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Introduction to Optoelectronics Optical storage (2) Prof. Katsuaki Sato
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Introduction to Optoelectronics Optical storage (2)

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Introduction to Optoelectronics Optical storage (2). Prof. Katsuaki Sato. What we learn today. Optical storage is a storage using light for read-out of recorded information - PowerPoint PPT Presentation
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Page 1: Introduction to Optoelectronics Optical storage (2)

Introduction to OptoelectronicsOptical storage (2)

Prof. Katsuaki Sato

Page 2: Introduction to Optoelectronics Optical storage (2)

What we learn today.

• Optical storage is a storage using light for read-out of recorded information

• Record density is determined by the spot size of the light beam, which is limited by the wavelength of the light and the NA (numerical aperture) of lens.

• There are three categories of optical storage, i.e., read-only type, write-once type and rewritable type.

• Different physical phenomena are used for recording of the signal on optical disks.

Page 3: Introduction to Optoelectronics Optical storage (2)

Spot size at the focal point

• Numerical aperture of lens– NA=nsinα

• d=0.6λ/NACD-ROM: NA=0.6 λ=780nm→d=780nmDVD: λ=650nm→d=650nmBD: NA=0.85     λ=405nm→d=285nmHD-DVD: NA=0.6     λ=405nm→d=405nm

spot size   d

α

Page 4: Introduction to Optoelectronics Optical storage (2)

Classification of optical storages

• Optical disk– Read only type

• CD, CD-ROM, DVD-ROM

– Recordable type• Direct read after write (Write once type)

– CD-R, DVD-R

• Rewritable (recording and erasing)– Phase change CD-RW, DVD-RAM, DVD-RW, DVD+RW, BD,

HD-DVD– Magneto-optical: MO, GIGAMO, MD, Hi-MD, AS-MO, iD-Photo

• Holographic memory, Hole-burning memory

Page 5: Introduction to Optoelectronics Optical storage (2)

Physical phenomena used in optical disk technology

• CD-ROM, DVD-ROM: – pit formation

• CD-R, DVD-R: – Chemical decomposition of organic dye

• CD-RW, DVD-RAM, DVD-RW, DVD+RW : – Phase change between ordered and disordered states

• MO, MD, GIGAMO, iD-Photo, HD-MD: – Magnetic phase change between ferromagnetic and para

magnetic states • Holographic memory : Photorefractive effect• Hole-burning memory: Local structure change

Page 6: Introduction to Optoelectronics Optical storage (2)

Characteristics of optical disk

• Removable• Large capacity, high density

– 10Gb/in2 (far less than HD(100 Gb/in2))– Aiming at 100 Gb/in2 using near-field technique

• Random accessibility– Cassette MD, VTR DVD– Shorter access than magnetic tape – Longer seek time than HD

• High reliability– Higher head clearance than HD

Page 7: Introduction to Optoelectronics Optical storage (2)

Increase of Areal Density in Optical Disks

T. Suzuki:113th Topical Meeting of Magn. Soc. Jpn. (2000.1) p.11

Hard disk

Optical disk

MO

Page 8: Introduction to Optoelectronics Optical storage (2)

Different Disks

Page 9: Introduction to Optoelectronics Optical storage (2)

CD-ROM

• Polycarbonate substrates : n=1.55• λ=780nm →λ’=503nm (wavelength in the

substrate)• Pit depth:110nm ~ ¼wavelength• Phase difference in reflectionπ : Destruc

tive addition of reflected beams

http://www.infonet.co.jp/ueyama/ip/multimedia/cd.html

Page 10: Introduction to Optoelectronics Optical storage (2)

CD-ROM Drive

• Focusing servo

• Tracking servo

• Optical pickup

http://www.infonet.co.jp/ueyama/ip/multimedia/cd.html

Optical detector

Cylindrical lens

PolarizationBeam Splitter

Collimating lens

Quarter wave-plate

Objective lens

TrackingServo Focusing

Servo

Grating

Page 11: Introduction to Optoelectronics Optical storage (2)

