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IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IEEE
ELECTRON DEVICES SOCIETY EDS
LECTRONEVICESOCIETY
July 2004 Vol. 11, No. 3 ISSN:1074 1879 Editor-in-Chief:
Ninoslav D. Stojadinovic
Your Comments SolicitedYour comments are most welcome. Please
writedirectly to the Editor-in-Chief of the Newsletter at
[email protected]
The 30th Annual IEEE International SOI Conference, the premier
confer-ence dedicated to current trends in Silicon-on-Insulator
technology, will beheld October 4 – 7, 2004 at the Francis Marion
Hotel, Charleston, SouthCarolina. A one-day Tutorial Short Course
will precede the conference onMonday, 4 October.
The SOI conference was established with the support of IEEE to
pro-vide a forum for open discussion in all areas of
silicon-on-insulator tech-nologies and their applications. Ever
increasing demand andmodifications in this technology bring the
industry together to discussnew accomplishments and gains. Original
papers presenting new devel-opments in the industry will be
presented at the conference.
The 2004 SOI International Conference will begin with a half-day
ple-nary session followed by two days of oral sessions, a poster
session anda late news session. A Best Paper Award will be
presented at the closingon Thursday. Session topics will focus on
basic materials research,device research, circuit development
(special and improved) and applica-tions and uses. Rump sessions
will be held on Wednesday evening,October 6. These sessions
encourage attendees to share their opinionsand expertise on the
chosen topics of discussion.
Additionally, a materials and equipment exhibition relating to
SOItechnology will be held concurrently with the conference.
Participantswill have the opportunity to visit the exhibit area to
see what’s new inSOI. Overall, the 2004 SOI International
Conference offers attendees abroad spectrum of information,
opportunities for discussion with one’speers, and is a must for
engineers with direct involvement or partialinvolvement in SOI.
The 2004 SOI Conference seeks papers on a wide range of SOI
tech-nology including:
Table of ContentsUpcoming Technical
Meetings...................1
• 2004 SOI • 2004 BCTM• 2004 NVSMW • 2004 IRW
Message from the EDS President.....................3Message from
the EDS Newsletter
Editor-in-Chief ...........................................3
Society
News......................................................8•
Announcement of Newly Elected EDS
AdCom Members • EDS Administrative Committee Election
Process • Call for Nominations – EDS AdCom• Call for EDS Chapter
Subsidies for 2005• EDS Standing Committee Reports –
Regions/Chapters and Membership• EDS Technical Committee Reports
–
Photovoltaic Devices and VLSI Technologyand Circuits
• Compound Semiconductor Roadmap• Congratulations to the EDS
Members Elected
to the National Academy of Engineering (NAE) • Status Report
from the 2003 EDS Graduate
Student Fellowship Winners• Congratulations to the EDS Members
Recently
Elected to IEEE Senior Member Grade• Call for Nominations for
the EDS Chapter of
the Year Award• IEDM Short Courses on Videotape
Regional & Chapter News ...........................17
EDS Meetings Calendar ...............................27
EDS Distinguished Lecturer/Chapter Partner Visits South Africa
.................28
continued on page 6
2004 IEEE International
SOI Conference (SOI)
2004 IEEE International
SOI Conference (SOI)
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2 IEEE Electron Devices Society Newsletter m July 2004
PresidentHiroshi IwaiTokyo Institute of TechnologyE-Mail:
[email protected]
President-ElectIlesanmi AdesidaUniversity of IllinoisE-Mail:
[email protected]
TreasurerPaul K. L. YuUniversity of California at San
DiegoE-Mail: [email protected]
SecretaryJohn K. LowellConsultantE-Mail: [email protected]
Jr. Past PresidentSteven J. HilleniusAgere SystemsE-Mail:
[email protected]
Sr. Past PresidentCary Y. YangSanta Clara UniversityE-Mail:
[email protected]
VP of Awards Alfred U. Mac RaeMac Rae TechnologiesE-Mail:
[email protected]
VP of Educational Activities Ilesanmi AdesidaUniversity of
IllinoisE-Mail: [email protected]
VP of Meetings Kenneth F. GallowayVanderbilt UniversityE-Mail:
[email protected]
VP of Membership James B. KuoNational Taiwan UniversityE-Mail:
[email protected]
VP of Publications Renuka P. JindalUniversity of Louisiana at
LafayetteE-Mail: [email protected]
VP of Regions/Chapters Cor L. ClaeysIMECE-Mail:
[email protected]
VP of Technical ActivitiesMark E. LawUniversity of
FloridaE-Mail: [email protected]
IEEE NewslettersPaul DotoIEEE Operations CenterE-Mail:
[email protected]
Executive DirectorWilliam F. Van Der VortIEEE Operations
CenterE-Mail: [email protected]
Business AdministratorChristopher SaliccoIEEE Operations
CenterEmail: [email protected]
IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is
published quarterly by the Electron Devices Society of the
Institute of Electrical and ElectronicsEngineers, Inc.
Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997.
Printed in the U.S.A. One dollar ($1.00) per member per year is
included inthe Society fee for each member of the Electron Devices
Society. Periodicals postage paid at New York, NY and at additional
mailing offices. Postmaster: Sendaddress changes to IEEE Electron
Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331,
Piscataway, NJ 08855-1331.
Copyright © 2004 by IEEE: Information contained in this
Newsletter may be copied without permission provided that copies
are not used or distributed fordirect commercial advantage, and the
title of the publication and its date appear on each photocopy.
EDS AdComElected Members-at-Large
(Elected for a three-year term (maximum two terms) with ‘full’
voting privileges)
2004 Term 2005 Term 2006 Term
M. Estrada del Cueto (1) C.L. Claeys (2) S.S. Chung (1)K. F.
Galloway (2) J.A. Dayton, Jr. (2) T. Hiramoto (2)S. J. Hillenius
(2) M. Fukuma (2) L.M. Lunardi (2)C. Jagadish (2) F.J.
Garcia-Sanchez (1) M. Lundstrom (1)J. K. O. Sin (1) K. Lee (2) A.
Wang (1)R. Singh (2) J.J. Liou (1) H.S.P. Wong (2)N.D. Stojadinovic
(1) M. Ostling (2) X. Zhou (1)
D.L. Pulfrey (2)
ELECTRON DEVICES
SOCIETY
ELECTRON DEVICES
SOCIETY
CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME
Readers are encouraged to submit news items concerning the
Societyand its members. Please send your ideas/articles directly to
either the Edi-tor-in-Chief or appropriate Editor. The e-mail
addresses of these individu-als are listed on this page. Whenever
possible, e-mail is the preferredform of submission.
Newsletter DeadlinesIssue Due Date
January October 1stApril January 1stJuly April 1stOctober July
1st
REGIONS 1-6, 7 & 9Eastern, Northeastern & South-eastern
USA (Regions 1, 2 & 3)Murty S. PolavarapuBAE SystemsE-Mail:
[email protected]
Central USA & Canada (Regions 4& 7)Arokia
NathanUniversity of WaterlooE-Mail: [email protected]
Southwestern & Western USA (Regions 5 & 6)Sunit
TyagiIntelE-Mail: [email protected]
Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon
BolivarE-Mail: [email protected]
REGION 8Eastern Europe & The FormerSoviet UnionAlexander V.
GridchinNovosibirsk State Technical Uni-versityE-mail:
[email protected]
Scandinavia & Central EuropeAndrzej NapieralskiTechnical
University of LodzE-Mail: [email protected]
UK, Middle East & AfricaGady GolanThe Open UniversityE-Mail:
[email protected]
Western EuropeCora SalmUniversity of TwenteE-Mail:
[email protected]
REGION 10Australia, New Zealand & SouthAsiaXing ZhouNanyang
Technological UniversityE-Mail: [email protected]
Northeast AsiaHisayo Sasaki MomoseToshiba
CorporationE-Mail:[email protected]
East AsiaHei WongCity University of Hong KongE-Mail:
[email protected]
Editor-In-Chief
Ninoslav D. StojadinovicUniversity of NisE-Mail:
[email protected]
NEWSLETTER
EDITORIAL STAFF
NEWSLETTER
EDITORIAL STAFF
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July 2004 m IEEE Electron Devices Society Newsletter 3
Message from the EDS PresidentMessage from the EDS PresidentAs
the first Presi-dent elected from aregion outside theU.S., it is a
greathonor and privilegeto serve as thePresident of theElectron
DevicesSociety. My term isstarting at a time
when the globalization activities of theSociety are extremely
intense and alsowhen the financial situation of the Soci-ety has
started to recover, thanks to thegreat effort of the Society
members.
The importance of Electron Devicesfor the world is increasing
more thanever, as it has played an indispensablerole for providing
us with intelligentservices through the recent tremen-dous progress
made by ElectronDevices, including the internet, cellularphones,
digital electronic appliances,video game machines, GPS naviga-tions
and industrial and entertainmentrobots. In the near future,
ElectronDevices are expected to contributemore significantly by
substitutingsome of our intelligent labors with ahuman’s
sensitivity and machine accu-racy. For example, automatic
simulta-neous interpretation, automatic elderlycare, and automatic
surgery opera-tions could be realized in 20 years. Weare proud that
our Society is partici-pating in such important activities insuch
an exciting period, and we wishto contribute to the progress of
Elec-tron Devices as much as we can.
At the February IEEE TAB Meeting
series, we held the second EDS strate-gic planning meeting to
discuss howthe Society can better serve the cur-rent members and
attract futurepotential members. In order for EDS tobe more
flexible in its ability torespond quickly to technical shifts inthe
community and to allow the tech-nical committees to have more
lever-age in influencing the Society’sdirections, we will make the
Technicaland Meetings committees create con-crete action items and
discuss them atthe coming 2004 May AdCom Meetingseries. Although
there are an enor-mous number of industrial people inthe world
participating in ElectronDevices development, manufacturing,and
application, only a small portionof these individuals are members
ofthe Society. To promote the participa-tion of industrial people,
the IndustrialRelations Adhoc Committee wasfounded and is working
on a plan ofaction. Education is another importantrole of the
Society, and the Distin-guished Lecturer (DL) Program is oneof the
most attractive programs for themembers. We are planning to
enhancethe DL Program by significantlyincreasing the number of
lecturers,increasing the DL budget and having astrong collaboration
between the Edu-cational Activities and theRegions/Chapters
committees. Thenumber of Electron Devices engineersand scientists
are increasing veryrapidly in the non-US Regions such asAsia. In
order to take advantage of theopportunity, the Regions/Chapters
and
the Membership committees will worktogether to promote
membership.
