XeTeponpeXO)J;HH6HnOJHlpHH TpaH3HCTOpH C'bC SiGe 6a3a. qacT II: KOHCTPYKTHBHH H TeXHOJIOrHQHH oco6eHocTH, QeCTOTHH xapaKTepHcTHKH, 6a30BH TpaH3HcTopHH CTPYKTypH MOXaMe)); A. A6));YJIa, reHO )J;HMHTpOB I..{efllia 0630pa e oa ce 3an03/1a5lm KOlicmpYKmopume Ha CBlJ YCUfleameflU c IiClJl1upaUfumeece no- UlUpOKOpa3npOClllpalieliue e CAIlJ, JIIIOHHJI U ee'le e peOlUfa eeponeiicKU cmpallu (repMaHU5I, (fJpall- lfU5I,XOflaHa 115l, Aecmpu5I, Hmanu5I) mun mpaH3ucmopu. B cmamU511na ca pa3ZfleOaHtI Memooume 3a noeUUtaeaHe Ha IV U cma6wlU3upaHe pa60mama lia mpaH3ucmopu 3a CBlJ npWLOJlCeHll5l. H3CfleOea1l0 e eflll5lIiUemOHa npoqnma Ha Ge u lla flezupaufll5l npu- Mec e aKmueHama 6a3a e"bpxy AC u OC napaMempume lia mpali3ucmopa. OnucaHu ca OClloeHUlne lnunoee cmpYKmypu- MSST, SSSB, SEEW, meXHume KOl-ICmpYKmUGHU UlneX1WflOZUllliUoc06eHocmu, cmoilHocmu- me Ha OCHOGHUlne AC u DC napaMempu. H3GOOUmeca, lie xOpU30HmClJlHU5ImUGepmUKCIJlIiLl5lm cKeWtUIiZ oOGeooxa 00 peUtaeaUf npOlfec G OUliai\1U'LHumexapaKmepucmuKu lia 6UnOfl5lpHUme mpaJl3ucmopu. B"bGeJICOaHemOHampaH3ucmopHu cmpYKmypu c eoullU'leH UOGOeHpolySi u peGOfllol1U5lma, U3GbpUteHa c ynompe6a Ha xemepo-epi-npexoo Sil SiGel Si c KOHmpoflupyeMa oerpopMaJfU51Ha SiGe CflO51uGUCOKO- OMell polySi eMUlnep omKpuxa HOGUxopU3oHmu 3a CBlJ npUJlOJICeHU5I Ha 6UnOfl5lpflUme xemeponpexoo- HU mpaH3ucmopu. Om H5IKOflKO ZOOUHUycneUtHO ce npeMUliaGa am ynompe6a Ha oucKpemHu npu60pu KbM uHlnezpupaHemo Ull1G lIun c nooflo:J/CKa 81 U naCUGIiUefleMeHmu G mbliKocflOiiliO U3nbflHellUe. Heterojunction bipolar transistors with SiGe base. Part IL rhe aim of this review is to examine the methods for increasing offrand stability work of the transistors in UHF applications. Investigation the profile effect of Ge; described are the basis type structures MSST, SSSB, SEEW their constructional and technologicalfeatures as well as AC and DC parameters. Horizontal and vertical scaling has brought tofundamental process in dynamical characteristics ofbipolar transistors. Applying of transistor structure with single and double poly-Si, and revolution carried out with use of hetero-epi-junction SilSiGeiSi with ruling deformation on SiGe layer and high-omic poly-Si emitter found new lines for UHF applications of heterojunction transistors. \~ qecToTHllTe xapaKTepllCTllKll Ha XOMOnpeXO,I:\HIITe TpaH3llCTOpll MO:iKe,I:\ace nO,I:\06p5ITno CJIe,I:\HllTeHaqllHYI: - BKJIIOqBaHe Ha cnOMaraTeJIHO nOJIe B 6a3aTa Ha TpaH3llCTopa - llMeHHO T03ll MeTO,I:\3ae,I:\HO C'1C CllJIHO HaMaJIeHllTe ,I:\'1JI60QllHll Ha eMllTepHH5I II KOJIeKTOpHH5I PN npexo,I:\ ca OCHOBHllTe npe,I:\nOCTaBKll 3a C'13,I:\aBaHe Ha SiGe HBT; - CllJIHO Marn:a6llpaHe Ha TpaH3llCTOpa B XOPll30H- TaJIHa II BepTllKaJIHa nOCOKa; - TepMHQHll npou,eCll C MaJIKa npO,I:\'1mKllTeJIHOCT II B'13MO:iKHOMllHllMaJIHll TeMneparypll (MaJI'1K TepMllQeH 61O,I:\:iKeT)CJIe,I:\enll-OTJIaraHeTO Ha SiGe-6a3a; .