthe 4364
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull SRAM read and write cycle operation
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs 1048729ndash Dynamic RAMs are available in higher densities than static
RAMsbull The most widely used DRAMs are the 64K-bit 256K-bit 1M-bit and
4M-bit devices 1048729
bull Benefits of using DRAMs over SRAMs arendash Cost lessndash Consume less powerndash The 16- and 18-pin package take up less space
bull To maintain the data in a DRAM each of the rows of the storage array must typically be refreshed periodically such as every 2 ms
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Standard DRAM devices
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
(a) 2164B pin layout (b) 21256 pin layout (c) 421000 pin layout
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
bull Standard dynamic RAM ICs
Block diagram of the 2164 DRAM
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Random Access ReadWrite Memories
64K x 16-bit DRAM circuit
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Parity the Parity Bit and Parity- CheckerGenerator Circuit
bull To improve the reliability of information transfer between the MPU and memory a parity bit can be added to each byte of data
bull The parity-checkergenerator circuit can be set up to produce either even parity or odd parity
bull The parity-checkgenerator signals parity error to MPU by setting PE to zero
bull In a 16-bit microcomputer system there are normally two 8-bit banks of DRAM ICs in the data-storage memory arrayndash A parity bit DRAM is added to each bank
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Data-storage memory interface with parity-checker generator
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Parity the Parity Bit and Parity- CheckerGenerator Circuit
(a) Block diagram of the 74AS280 (b) Function table
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Parity the Parity Bit and Parity- CheckerGenerator Circuit
Even-parity checkergenerator connection
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Flash memory devices are similar to EPROMsndash They are nonvolatilendash They are read like an EPROMndash They program with an EPROM-like algorithm
bull The key difference between a FLASH memory and an EPROM is that its memory cells are erased electrically instead of by exposure to ultraviolet lightndash When an erase operation is performed on a FLASH memory
either the complete memory array or a large block of storage location not just one byte is erased
ndash The erase process of FLASH memory is complex and can take as long as several seconds
bull The FLASH memories find their widest use in microcomputer systems for storage of firmware
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Block diagram of a FLASH memory
Block diagram of a FLASH memory
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Bulk-erase boot block and FlashFile FLASH memory
FLASH memory array architectures
Main blocks
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard bulk-erase FLASH memories
Standard bulk-erase FLASH memory devices
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard bulk-erase FLASH memoriesndash The most popular package for housing FLASH memory ICs is
the plastic leaded chip carrier or PLCC
Pin layout of the 28F020 Standard speedselection for the 28F020
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
Quick-erase algorithmof the 28F020
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard bulk-erase FLASH memories
28F020 command definitions
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memoriesndash The boot block FLASH memories are designed for used in
embedded microprocessor application
Pin-layout comparison of the TSOP 28F002 28F004 and 28F008 IC
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memoriesndash One of the important features of boot block FLASH memory is
what is known as SmartVoltagebull This capability enables the device to be programmed with either a 5-V
or 12-V value of Vpp 1048729
ndash The boot block devices can be organized with either 8-bit or 16-bit bus
Block diagram of the 28F00428F400
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memoriesndash Another new feature is that of a hardware-lockable block
bull In the 28F00428F400 the 16Kbyte boot block can be locked by applying logic 0 to the write protected input (WP)
Top and bottom boot block organization of the 28F004
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memories 1048729ndash If the 28F400 device is not in use it can be put into the deep
power-down mode to conserve power by switch RP (ResetDeep power-down) input to logic 0
ndash The 28F00428F400 uses a command user interface (CUI) status register and write-state machine to initiate an internally implemented and highly automated method of erasing and programming the blocks of the storage array
bull This is known as automatic erase and write
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memories
28F004 command bus definition
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memories
Status register bit definition
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard boot block FLASH memories
Erase operation flowchart and bus activity
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard FlashFile FLASH memories ndash The highest-density FLASH memories available today are those
designed with the FlashFile architecture ndash FlashFile memories are intended for use in largecode storage
applications and to implement solidstate mass-storage devices such as the FLASH card and FLASH drive
ndash The FlashFile memories support block lockingbull The blocks are independently programmable as locked or unlocked
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard FlashFile FLASH memories
Block diagram of the 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard FlashFile FLASH memories
Pin lay-out of the SSOP 28F016SASV
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull Standard FlashFile FLASH memories
Byte-wide mode memorymap of the 28F016SASV
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull FLASH packages
Source Micron Technology Inc
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
FLASH Memory
bull FLASH memory applications 1048729ndash Digital cellular phones 1048729ndash PDAs 1048729ndash Digital cameras 1048729ndash LAN switches 1048729ndash Digital set-top boxes 1048729ndash Embedded controllers 1048729ndash BIOS 1048729ndash FLASH disk
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Wait-State Circuitry
bull Depending on the access time of the memory devices used and the clock rate of the MPU a number of wait states may need to be inserted into external memory read and write operations
Wait-state generator circuit block diagram
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
Wait-State Circuitry
Typical wait-state generator circuit
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitrybull Program storage memory 1048729
ndash Attaching several EPROM devices to the system bus expands the capacity of program storage memory
ndash High-order bits of the 8088rsquos address are decoded to produce chip-select signals
bull Each chip-select is applied to the CE (chip-enable) input of the EPROM
ndash In the maximum-mode circuit the 8288 bus controller rather than the 8088 produces the control signals for the address latches and data bus transceiver
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
Minimum-mode 8086 system memory interface
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
Maximum-mode 8088 system memory interface
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitrybull Data storage memory
ndash Information that frequently changes is normally implemented with random access readwrite memory (RAM) 1048729
ndash If the amount of memory required in the microcomputer is small the memory subsystem is usually designed with SRAMs 1048729
ndash DRAMs require refresh support circuit which is not warranted if storage requirement are small
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitrybull EXAMPLE
ndash Design a memory system consisting of 32Kbytes of RW memory and 32Kbytes of ROM memory Use SRAM devices to implement RW memory and EPROM devices to implement ROM memory The memory devices to be used are shown below RW memory is to reside over the address range 0000016 through 07FFF16 and the address range of ROM memory is to be F800016 through FFFFF16 Assume that the 8088 microprocessor system bus signals that follow are available for use A0 through A19 D0 through D7 MEMR MEMW
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitrybull SOLUTION
ndash First let us determine the number of SRAM devices neededbull No of SRAM devices = 32Kbyte(16K x 4) = 4
ndash To provide an 8-bit data bus two SRAMs must be connected in parallel
bull Two pairs connected in this way are then placed in series to implement the RW address range
bull Each pair implements 16Kbytes
ndash Next let us determine the number of EPROM devices neededbull No of EPROM devices = 32Kbyte16Kbyte = 2
bull These two devices must be connected in series to implement the ROM address range and each implement 16Kbytes of storage
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
Memory map of the system
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
RAM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
ROM memory organization for the system design
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
Address range analysis for the design of chip select signals
80888086 Microcomputer System
Memory Circuitry
Chip-select logic
80888086 Microcomputer System
Memory Circuitry
Chip-select logic