We are planning to make EDSmembership more useful and
attrac-tive to the members. It is planned thatan archival DVD set,
which will includeall issues and years of Transactions onElectron
Devices (T-ED), and ElectronDevice Letters (EDL), and all
publisheddigests of the International ElectronDevices Meeting
(IEDM), will be madeavailable to our members in Decemberat the IEDM
for a very reasonableprice. EDS plans to work closely withits
flagship conference, the IEDM, toencourage and increase the
studentand industry participation for both theIEDM and EDS. We
recognize that allthe activities of the Society are accom-plished
by the devotion of the volun-teers of the Society; and as a
result,EDS plans to increase the number ofcertificates of
appreciation it issues toits contributors. These proposals willbe
further discussed at the May 2004EDS AdCom Series and we will
estab-lish a schedule for implementation.
I will report back to the member-ship on the progress of the
Societygoals in future communications. Iwould like to encourage you
all tothink about ways that we canenhance these programs and let
meknow how the Society can betterserve you each individually.
Hiroshi IwaiEDS President
Tokyo Institute of TechnologyYokohama, Japan
Hiroshi Iwai
After six years of distinguished service,Prof. Christian Zardini
has departedfrom the Editorial Board this year. I amtaking this
opportunity to thank Christ-ian for his dedicated service to
theNewsletter as a Region 8 Editor.Replacing Prof. Zardini is Dr.
CoraSalm from the University of Twente,The Netherlands, whose
biographyfollows. Cora has a lot of experience inEDS related
activities, and it is mypleasure to welcome her as the newRegion 8
Newsletter Editor for West-ern Europe.
Cora Salm received M.Sc. degree
in applied physicsin 1993, and Ph.D.degree in
electricalengineering in1997, both fromthe University ofTwente. She
is cur-rently an AssistantProfessor at theMESA Research
Institute, University of Twente. Herpast research interests
include electri-cal characterization of deep-submi-cron MOS
devices, integration ofpoly-SiGe in existing process flow,
and polycrystalline GeSi for advancedCMOS technologies. Her
recentresearch mainly focuses on reliabil-ity issues of advanced
semiconduc-tor devices, such as gate-dielectricintegrity, stresses
in metallizationfilms, and electrostatic discharge.Dr. Salm is a
Member of IEEE and areviewer for IEEE Electron DeviceLetters.
Ninoslav D. StojadinovicEDS Newsletter Editor-in-Chief
University of NisSertbia and Montengro
Message from the Editor-in-Chief
Cora Salm
Message from the Editor-in-Chief
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4 IEEE Electron Devices Society Newsletter m July 2004
Upcoming Technical MeetingsUpcoming Technical Meetings
The 2004 IEEE Non-VolatileSemiconductor Memory Work-shop (NVSMW)
wil l be heldAugust 22 - 26, 2004 in Mon-terey, California. The
IEEE Elec-tron Devices Society sponsorsthe workshop. NVSMW is
aunique forum for both special-ists in all aspects of
nonvolatilememory microelectronics andnovices wanting to gain a
broad-er understanding of the field.Attendees represent
profession-al and academic researchersinvolved with
semiconductornon-volatile memory develop-ment and production along
withend users of memory products.Principal topics for discussion
atNVSMW are: device physics; siliconprocessing; product testing;
newtechnologies, including multi-level-cell approaches;
programmable log-ic; memory cell design; integratedcircuits; solid
state disks and memo-ry cards; memory reliability; andnew
applications.
An important goal of NVSMW isto provide an informal
environmentto encourage discussions amongparticipants and lively
interactions.There will be morning and after-noon technical
sessions, along witha lively evening panel discussion ona hot topic
in the nonvolatile memo-ry f ield. Technical interact ionamong
presenters and attendees isencouraged through question andanswer
sessions and allotting ampletime after the formal paper
presen-tations for further in-depth discus-sions. Organized breaks,
includingsnacks and the workshop dinnerand lunch are provided as
opportu-nities to meet and exchange ideaswith colleagues.
Breakfasts are alsoprovided. The morning and after-noon technical
sessions are orga-nized in a manner to provide ampletime for the
informal exchange andto enjoy the beauty of the Montereypeninsula
region of California.
This year will be the 20th meet-
ing of NVSMW. The workshop isheld every 18 months,
alternatingbetween February and August. TheFebruary meeting is
usually heldthe week after ISSCC. The 2004meeting will be held in
the fourthweek of August. Early workshopsalternated between
Monterey, Cali-fornia for the February meeting andVail, Colorado
for the August meet-ing. The Vail venue was dropped anumber of
years ago, to facilitateattendance and travel f rom thenearby
Silicon Valley. For manyyears, the attendance for the work-shop was
around 100. In recentyears, however, the attendance hasgrown
considerably, reflecting thelarge growth in the Non-volatilememory
market, particularly flashmemory and embedded memory onlogic cores,
with the attendance atthe last several workshops beingwell in
excess of 200. In order tomaintain the workshop atmosphereof the
forum, the maximum atten-dance is limited to 300. Therefore,advance
registration is highly rec-ommended. A wide internationalcommunity
attends NVSMW fromNorth America, Europe, Japan andother Asian
countries. The past sev-eral workshops have had featuredsessions to
address the growth ofsegments of the memory market.
The last workshop, in 2003,featured the keynote speech
pre-sented by Dr. Herman Maes ofIMEC, on Silicon Scaling and
ItsConsequences for Memory Tech-nology. There were two
invitedpapers. One of the invited papersby Al Fazio of Intel
discussed theTechnology and Appl icat ionsrelated to 0.13um Logic +
Flash.Another invi ted paper by Dr .Josef Wi l ler of Ingent ix d
is -cussed recent developments ofNi t r ide-Storage Memories .
Athird invited paper, presented byRadu Andrei of Web feetResearch,
discussed a competi-t ive assessment of Advanced
Nonvolatile technologies, as com-pared to convent ional F loat
ingGate NVM technologies. There wasa panel discussion, moderated
byAlan Niebel of Web feet Research,which examined packaging andtest
developments for System-In-Package Technologies. In addition,there
were paper sessions onDesign and Applications of NVM,Nitride
Storage technologies, Relia-bility, Integration &
Characteriza-t ion of NVM, and Al ternat iveMemory
technologies.
For this year’s workshop, thedeadline for submitting abstracts
tothe Technical Chairman was April26, 2004. Proceedings consisting
ofbound copies of all abstracts will behanded out to attendees at
the con-ference, along with a list of atten-dees and their phone
numbers ande-mail addresses to allow futurecontact of workshop
colleagues. It isanticipated that the format of the2004 workshop
will be similar tothat of the past years, with anexpected 30-40
technical paper pre-sentations. The last workshop con-sisted of six
technical sessions overa three-day period. The workshopopened with
a Sunday evening reg-istration reception, consisting ofdrinks and
hors d’oeuvres. Break-fast opened each day, while a work-
2004 IEEE Non-Volatile Semiconductor
Memory Workshop (NVSMW)
2004 IEEE Non-Volatile Semiconductor
Memory Workshop (NVSMW)
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July 2004 m IEEE Electron Devices Society Newsletter 5
shop reception dinner and eveningpanel discussion closed out
Tuesdayevening. The workshop formallyclosed on Wednesday
afternoon.Breakfast was also provided onThursday morning, for
thoseremaining in the Monterey area.
The 2004 NVSMW will be held atthe Hyatt Regency in Monterey,
Cali-fornia. The hotel is conveniently situ-ated in the Monterey
peninsula andallows fast access to many sights.Among favorite
destinations are: thefamous Fisherman’s Wharf, CanneryRow, The
Monterey Bay Aquarium,17-Mile Drive, nearby Carmel and themany
tranquil sights of natural beau-
ty of the Monterey coastline and thefine dining experiences of
the area.The Hyatt Regency is located at: OneOld Golf Course Road,
Monterey,California. The hotel can be reachedby TEL: (831)
372-1234.
For registration information andgeneral inquiries about
NVSMW,please contact any of the workshopchairmen. General Chairman:
KellyBaker, Motorola, Inc., Mail DropOE341, 6501 William Cannon
Dr.West, Austin, TX 78735, USA, Phone:(512)-895-8335, Fax:
(512)-895-8605, E-mail: [email protected];Technical
Chairman: Andrei Mihnea,M/S 306, Micron Technology, Inc.,
8000 S. Federal Way, P.O. Box 6,Boise, ID 83707, Phone: (208)
363-1330, FAX: (208) 363-2919, E-mail:[email protected]. Finance
Chair-man: Dr. Stephen Keeney, M/S RN3-01, Intel, 2200 Mission
College Blvd.,Santa Clara, CA 95054, USA, Phone:408-765-0128, Fax:
408-765-5775, E-mail: [email protected].
You can also visit the NVSMW website for up-to-date information
at:http://ewh.ieee.org/soc/eds/nvsmw
Kelly BakerNVSMW General Chair
Motorola, Inc.Austin, TX, USA
Wireless communications is aburgeoning market area and amajor
driver behind the semi-conductor industry, and SiGeBiCMOS and III-V
technologieshave emerged as the manufac-turing processes of choice
formany wireless ICs. If you workor are interested in this
excit-ing area, then the 2004 IEEEBipolar/BiCMOS Circuits and
Tech-nology Meeting (IEEE BCTM) is aconference you want to attend.
The2004 IEEE BCTM will be held at theLe Centre Sheraton Hotel in
Montre-al, Quebec, Canada from 12 to 15,September 2004.
IEEE BCTM has historically beenheld in Minneapolis, MN.
However,due to popular demand, the confer-ence is now on the road,
whichstarted in 2002 in Monterey, CA, in2003, in Toulouse, France,
and backto North America in 2004. Historical-ly, Canada has been a
stronghold ofbipolar research and development,
in manufacturing technologies andcircuits, both in industry and
acade-mic institutions.
Montreal is one of the world’s mostdynamic metropolises,
characterizedby its distinctive “joie de vivre”, enter-tainment,
recreation, and gastronomy.Boasting a rich history, Montreal
isunique in North America for its spe-cial blend of urban modernism
anddiscreet charm inspired by the culturaldistinctiveness of
Quebec.
The technical program for IEEEBCTM consists of one day of
shortcourses given by noted experts, fol-lowed by two days of
invited and
contributed technical presenta-tions in the areas of RF,
devicephysics, process technology,modeling, analog, and
powerdevices. In addition, a specialsession will be held on
emerg-ing technologies. A workshopon Compact Modeling will beheld
the day following the con-ference. There will be exhibits
from vendors with products of inter-est to those working in
thebipolar/BiCMOS area. To comple-ment the technical conference,
therewill be an exciting social program inthe heart of
Montreal.
For registration and other informa-tion, please visit the IEEE
BCTM homepage: http://www.ieee-bctm.org
We hope you will join the IEEE BCTMWorld Tour. See you in
Montreal!
Ross TeggatzBCTM General Chair
Texas InstrumentsDallas, TX, USA
2004 IEEE Bipolar/BiCMOS Circuits and
Technology Meeting (BCTM)
2004 IEEE Bipolar/BiCMOS Circuits and
Technology Meeting (BCTM)
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6 IEEE Electron Devices Society Newsletter m July 2004
• SOI material science/modification,material characterization,
and manu-facture
• SOI device Physics and modeling• SOI circuit applications
(high-perfor-
mance microprocessors, srams,asic, low power, high-voltage,
rf,analog, Mixed mode, etc.)
