-
IXYSPOWEREfficiency Through Technology
Introducing P-Channel Power MOSFETsnext generation p-channel
power mosfets -50v to -600v
IXYS has reinforced its P-Channel Power MOSFET portfolio with
the introduction
of two advanced new families; TrenchPTM and PolarPTM. These
families take
advantage of proven technology strategies which have helped to
make the IXYS
device portfolio the most efficient in the industry.
The TrenchPTM P-Channel Power MOSFET family targets low voltage
applications
requiring drain to source breakdown voltages from -50V to -150V
with drain current
ratings of -18 amperes to -140 amperes. This P-Channel family
(manufactured
using the advanced IXYS Trench2TM process) features an ultra low
Rdson, thus
minimizing conduction losses and promoting improved operating
and thermal
efficiencies.
The PolarPTM P-Channel Power MOSFET family targets applications
requiring
much larger drain to source breakdown voltages starting from
-100V to -600V
with drain current ratings of -10 amperes to -170 amperes. This
P-Channel family
(manufactured using the advanced IXYS PolarTM process) has been
especially
tailored to minimize on-state resistance and gate charge.
These new TrenchPTM and PolarPTM P-Channel Power MOSFETs
represent the
most efficient and rugged discrete P-Channel solutions available
for applications
from -50V to -600V.
septemBer 2008
n e w p r o D U c t B r i e f
overview
visit us at www.ixys.com
for more information, contact product support at (408) 457-9004
PBTRENCHPOLARP 1.3September 2008
-
PolarPTM P-Channel Power MOSFETsnew polar generation p-channel
mosfets -100v to -600v
IXYS’ PolarP™ P-Channel Power MOSFETs are designed to bring a
more cost-effective
solution to ‘high side’ switching applications where a simple
drive circuit referenced to
ground can be employed, circumventing additional ‘high side’
driver circuitry commonly
involved when using a N-Channel MOSFET. This results in a
reduction in component count,
promoting cost savings and circuit simplification in low to
medium power applications.
These PolarP™ P-Channel MOSFETS are fabricated using IXYS’ Polar
technology platform,
which significantly reduces the on-state resistance (Rdson) by
30% and gate charge (Qg)
by 40% in comparison to legacy counterparts, resulting in lower
conduction loss and
providing excellent switching performance. They are dynamic
dV/dt and avalanche rated
making them extremely rugged in demanding operating environments
and can easily be
paralleled due to an on-state resistance with positive
temperature coefficient.
IXYS’ PolarP™ P-Channel Power MOSFETs are ideal in a variety of
applications, with best-
in-class performance and competitive pricing. Applications
include push-pull amplifiers,
buck converters, DC choppers, power solid state relays, CMOS
high power amplifiers,
high current regulators, and high side switching in automotive
and test equipment. The
superior ruggedness of the PolarPTM Power MOSFETs also makes
them suitable devices for
motor control and power cut-off switches or power SSRs for
energy saving applications.
To facilitate optimum part selection, IXYS offers voltage
ratings for these devices at -100V,
-150V, -200V, -500V and -600V with drain currents ranging from
-10A to -170A. They are
offered in various standard discrete packages such as the
TO-247, TO-3P, TO-220, TO-268, TO-
264, TO-263, and SOT-227. In addition, IXYS proprietary ISOPLUS™
packages will be offered
providing UL recognized 2500V electrical junction-to-case
isolation with superior thermal
performance while maintaining the same footprint of an
un-isolated standard package.
overview
featUresFast intrinsic diode• Dynamic dv/dt rated• Avalanche
Rated• Rugged PolarP• TM processlow gate charge and rds(on) •
characterizationlow package inductance•
BEnEFITSlow gate charge results in simple • drive
requirementimproved gate, avalanche and • dynamic dv/dt
ruggednesshigh power density• Fast switching• easy to parallel•
applicationshigh side switching• push-pull amplifiers• Dc-Dc and
Dc-ac converters• Current regulators• automatic test equipment•
Battery charger applications•
www.ixys.com
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PolarPTM p-channel power mosfet application circuits
PolarPTM p-channel power mosfet competitive analysis
IXYS IXTA52P10P yielded the lowest Thermal Resistance (RthJC),
On-Resistance
(Rdson), Gate Charge (Qg), and Reverse Recovery Time (Trr) in
comparison to
competitor device offerings. We observed as low as a 48.5%
decrease in (RthJC),
16.7% decrease in (Rdson), 29% decrease in (Qg), and a 25%
decrease in (Trr).
