1 >:> > X/' PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON MATERIALS SCIENCE AND TECHNOLOGY SEMICONDUCTOR SILICON/1994 Editors H.R. Huff SEMATECH Austin, Texas W. Bergholz Siemens AG Components Division Regemsburg, Germany K. Sumino Tohoku University Sendai, Japan ELECTRONICS DIVISION Proceedings Volume 94-10 THE ELECTROCHEMICAL SOCIETY, INC., 10 South Main St., Pennington, NJ 08534-2896
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PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM
ON SILICON MATERIALS SCIENCE AND TECHNOLOGY
SEMICONDUCTOR SILICON/1994
Editors
H.R. Huff
SEMATECH
Austin, Texas
W. BergholzSiemens AG Components Division
Regemsburg, Germany
K. Sumino
Tohoku UniversitySendai, Japan
ELECTRONICS DIVISION
Proceedings Volume 94-10
THE ELECTROCHEMICAL SOCIETY, INC.,
10 South Main St., Pennington, NJ 08534-2896
CONTENTS
PREFACE iii
PART 1 - - ULSI OVERVIEW
CHAPTER 1 - - ULSI OVERVIEW 1
INVITED: OVERVIEW OP ULSI TRENDS
P. Chatterjee and G. Larrabee 3
INVITED: OVERVIEW OF ULSI TRENDS IN JAPAN
E. Takeda 20
INVITED: DEEP LEVELS IN SILICON AND SILICON-
GERMANIUM ALLOYS
H. G. Grimmeiss and M. Kleverman 37
PART II - - SILICON PROCESS
CHAPTER 2 - - SILICON CRYSTAL GROWTH 53
INTRODUCTORY REMARKS - SILICON CRYSTAL GROWTH
S. Takasu and W. Zulehner 55
INVITED: DOUBLE LAYERED CZ (DLCZ) SILICON
CRYSTAL GROWTH
S. Kobayashi, H. Fujiwara, T. Fujiwara,T. Kubo, S. Inami, M. Olcui, S. Miyahara,
Y. Akashi, K. Kuramochi, Y. Tsujimotoand S. Okamoto 58
DENSITY VARIATION OF MOLTEN SILICON AND INFLUENCE
ON CRYSTAL PERFECTION
H. Sasaki, K. Terashima, E. Tokizaki
and S. Kimura 70
k-E HYDUODYMVMIC INTEGRATED THERMAL-CAPILLARY
MODEL FOR PREDICTING TEMPERATURE FIELD AND DOPANT
CONCENTRATION IN CZOCHRALSKI GROWTH OF SILICON
T. K. Kinney, D. E. Bornside, W. Zhou,R. A. Brown and K. M. Kim 80
si
INFLUENCE OF THE ROTATION IN THE CZ FURNACE UPON
THE OXYGEN CONCENTRATION IN THE Si CRYSTAL
S. Togawa, A. Yokotani, S. Kimura,
Y. Shiraishi and M. Imai 90
INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON
THE MINORITY CARRIER RECOMBINATION LIFETIME OF
CZOCHRALSKI SILICON CRYSTALS
G. Borionetti, M. Porrini, P. Geranzani,
R. Orizio and R. Falster 104
SILICON FLOATING ZONE PROCESS: NUMERICAL MODELLING
OF RF FIELD, HEAT TRANSFER, THERMAL STRESS
AND EXPERIMENTAL PROOF FOR 4" CRYSTALS
H. Riemann, A. Ltldge, K. Bottcher, H-J. Rost,
B. Hallmann, W. Schrfider, W. Hensel
and B. Schleusener 111
EVALUATION OF FPDS AND COPS IN SILICON
SINGLE-CRYSTALS
H. Yamagishi, I. Fusegawa, K. Takano,
E. lino, N. Fujimaki, T. Ohta
and M. Sakurada 124
GATE OXIDE RELATED BULK PROPERTIES OF
OXYGEN DOPED FLOATING ZONE AND
CZOCHRALSKI SILICON
W. v. Ammon, A. Ehlert, U. Lambert,
D. Graf, M. Brohl and P. Wagner 136
FORMATION OF INTERSTITIAL OXYGEN STRIAT10NS IN
CZ GROWN SILICON SINGLE CRYSTALS
E. lino, K. Takano, I. Fusegawa and H. Yamagishi 148