• Double Gate/Vertical Channel Struc-tures; Other Novel
Structures
• Strained Si-Ge structures • New SOI structures, Circuits,
and
applications (3d integration, dis-plays, microactuators -
MEMS,microsensors, Drop-in RAMS, etc.)
• SOI reliability issues (hot-carriereffects, radiation effects,
high-tem-perature effects, etc.)
• Manufacturability and process inte-gration of SOI devices and
circuits
• Alternate silicon-on-insulator material. Abstracts for the
2004 SOI Confer-
ence were due no later than May 7,2004 to: BACM, by e-mail ONLY
[email protected] in PDF for-mat. Late newspapers with
exception-al merit will be considered for the LateNews session if
submitted on orbefore August 15, 2004.
Once again, the popular One-DayTutorial Short Course will be
offeredpreceding the 2004 SOI InternationalConference. Tutorial
Short Courseinstructors have many years of experi-ence in the field
of silicon-on-insulatortechnology. The course is intended toeducate
attendees in detail about cur-rent trends and issues in the SOI
indus-try. The 2004 SOI Tutorial Short Coursewill focus on future
trends in SOI tech-nologies including such topics as novelSOI
devices and strained silicon oninsulator. Participants will
receivecopies of all visual presentations.
The SOI Conference is held annu-ally throughout the United
States.An advisory board and a technicalcommittee, comprised of
membersfrom the society throughout theworld, guide the conference.
The2004 advisory board members areDimitris Ioannou (George Mason
U),Harold Hovel (IBM), Mike Liu (Hon-eywell), and Ted Houston (TI).
The2004 conference is organized by:General Chair , Mike
Mendicino(Motorola), Technical Program Chair,James Burns
(MIT/Lincoln Lab);Local Arrangements Chair ,Christophe Tretz (IBM
E&TS); Trea-surer and Registration Chair, ToshiroHiramoto
(University of Tokyo);Rump and Poster Chair, Mario Pelel-la (AMD);
and Short Course Chair,Pierre Fazan (LEG/EPFL); and techni-cal
committee members, RichardBrown (U. Michigan), Jean-PierreColinge
(UC Davis), Paul Fechner(Honeywell), Samuel Fung (TSMC),Keith
Jenkins ( IBM Research),Wil l iam Jenkins (NRL), ShigeruKawanaka
(Toshiba), James Kuo(National Taiwan Univ.) , HectorSanchez
(Motorola), Sunit Tyagi(Intel), Rene Zingg (Phillips), GerryNeudeck
(Purdue), Atsushi Ogura(NEC), and Carlos Mazure (SOITEC).
Charleston has made manychanges through the last 300 yearsand
presents many faces to the visitorof today. There was the
CharlesTowne of the 18th century, a wealthygrowing city, Charleston
of the 19thcentury during the rise and fall ofSouthern aristocracy
before the Amer-ican Civil War and the upheaval afterthe war ended.
Like no other city,Charleston has been described, as a
“living museum”, since parts of thecity appear frozen in
time.
Despite its emphasis on preserva-tion, Charleston is also a
modern citythat nurtures theater, dance, music,and visual arts.
There is fishing, golfand tennis, beautiful beaches, andisland
getaways, and a virtual pletho-ra of restaurants & bistros
featuringtraditional as well as modern adapta-tions of “Southern
food”. Charlestonis also a gracious 300 year old portcity and
living historical site that payshomage to its past, celebrates its
pre-sent and moves gracefully into thefuture.
Opened in 1924, The Francis Mari-on Hotel is the largest and
grandest inthe Carolinas. Rising 12 stories abovethe historic
district, many of theHotel’s guestrooms offer spectacularviews of
Charleston’s church steeples,antebellum mansions and famous
har-bor. Located downtown on historicMarion Square, the magnificent
gar-dens, house museums, antique shops,local boutiques, restaurants
andnightlife that make Charleston unique,are all an easy walk from
our confer-ence hotel.
You may contact the 2004 IEEEInternational SOI Conference for
addi-tional information as follows: c/oBACM, 520 Washington Blvd.,
#350,Marina del Rey, CA 90292, Tel: 310-305-7885; Fax:
310-305-1038; Email:[email protected] or the SOI Confer-ence website
at http://www.soiconfer-ence.org.
Michael LiuSOI General Chair
Honeywell SSEDPlymouth, MN, USA
2004 IEEE International SOI Conférence (SOI)2004 IEEE
International SOI Conférence (SOI)(continued from page 1)
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July 2004 m IEEE Electron Devices Society Newsletter 7
The Integrated Reliabili-ty Workshop focuses onensuring
semiconductorreliability through compo-nent fabrication,
design,characterization, and analy-sis tools, as well as
identifi-cation of root cause defectsand physical
mechanismsresponsible for reliabilityproblems. I t provides aunique
environment forunderstanding, developing,and sharing reliability
tech-nology for present and future semi-conductor applications.
Last year’s 2003 IRW discussedall aspects of technology
reliabilityand many aspects of product relia-bi l i ty in an
informal workshopatmosphere through platform paperpresentations,
in-depth tutorials,poster sessions, early evening work-shops, and
the very popular lateevening special interest groups.CMOS and
BIPOLAR device reliabili-ty was discussed both in bulk andSOI. In
the ever-challenging quest toshrink gate dielectric
thicknesses,both conventional SiO2 and high-Kdielectric gates were
contrasted. Ahigh-K tutorial as well as a discus-sion group on this
topic ensures itagain will be hot in 2004. CMOSdevice topics
included both negativeand positive bias temperature insta-bilities
(NBTI, PBTI). An entire ses-sion was devoted to BIPOLAR issueswhich
included state of the art bandgap engineered Si-Ge
BiCMOS.Interconnect fuse and MIMCAPissues were also covered in
thecourse of the papers. Non-contactmeasurement techniques were
pre-sented in a tutorial and discussedfurther by additional authors
in thecourse of the paper presentations.Two other tutorials
included a com-prehensive discussion of fast waferlevel monitoring
for product wafersin manufacturing and a forward
looking tutorial giving an update onthe status of Magnetic RAMs
andtheir reliability issues.
In 2004 IRW plans to build uponlast year’s success.
Our Keynote speaker is alreadychosen, and he will both inspire
andchallenge us with his openingaddress. Here is the
informationabout this talk:
Keynote Speaker: Timothy Forhan,Senior VP Corporate Reliability,
AMISemiconductor.
“Managing Tomorrow’s ReliabilityRisks Today”
“In today’s world, semiconductorICs control mission critical
functions inairplanes and pacemakers to nuclearreactors and ABS
brakes. Big cus-tomers use multiple millions of a singlepart number
and easily differentiate 3-ppm performance from .7ppm perfor-mance.
So, the importance of qualityand reliability in our products has
nev-er been higher… I hope to share someof our thinking, strategy
and results inthis area and hopefully set the stage fora healthy
exchange on managingtomorrow’s risks today. “
In addition, we have planned anexciting venue of Tutorials. They
are:• Gate Dielectric Reliability• Device Reliability• Interconnect
Reliability • Negative Bias Temperature Insta-
bility (NBTI) • Cu-Metallization Reliability
• Product ReliabilityThe deadline for abstract
submissions was June 18,2004 and the Technical Pro-gram Chair is
Rolf-PeterVollertsen, Rolf.Vollert-sen@infineon. com. Thecategories
for the papersfor this year’s platform andposter presentations
sub-missions are:• Wafer level reliability
tests and test approaches• Identification of new
reliability effects & characterization • Reliability models
and simulations• Reliability test structures• Customer product
reliability require-
ments/ manufacturer reliability tasks• Designing-in reliability
(circuits,
processes, products)For the interested reader, or first-
time participant, please go to the IRWwebsite and download the
full call forpapers: http://www.irps/irw
Finally, a brief checklist for yourconsideration and
investigating IRW2004 further:
When: October 18-21 2004Where: Stanford Sierra Camp,
South Lake Tahoe, CATechnical Program Chair: Rolf-
Peter Vollertsen, Infineon Technolo-gies,
[email protected]
Abstract submission deadline:June 18,2004
General Chair: Al Strong, IBM Tech-nology Reliability
[email protected]
Web Site: http://www.irps.orgWhether you are interested in
pre-
senting a paper, or interested insharpening your skills through
thewonderful interaction that takesplace at IRW, we are looking
forwardto meeting you at the conference!
Alvin StrongIRW General Chair
IBM Technology ReliabilityEssex Junction, VT, USA
2004 IEEE International Integrated
Reliability Workshop (IRW)
2004 IEEE International Integrated
Reliability Workshop (IRW)
eds0704.qxd 5/18/04 1:44 PM Page 7
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8 IEEE Electron Devices Society Newsletter m July 2004
Society NewsSociety News
On December 7, 2003, the EDSAdCom held its annual election of
offi-cers and members-at-large. The fol-lowing are the results of
the electionand brief biographies of the individu-als elected.
I. OFFICERSThe following individuals were electedas officers
beginning 1/1/2004:
HIROSHI IWAI(President, with atwo-year term) is aprofessor of
Fron-tier CollaborativeResearch Center,Tokyo Institute ofTechnology
(TIT).Before joining TIT,
he worked at Toshiba Corporation for 26years, having developed
advanced Sidevice technologies. He was also a visit-ing scholar at
Stanford in 1983 and 84.He received the B.E. and Ph.D. degreesin
electrical engineering from the Uni-versity of Tokyo, Japan in 1972
and1992, respectively.
He is currently the EDS Regions/Chapters Committee Chair. He
hasserved for many years with IEEE/EDS,as an Elected AdCom member,
an edi-tor of the EDS Newsletter, and thechair of a number of EDS
conferences.
I L E S A N M IADESIDA (Presi-dent-Elect, with atwo-year
term)received his Ph.D.in electrical engi-neering from
theUniversity of Cali-fornia, Berkeley, in
1979. From 1979 to 1984, he worked inat Cornell University. He
was theHead of the Electrical EngineeringDepartment at Tafawa
Balewa Uni-versity, Bauchi, Nigeria, from 1985to 1987. In 1987, he
joined the Uni-versity of Illinois at Urbana-Cham-paign, where he
is currently theDonald Biggar Willet Professor ofEngineering and
the Director of theMicro and Nanotechnology Labora-tory. He was on
the EDS Administra-
tive Committee and Chaired the EDSEducation Activities
Committee. Hehas served on the organizing com-mittees of various
international con-ferences and served as an AssociateEditor of the
Journal of ElectronicMaterials. He was awarded the Oak-ley-Kunde
Award for Excellence inUndergraduate Education in 1994,named a
University Scholar in 1997,and became an Associate Memberof the
Center for Advanced Study atthe University of Illinois in 1999.