Competitive analysis was completed with each device rated with
the following
parameters: Vdss = -100V, Id = -30A, & TO-263 (D2-Pak)
housing package.
IXYS IXTA52P10P yielded the highest Repetitive Avalanche Energy
rating
(Eas) and Maximum Power Dissipation (Pd) in comparison to other
major
competitor device offerings. We observed as high as a 69%
increase in
(Ear) and a 48% increase in (Pd) compared to competitor device
offerings.
Competitive analysis was completed with each device rated with
the following
parameters: Vdss = -100V, Id = -30A, & TO-263 (D2-Pak)
housing package.
0
20
40
60
80
100
120
140
160
Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)
RthJC (C⁰/W) (max)
60
120
5 0.5
85
160
6 0.97
IXYS - IXTA52P10P Fairchild - FQB34P10
0
50
100
150
200
250
300
Pd (W) Tc=25°C (max) Ear(mJ)(max)
300
50
155
15.5
200
20
IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L
0
20
40
60
80
100
120
140
160
Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)
RthJC (C⁰/W) (max)
60
120
5 0.5
85
160
6 0.97
IXYS - IXTA52P10P Fairchild - FQB34P10
0
50
100
150
200
250
300
Pd (W) Tc=25°C (max) Ear(mJ)(max)
300
50
155
15.5
200
20
IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L
0
20
40
60
80
100
120
140
160
Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)
RthJC (C⁰/W) (max)
60
120
5 0.5
85
160
6 0.97
IXYS - IXTA52P10P Fairchild - FQB34P10
0
50
100
150
200
250
300
Pd (W) Tc=25°C (max) Ear(mJ)(max)
300
50
155
15.5
200
20
IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L
0
20
40
60
80
100
120
140
160
Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)
RthJC (C⁰/W) (max)
60
120
5 0.5
85
160
6 0.97
IXYS - IXTA52P10P Fairchild - FQB34P10
0
50
100
150
200
250
300
Pd (W) Tc=25°C (max) Ear(mJ)(max)
300
50
155
15.5
200
20
IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L
P-Channel Power MOSFET used
as a positive supply switch
P-Channel Power MOSFET
used as high-side switchP-Channel MOSFETs used in
battery protection circuit
-
TrenchPTM P-Channel Power MOSFETsnew trench p-channel power
mosfets -50v to -150v
IXYS expands its P-Channel product portfolio with the
introduction of the TrenchPTM
P-Channel Power MOSFET family. This new family of P-Channel
devices capitalize on
benefits derived from IXYS’ advanced trench cell technology to
achieve remarkably low
on-state resistance (Rdson) values per silicon area. This
benefit, combined with low gate
charge and intrinsic gate resistance provides the designer with
an extremely efficient and
reliable device for use in a wide variety of applications.
Additional features include an
extended forward bias operating area (FBSOA) and excellent
avalanche capabilities.
TrenchPTM P-Channel MOSFETs are well suited for ‘high side’
switching applications
where a simple drive circuit referenced to ground can be
employed, avoiding additional
‘high side’ driver circuitry commonly involved when using an
N-Channel MOSFET. This
enables designers to reduce component count, thereby improving
drive circuit simplicity
and over-all component cost structure. Furthermore, it allows
for the design of a
complementary power output stage with a corresponding IXYS
N-Channel MOSFET, for a
power half bridge stage paired with a simple drive circuit.