CD-RW

• Phase change

• Crystalline and

amorphous

http://www.cds21solutions.org/main/osj/j/cdrw/rw_phase.html

Substrate

Protectivelayers

UV coat

Land

Recording layer

Reflection layer

Printed surface

Page 12: Introduction to Optoelectronics Optical storage (2)

Phase change recording

• Phase change between different phases• Rewritable:   As grown amorphous state is initialized

to crystalline state by annealing. Recording is performed by heating above the melting point Tm (600C) followed by quenching to amorphous state. Erasing is done by heating to Tcr(400 C) to crystallize.– High level : Heating above Tm→rapid cool→amorphou

s– Low level : Heating above Tcr→slow cool→crystallineDVD-RAM: GeSbTe based alloyDVD±RW: Ag-InSbTe based alloy

Page 13: Introduction to Optoelectronics Optical storage (2)

Recording and erasing

• Rapid cooling :amorphous→low reflectivity

• Slow cooling below Tmcrystalline→high reflectivity

http://www.cds21solutions.org/main/osj/j/cdrw/rw_phase.html

meltingpoint

crystalli-zationpoint

crystalline

amorphous

Energy

low reflectivity

high reflectivity

activation energy

temperature temperatureRapid cool Slow cool

time time

meltingpoint

crystalli-zationpoint

Page 14: Introduction to Optoelectronics Optical storage (2)

Crystalline and amorphous

Initial : crystalline recorded: amorphous

R: high R: lowRecord

Erase

laser spot

recorded mark

Page 15: Introduction to Optoelectronics Optical storage (2)

What is amorphous?

• Amorphous– non crystalline (disordered) state– without LRO (long range order) but with SRO (short

range order)– Atomic arrangement of liquid is frozen– Metastable state introduced by rapid cooling of liquid– Random metallic alloy, chalcogenide glass,

tetrahedral system, oxide glass– DRPHS (dense random packing of hard spheres) can

explain RDF (radial distribution function)

Page 16: Introduction to Optoelectronics Optical storage (2)

Radial distribution function (RDF)

• G(r): Probability to find a neighboring atom at a distance of r.

http://cmt.dur.ac.uk/sjc/thesis/thesis/node79.html

experimentCalculated

Page 17: Introduction to Optoelectronics Optical storage (2)

CD-R

• Organic dye is used

• Thermal decomposition

• Deformation of substrate by heat

• Work as a pit

laser beam

deformationof substrate

protective layer

PC substrate

Dye layer

PC substrate

Organic dye layer

Protective layerReflecting layer

Pre-groove

Recorded mark

CD-R

CD

Protective layer

Reflecting layer

PC substrate

Pit

Page 18: Introduction to Optoelectronics Optical storage (2)

DVD Family

  DVD-ROM DVD-R DVD-RAM DVD-RW DVD+RW

capacity(GB)

4.7 / 9.42層 8.54

3.95 / 7.9 4.7 / 9.4 4.7/9.4 4.7/9.4

Form disk disk cartridge disk disk

Mark formation/Material/reflectivity

pit formation1L R=45-852L R=18-30

thermal deformorganic dyeR=45-85%

phase changeGeSbTe alloyR=18-30%

phase changeAgInSbTe alloyR=18-30%

phase changeAgInSbTe alloyR=18-30%

wavelength nmlens NA

650/6350.6

650/6350.6

6500.6

638/6500.6

6500.65

shortest mark size

1層 :0.42層: 0.44

0.4 0.41-0.43 0.4  0.4

track width 0.74 0.8Wobbled Land pre-bit

0.74Wobbled L/G

0.74Wobbled Land pre-bit

0.74 HF Wobbled groove

Cyclability - - 105 103-104 103-104

Page 19: Introduction to Optoelectronics Optical storage (2)

MO ( magneto-optical ) Recording

• Recording : Thermomagnetic (Curie point ) recording– Heat-assisted magnetic recording

• Playback :  Magneto-optical effect– Rotation of linear polarization is converted to the electri

cal signal• Employed in MO, MD disks• Compatibility• High repeatability : 10,000,000 times• Complicated optical head (Polarization detectio

n )• Novel inventions such as MSR, MAMMOS, DW

DD are realized as commercial products

Page 20: Introduction to Optoelectronics Optical storage (2)