Heis a Fellow of IEEE and AAAS.
PAUL K.L. YU(Treasurer, with aone-year term)received his
Ph.D.from the CaliforniaInstitute of Tech-nology in 1983.That same
year, hejoined the faculty
of the Department of Electrical andComputer Engineering at the
Univer-sity of California at San Diego(UCSD) where he has been a
pro-fessor s ince 1993. At UCSD, heconducts research in materials
anddevice for fiber optics and opto-electronics applications. He is
aSenior Member of IEEE, a Distin-guished Lecturer of the EDS and
amember of OSA. Current ly , hisresearch focus is in solving
prob-lems for microwave photonics sys-tems. He has published more
than100 papers in the area of photonics.
JOHN K. LOWELL(Secretary, with aone-year term)received the
Ph.D.degree in AppliedPhysics from theUniversity of Lon-don. He has
heldtechnical and man-
agerial assignments for United Tech-nologies, Northern Telecom,
Mostek,Texas Instruments, BritishTelecom/Dupont, AMD, Applied
Materi-als, Oracle and most recently PDF Solu-tions. He has also
been a Professor atTexas Tech University and in the Uni-
versity of Texas system, and held Con-sulting Professorships at
other universi-ties in addition to being a VisitingScholar at the
NSF Center for the Syn-thesis, Growth and Characterization
ofElectronic Materials at the University ofTexas at Austin.
Dr. Lowell is a Senior Member of theIEEE, a Distinguished
Lecturer of theEDS and has held AdCom-level posi-tions previously
within the LEO andCAS societies. For fifteen years, he wasalso the
Associate Editor-in-Chief of theIEEE Division I Circuits &
Devices Mag-azine, and was its Guest Editor twice.
II. ADCOM MEMBERS-AT-LARGEA total of seven persons were
electedto three-year terms (2004-2006) asmembers-at-large of the
EDS AdCom.Three of the seven individuals were re-elected for a
second term, while theother four were first-time electees.
Thebackgrounds of the electees span awide range of professional and
techni-cal interests.
A. SECOND TERM ELECTEES:
T O S H I R OH I R A M O T Oreceived B.S., M.S.,and Ph.D degrees
inelectronic engi-neering from theUniversi ty ofTokyo in 1984,1986,
and 1989,
respectively. In 1989, he joined theDevice Development Center,
HitachiLtd., Ome, Japan, where he wasengaged in the device and
circuit designof ultra-fast BiCMOS SRAMs. In 1994, hejoined the
Institute of Industrial Science,University of Tokyo, Japan, where
hehas been a Professor since 2002. Hisresearch interests include
low powerand low voltage design of advancedCMOS devices, SOI
MOSFETs,device/circuit cooperation scheme forlow power VLSI,
quantum effects innano-scale MOSFETs, and silicon singleelectron
transistors. He served as theGeneral Chair of Silicon
Nanoelectron-ics Workshop in 2003, and the ProgramChair in 1997,
1999, and 2001.
Announcement of Newly Elected AdCom MembersAnnouncement of Newly
Elected AdCom Members
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July 2004 m IEEE Electron Devices Society Newsletter 9
LEDA LUNARDIholds a Ph.D. inelectrical engineer-ing from
CornellUniversity. From1985 to 2000, shewas with AT&T BellLabs,
in New Jer-sey, where her
research was in high-speed devices forlight wave systems. From
2000-2003,she was with JDS Uniphase.
Since 2003, she has been a professorat the Department of
Electrical and Com-puter Engineering, North Carolina
StateUniversity, Raleigh with research inter-ests in nanotechnology
and photonicdevices for communication systems.
Dr. Lunardi is an IEEE Fellow andco-recipient of the 2000 LEOS
Engi-neering Achievement Award She haspublished over 90 refereed
papers andconference talks. Presently, she is theeditor of
Optoelectronic Devices forIEEE Transactions on Electron
Devices.
HON-SUM PHILIPWONG received thePh.D. degree in elec-trical
engineeringfrom Lehigh Univer-sity, Pennsylvania,in 1988. He
joinedthe IBM Thomas J.Watson Research
Center, Yorktown Heights, New York, in1988, as a Research Staff
Member. He isnow Senior Manager of the NanoscaleMaterials,
Processes, and DevicesDepartment. He has the responsibility
ofshaping and implementing IBM’s strate-gy on nanoscale science and
technolo-gy. Prior to this appointment, he wasSenior Manager of the
ExploratoryDevices and Integration TechnologyDepartment. His
department wasresponsible for defining and executingIBM’s
exploratory devices and technolo-gy roadmap for silicon
technology
He has worked on CCD’s, CMOSimage sensors, device modeling,
dou-ble-gate FET, strained Si CMOS, ultra-thin body SOI, device
applications ofwafer bonding, and most recently, GeFET, and carbon
nanotube FET.
He is a Fellow of the IEEE and hasserved on both the IEDM
committeeand ISSCC Program committee since1998. He is a member of
the Emerg-ing Research Devices Working Groupof the International
TechnologyRoadmap for Semiconductors (ITRS).
B. FIRST-TIME ELECTEES:
STEVE S. CHUNGreceived his Ph.D.degree from the Uni-versity of
Illinois atUrbana-Champaign,in Electrical Engi-neering in 1985.
He is currently aProfessor and Chair-
man of EECS Undergraduate HonorsProgram and also a Professor
with theElectronics Engineering Department atthe National Chiao
Tung University. Inthe Fall Quarter of 2001, he was aResearch
Visiting Scholar with StanfordUniversity. His current research
areasinclude CMOS devices; flash memory,and reliability
characterization and mod-eling; and nanoelectronics in bio
applica-tions. He has published more than 130journal articles and
conference papers,one undergraduate textbook, and holdsmore than 15
US and ROC patents.
Dr. Chung is a Senior member ofIEEE, DL of EDS, Editor of EDL
andthe Chair of the ED Taipei Chapter. Hehas served on the
committees ofmajor conferences, e.g., VLSI Tech-nology, IEDM, IRPS,
etc. He has alsobeen the Technical Program Chair ofthe 2004 IPFA
and EDMS. His chapterwas awarded the 2002 EDS Chapterof the Year
Award and he receivedthe Outstanding Research Awardfrom the
National Science Council,Taiwan several times. He was alsogranted
Distinguished EE Professorand Engineering Professor by
theEngineering Societies of Taiwan.
MARK S. LUND-STROM is the Donand Carol ScifresDistinguished
Pro-fessor of Electricaland Computer Engi-neering at
PurdueUniversity. Hereceived his B.E.E.
and M.S.E.E. degrees from the Universi-ty of Minnesota and then
worked forHewlett-Packard on integrated circuitprocesses. After
completing his Ph.D. onphotovoltaics at Purdue, he joined
thefaculty in Electrical Engineering in 1980.His teaching and
research currently cen-ter on the physics technology, and
simu-lation of electronic devices. Lundstromis the founding
director of the NSF fund-ed Network for Computational
Nanotechnology. He is an IEEE Fellowand a co-recipient of the
2002 CledoBrunetti Award for his work onnanoscale electronics.
ALBERT WANGreceived his B. Eng.and PhD degrees inEE from
TsinghuaUniversity, Chinaand State Universi-ty of New York
atBuffalo in 1985 and1996, respectively.
He was with National Semiconductoruntil 1998 when he joined the
Facultyof ECE of Illinois Institute of Technolo-gy, where he is an
Associate Professorand directs the Integrated
ElectronicsLaboratory. His research interests cen-ter on
analog/mixed-signal/RF ICs, on-chip ESD protection, IC CAD
andmodeling, SoCs and semiconductordevices, etc. He received the
NSFCAREER Award in 2002. He is theauthor of one book and more than
sev-enty papers, and holds several U.S.patents. He is an Editor for
the IEEEElectron Device Letters, an AssociateEditor for the IEEE
Transactions on Cir-cuits and Systems I. He is an IEEE
Dis-tinguished Lecturer for the ElectronDevices Society and the
Solid-StateCircuits Society.
XING ZHOU re-ceived his B.E.degree in electricalengineering
fromTsinghua Universityin 1983, M.S. andPh.D. degrees inelectrical
engineer-ing from the Uni-
versity of Rochester in 1987 and 1990,respectively. He is
currently an Associ-ate Professor in the School of Electricaland
Electronic Engineering, NanyangTechnological University,
Singapore.His past research interests includeMonte Carlo simulation
of photo carri-er transport and ultra fast phenomenaas well as
mixed-mode circuit simula-tion and CAD tool development. Hisrecent
research mainly focuses onnanoscale CMOS technology anddevice
compact modeling. He is aSenior Member of the IEEE, a memberof the
EDS Compact Modeling andRegions/Chapters committees, an
EDSNewsletter Editor for Region 10, and anEDS Distinguished
Lecturer.
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10 IEEE Electron Devices Society Newsletter m July 2004
The Members-at-Large (MAL) of theEDS AdCom are elected for
staggeredthree-year terms, with a maximum oftwo consecutive terms.
The 1993 Con-stitution and Bylaws changes mandat-ed increasing the
number of electedMAL from 18 to 22, and required thatthere be at
least two members fromboth IEEE Region 8 (Europe, MiddleEast &
Africa) and Region 10 (Asia &Pacific). In 2003, EDS made
changes toits Constitution and Bylaws to requirethat at least one
elected AdCom mem-ber is a Graduate of the Last Decade(GOLD
member). A GOLD member isdefined by IEEE as a member whograduated
with his/her first profession-al degree within the last ten years.
It isalso required that there be at least 1.5candidates for each
opening. From2001 to 2003, seven, eight and seven
positions were filled, respectively. In2004, seven positions
will be filled.
The election procedure begins withthe announcement and Call For
Nomi-nations in the EDS Newsletter. Theslate of nominees is
developed by theEDS Nominations Committee andincludes the
non-Committee andself-nominations received. Nomineesare asked to
submit a two-page bio-graphical resume in a standard
format.Nominations are closed on 15 Octo-ber, and the biographical
resumes aredistributed to the ‘full’ voting mem-bers of AdCom prior
to the DecemberAdCom meeting. The election is thenheld after the
conclusion of the meet-ing. The nominees do not need toattend the
AdCom Meeting/Election torun. On the other hand, if you areelected,
you are expected to attend the
two AdCom meetings a year. In gener-al, the travel and
accommodationcosts to attend these meetings areborne by the elected
member.
A continuing flow of new AdCommembers who are interested in
work-ing for the improvement of the Soci-ety and its related
technical areas isessential for the continued develop-ment of EDS
and the field of electrondevices. Those interested in the field,the
Society, and its operations areencouraged to attend AdCom
meet-ings, become involved in Societyactivities, and consider
running forelection to AdCom.
