Advanced Silicon/Silicon-Germanium Device Simulations John Barker in collaboration with Asen Asenov, Mirela Borici, Scott Roy, Jeremy Watling, Richard Wilkins, Lianfeng Yang Nanoelectronics Research Centre Department of Electronics and Electrical Engineering University of Glasgow UK SiGe Research Programme Review Meeting, 3rd April, 2003
UK SiGe Research Programme Review Meeting, 3rd April, 2003. Advanced Silicon/Silicon-Germanium Device Simulations. John Barker in collaboration with Asen Asenov, Mirela Borici, Scott Roy, Jeremy Watling, Richard Wilkins, Lianfeng Yang Nanoelectronics Research Centre - PowerPoint PPT Presentation
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device architectureengineered Si compatible materials
novel dielectrics
SOI RSD
interface roughness
many-body “mobility” degradation
atomistic effects
quantum effects
Will need different kinds of transistors in system blocks:
•Datapaths (speed, leakage)•Dedicated DSP (power, leakage)•Memory (density is main concern)•AnaloguePower and leakage determine the size ratiosbetween these blocksNumber of different transistors types is determined byparameter spreadLess devices could solve the problem, but, needcontrol of the threshold (4th terminal), with strongtransfer function.System solutions: adaptive control, coding, ...
System issues
Future of mainstream electronics
Silicon nanoelectronics
Device design and System design required togetherto solve issues of: power, leakage, fluctuations, stability
Silicon, strained silicon, silicon-germanium, germaniumIII-V on silicon/germanium good versatile materials technology
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Lifetime: beyond 2025
THIS IS OUR MOTIVATION FOR BEING IN THE SiGe Project
2. Physics, modelling and simulation
Why is simulation useful?
•Part of the design-optimisation cycle
•Extraction of circuit parameters
•Calibration and extension of commercial tools
•Develop device physics and architecture
•Getting ahead of the game.
Simulation toolsDevelopment of a fully bipolar (electrons and holes) 2-D Full-Band Monte Carlo device simulator for Si/strained Si/SiGe that includes degeneracy, high doping effects, advanced screening models, quantum potential and interface roughness scattering. Down to 30 nm.
Device Physics and new Simulation tools– Investigation of carrier transport and scattering at interfaces– New non-perturbative models for interface roughness scattering– Effects of degeneracy, high doping, band-gap narrowing– Advanced screening models– Quantum transport extensions: density gradient, quantum potential, Wigner function,
Green function– Atomistic studies: classical , semi-classical and full quantum transport
Design - optimisation with partners– Layer and device design for consortium partners– Modelling and scaling study of high linearity MODFETs, based on experimental data
from Daimler Chrysler
Applications to partners and industrySiGe MODFETs, RF devices, Si, strained Si and SiGe well tempered
devices, double gate devices, atomistic devices.Course on Device Modelling
2nd-5th July 2002
Summary of Progress (2002-2003) - see also posters
• An extension of semi-classical Boltzmann-Fuchs theory, that is suitable for efficient inclusion within the Monte Carlo framework.
• Probability of specular or diffuse scattering is chosen according to the carrier k-vector and incident scattering angle. This overcomes one of the major failings of the traditional semi-classical model.
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Ps =exp−4Δrms2 k2cos2ϑ( )
The scattering from a rough surface, has strong randomizing effects, resulting in a broad distribution over the emergent angles, while scattering from a smoother interface has a high probability at emergent angles close to specular
4. Interface Roughness: new non-perturbative model
• Simulation of 67Simulation of 67nmnm IBM IBM Relaxed and Strained Si Relaxed and Strained Si nn-MOSFET.-MOSFET. Provides test for interface roughness simulationsProvides test for interface roughness simulations
• Optimizations of Si/SiGe 70 nm MODFET for RF Optimizations of Si/SiGe 70 nm MODFET for RF and high linearity applications: and high linearity applications: using Daimler-Chrysler data using Daimler-Chrysler data ((part of support for experimental RF part of support for experimental RF and linear systems programme and linear systems programme))
Other work: see posters
4.1 Simulation of 4.1 Simulation of 67nm IBM Relaxed and Strained Si IBM Relaxed and Strained Si nn-MOSFET-MOSFET
Comparison between the n-type Strained Si and control Si MOSFETs:• 67nm effective channel length• Similar processing and the same doping conditions
For the strained Si MOSFET:• 20nm strained Si layer thickness• Strained Si on relaxed SiGe (Ge content: 15%)
K.Rim, et. al., Symposium on VLSI Technology 2001http://www.research.ibm.com/resources/press/strainedsilicon/
IIdd-V-Vgg Current Characteristics: Monte Carlo v Experiment Current Characteristics: Monte Carlo v Experiment
IIdd-V-Vg g Current Characteristics Current Characteristics (higher fields)
Channel Velocities: Monte CarloChannel Velocities: Monte Carlo
Electron Velocities along the channel of IBM 67nm Si n-MOSFET, Vd=Vg=1V
Strained Si 67nm n-channel MOSFET Structure
Id-Vg Current Characteristics for strained Si n-MOSFET
Study 2: Optimizations of Si/SiGe MODFET Study 2: Optimizations of Si/SiGe MODFET for RF and high linearity applicationsfor RF and high linearity applications
• Based on the understanding of a Daimler-Chrysler 70nm Si/SiGe MODFET
5. Development of Advanced Simulation Methodologies
•SiGe heterostructure FET models•Full Band Monte Carlo Device & bulk simulation,Poisson-Schrödinger•Drift Diffusion, Hydrodynamic, Quantum corrected versions
•Quasi-Classical atomistic simulator(2002) unique to Glasgow•Full Non-Equilibrium Green Function simulator (2003)•Green function - T-matrix quantum hydrodynamic atomistic simulator (2003) unique to Glasgow
Grants
NASA
IBM
EPSRC
(Platform)
Ind. partners
NEW
Possible quantum effects within a MOSFET
GateTunnelling
B-to-BTunnelling
S-to-DTunnelling
QuantumConfinement
Quantum transport
6. Advanced Devices
• Intel have announced conventional MOSFETs scaled down to 10nm, and IBM have even announced a 6nm channel length.