Magneto-optical (MO) Recording

• Recording:Thermomagnetic recordingRecording:Thermomagnetic recording– Magnetic recording using laser irradiationMagnetic recording using laser irradiation

• Reading out: Magneto-optical effectReading out: Magneto-optical effect– Magnetically induced polarization stateMagnetically induced polarization state

• MO disk, MD(Minidisk)MO disk, MD(Minidisk)• High rewritabilityHigh rewritability :: more than more than 101077 times times• Complex polarization opticsComplex polarization optics• New magnetic concepts: MSR, MAMMOS aNew magnetic concepts: MSR, MAMMOS a

nd DWDDnd DWDD

Page 21: Introduction to Optoelectronics Optical storage (2)

History of MO recording• 1962 Conger,Tomlinson Proposal for MO memory• 1967 Mee Fan Proposal of beam-addressable MO recording• 1971 Argard (Honeywel) MO disk using MnBi films• 1972 Suits(IBM) MO disk using EuO films• 1973 Chaudhari(IBM) Compensation point recording to a-GdCo film• 1976 Sakurai(Osaka U) Curie point recording on a-TbFe films1980 Imamura

(KDD) Code-file MO memory using a-TbFe films• 1981 Togami(NHK) TV picture recording using a-GdCo MO disk• 1988 Commercial appearance of 5”MO disk (650MB)• 1889 Commercial appearance of 3.5 ”MO disk(128MB)• 1991 Aratani(Sony) MSR• 1992 Sony MD• 1997 Sanyo ASMO(5” 6GB : L/G, MFM/MSR) standard• 1998 Fujitsu GIGAMO(3.5” 1.3GB)• 2000 Sanyo, Maxell iD-Photo(5cmφ730MB)• 2004 Sony Hi-MD

Page 22: Introduction to Optoelectronics Optical storage (2)

Structure of MO disk media

• MO disk structurePolycarbonatesubstrate

SiNx layer for protection and MO-enhancement

MO-recording layer(amorphous TbFeCo)

Al reflectionlayer

LandGrooveResin

Page 23: Introduction to Optoelectronics Optical storage (2)

• Temperature increase by focused laser beam• Magnetization is reduced when T exceeds Tc• Record bits by external field when cooling

MO recording How to record(1)

External field MO media

Temp

Laserspot

Tc

Coil

M

Tc

Page 24: Introduction to Optoelectronics Optical storage (2)

• Use of compensation point

writing

• Amorphous TbFeCo:

Ferrimagnet with Tcomp

• HC takes maximum at Tcomp

– Stability of small recorded marks

MO recording How to record(2)

T

M TbFeCo

Tcomp

Hc

Mtotal

RTTcTbFe,Co

Page 25: Introduction to Optoelectronics Optical storage (2)

Amorphous TbFeCo Film

TM(Fe,C

o)

TM(Fe,C

o)

R(Tb)

R(Tb)

Page 26: Introduction to Optoelectronics Optical storage (2)

Two recording modesTwo recording modes• Light intensity modulation

(LIM) : present MO– Laser light is modulated by

electrical signal– Constant magnetic field– Elliptical marks

• Magnetic field modulation (MFM) : MD, ASMO– Field modulation by

electrical signal– Constant laser intensity– Crescent-shaped marks

Modulatedlaser beam

Constantlaser beam

Constant fieldModulated field Magnetic head

(a) LIM (b) MFM

Page 27: Introduction to Optoelectronics Optical storage (2)

Shape of Recorded Marks

(a) LIM (light intensity modulation)

(b) MFM (magnetic field modulation)

Page 28: Introduction to Optoelectronics Optical storage (2)

MO recording How to read

• Magneto-optical conversion of magnetic signal to electric signal

D1

D2

+

-LD

PolarizedBeamSplitter

S

N

N

S

N

S

Differentialdetection

Page 29: Introduction to Optoelectronics Optical storage (2)