Steven J. HilleniusEDS Nominations & Elections Chair
Agere SystemsAllentown, PA, USA
EDS Administrative Committee Election ProcessEDS Administrative
Committee Election Process
Call For Nominations - EDS AdComCall For Nominations - EDS
AdComThe Electron Devices Society of theIEEE invites the submission
of nomi-nations for election to its Administra-tive Committee
(AdCom). Presently,the AdCom meets twice per year andis composed of
22 members. Sevenmembers will be elected this year for aterm of
three years, and a maximumof two consecutive terms is allowed.
In2004, the election will be held after theAdCom meeting on Sunday,
12December. Electees begin their term inoffice on 1 January 2005.
For yourinformation, the nominees do notneed to attend the
AdComMeeting/Election to run.
Nominees are being sought to fillthe slate of candidates.
Nomineesmay be self-nominated, or may benominated by another
person; inthe latter case, the nominee must
have been contacted and haveagreed to serve i f elected.
Anymember of EDS in good standing iseligible to be nominated. As
anothercondition for nomination and elec-t ion, a nominee is
expected toattend the two annual AdCom meet-ings. In general , the
travel andaccommodation costs to attendthese meetings are borne by
theelected member.
In 2003, EDS made changes to itsConstitution and Bylaws to
requirethat at least one elected AdCommember is a Graduate of the
LastDecade (GOLD member). A GOLDmember is defined by IEEE as
amember who graduated with his/herfirst professional degree within
thelast ten years. We encourage andare looking forward to
receiving
nominations from EDS members inthis category.
Please send your nominee’sname, address, and
supportinginformation to the EDS ExecutiveOffice Administrator,
Laura J. Riello,IEEE, 445 Hoes Lane, Piscataway, NJ08854, Fax:
732-235-1626, E-Mail:l .r iel [email protected] in t ime to bereceived by
the deadline of 15 Octo-ber 2004. It is very desirable
thatsubmissions include a biographicalsummary in a standard
two-pageformat. The EDS Executive Officecan provide you with an
example ofthe format. If you have any ques-t ions regarding the
nominationrequirements or process, feel free tocontact the
Nominations and Elec-tions Chair, Steven J. Hillenius
([email protected]).
The deadline for EDS chapters torequest a subsidy for 2005 is 1
Sep-tember 2004. For 2004, the EDSAdCom awarded funding to 52
chap-ters, with most amounts primarilyranging from US$250 to
US$1,000. InJune, Chapter Chairs were sent an e-mail notifying them
of the currentfunding cycle and providing them witha list of
guidelines. In general, activi-ties which are considered
fundableinclude, but are not limited to, mem-
bership promotion travel allowancesfor invited speakers to
chapter events,and support for student activities atlocal
institutions. Subsidy requestsshould be sent via e-mail, fax or
mailto the EDS Administrator, Laura J.Riello, IEEE, EDS Executive
Office, 445Hoes Lane, Piscataway, NJ 08854,[email protected] or fax
732 235 1626.Prior to the submission of the subsidyrequest, the
Chapter Chair must sub-mit a chapter activity report to its
respective SRC Chair and Laura Rielloof the EDS Executive Office
by July 1.This report should include a generalsummary of chapter
activities (one totwo pages) for the prior July 1st - June30th
period. You must also attach acopy of the activity report to
yourchapter subsidy request. Final deci-sions concerning subsidies
will bemade by the EDS SRC Chairs/ViceChairs in early November.
Subsidychecks will be issued by late January.
Call for EDS Chapter Subsidies for 2005Call for EDS Chapter
Subsidies for 2005
eds0704.qxd 5/18/04 1:44 PM Page 10
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July 2004 m IEEE Electron Devices Society Newsletter 11
EDS Regions/ChaptersCommittee Report- by Cor L. Claeys, EDS Vice
President ofRegions/Chapters
The EDS Regions/Chapters Commit-tee (RCC) has beenvery active
and suc-cessful during thelast year. In the last6 months of
2003,new ED chapterswere formed in
Eastern North Carolina, Orange Coun-ty, Calcutta, and a Student
Chapter inLouvain-La-neuve, Belgium, bringingthe total to 109
chapters. For themoment the formation of an addi-tional 15 chapters
is under discussionand progressing well. This clearlyindicates the
strong interest andneed for ED chapters. The quality ofthe chapter
activities organized bythe chapters is monitored and trig-gered by
the Chapter of the YearAward. In 2003 there was a toughcompetition
for the award with theED Boise Chapter being the winner.
The re-organization of the RCC into 5subcommittees (North
America East,North America West, Europe-Africa-Mid-dle East, Latin
America, and Asia-Pacific)has turned out to work efficiently andhas
strongly increased the interactionsbetween the Chapters and the
Society.Beginning this year, several additionalVice-Chairs of these
subcommitteeshave been appointed. Region 9 is start-ing with a new
initiative, called the Out-standing Student Paper Award, wherebyan
award will be given to a regional stu-dent who authored or
co-authored dur-ing the previous year a paper orconference
manuscript in an IEEE Jour-nal or Proceedings Volume. Dependingon
the success of this initiative, it maybe extended to other regions
as well.
Regional chapter meetings havebeen organized in Region 9
(SaoPaulo, September) and Region 2
(Washington DC, December). In May,a Region 8 meeting was held in
con-junction with the Ed AdCom meetingin Madrid, Spain. The
organization ofmini colloquia, in which 5 to 10 Distin-guished
Lecturers are participating, isa very successful formula
attractingmany attendees. The most recentones were organized in Sao
Paulo(September 2003, Seoul (September2003), Singapore (October
2003) andBombay (October 2003), and in May inMadrid, Spain. More
and more chap-ters are also making use of the Distin-guished
Lecturer Program.
The near future strategic activitieswill be focusing on issues
related to:• Increasing the number of chapters
and Student chapters in LatinAmerica.
• Special actions to promote the for-mation of new chapters in
Indiaand China, both which have a verystrong potential in ITC and
aregrowing fast. Attention will have tobe given to local
circumstances.
• Extending in some Regions, the num-ber of local Distinguished
Lecturers.
• Further intensifying interactionbetween the chapters and the
Soci-ety, whereby the role of ChapterPartners is very important
Activities and Future Plans ofthe EDS Membership Committee-by
James B. Kuo, EDS Vice President ofMembership
EDS membershiphas been quicklybecoming global-ized these
days.From the 2003 EDSmembership statis-tics, the US (Region1-6)
has 57.6% ofthe total member-ship, Asia and the
Pacific Region (Region 10) has 20.6%and Europe, Middle East
& Africa(Region 8) has 18.3%. According to the
statistics in the recent years, non-USmembership becomes more
and moreimportant. Nowadays the worldwidesemiconductor industry is
reconfigur-ing its territory at a quick pace. In com-pliance with
the EDS strategic planningposition statement to ensure
EDSactivities reflect the current and thefuture global trends, the
EDS Member-ship Committee has been working tocreate new strategies
in membershippromotion. In addition to on-site mem-bership
promotion at important confer-ences and various other
promotionalevents held over the years, EDS mem-bership promotion
has been success-ful from other programs such as theSenior
Membership Program (SMP)and the Membership Fee Subsidy Pro-gram
(MFSP). Among the 38 societiesof IEEE, EDS has the most
successfulSMP program for the past two years.At the last AdCom
meeting, animproved SMP program has beenapproved for further
success in mem-bership retention at EDS. Also thefirst-year Partial
Membership Fee Sub-sidy Program (PMFSP), which isderived from MFSP,
has also beenapproved for attracting potentialmembers. To further
increase EDSmembership, promoting new chaptersin the under-served
regions, especial-ly in China and India, is another majorstrategy.
In conjunction with theRegions/Chapters and Education com-mittees,
via frequent, short visits tomajor universities coordinatedthrough
the Distinguished LecturersProgram, we hope to develop newchapters
in the under-served regions.In China, in addition to the
currentBeijing and Shanghai chapters, EDS iscurrently in the
process of formingchapters in Xi’an and Nanjing, to bet-ter reflect
the booming semiconductorindustry and research activities there.A
similar situation exists in India. EDSmembership promotion is
everymember’s business. We encourageevery one of you to get
involved.
EDS Standing Committee Reports –
Regions/Chapters & Membership
EDS Standing Committee Reports –
Regions/Chapters & Membership
Cor L. Claeys
James B. Kuo
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12 IEEE Electron Devices Society Newsletter m July 2004
EDS Technical Committee Reports – Photovoltaic
Devices & VLSI Technology & Circuits
EDS Photovoltaic DevicesTechnical Committee Report-by Dennis J.
Flood, EDS PhotovoltaicDevices Chair
The PhotovoltaicDevices TechnicalC o m m i t t e e ’ s(PVDTC)’s
primaryresponsibility is tokeep the EDSapprised of the lat-est
worldwideresults in photo-voltaic device and
system research and development, andthe status of world markets
and applica-tions. The Committee will provide theEDS with
highlights from each majorconference and will track emerging
tech-nologies reported in the peer-reviewedliterature. The
Committee’s membershiprepresents each major geographicalregion with
a significant level of activityin both R&D programs and
commercial-ization efforts. At present, those regionsare North
America, Europe, Japan/Asiaand Australia/South Pacific.
Reports to the EDS will come in theform of short white papers
(one to threepages) that will be made available toIEEE members via
direct request to thePVDTC, pending IEEE/EDS approval. Thefirst
such white paper will be issued fol-lowing the European
Photovoltaic SolarEnergy Conference and Exhibition, heldin Paris,
France, June 7-11, 2004. (Forthose interested in more information
onthe European Conference, which is nowthe largest in the world,
please go toh t t p : / / w w w . p h o t o v o l t a i c
-conference.com/ for further information).Information on the next
IEEE Photovolta-ic Specialists Conference, to be held inOrlando,
Florida Jan. 3-8, 2005, will soonbe available via the web.
Current PVDTC members and theareas each represents are: North
Ameri-ca: Dennis Flood [email protected]); John Meakin
([email protected]); David Carlson ([email protected]); Nicola
Pearsall([email protected]) and oneother to be named;
Japan/Asia: Masafu-mi Yamaguchi ([email protected]) and
Kosuke Kurokawa(kurochan@ cc.tuat.ac.jp); and Aus-tralia/South
Pacific: Martin Green(m.green@ unsw.edu.au).
EDS VLSI Technology & CircuitsTechnical Committee Report-by
Bin Zhao, EDS VLSI Technology &Circuits Chair
Six new membersjoined the VLSITechnology and Cir-cuits
TechnicalCommittee at thebeginning of 2004.The committee nowhas 17
membersrepresenting a verywide spectrum of
technical expertise in VLSI devices,technology, and circuits.