- nOHll:iKeHHe Ha napa3llTHHTe Kanau,llTeTll CTc II CTe Ha KOJIeKTOpHll5I II eMllTepHll5I npeXO,I:\ nOCpe,I:\CTBOM T. Hap. "CneHC'1pll"; - HaMaJIeHlle Ha C'1npOTllBJIeHlleTO fbb' Ha aKTllBHa- Ta 6a3a II Ha KOJIeKTOpHaTa 06JIaCT Ha TpaH3llcTopa 20 ') "LIecToTHlI xapaKTeplIcTIIKII Ha SiGe HBT Bl<.1lIO11CaHe Ha C110MaZamemIO nOlle C 6mama Ha mpwl3ucmopa BKJIIOQBaHeTO Ha cnOMaraTeJIHO nOJIe. (T.e. Ha Ge) B 6a3aTa Ha 6llnOJI5IpHll5I TpaH3llcTop nOBllIllaBa TpaH3llT- HaTa QeCTOTa fT Ha TpaH3llCTOpa [7]. 3aBllCllMOCTTa fT = f(NGe) e nOKa3aHa Ha cpllr. 1. OT qmc 1 ce Bll)K,I:(aCJIe,I:\HOTO: a) YBeJIllQaBaHeTo Ha KOHu,eHTpau,ll5ITa Ha repMaHll5I NGe B 6a3aTa BO,I:\ll,I:\OnOBllIllaBaHe Ha rpaHllQHaTa Qec- TOTa fT; 6) TpaH3llTHaTa qeCTOTa Ha SiGe HBT e onpe,I:\eJIeHO rrO-BllCOKa OT Ta3ll Ha KJIaCllQeCKll5I CllJIllu,lleB 6llnOJI5I- peH TpaH3llCTOp Si BJT (TpaH3llCTOp C Si 6a3a) B 06JIac- TTa Ha Cpe,I:\HllTe TOKOBe, KaTO npll nO-CllJIHO JIerllpaH (1,7.1017 cm-3) KOJIeKTOp Ta3ll pa3JIllKa CTaBa nO-CllJIHO mpa3eHa npll Cpe,I:\Hll II BllCOKll CTOHHOCTll Ha Ie' "E+E", 9-10/2004 r. -" ... -. '"
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High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian
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HUmpaH3ucmopu. Om H5IKOflKOZOOUHUycneUtHO ce npeMUliaGa am ynompe6a Ha oucKpemHu npu60pu
KbM uHlnezpupaHemo Ull1G lIun c nooflo:J/CKa81 U naCUGIiUefleMeHmu G mbliKocflOiiliO U3nbflHellUe.
Heterojunction bipolar transistors with SiGe base. Part IL rhe aim of this review is to examine
the methods for increasing offrand stability work of the transistors in UHF applications. Investigationthe profile effect of Ge; described are the basis type structures MSST, SSSB, SEEW their constructionaland technologicalfeatures as well as AC and DC parameters. Horizontal and vertical scaling has broughttofundamental process in dynamical characteristics ofbipolar transistors. Applying of transistor structurewith single and double poly-Si, and revolution carried out with use of hetero-epi-junction SilSiGeiSiwith ruling deformation on SiGe layer and high-omic poly-Si emitter found new lines for UHF applicationsof heterojunction transistors.