Structure of MO Head

Laser diode

Photo-detector

Focusing lens

Half wave-platelens

Beam splitter

PBS(polarizing beam splitter)

Rotation ofpolarization

Track pitch

MO film

mirror

LD

PD=photodiode

Bias field coilRecorded marks

Page 30: Introduction to Optoelectronics Optical storage (2)

Advances in MO recordingAdvances in MO recording

1. Super resolution1. MSR

2. MAMMOS/DWDD

2. Use of Blue Lasers

3. Near field1. SIL

2. Super-RENS (AgOx)

Page 31: Introduction to Optoelectronics Optical storage (2)

• Resolution is determined by diffraction limit– d=0.6λ/NA, where NA=n sin α– Marks smaller than wavelength cannot

be resolved• Separation of recording and reading layers • Light intensity distribution is utilized

– Magnetization is transferred only at the heated region

MSR(Magnetically induced super-resolution)

α

d

Page 32: Introduction to Optoelectronics Optical storage (2)

Illustration of 3 kinds of MSR

Page 33: Introduction to Optoelectronics Optical storage (2)

AS-MO standard

LD wavelength 650 nmNA 0.6

Disk diameter 120 mmThickness 0.6 mmTrack pitch 0.6 μ m Land/Groove

Recording method MO & CAD-MSRModulation Laser pumped MFM

Signal processing PRMLbit density 0.235μ m) PR(1,1) or PR(1,2,1)

Velocity control ZCAV/ZCLVCode NRZI+ (DC supressed)

Page 34: Introduction to Optoelectronics Optical storage (2)

iD-Photo specification

Memory Capacity 730 MB

Surface memory density 4.6Gbit/in2 LD wavelength 650 nm

NA 0.6 Disk diameter 50.8 mm

Thickness 0.6 mm Track pitch 0.6 μ m Land/Groove

Recording method MO & CAD-MSR Modulation Pulsed laser strobe MFM bit density 0.235μ m

Signal processing, PRML PR(1,1) +Viterbi

Velocity control ZCAV Code NRZI+

Page 35: Introduction to Optoelectronics Optical storage (2)

MAMMOSMAMMOS(magnetic amplification MO system)(magnetic amplification MO system)

Page 36: Introduction to Optoelectronics Optical storage (2)

Super-RENSsuper-resolution near-field system

• AgOx film : decomposition and precipitation of Ag– Scattering center→near fiel

d– Ag plasmon→enhancemen

t– reversible

• Applicable to both phase-change and MO recording

高温スポット

近接場散乱

Page 37: Introduction to Optoelectronics Optical storage (2)

To shorter wavelengths

• DVD-ROM: Using 405nm laser, successful play back of marks was attained with track pitch =0.26m 、 mark length =213m (capacity 25GB) using NA=0.85 lens [i]。 [i] M. Katsumura, et al.: Digest ISOM2000, Sept. 5-9, 2000, Chitose, p.

18.

• DVD-RW: Using 405nm laser, read / write of recorded marks of track pitch=0.34m and mark length=0.29m in 35m two-layered disk(capacity:27GB) was succeeded using NA=0.65 lens, achieving 33Mbps transfer rate [ii] 。[ii] T. Akiyama, M. Uno, H. Kitaura, K. Narumi, K. Nishiuchi and N. Yamada: Digest ISOM2000, Sept. 5-9, 2000, Chitose, p. 116.

Page 38: Introduction to Optoelectronics Optical storage (2)

Read/Write using Blue-violet LD and SIL (solid immersion lens)

405nm LD

SIL head

NA=1.5405nm80nm mark40GB

I. Ichimura et. al. (Sony), ISOM2000FrM01

Page 39: Introduction to Optoelectronics Optical storage (2)

SIL (solid immersion lens)

Page 40: Introduction to Optoelectronics Optical storage (2)

Optical recording using SIL

Page 41: Introduction to Optoelectronics Optical storage (2)

Hybrid Recording

H. Saga et al. DigestMORIS/APDSC2000, TuE-05, p.92.

405nmLD

TbFeCodisk

ReadoutMR head

Recording head(SIL)

Achieved 60Gbit/in2