The presentmembers are: Ilesanmi Adesida (Uni-versity of Illinois),
Joe Brewer (Universi-ty of Florida), Steve Chung (NationalChiao
Tung University), Jamal Deen(McMaster University), James
Hutchby(SRC), Shuji Ikeda (Trecenti Technolo-gies), Jason Jenq
(UMC), Mark Law(University of Florida), Kwyro Lee(KAIST), Yanhe Li
(Tsinghua Universi-ty), Huiling Shang (IBM), RolandThewes
(Infineon), Akira Toriumi (Uni-versity of Tokyo), Albert Wang
(IllinoisInstitute of Technology), Jeffery Welser(IBM), Reinout
Woltjer (Philips), andBin Zhao (Skyworks) - Chair.
Since its formation in 1998, theVLSI Committee has chartered
itsmissions to identify new technicaltrends, to help foster new
technicalconcepts, and to serve the emergingneeds of the Electron
Devices andSolid-State Circuits communities inVLSI. The committee
achieves thesemissions by initiating topical work-shops, proposing
special journalissues to cover important VLSI topics,organizing or
supporting panel ses-sions, special sessions, and shortcourses at
major conferences. Recentwork accomplished by the committeeand its
members includes:• The International Workshop on
Future Information ProcessingTechnologies held in Nov. 2003.
• Chaired the section of “EmergingResearch Devices” in the
InternationalTechnology Roadmap for Semicon-ductors (ITRS) –
released in Dec. 2003.
• Co-chaired the section of “RF andAnalog/Mixed-Signal IC
Technolo-gies for Wireless Communica-tions” in the ITRS Roadmap
–
released in Dec. 2003.• A special issue on “Integrated Cir-
cuit Technologies for RF CircuitApplications” of Transactions
onElectron Devices has beenapproved – it will be published inMarch
2005.
• Workshop on Compact Modelingheld in March 2004 at the 7th
Inter-national Conference on Modelingand Simulation of
Microsystems.
• Emerging Memory Workshop heldat Stresa, Italy in April 2004.In
2004, the committee continues
its tradition to help the IEDM by pro-viding suggestions and
support forthe Evening Panel Sessions and theEmerging Technologies
Session. Wecontinue to work with ITRS TechnicalWorking Groups in
“EmergingResearch Devices/Materials” and “RFand Analog/Mixed-Signal
IC Tech-nologies for Wireless Communica-tions” for the ITRS 2004
update. Thecommittee’s other on-going activi-ties include:
organizing the Interna-t ional Workshop on VLSITechnologies and
Circuits for RFApplications, Aug. 2004; organizinga short course
and a panel sessionat the International Conference onSolid-State
and Integrated-CircuitTechnology, Oct. 2004; organizingseveral
special journal issues on“Non-Classical CMOS Devices
andTechnologies: Extending theRoadmap,” “Advanced
Non-VolatileMemory Technologies for Embed-ded Applications,”
“HeterogeneousIntegration of Dissimilar Technolo-gies,”
“Information ProcessingTechnology and Circuit Architec-tures beyond
CMOS,” etc.
Looking forward, the VLSI Com-mittee will continue to focus
onidentifying emerging trends in VLSIdevices and technologies,
enhanc-ing the bridge between VLSI tech-nologies and circuits, and
promotingVLSI technical activities globally. Ifyou have ideas and
suggestions forthe VLSI Committee to better serveyour interests and
needs, pleasecontact us. For more information onthe committee and
our activities,please visit our website: http: /
/www.ieee.org/society/eds/techni-cal_committees/vlsi.
EDS Technical Committee Reports – Photovoltaic
Devices & VLSI Technology & Circuits
Dennis J. Flood Bin Zhao
eds0704.qxd 5/18/04 1:44 PM Page 12
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July 2004 m IEEE Electron Devices Society Newsletter 13
The purpose of this article is to givethe EDS community a few
highlightson compound semiconductors fromthe perspective of the
2003 Interna-tional Technology Roadmap for Semi-conductors (ITRS).
This articlementions briefly only a portion of thework done by the
ITRS TechnicalWorking Group on RF and Analog-Mixed Signal (AMS)
Technologies forWireless Communications.
A technology roadmap for RF andAMS applications of compound
semi-conductors now exists in the 2003ITRS. Past ITRS roadmaps
focused onmainstream CMOS and BiCMOSprocesses and applications. For
thefirst time, the current 2003 ITRSRoadmap includes III-V
compoundsemiconductors in the context ofCMOS technology nodes. To
locatethis part of the 2003 ITRS, pleasebrowse to
http://public.itrs.net/Files/2003ITRS/Home2003.htm and thenclick on
the RF and AMS Technolo-gies for Wireless CommunicationsChapter.
This Chapter addresses theintersection of Si based technologiesand
III-V compound semiconductorbased technologies. It presents
tech-nical challenges and requirementsthat RF and AMS technologies
mustmeet for successful deployment inwireless applications that
span thefrequency range from 0.8 GHz to 100GHz. Such applications
include suchcellular phone transceivers, cellularbase station
amplifiers, widebandlocal area networks, automotive radar,
all weather landing, and the like.Wireless applications have
grown
quickly to become significant marketsfor semiconductor device
manufac-turers. The 2003 ITRS now recognizeswireless applications
enabled by RFand AMS devices and circuits as aseparate new system
and technologydriver. In contrast to the other threeITRS drivers,
which are the DRAM,MPU, and ASIC, the correlationbetween feature
size and device per-formance is weaker for RF and analogdevices.
Gordon Moore’s first law [1]is used to assess the density of
main-stream CMOS based devices and isonly one among many
competingways to assess the performance of RFand AMS devices.
Instead, RF andanalog devices must meet many oth-er performance
specifications andparameters that do not scale in thesame manner as
CMOS device met-rics scale.
The most important drivers forwireless communications systemsare
cost, time to market, availablefrequency bands, power consump-
tion, functionality, sizeof mobile units, veryhigh volumes of
prod-uct, appropriate perfor-mance requirements,and standards and
pro-tocols. Standards andprotocols often affectadvances in RF
andAMS technologies muchmore than they affectadvances in many of
theother CMOS technolo-gies. They influenceconsiderably parame-ters
such as operating
frequency, channel bandwidth, andacceptable transmit power.
Suchstandards and protocols impactoverall system performance
andinclude regulations from variousgovernments that determine
fre-quency availability, systems compat-ibility, and market
shares.
The technology requirements formeeting the demands of
wirelesssystems are manifold, often con-flicting and very different
from digi-ta l requirements. Thus, we seeoften today in wireless
systems acombination of specialized RF andanalog technologies such
as SiCMOS, SiGe, Si BiCMOS, SiLDMOS, GaAs MESFET, GaAsPHEMT, GaAs
HBT, InP HEMT, andInP HBT. Integration is closely relat-ed to and
to a great extent dictatedby cost and performance targets.Depending
on requirements eithermonolithic system on chip or sys-tem in
package (SiP) integrationmay be preferred. When required,the SiP
approach is especially suit-ed to bring the specialized RF andAMS
technologies together in ahighly integrated, high-perfor-mance, and
lower cost unit.
RF technologies often requireadded tolerances for the values
ofperformance parameters becauseseveral conflicting or
competingrequirements must be met simulta-neously. Therefore,
design compro-mises must be made amongcompeting performance
parameterssuch as dynamic range, PAE, lineari-ty, high output
power, low current, andlow voltage. For example, the effectivebit
resolution of analog-to-digital con-verters should be greater than
what isneeded for fulfilling a given communi-cation specification
in order to performsignal error correction in “real time”and to
keep latency to a minimum.Increased RF performance for silicon
ispredominantly achieved by geometri-cal scaling. Increased RF
performancefor III-V compound semiconductors isachieved by
optimizing carrier trans-port properties through materials
andbandgap engineering.
Compound Semiconductor Roadmap Embedded
in the 2003 International Technology
Roadmap for Semiconductors
Compound Semiconductor Roadmap Embedded
in the 2003 International Technology
Roadmap for Semiconductors
Acronyms AMS analog-mixed signalASIC application-specific
integrated circuitBiCMOS bipolar-complementary metal oxide
semiconductorCMOS complementary metal oxide semiconductorDRAM
dynamic random-access memoryEDS Electron Devices SocietyHBT hetero
bipolar transistorHEMT high electron mobility transistorLDMOS
laterally diffused metal oxide semiconductorMESFET
metalsemiconductor transistorMHEMT metamorphic high electron
mobility transistorMPU multiprocessing unitPAE power added
efficiencyPHEMT pseudomorphic high electron mobility transistorRF
radio frequency
eds0704.qxd 5/18/04 1:44 PM Page 13
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14 IEEE Electron Devices Society Newsletter m July 2004
The locations of boundaries,shown schematically in Figure
1,between the kinds of RF semiconduc-tors (e.g., Si, SiGe, GaAs,
and InP)are broad, are diffuse, change withtime, and depend very
much on cost.The boundaries between the groupIV semiconductors Si
and SiGe andbetween SiGe and the III-V semicon-ductor GaAs have
been moving tohigher frequencies with time and forother
applications the boundarybetween GaAs and InP is tending toshift to
lower frequencies. Eventually,MHEMTs may displace both GaAsPHEMTs
and InP HEMTs. The widebandgap semiconductors, not shownin Figure
1, such as SiC and GaN willbe used for infrastructure such as
cel-lular base stations at frequencies typ-ically above about 2
GHz. When highvolumes of product are expected, sili-con and more
recently SiGe replacethe III-Vs in those markets for whichgroup IVs
can deliver appropriateperformance at low cost. In futureyears,
carrier frequency is expectedto lose its significance in defining
theboundaries among technologies forsome applications, because most
ofthe RF technologies can provide veryhigh operating frequencies.
Futureboundaries will be dominated moreby such parameters as noise
figure,output power, PAE, linearity, andcost. Two or more
technologies maycoexist with one another for certainapplications
such as cellular trans-
ceivers, modules for terminal or basestation power amplifiers,
and mm-wave receivers. The “future” for com-pound semiconductors
has arrived.
This article is based in part on 1)the paper entitled Circuits
and Devicefor Wireless Communications, sub-mitted to the IEEE
Circuits andDevices Magazine for publication inthe June 2004 issue
and 2) on the2003 ITRS Chapter entitled RF andAnalog Mixed-Signal
Technologiesfor Wireless Communications, Semi-conductor Industry
Association, Inter-national Technology Roadmap forSemiconductors,
2003 edition, Inter-national SEMATECH:Austin, TX, 2003.The ITRS
logo is used by permissionfrom the Semiconductor Industry
Association, The International Tech-nology Roadmap for
Semiconductors,2003 edition. International SEMATE-CH:Austin, TX,
2003.
References:G. E. Moore, Electronics, CrammingMore Components
onto IntegratedCircuits, Vol. 38, No. 8, 19 April1965 issue.
Herbert S. BennettSemiconductor Electronics DivisionElectronics
and Electrical Engineer-
ing LaboratoryNational Institute of Standards and
TechnologyGaithersburg, MD, USA
[email protected]
Figure 1: Application Spectrum (The format and style used here
are adapted from Fig.1 in MicrowaveJournal of the paper by D.