• The scaling of this design below 10nm is likely to require intolerably thin gate oxides and unacceptably high channel doping, therefore advocating a departure from the conventional MOSFET concept.
• One of the most promising new device structures is the double-gate MOSFET, with the possibility of scaling to 10nm and below, where direct source-drain tunnelling will become a real possibility.
4 nm Double gate MOSFET:An Artist’s Impression
Classical Quantum
6.1 Double-Gate MOSFET structure
Based on structure of Z. Ren, R. Venugopal, S. Datta, M. Lundstrom, D. Jovanovic, J. Fossum IEDM Technical Digest pp. 715-718 (2000)
density-gradient
Source-Drain TunnellingClassical and Density Gradient Simulations
ID-VG characteristics obtained from classical and calibrated DG simulations for double gate MOSFETs with channel lengths of 20nm and 4nm. VD=1V, VG is applied to both gates. The quantum mechanical threshold voltage shift,VT, is illustrated.
Non-equilibrium Green’s Function Method
• Equations of motion for Green’s functions:
• (E-H-r) Gr (r,r',E) = (r-r')
• (E-H-r) G< (r,r',E) = < Ga (r,r',E)
• (E-H-r) G> (r,r',E) = >> Ga (r,r',E)
r represents self-energy due to open boundaries and scattering
r = U gr (surface) U
• Poisson’s equation
Striations in DOS plots are sub-bands. Spectral shift evident near source barrier. Multiple sub-bands are required for accurate scattering calculations
MOSFET Quantum Mechanical Effects: Sub-bands Jovanovich et al (2001)
Quantum mechanical DOS (spectral function) data taken at Si-SiO2 interface
Non-equilibrium Green’s Function and low-costDensity Gradient Simulations for double gate structure
ID-VG characteristics obtained from Non-equilibrium Green’s function and calibrated DG simulations for double gate MOSFETs with gate lengths ranging from 20nm to 4nm. VD=1V.
Fig. 4 The current approach tosemiconductor device simulationassumes continuous ionised dopantcharge and smooth boundaries andinterfaces.
Fig. 5 Sketch of a 22 nm MOSFETexpected in mass production in 2008.There are less than 50 Si atoms alongchannel. Random discrete dopants,atomic scale interface roughness andline edge roughness introducesignificant parameter fluctuations.
Fig. 6 Sketch of a 4 nm MOSFETexpected in mass production in 2023.There are less than 10 Si atoms alongthe channel. The size of the devicebecomes smaller than the size of alarge molecule.
6.2 The transition to atomistic devices
need more advanced simulation tools
4 nm
Atomistic effects: being studied in depth at Glasgow
Discrete nature of charge
Discrete nature of dopants
Line edge roughness
Interface roughness
Atomic segregation
Discrete many-body carrier interactions
Fischettiasenov et al
Large systems: self-averaging
Small systems: random micro-configurations
Conventional perturbation methods inadequate including NEGF
Exact non-asymptotic T-matrix partial-wave analysis of hard sphere model for impurities
and roughness
Results sensitive to configurationNo self-averaging
•Conductance very sensitive to impurity cluster orientation•Conductance not given by standard GF or Boltzmann•Flow between vortices is reversible: quasi-ballistic suggests flow between impurities and vortices is relaxiveConjecture:
Thermal superposition: Lundstrom picture
Why do small devices work?
actual flow is semi-classical fluid but within a renormalised fluctuation potential landscape.
8. Summary• A new interface roughness scattering model
developed:gives good agreement with 67 nm n-channel Si and Strained Si MOSFETs.
• Design and scaling studies provide useful results forRF and linear devices
• A state-of-the-art Monte Carlo simulator
• Practical and new ab initio quantum simulation tools• Role of atomicity and fluctuations• Advanced device studies down to 4 nm scale
• Silicon nanoelectronics has a great future -lets not ignore it!