These products are available to support applications requiring
voltage ratings from -50V
to -150V and current ratings from -18A to -140A. Package options
include the TO-220, TO-
247, TO-3P and surface mount TO-263 housing. Common applications
that will benefit
from these devices include high side or load switching, DC/DC
converters, high current
regulators, DC choppers, CMOS high power amplifiers, push-pull
amplifiers, battery
chargers, and power solid state relays.
overview
featUresinternational standard packages Fast intrinsic diode
Avalanche Rated low Qg and rds(on) Extended FBSOA
applicationsload switches high side switches low voltage
applications (automotive, Dc/Dc converters)high efficiency
switching power supplies for portable and battery operated
systemsinverters and battery chargers
BEnEFITSlow gate charge resulting in simple drive
requirementhigh power density Fast Switching
www.ixys.com
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TrenchPTM p-channel power mosfet application circuits
TrenchPTM p-channel power mosfet competitive analysis
1
Application Examples:
Fig. 2: P-channel gate driving example for PWM application
Fig. 2 shows one example of gate driving circuit for high side
P-channel power MOSFET. This is much simpler and more cost
effective than the driving circuits in Figure 5 and 7 for N-channel
MOSFET. In the circuit, Dz, Rz, and Ch were added to the typical
gate driving circuit for an N-channel power MOSFET. The capacitor
“Ch”, which holds DC voltage between the higher and lower gate
drive circuits, must be much larger than the input capacitance of
the P-channel MOSFET. Dz keeps the gate to source voltage in the
range of –Zener voltage to 0.
The product of Ch and Rz determines the speed of the DC voltage
adjustment across Ch. If it’s too small, there will be a large
current, which can damage the gate drive IC or Dz. If it’s too big,
the P-channel MOSFET will operate in the linear mode for a
prolonged period of time. This is due to the slower rise time of
the gate pulse amplitude and can damage the MOSFET. Rh2 and Rl2 are
resistors for controlling MOSFET turn off speed. (Rh1 + Rh2) and
(Rl1 + Rl2) are resistors for controlling MOSFET turn on speed. In
most cases, slower turn on speed is desirable.
2
Figure 6 shows an isolated gate driver circuit driving both
N-channel and P-channel MOSFET with a single pulse transformer. The
N-channel MOSFET is used as a high side switch, while the P-channel
MOSFET is the low side switch. They are connected in a source to
source configuration. This circuit provides dead time by the time
constant difference of charging and discharging the gate input
capacitance.
Figure 6: Single pulse transformer diving both N-channel and
P-channel MOSFET
As pulse transformers are bulky and not so reliable; many
application circuits use expensive photo or current source coupled
gate drive ICs. The simplest method for supplying power to the IC
is using the bootstrap technique, shown in Figure 7. While Ml is
turned on and the source voltage of Mh is near zero, the dc link
capacitor Cb is charged by Db and Rb. In case of the ground voltage
of the upper gate drive IC goes below its reference ground, the IC
can make failure. To reduce this possibility, the gate resistors
are located at the source side of Mh.
3
Figure 8: Low frequency N-channel MOSFET Driving with charge
pump
Commonly used in car applications, almost all loads are
connected between switches and body ground. The switches connect
the +12 V supply to the grounded loads. So, when the car taking
rest, the both ends of the load are in car body ground. If any load
is connected directly to the +12 V supply, it will collect negative
ions and it will easily get rusty or become dirty. Also, there is a
chance that some careless repairman will short the high potential
load to ground, which will cause sparks. Therefore, almost all the
switches in automotive applications are located at the positive
side. To drive the positive side n-channel MOSFET at a very low
frequency, pulse transformer or bootstrap techniques can not be
used. Figure 8 shows the circuit for providing a gate voltage
higher than the DC-link voltage. When the square wave generator
output is at ground, the diode Dc charges the charge pump capacitor
Cp. When the square wave generator output is at the positive
DC-link voltage, diode Dd discharges Cp. The charge is transferred
to Cd, which is the power source of the high side gate drive
circuit.
LoadIn
Mh
Rh1
Rh2
RiQi
Dz
Figure 9: Low frequency P-channel MOSFET driving circuit
As shown in Figure 9, P-channel MOSFET greatly simplifies the
overall circuit of Figure 8. Generally, the simpler circuit is more
reliable. Although the P-channel MOSFET has higher A*Rds(on) than
that of the N-channel MOSFET, in many cases, this simple circuit
makes the larger expensive P-channel MOSFET the most cost effective
solution.