Barlas et al., page 22, June 1999, and are printed with permission
from theEditor, Microwave Journal.)
Congratulations to the EDS Members Elected
to the National Academy of Engineering (NAE)
Congratulations to the EDS Members Elected
to the National Academy of Engineering (NAE)
The U.S. National Academy of Engi-neering (NAE) elected
twenty-five IEEEmembers in 2004, 22 as NAE Membersand 3 as NAE
Foreign Associates. Threeof the twenty-five members elected areEDS
members. These members will beinducted into the NAE this
October.
A private, nonprofit institution, theNAE has more than 2,100
peer-elect-ed members and foreign associates-senior professionals
in business,academia and government who areamong the world’s most
accom-plished engineers.
The three EDS members elected in
2004 were elected as NAE Members.They are: Fellow, Young-Kai
Chen; Fel-low, Paul D. Dapkus; and Member,Daniel C. Tsui.
The other nineteen IEEE memberselected as NAE Members are:
Fellow,Siva S. Banda; Fellow, Rodney A. Brooks;Fellow, Vernon L.
Chartier; Fellow, LarryA. Coldren; Fellow, Eli Fromm;
Fellow,Richard Gambino; Member, Van Jacob-son; Fellow, Biing-Hwang
(Fred) Juang;Senior Member, Pradman P. Kaul;Senior Member, Yoram
Koren; Member,Frank T. Leighton; Fellow, Joan L.Mitchell; Member,
Raymond E. Ozzie;
Life Fellow, Andrew P. Sage; Fellow,Alfred Z. Spector; Senior
Member,Bjarne Stroustrup; Senior Member,Ronald D. Sugar; Fellow,
Vijay Vittal; andMember, Victor W. Zue.
The three IEEE members electedas a NAE Foreign Associate are:
Fel-low, Tatsuo Izawa; Fellow, LennartLjung; and Member, Pierre
Perrier.
Our congratulations to all the IEEEmembers elected to this
prestigiousinstitution.
Jerry M. WoodallYale University
New Haven, CT, USA
eds0704.qxd 5/18/04 1:44 PM Page 14
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July 2004 m IEEE Electron Devices Society Newsletter 15
Status Report from the 2003 EDS
Graduate Student Fellowship Winners
Status Report from the 2003 EDS
Graduate Student Fellowship Winners
In 2000, the IEEE approved the estab-lishment of the Electron
Devices Soci-ety Graduate Student FellowshipProgram. The Program is
designed topromote, recognize, and support grad-uate level study
and research within theElectron Devices Society’s Fields
ofInterest: which include: All aspects ofthe physics, engineering,
theory andphenomena of electron and ion devicessuch as elemental
and compoundsemiconductor devices, organic andother emerging
materials baseddevices, quantum effect devices, opticaldevices,
displays and imaging devices,photovoltaics, solid-state sensors
andactuators, solid-state power devices,high frequency devices,
micromechan-ics, tubes and other vacuum devices. Indeference to the
increasing globaliza-tion of our Society, at least one fellow-ship
is to be awarded to students ineach of three geographical
regions:Americas, Europe/Mid-East/Africa, andAsia &
Pacific.
In July 2003, EDS announced thewinners of the 2003
Fellowships’.The two winners were: Yu-LongJiang of Fudan
University, Shanghai,China and Javier Salcedo of the Uni-versity of
Central Florida, Orlando,FL, USA. The winners are
pursuingdistinctly different research topicsfor their doctoral
degrees. The fol-lowing are brief progress reportswritten by the
award winners.
Yu-Long Jiang isa Ph.D. student inthe Department
ofMicroelectronics atthe Fudan Universi-ty, Shanghai, Chi-na. His
supervisorsare Professor Bing-Zong Li and Profes-sor Guo-Ping
Ru.
Yu-Long spent a year in AxcelisTechnologies, Inc., Beverly,
Massachu-setts, from February 2003 to February2004, as a visiting
scholar. He collabo-rated with scientists from Axcelis andperformed
research of nickel silicideformation on a shallow junction.
Hecontinued his research in this areaafter returning to Fudan
University.
Yu-Long published several paperssince winning the IEEE EDS
graduate
student fellowship. A paper entitled“The reaction
characteristics of ultra thinNi film on undoped and doped Si
(100)”authored by him has been accepted forpublication by the
Journal of ElectronicMaterials. Another paper entitled“Dopant
redistribution induced by Nisilicidation at 300oC” has been
pub-lished in the Proceedings of the FourthInternational Workshop
on JunctionTechnology (IWJT-2004). He gave anoral presentation in
this workshop. Healso helped to organize this workshopand edit the
electronic proceedings,which is sponsored by the IEEE/EDS andEDS
Shanghai Chapter. Besides he hassubmitted two papers, one to
AppliedPhysics Letters to explain the electricaldependence of
nickel silicide filmformed at low temperature on the sub-strate
dopant type and another one toIEEE Electron Devices Letters to
demon-strate the improvement of nickel silicide/Si interface
properties by a 2-step RTPtechnology. He also co-authored (sec-ond
author) an invited paper on nickelsilicide for the International
Conferenceon Materials for Advanced Technolo-gies-2003 in
Singapore.
Yu-Long also paid great attentionon the collaboration with
semiconduc-tor industries. The friendship betweenFudan University
and Axcelis Tech-nologies, Inc. has been strengthenedwith Yu-Long’s
hard research work atthe company headquarters. His jointresearch
work with Axcelis Technolo-gies in nickel silicide has attracted
theinterest of many local fabs in China. Hewas invited by the
SemiconductorManufacturing International (Shang-hai) Corp. (SMIC)
to introduce nickelsilicide studies, which greatly pushedforward
the research collaborationbetween Fudan Univeristy and SMICfor 65nm
node.
Javier A. SalcedoThe IEEE ElectronDevices Society2003 Graduate
Stu-dent FellowshipAward presented tome at IEDM inDecember 2003
rep-resents a memo-rable personal
distinction. I wish to thank the EDS for
the recognition and the support thisprestigious award embodies.
I wouldlike to express my gratitude as well, tomy family, Simón
Bolívar University(USB) and my former teachers at theUSB
Solid-State Electronics Laboratory,my Ph.D. advisor at the
University ofCentral Florida (UCF), Dr. Hefner’s SoCGroup at NIST,
and the ReliabilityGroup at Intersil Corporation, all ofwhom have
provided priceless guid-ance and support for my personal
andprofessional development.
This EDS Award has partly supportedmy research work at UCF
dealing withthe study of novel thyristor-based elec-trostatic
discharge (ESD) protectioncells. In particular it has contributed
withmy projects related to design, modelingand optimization of
multiple variables inthe ESD protection cell and its
ultimateon-chip integration. As a result, superiorESD performance
and I-V characteristicsnot previously observed in other ESDdevices
have been obtained. A detailedstudy of the physics of these ESD
cellsand of the design criterion extendable todifferent
technologies is currently underway. These novel ESD protection
cellsappear very promising for a wide rangeof advanced IC
applications and result tobe increasingly important for highly
inte-grated system-on-a-chip applications,where silicon area is a
critical concern.Two ESD protection systems are beingcurrently
designed and optimized withthe use of thyristor-based cells
calibrat-ed within different fabrication processesfor very
demanding ESD stress condi-tions and wafer area constrains. One
isfor the protection of communicationsICs, the other for protecting
MEMS chipswith embedded gas sensors. Myresearch work has so far
resulted in thefiling of a patent and the submission oftwo
conference papers.
Ilesanmi AdesidaEDS President-Elect & VP of
Educational ActivitiesUniversity of Illinois
Urbana, IL, USA
Stephen A. ParkeEDS Graduate Student Fellowship
ChairBoise State University
Boise, ID, USA
Yu-Long Jiang
Javier A. Salcedo
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16 IEEE Electron Devices Society Newsletter m July 2004
The EDS Chapter of the YearAward is given each year based onthe
quantity and quality of the activi-ties and programs implemented
bythe chapters during the prior July 1st
– June 30th period. Nominations forthe award can only be made by
Chap-ter Partners, SRC Chairs/Vice-Chairs,or self-nominated by
Chapter Chairs.
The winning chapter will receive a
certificate and check for $1,000 to bepresented at the
International ElectronDevices Meeting (IEDM).
The schedule for the award processis as follows:
Call for Nominations for the EDS
Chapter of the Year Award
Call for Nominations for the EDS
Chapter of the Year Award
Action DateCall for Nominations E-Mailed to Chapter Chairs,
6/1Chapter Partners, SRC Chairs & SRC Vice-Chairs Deadline for
Nominations 9/15Regions/Chapters Committee Selects Winner
Early-OctoberAward given to Chapter Representative at IEDM First
week of December
The 2003 IEEE International ElectronDevices Meeting was held
this pastyear in Washington, DC. The twoshort courses that were
offered at thismeeting were titled, “InterconnectScaling: From
Technology to SystemDesign” and “Silicon +: AugmentedSilicon
Technology”. These shortcourses are now available on video-tape to
purchase through IEEE Cus-tomer Service.
Interconnect Scaling: From Technology to System Design Presented
by: Karen Maex, IMECand KULeuven, Leuven, Belgium;Chai-Hong Jan,
Intel Corp., Hills-boro, OR; Jeff Gambino, IBM, EssexJunction, VT;
Eric Beyne, IMEC, Leu-ven, Belgium; Davide Pandini,
STMi-croelectronics, Agrate Brianza, Italy;
Krishna Saraswat, Stanford Univer-sity, Stanford, CA
Order information:Title: Interconnect Scaling: FromTechnology to
System DesignNTSC Order No. EV6991NTSC ISBN: 0-7803-8221-8 PAL
Order No. EV6992PAL ISBN: 0-7803-8222-6 IEEE Member Price:
$380.00List Price: $450.00
Silicon +: Augmented SiliconTechnology Presented by: Tsu-Jae
King, Universi-ty of California, Berkeley, CA; JerryFossum,
University of Florida,Gainesville, FL; Jean-Pierre
Colinge,University of California, Davis, CA;Digh Hisamoto, Hitachi,
Ltd., Tokyo,
Japan; Shinichi Takagi, Toshiba Corp.,Tokyo, Japan; David
Harame, IBM,Essex Junction, VT
Order information:Title: Silicon +: Augmented
SiliconTechnologyNTSC Order No. EV6993NTSC ISBN: 0-7803-8223-4 PAL
Order No. EV6994PAL ISBN: 0-7803-8224-2 IEEE Member Price:
$380.00List Price: $450.00
Here’s how to place your order forthe above videos:Telephone:
(800) 678-4333 (in the USAor Canada) or (732) 981-0060 Fax: (732)
981-9667Online: http://shop.ieee.org/store/Email:
[email protected]
IEDM Short Courses on Videotape IEDM Short Courses on
Videotape
Congratulations to the EDS Members RecentlyElected to IEEE
Senior Member Grade!
