High-Brightness InGaN–GaN Power Flip-Chip LEDs Sum DJ Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009
Shoou-Jinn Chang , Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin. High-Brightness InGaN–GaN Power Flip-Chip LEDs. JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009. Sum DJ. Outline. Introduction - PowerPoint PPT Presentation
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High-Brightness InGaN–GaN Power Flip-Chip LEDs
Sum DJ
Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai,Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin
JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009
Outline
• Introduction
• Experiment
• Results and discussion
• Conclusion
• References
Introduction
• In this work, we report the fabrication of
InGaN–GaN power flip-chip (FC) LEDs using grinding to rough the backside surface of sapphire substrate.
LED-I : 366.5mWLED- II : 271.8mWLED-III :185.1mW@700mA
700mA
Results and discussion
0.35A
Results and discussion
Conclusion
• We can achieve a 200 times larger peak-to-valley distance on the backside sapphire substrate by conventional lapping/polishing.
• It was also found that we can simultaneously enhance output power and improve device reliability by roughening sapphire backside surface of the power FC LEDs.
References
• Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai,Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin“High-Brightness InGaN–GaN Power Flip-Chip LEDs,” J. Lightwave Technol. VOL. 27, NO. 12, JUNE 15, 2009