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qecToTHllTe xapaKTepllCTllKll Ha XOMOnpeXO,I:\HIITe
TpaH3llCTOpll MO:iKe,I:\ace nO,I:\06p5IT no CJIe,I:\HllTeHaqllHYI:- BKJIIOqBaHe Ha cnOMaraTeJIHO nOJIe B 6a3aTa Ha
cf pa3IIIlIp1!Ba (ecpeKT Ha Kirk) II KoraTO npeMIiHe 3a,l.(
Kpa1! Ha SiGe CJIOM,ce cpopMlIpa I10TeHlJ,lIaJIeH 6aplIep,
KOlho 3aTOpM031!Ba TpaHCI10pTa Ha TOKOHOCIiTemne,
HaMaJI1!Ba hFE II YBemrqaBa tpd'
OT cplir. 1 ce BlDK,l.(a,qe npli Ic > 9 mA TpaH3lITHaTaqeCTOTa Ha SiGe TpaH3lIcTop e I10-HIiCKaOTTa31I Ha SiTpaH3lIcTop, T.e. TpaH3IICTOp1>TC SiGe 6a3a liMa I1pe-
THpaHa peaKIJ,HOHHa o6pa6oTKa" (flPO, amn. LRP).&0 ce 6a311pa Ha 6'bp3H 113MeHeHH5!Ha TeMneparypa-Ta Ha no)),nO)!(KaTa3a nOCTHraHe Ha CTp'bMHHKOHIJ,eHT-
paIJ,HOHHl1 npoqmnl1 Ha nerl1paIl(l15! npHMec 11 Ha
repMaHl15!. KaKTO6erne nOCO4eHOB '-IaCTI, B no-paHeHBapHaHT enHTaKCHaJiHOTOHapaCTBaHe Ha eMHTepHl15!,
6a30BH5! 11KOJleKTOpHH5!CJlOHce H3B'bpUIBarne lIOCJle-)),OBaTenHO,6e3 Me)!()),HHHO113Ba)!()J,aHeHa Si nO)),JlmK-
Ka, B e)),HH H C'bIl( peaKTOp. Opl1eHTl1pOB'b'-IHHTe
)),e6eJll1HHHa KOJleKTOpa,6a33Ta H eMHTepa B [9] ca C'bOT-
BeTHO2 ).lm/200A 14100A. OM114Hl1TeKOHTaKTl1caHa 6a3aTa Ha Ti/Al-;- 1%Si.
B [10] 11 [11] ca H3roTBeHl1 6HIIOn5!pHl1 TpaH3HCTO-
pH C'bC Cl1J1HIJ,HeBaH SiGe 6a3a C nnaBeH KOHIJ,eHTpaIJ,H-
OHeHnpoqmn - T.Hap. "nJiaBHa" 6a3a H nOnHCl1J1l1IJ,HeB
eMl1Tep, H3non3BaHKH Hl1CKOTeMneparypHo emnaKCH-MHO OTJlaraHe Ha cnoeBeTe. KaKTO 6erne oT6eJl5!3aHO B
'-IaCT I, HaH-H3nHTamI51T MeTO)),3a OTnaraHe Ha SiGe 6a3a
3a HBT 11HHTerpMHH CXeMl1 Ha 6a3aTa Ha HBT e XH-
MWIHOTO OTJlaraHe OT ra30Ba <pa3a B CBp'bXBHCOK BaKY-
YM (UHV/CVD), a)),aTITHpaH mpBOHa'-IMHO 3aBiCMOS
npHnO)!(eHH5!. IIpl1 UHV/CVD SiGe CJlOeBe ce OTnaraT
npH to = 400 -;- 500°C C'bC CKOpOCT 4 -;- 40 A Imin. KOH-TpOJl'bT Ha pa3MepHTe e npeIJ,H3eH. PaBHoMepHocTTa Ha
OTJlaraHeTO OT nJiaCTHHa K'bM nJiaCTHHa e 1%, a OTnpo-IJ,ec K'bM npoIJ,ec - 5%. KpHTH4eH npeme)), Ha TeXHOJlO-
rH'-IHl1Te MeTO)),l13a H3rOTB5IHe Ha SiGe TpaH3HCTOpl1 e
HanpaBeH B [12].