OXYGEN PRECIPITATION BEHAVIOR IN SILICON DURING
CZOCHRALSKI CRYSTAL GROWTH
M. Hourai, T. Nagashima, E. Kajita, S. Miki,
S. Sumita, M. Sano and T. Shigematsu 156
DISTRIBUTION OF AS-GROWN DEFECTS IN A SILICON
SINGLE CRYSTAL
K. Nakajima, J. Furukawa, H. Furuyaand T. Shingyouji 168
THE GROWTH OF SILICON SINGLE CRYSTALS BY THE
MAGNECTIC FIELD APPLIED CONTINUOUS CZ (CMCZ)METHOD
Y. Arai, M. Kida, N. Ono, K. Abe, N. Machida,H. Furuya and K. Sahira 180
INVITED:
INVITED:
xU
CHAPTER 3 -- WAFER PREPARATION 193
INTRODUCTORY REMARKS - WAFER PREPARATION
R. Takiguichi and P. 0. Hahn 195
INVITED: MANUFACTURING PROCESSES FOR ADVANCEDSILICON ULSI WAFERS
E. Steffen, J. Schandl, H. Lundt
and J. Junge 197
INVITED: THE DUCTILE MODE GRINDING TECHNOLOGY
APPLIED TO SILICON WAFERING PROCESS
T. Abe, Y. Nakazato, M. Dalto,A. Kanai and M. Miyashita 207
SUBSURFACE DAMAGE OF ABRADED SILICON WAFERS
H. Lundt, M. Kerstan, A. Huber and P. 0. Hahn 218
PERFECT SILICON SURFACE BY HYDROGEN-ANNEALING
H. Kubota, M. Numano, T. Amai, M. Miyashita,S. Samata and Y. Matsushita 225
SURFACE CHARACTERIZATION OF HEAT TREATED SILICON
WAFERS
D. M. Lee, D. Ruprecht, D. Hymes and W. Huber 237
STUDY OF TRANSITION METAL CONTAMINATION CAUSED
BY SC-1 TREATMENT USING TRXRF
Y. Mori, K. Uemura, K. Shimanoe and T. Sakon 248
CHAPTER 4 -- THIN FILMS, INTERFACES AND EPITAXY 261
INTRODUCTORY REMARKS -- THIN FILMS, INTERFACES
AND EPITAXY
T- 0. Sedgwickand J. 0. Borland 2 63
INVITED: CLUSTER TOOLS -HARDWARE AND PROCESS
INTEGRATION
J. R. Hauser 265
INVITED: CHEMISTRY OF SiH2CL2 ON SILICON SUR¬
FACES: ADSORPTION SPECIES, ADSORPTION
AND DESORPTION KINETICS AND MODELING
OF Si CVD GROWTH
P. A. Coon, M. B. Robinson, M. L. Wise,A. C. Dillon and S. M. George 277
xiii
DECOMPOSITION OF POLY-Si/Si02 UNDER HYDROGEN PRE-
BAKE IN A REDUCED PRESSURE EPITAXIAL REACTOR
M. Y. Hong, N. D. Theodore, J. Steele
and Y-C. See 288
LOW TEMPERATURE ATMOSPHERIC PRESSURE CHEMICAL
VAPOR DEPOSITION FOR EPITAXIAL GROWTH OF SiGe
BIPOLAR TRANSISTORS
T. O. Sedgwick, J. N. Burghartzand D. A. Grtitzmacher 298
STRUCTURAL AND ELECTRICAL PROPERTIES OF POLY-
SILICON FILMS DEPOSITED AT 5 mbar IN A RTP
REACTORB. Semmaehe, S. Kaddour-Krieger, M. Lemiti,
D. Barbier, S. Fayeulle and A. Laugier 311
A TWO-STEP POLYSILICON DEPOSITION PROCESS FOR
GRADED DOPED GATES
E. Ibok, B. Moore and S. Garg 322
INVITED: THE LIMITATION OF EXTRINSIC DEFECT
DENSITY ON THIN GATE OXIDE SCALING
IN VLSI DEVICES
B. B. Triplett 333
DIELECTRIC DEGRADATION OF SILICON DIOXIDE FILMS
CAUSED BY METAL CONTAMINATIONS
M. Takiyama, S. Ohtsuka, S. Hayashiand M. Tachimori 346
MICROSTRUCTURE, ELECTRICAL PROPETIES AND PASSI¬
VATION OF DEFECTS AT THE SILICON-SILICON-DIOXIDEINTERFACE
A. Correia, D. Ballutaud and J.-L. Maurice 358
STRUCTURE AND MORPHOLOGY OF "D-DEFECTS" IN CZ Si
J-G. Park, H. Kirk, K-C. Cho, H-K. Lee, C-S. Lee
and G. A. Rozgonyi 370
A MODEL FOR ROOM-TEMPERATURE WET OXIDATION OFSILICON