Congratulations to the EDS Members RecentlyElected to IEEE
Senior Member Grade!
Chew Hoe Ang*Joseph BarnardEdward Y. Chang*Cynthia A.
Colinge*Tianhong CuiJody N. DefazioPankaj Dixit*
Maxim ErshovAlois P. FreundorferKirk S. GiboneyToshihiko
HamasakiKoji HasegawaAhmed HemaniKaterina Y. Hur
Yoshitada IyamaRichard KeatingMandar J. KhurjekarAlbert
KordeschKenneth S. KundertLluis F. Marsal-GarviRonald J.
Melanson
Andrei MihneaTamotsu NishinoRajendra M. PatrikarMario M.
PelellaMohammed T. QuddusDonald W. ScansenMarathe A.
Shashishekar
Jyuo-Min ShyuChang-Feng WanJames C. Weiler, Jr.Kazuhisa
YamauchiJiong Zhang*
* = Individual designated EDS as nominating entity
If you have been in professional practice for 10 years, you may
be eligible for Senior Membership, the highest gradeof membership
for which an individual can apply. New senior members receive a
wood and bronze plaque and a creditcertificate for up to US $25 for
a new IEEE society membership. In addition, a letter will be sent
to employers, recogniz-ing this new status.
For more information on senior member status, visit
http://www.ieee.org/membership/grades_cats.html#SENIORMEMTo apply
for senior member status, fill out an application at
http://www.ieee.org/organizations/rab/md/smelev.htm.
eds0704.qxd 5/18/04 1:44 PM Page 16
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July 2004 m IEEE Electron Devices Society Newsletter 17
USA, Canada andLatin America(Regions 1-6, 7 & 9)
USA, Canada andLatin America(Regions 1-6, 7 & 9)
ED NorthernVirginia/Washington - by Hrayr SayadianThe Northern
Virginia/WashingtonChapter of the Electron Devices Societyheld four
meetings between Januaryand March 2004.
The January 22, 2004, meeting wastitled NanoBio 101, and was
moderat-ed by Dr. Nathan Swami, Director,iNanoVa. This presentation
featuredDr. Anantha Krishnan, a ProgramManager at the Defense
AdvancedResearch Project Agency and HarryDorn of Virginia Tech. Dr.
Krishnandescribed current bioengineering mul-ti-disciplinary
programs and Dr. Dorndiscussed the current status and appli-cations
of the physics/chemistry inter-face of carbon-based
nanostructures.
Dr. Richard Claus, President ofNanoSonic, and Dr. Harris
Goldberg,President of InMat, described currentapplications of
nano-coated materialsand products at the February 12, 2004,meeting.
Murty Polavarapu, the pastchair moderated the discussion.
The March 9, 2004, nanotechnolo-gy presentation was titled
NanoElec-tronics 101 and was moderated by Dr.Nathan Swami,
Director, iNanoVa.This presentation featured Dr. Stan
Williams, a Senior Hewlett-PackardFellow and the Director of
QuantumScience Research at Hewlett Packardand Dr. Lloyd Harriett,
Chair of theElectrical Engineering Department atthe University of
Virginia. The speak-ers described current research
inmicroelectronics; electron, ion, andphoton beam lithography;
fabricationof nano-scale structures and devices;switching; and
molecular electronics.
Also, on February 10, our Chapterco-sponsored with the MTT
Washing-ton/ Northern Virginia Chapter a pre-sentation titled
“Power Amplifiers:Technology and Design Techniques”by Dr. Dale
Dowson of NorthropGrumman Corporation, whodescribed device
technology and cir-cuit design techniques suitable for1,000 Watt
internally matched powertransistors at L-Band and for 200Watts at
S-Band.
The meetings on nanotechnologyare cosponsored with Atlantic
NanoForum. For more information, pleasesee
http://www.ewh.ieee.org/r2/no_vir-ginia/eds/.
2003 InternationalSemiconductor DeviceResearch Symposium- by
Pankaj B. Shah and Ken A. JonesThe 2003 International
SemiconductorDevice Research Symposium (ISDRS)was held December 10
– 12, in Wash-ington D.C. The Army Research Labo-
ratory, National Institute of Scienceand Technology, Army
ResearchOffice, IEEE, EDS, National ScienceFoundation, Naval
Research Laborato-ry, and the Electronics and ComputerEngineering
Department of the Univer-sity of Maryland sponsored it.
This biannual symposium focuseson futuristic electronic and
photonicdevices and the materials technologynecessary to make them.
Areas suchas novel device concepts, advancedprocessing
technologies, nanotech-nology, wide band-gap semiconduc-tors, MEMS
materials and devices,dielectrics, magnetic materials anddevices,
organic and polymer opto-electronic materials and devices,
ultrahigh frequency devices & RF effects,and high power-high
temperaturedevices, were included. These themeswere highlighted by
three plenarytalks – “Photonic Band gap BasedDesigns for
Nano-Photonic IntegratedCircuits” by Prof. Eli Yablonovitch(UCSB);
“A New Spin on Electronics –Spintronics” by Prof. Stu Wolf (UVaand
DARPA); and “Enhanced Func-tionality in GaN and SiC Devices byUsing
Novel Processing” by Prof.Steve Pearton (UFl).
Three parallel sessions were heldfor the two and half days of
the con-ference with more than 250 paperspresented. Oral
presentation awardswere given in the area of devices toAnthony De
Marco from the Universi-
Regional and Chapter NewsRegional and Chapter News
Ken Jones, Conference Chair, presenting the Aldert vanZiel Award
to Jim Plummer.
Prof. Arora and members of the EDS Student Chapter at
UNICAMP.
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18 IEEE Electron Devices Society Newsletter m July 2004
ty of Maryland for “Maskless Fabrica-tion of JFETs Via Focused
IonBeams”, and in the area of materialsto Shawn Bradley of Ohio
State Uni-versity for “Dependence of SchottkyBarrier Height on
Electronic andChemical Properties of Ni/AlGaN Con-tacts”. Poster
presentation awardswere given in the area of devices toDae Hyun Kim
from Seoul NationalUniversity for “AsymmetricallyRecessed 0.13 mm
In.65Ga.35AsHEMT’s Using Double-Deck ShapedGate Technology”, and in
the area ofmaterials to Hasina Ali of the Univer-sity of Maryland
for “Study of ZnONanocluster Formation withinStyrene-Acrylic Acid
and Styrene-Methacrylic Acid Diblock Copolymerson Si and SiO2
Surfaces”.
The conference banquet highlightwas the Aldert van der Ziel
award giv-en in honor of Professor Aldert vander Ziel for his
distinguished career asan educator and scientist. This
year’srecipient was Dr. James D. Plummer,Dean of Engineering,
FrederickEmmons Terman Professor of Engi-neering, and the John M.
Fluke Profes-sor of Electrical Engineering atStanford University.
Dr. Plummer waschosen because, not only has he beena world renowned
pioneer in the fieldof silicon based electronics, but also asuperb
educator evidenced by hismany teaching awards and his men-toring of
close to 100 Ph.D. students.
Dr. Ken Jones (ARL) chaired thisyear’s organizing committee.
Otherorganizing committee membersincluded Dr. Jerry Woodall (Yale
Uni-versity) - symposium co-Chair, Dr. AlHefner (NIST) - Program
Chair, Dr.Gerry Borsuk (NRL) - Program co-Chair, and Dr. Agis
Iliadis (Universityof Maryland) - Publications Chair.Both Dr.
Hideki Hasegawa, (HokkaidoUniversity) - Asian Continent basedChair
and Dr. Mikael Ostling (KTH Roy-al Institute of Technology) -
EuropeanContinent based Chair, were veryactive in recruiting
participants fromoverseas. Dr. Pankaj Shah (ARL)served as Local
Arrangements Chair,and Dr. Tom Murphy (University ofMaryland) as
Student Awards andPublicity Chair.
For more details, see the confer-ence website at
http://www.ece.umd.edu/isdrs2003/.
~ Murty S. Polavarapu, Editor
ED/MTT Orange County- by Yuhua ChengThe ED/MTT Orange County
Chapterheld a seminar on February 6, 2004 atthe campus of Skyworks
Solutions.Prof. Hiroshi Iwai of the Tokyo Instituteof Technology
was invited to deliver adistinguished lecture on “the future ofCMOS
downscaling”. Dr. YuhuaCheng of Skyworks Solutions hostedthe
seminar. In his talk, Prof. Iwaireviewed the recent trend of
CMOSdownsizing and commented the limitof scaling while discussing
the processand device design and optimization.According to Prof.
Iwai, with the con-sideration of the requirement of theinvestment
for the development andproduction of the chip increasing forevery
new generation, aggressiveglobal alliance strategies
betweencompanies, including universities andgovernment labs, will
become themost important issue for the next 10years in order to
survive the downsiz-ing race.
Prof. Iwai’s talk was well receivedby the audience and there
werearound 40 attendees from universitiesand companies. There was a
one-hour question and answer session.After the seminar, a group of
peoplecontinued another half hour discus-sion with Prof. Iwai on
both the tech-nical contents in the presentation andthe development
of the ElectronDevices Society.
~ Sunit Tyagi, Editor
ED South Brazil- by Jacobus W. SwartOn March 11-12, 2004, the
EDS South-Brazil Chapter and EDS Student Chap-
ter at UNICAMP (petition submitted toIEEE for approval)
organized a seriesof short courses at the State Universityof
Campinas, UNICAMP, in Campinas,SP. Prof. Vijay K. Arora, from
theWilkes University (PA/EUA), gave twocourses as an EDS
Distinguished Lec-turer. The courses were entitled: “TheRole of
Physical and Behavioral Sci-ences in Developing Strategic
Tech-nologies in Micro/Nano-Systems” and“Quantum Nanoengineering”.
Thefirst course was two parts on the after-noon of March 11th and
the secondcourse lasted all day on March 12thand was divided into 4
sessions. Dis-cussions with the participants wereperformed after
each presentation.Prof. Arora’s courses attracted 30attendees, most
of them, staff and stu-dents from the Faculty of Electricaland
Computer Engineering of UNI-CAMP. At the beginning of the
firstshort course, on March 11th, the newEDS Student Chapter at
UNICAMP,was introduced to the participants.The group of students
involved in theorganization of this new chapter werevery helpful in
giving support to makethe two short courses a success. Prof.Arora
also visited the Center for Semi-conductor Components, where
ongoing research projects were present-ed. After his stay at
UNICAMP, Prof.Arora went to the World Congress onEngineering and
Technological Educa-tion (WCETE-2004) in Guarujá / San-tos, Brazil,
from March 14 to March 17,to present his work entitled
“Engineer-ing a Quality Global Organization: Inte-gration of
Business and EngineeringParadigms”.
On March 26, 2004, the EDS South-Brazil Chapter and E