Audio Amplifier: Maybe, audio amplifier is the most important
application of P-channel MOSFET. As the mobility of carrier becomes
lower at higher temperature, some heated part in MOSFET chip pushes
out current to the remaining part of the chip. So, the current
density is automatically well distributed over the whole area of
chip. In the other hand, the heated part of BJT (Bipolar Junction
Transistor) attracts more current density. So, current density
concentrates in heated part and increases temperature more. This
positive feed back makes BJT go into ‘second mode breakdown’. To
avoid this, ‘emitter ballast resistance’ can be used in BJT. But,
it makes an additional power loss.
0
10
20
30
40
50
60
70
80
Rds(on) (max) mOhms
Trr (typ) nS
36
26
60
71
IXYS - IXTP32P05T IR - IRF5305
0
20
40
60
80
100
120
140
160
180
Qg (typ) nC Rds(on) (max) mOhm
Trr (typ) nS
46 4531
54
80
175
IXYS - IXTA28P065T ON - MTB30P06V
0
20
40
60
80
100
120
140
Rds(on) (max) mOhms
Trr (typ) nS
120
62
140
120
IXYS - IXTP18P10T Fairchild - FQP17P10
0
10
20
30
40
50
60
70
80
Rds(on) (max) mOhms
Trr (typ) nS
36
26
60
71
IXYS - IXTP32P05T IR - IRF5305
0
20
40
60
80
100
120
140
160
180
Qg (typ) nC Rds(on) (max) mOhm
Trr (typ) nS
46 4531
54
80
175
IXYS - IXTA28P065T ON - MTB30P06V
0
20
40
60
80
100
120
140
Rds(on) (max) mOhms
Trr (typ) nS
120
62
140
120
IXYS - IXTP18P10T Fairchild - FQP17P10
0
10
20
30
40
50
60
70
80
Rds(on) (max) mOhms
Trr (typ) nS
36
26
60
71
IXYS - IXTP32P05T IR - IRF5305
0
20
40
60
80
100
120
140
160
180
Qg (typ) nC Rds(on) (max) mOhm
Trr (typ) nS
46 4531
54
80
175
IXYS - IXTA28P065T ON - MTB30P06V
0
20
40
60
80
100
120
140
Rds(on) (max) mOhms
Trr (typ) nS
120
62
140
120
IXYS - IXTP18P10T Fairchild - FQP17P10
0
10
20
30
40
50
60
70
80
Rds(on) (max) mOhms
Trr (typ) nS
36
26
60
71
IXYS - IXTP32P05T IR - IRF5305
0
20
40
60
80
100
120
140
160
180
Qg (typ) nC Rds(on) (max) mOhm
Trr (typ) nS
46 4531
54
80
175
IXYS - IXTA28P065T ON - MTB30P06V
0
20
40
60
80
100
120
140
Rds(on) (max) mOhms
Trr (typ) nS
120
62
140
120
IXYS - IXTP18P10T Fairchild - FQP17P10
0
10
20
30
40
50
60
70
80
Rds(on) (max) mOhms
Trr (typ) nS
36
26
60
71
IXYS - IXTP32P05T IR - IRF5305
0
20
40
60
80
100
120
140
160
180
Qg (typ) nC Rds(on) (max) mOhm
Trr (typ) nS
46 4531
54
80
175
IXYS - IXTA28P065T ON - MTB30P06V
0
20
40
60
80
100
120
140
Rds(on) (max) mOhms
Trr (typ) nS
120
62
140
120
IXYS - IXTP18P10T Fairchild - FQP17P10
0
10
20
30
40
50
60
70
80
Rds(on) (max) mOhms
Trr (typ) nS
36
26
60
71
IXYS - IXTP32P05T IR - IRF5305
0
20
40
60
80
100
120
140
160
180
Qg (typ) nC Rds(on) (max) mOhm
Trr (typ) nS
46 4531
54
80
175
IXYS - IXTA28P065T ON - MTB30P06V
0
20
40
60
80
100
120
140
Rds(on) (max) mOhms
Trr (typ) nS
120
62
140
120
IXYS - IXTP18P10T Fairchild - FQP17P10
Single pulse transformer driving both
N-Channel and P-Channel MOSFET
Low Frequency P-Channel
MOSFET Drive Circuit
P-Channel Gate Driving Example
for PWM applications
IXYS IXTP18P10T yielded the lowest on-state resistance Rds(on)
and reverse recovery time (trr) in comparison to
other major competitor devices. We observed as low as a 15%
decrease in Rds(on) and 48% decrease in trr.
