IGW50N60T TRENCHSTOP™ Series IFAG IPC TD VLS 1 Rev. 2.8 19.05.2015 Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Qualified according to JEDEC 1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type V CE I C V CE(sat),Tj=25°C T j,max Marking Package IGW50N60T 600 V 50 A 1.5 V 175 C G50T60 PG-TO247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, T j ≥ 25C V CE 600 V DC collector current, limited by T jmax T C = 25C, value limited by bondwire T C = 100C I C 90 64 A Pulsed collector current, t p limited by T jmax I Cpuls 150 Turn off safe operating area, V CE = 600V, T j = 175C, t p = 1μs - 150 Gate-emitter voltage V GE 20 V Short circuit withstand time 2) V GE = 15V, V CC 400V, T j 150C t SC 5 s Power dissipation T C = 25C P tot 333 W Operating junction temperature T j -40...+175 C Storage temperature T stg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO247-3
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IGW50N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 1 Rev. 2.8 19.05.2015
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for : - Frequency Converters - Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package
IGW50N60T 600 V 50 A 1.5 V 175 C G50T60 PG-TO247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25C VC E 600 V
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
IC
90
64 A
Pulsed collector current, tp limited by Tjmax IC p u l s 150
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
IGW50N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 6 Rev. 2.8 19.05.2015
t, S
WIT
CH
ING
TIM
ES
0A 20A 40A 60A 80A
10ns
100ns tr
td(on)
tf
td(off)
t, S
WIT
CH
ING
TIM
ES
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 7Ω, Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E)
t, S
WIT
CH
ING
TIM
ES
25°C 50°C 75°C 100°C 125°C 150°C10ns
100ns
tr
td(on)
tf
td(off)
VG
E(t
h),
GA
TE-E
MIT
T T
RS
HO
LD
VO
LT
AG
E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, rG=7Ω, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA)
IGW50N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 7 Rev. 2.8 19.05.2015
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
0A 20A 40A 60A 80A0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
Ets*
Eoff
*) Eon
and Ets include losses
due to diode recovery
Eon
*
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJE
ts*
Eoff
*) Eon
and Ets include losses
due to diode recovery
Eon
*
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 7Ω, Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E)
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
25°C 50°C 75°C 100°C 125°C 150°C0.0mJ
1.0mJ
2.0mJ
3.0mJ
Ets*
Eoff
*) Eon
and Ets include losses
due to diode recovery
Eon
*
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
300V 350V 400V 450V 500V 550V0mJ
1mJ
2mJ
3mJ
4mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, rG = 7Ω, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 50A, rG = 7Ω, Dynamic test circuit in Figure E)
IGW50N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 8 Rev. 2.8 19.05.2015
VG
E,
GA
TE-E
MIT
TE
R V
OLT
AG
E
0nC 100nC 200nC 300nC0V
5V
10V
15V
480V
120V
c,
CA
PA
CIT
AN
CE
0V 10V 20V 30V 40V
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge (IC=50 A)
Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
I C(s
c), s
hort
circu
it C
OLLE
CT
OR
CU
RR
EN
T
12V 14V 16V 18V0A
100A
200A
300A
400A
500A
600A
700A
800A
t SC,
SH
OR
T C
IRC
UIT
WIT
HS
TA
ND
TIM
E
10V 11V 12V 13V 14V0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector current as a function of gate-emitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C)
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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Information
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