KOHI~eHTpaIJ,IIOHeH npocplIJI Ha Ge B 6a3aTa Ha
HBT II napaMeTpII Ha nOJIyqeHIITe TpaH3IICTOpII
Berne YCTaHoBeHo, '-Ie 3a)),a ce nonY'-IaT MHors> )),o6pl1
DC 11)),HHaMl1'-IHl1napaMeTpH Ha HBT npH HHCKOH BH-
COKOC'b)),'bp)KaHHe Ha Ge B 6a3aTa, e Heo6xo)),l1Ma ynoT-
pe6a Ha HapaCTBaIl(a no CJlO)!(eH 3aKOH KOHIJ,eHTpaIJ,H5I
Ha Ge - Hanp. TpH'bI"bnHl1, TpaneIJ,OBl1)),Hl1 11 IJ,HcppOBH
Ha paBHoMepeH II HenpeK'bCHaT OKHceH CJIOH, BKJI. 11no
'bfJ1HTe Ha eMIITepa.
H
B) HBT C'bC CAMOCbBMECTlIMACTPYKTYPA
A:
1) C npocT eMIiTepeHnpo30pen; (simple emitter window).2) C BLHillHa6a3a npeAIi enliTaKCIiH(extrinsic base before epi ).3) C BLHillHa6a3a CJIeAenllTaKCIiH(extrinsic base after epi ).B:1) Me3a nOAooeH CaMOC'bBMeCTeHTpaH3l1cTop, 1I30JIlipaH C nJIIITKIIKaHaBKII (meza self-
[2] Brassington,M.P.,M.H. El-Diwanyet aI.,An advancedsingle-levelpolysilicon sub micrometerBiCMOS technology,IEEE Trans.on Electron Devices, ED-36, April 1989,pp 712-719.
[3] Gruhle, A., The influence of emitter-base junctiondesign on collector saturation current, idealityfactO/; Earlyvoltage and device switching speed of Si/SiGe HBT's, IEEETrans. on Electron Devices, ED-41, February 1994, pp 198-203.
[4] Patton, G. 1., J. H. Comfort et aI., 75 GHz-fr SiGebase heterojunctionbipolar transistors,IEEE ElectronDeviceLetters, voUl, April 1990, pp 171-173.
"E+E", 9-10/2004 r.
[5] Kirchgessner, J., J. Teplik et aI., An advance 0,4 umBiCMOS technologyfor highpe/jormance ASiC applications,mDM Tech. Dig., 1991, pp 97-99.
[6] Tang,D.D., T.C.Chen et aI., The design and electricalcharacteristicsofhigh-peljormance single-poly ion-implantedbipolar transistors, IEEE Trans. on Electron Devices, ED-36, September 1989,pp 1703-1710.
[7] Vook,D., T.I. Kamins et aI., Double diffilsed gradedside-back bipolar transistors, IEEE Trans. on ElectronDevices, ED-41, No 6,1994, pp 1013-1016.
[8] King, c.A., J.1. Hoyt et aI.,Si/ SiJ.pe, heterojunctionbipolar transistorsproduced by limited reactionprocessing,IEEE Electron Device Lett. EDL-lO, 1989,p. 52.
[9] Gibbons, J.F. et aI., SiGe-base poly-emitter junctionbipolar transistorsfabricated by limited reactionprocessing,IEDM Tech. Dig.1988, pp566.
[10] Meyerson, B.S., Low temperature silicon epitaxy byultra-high vacuumlchemical vapour deposition, App. Phys.Lett. March 1986, pp797-799.
[12] Harame, D.L., J.H. Comfort, E.F. Grabbe et aI., Si/SiGe epit(L'(ial-base transistors - Part i: Ma-terials, physicsand circuits,IEEE Trans. on Electron Devices,ED-42, March1995, pp 455-468.
[13] Burghartz, J.N., J.H. Comfort et aI., Sub-30 ps ECLcircuits, using high-fT Si and SiGe epitaxial base SEEWtransistors, IEDM Tech. Dig.1990, pp297-300.