Competitive analysis was completed with each device rated with
the following parameters: Vdss=100V, Id=18A,
& TO-220 housing package.
IXYS IXTP32P05T yielded the lowest on-state resistance Rds(on)
and reverse recovery time (trr) in comparison to
other major competitor devices. We observed as low as a 40%
decrease in Rds(on) and 63% decrease in trr.
Competitive analysis was completed with each device rated with
the following parameters: Vdss=50V, Id=32A, &
TO-220 housing package.
IXYS IXTA28P065T yielded the lowest on-state resistance Rds(on),
gate charge (Qg) and reverse recovery
time (trr) in comparison to other major competitor devices. We
observed as low as a 44% decrease in
Rds(on), 15% decrease in Qg, and 82% decrease in trr.
Competitive analysis was completed with each device rated with
the following parameters: Vdss=65V,
Id=28A, & TO-263 housing package.
-
PolarPTM and TrenchPTM summary table
part number vdss (max) vid @ tc=25°c
(a)rds(on) @ tc=25°c (Ω)
ciss (pf) typ
Qg (nc) typ
trr @ tc= 25°c (ns)
r(th)Jc (°c/w) pd (w) package
TrenchP P-Channel Power MOSFETsIXTA32P05T -50 -32 0.036 1975 46
26 1.5 83 TO-263IXTP32P05T -50 -32 0.036 1975 46 26 1.5 83
TO-220
IXTA140P05T -50 -140 0.008 13500 200 53 0.42 298
TO-263IXTP140P05T -50 -140 0.008 13500 200 53 0.42 298
TO-220IXTH140P05T -50 -140 0.008 13500 200 53 0.42 298
TO-247IXTA28P065T -65 -28 0.045 2030 46 31 1.5 83 TO-263IXTP28P065T
-65 -28 0.045 2030 46 31 1.5 83 TO-220
IXTA120P065T -65 -120 0.01 13200 185 53 0.42 298
TO-263IXTP120P065T -65 -120 0.01 13200 185 53 0.42 298
TO-220IXTH120P065T -65 -120 0.01 13200 185 53 0.42 298
TO-247IXTA24P085T -85 -24 0.065 2090 41 40 1.5 83 TO-263IXTP24P085T
-85 -24 0.065 2090 41 40 1.5 83 TO-220IXTA96P085T -85 -96 0.013
13100 180 55 0.42 298 TO-263IXTP96P085T -85 -96 0.013 13100 180 55
0.42 298 TO-220IXTH96P085T -85 -96 0.013 13100 180 55 0.42 298
TO-247IXTA18P10T -100 -18 0.12 2100 39 62 1.5 83 TO-263IXTP18P10T
-100 -18 0.12 2100 39 62 1.5 83 TO-220IXTA76P10T -100 -76 0.024
13700 197 70 0.42 298 TO-263IXTP76P10T -100 -76 0.024 13700 197 70
0.42 298 TO-220IXTH76P10T -100 -76 0.024 13700 197 70 0.42 298
TO-247IXTA44P15T -150 -44 0.065 13400 175 140 0.42 298
TO-263IXTP44P15T -150 -44 0.065 13400 175 140 0.42 298
TO-220IXTH44P15T -150 -44 0.065 13400 175 140 0.42 298
TO-247IXTQ44P15T -150 -44 0.065 13400 175 140 0.42 298 TO-3P
PolarP P-Channel Power MOSFETsIXTA52P10P -100 -52 0.05 2845 60
120 0.42 300 TO-263IXTH52P10P -100 -52 0.05 2845 60 120 0.42 300
TO-247IXTP52P10P -100 -52 0.05 2845 60 120 0.42 300
TO-220IXTQ52P10P -100 -52 0.05 2845 60 120 0.42 300 TO-3PIXTR90P10P
-100 -57 0.27 5800 120 144 0.66 190 ISOPLUS247IXTH90P10P -100 -90
0.25 5800 120 144 0.27 462 TO-247IXTT90P10P -100 -90 0.25 5800 120
144 0.27 462 TO-268
IXTR170P10P -100 -108 0.013 12600 240 176 0.4 312
ISOPLUS247IXTK170P10P -100 -170 0.012 12600 240 176 0.14 890
TO-264IXTX170P10P -100 -170 0.012 12600 240 176 0.14 890
PLUS247IXTN170P10P -100 -170 0.012 12600 240 176 0.14 890
SOT-227IXTC36P15P -150 -22 0.12 2950 55 150 1 150
ISOPLUS220IXTR36P15P -150 -22 0.12 2950 55 150 1 150
ISOPLUS247IXTA36P15P -150 -36 0.11 3100 55 228 0.42 300
TO-263IXTP36P15P -150 -36 0.11 3100 55 228 0.42 300
TO-220IXTQ36P15P -150 -36 0.11 3100 55 228 0.42 300 TO-3PIXTA26P20P
-200 -26 0.17 2740 56 240 0.42 300 TO-263IXTH26P20P -200 -26 0.17
2740 56 240 0.42 300 TO-247IXTP26P20P -200 -26 0.17 2740 56 240
0.42 300 TO-220IXTQ26P20P -200 -26 0.17 2740 56 240 0.42 300
TO-3PIXTR48P20P -200 -30 0.093 5400 103 260 0.66 190
ISOPLUS247IXTH48P20P -200 -48 0.085 5400 103 260 0.27 462
TO-247IXTT48P20P -200 -48 0.085 5400 103 260 0.27 462
TO-268IXTR90P20P -200 -90 0.048 12000 205 315 0.4 312
ISOPLUS247IXTK90P20P -200 -90 0.044 12000 205 315 0.14 890
TO-264IXTX90P20P -200 -90 0.044 12000 205 315 0.14 890
PLUS247IXTN90P20P -200 -90 0.044 12000 205 315 0.14 890
SOT-227IXTA10P50P -500 -10 1 2840 50 414 0.5 250 TO-263IXTH10P50P
-500 -10 1 2840 50 414 0.5 250 TO-247IXTP10P50P -500 -10 1 2840 50
414 0.5 250 TO-220IXTQ10P50P -500 -10 1 2840 50 414 0.5 250
TO-3PIXTR20P50P -500 -13 0.49 5120 103 406 0.66 190
ISOPLUS247IXTH20P50P -500 -20 0.45 5120 103 406 0.27 462
TO-247IXTT20P50P -500 -20 0.45 5120 103 406 0.27 462
TO-268IXTR40P50P -500 -22 0.26 11500 205 477 0.4 312
ISOPLUS247IXTK40P50P -500 -40 0.23 11500 205 477 0.14 890
TO-264IXTX40P50P -500 -40 0.23 11500 205 477 0.14 890
PLUS247IXTN40P50P -500 -40 0.23 11500 205 477 0.14 890
SOT-227IXTR16P60P -600 -10 0.79 5120 92 440 0.66 190
ISOPLUS247IXTH16P60P -600 -16 0.72 5120 92 440 0.27 460
TO-247IXTT16P60P -600 -16 0.72 5120 92 440 0.27 460
TO-268IXTR32P60P -600 -18 0.385 11100 196 480 0.4 310
ISOPLUS247IXTK32P60P -600 -32 0.35 11100 196 480 0.14 890
TO-264IXTX32P60P -600 -32 0.35 11100 196 480 0.14 890
PLUS247IXTN32P60P -600 -32 0.35 11100 196 480 0.14 890 SOT-227