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Page 1: Hbridge Reference Ualberta Arvp

A High Power H-Bridge

Vincent Sieben

September 2003 - Revision 1.0

Page 2: Hbridge Reference Ualberta Arvp

Contents

1 Overview 1

1.1 Brief Specifications of High Power H-Bridge . . . . . . . . . . . . . . . . 1

2 H-Bridge Principles 2

2.1 Direction Control - H-Bridge Topology . . . . . . . . . . . . . . . . . . . 2

2.2 Speed Control - PWM Technique . . . . . . . . . . . . . . . . . . . . . . 5

3 Design Description 7

3.1 Turning On The Upper MOSFETS . . . . . . . . . . . . . . . . . . . . . 7

3.1.1 MOSFET Driver Chip - HIP4081A . . . . . . . . . . . . . . . . . 7

3.2 Feedback EMF Reduction - Large Main Capacitor . . . . . . . . . . . . 9

3.3 Regenerative Current Circulation . . . . . . . . . . . . . . . . . . . . . . 9

3.4 Shoot-Through Protection . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4 Pictures of Final PCB 13

5 Future Improvements 14

Bibliography 15

A Final Schematic 16

B Final PCB 18

C Bill of Material - BOM 22

Page 3: Hbridge Reference Ualberta Arvp

Chapter 1

Overview

This document is intended to give an introduction to H-Bridges and to briefly ex-

plain the design principles behind the schematic diagram of the High Power H-Bridge

designed. The reader is encouraged to look over the reference list at the end of the

document for further information on H-Bridges and Power electronics.

1.1 Brief Specifications of High Power H-Bridge

• 70 Amps - Continuous Current

• 150 Amps - Maximum Current (Short Durations)

• 48 Volts - Maximum Voltage

• 200 mA - Standby By current

• Direction and PWM as inputs

• Solid State - Fast Directional Changing

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Chapter 2

H-Bridge Principles

An H-Bridge is an electronic power circuit that allows motor speed and direction to

be controlled. Often motors are controlled from some kind of ”brain” or micro con-

troller to accomplish a mechanical goal. The micro controller provides the instructions

to the motors, but it cannot provide the power required to drive the motors. An

H-bridge circuit inputs the micro controller instructions and amplifies them to drive

a mechanical motor. This process is similar to how the human body generates me-

chanical movement; the brain can provide electrical impulses that are instructions, but

it requires the muscles to perform mechanical force. The muscle represents both the

H-bridge and the motor combined. The H-bridge takes in the small electrical signal

and translates it into high power output for the mechanical motor. This document

will cover the electronic principles in creating the H-Bridge portion of the ”muscle”.

If the reader requires further information consult the references included at the end of

the document.

2.1 Direction Control - H-Bridge Topology

Most DC Motors can rotate in two directions depending on how the battery is con-

nected to the motor. Both the DC motor and the battery are two terminal devices that

have positive and negative terminals. In order run the motor in the forward direction,

connect the positive motor wire to the positive battery wire and negative to negative.

However, to run the motor in reverse just switch the connections; connect the positive

battery wire to the negative motor wire, and the negative battery wire to the positive

motor wire. An H-Bridge circuit allows a large DC motor to be run in both direction

with a low level logic input signal.

The H-Bridge electronic structure is explicit in the name of the circuit - H -

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A High Power H-Bridge, Chapter 2: H-Bridge Principles Vincent Sieben

Bridge. The power electronics actually form a letter H configuration, as shown in

Figure 2.1. The switches are symbolic of the electronic Power MOSFETs which are

used for switching.

Figure 2.1: H-Bridge Topology

If it is desired to turn the motor on in the forward direction, switches 1 and 4

must be closed to power the motor. Figure 2.2 below is the H-Bridge driving the motor

in the forward direction.

If it is desired to turn the motor on in the reverse direction, switches 2 and 3 must

be closed to power the motor. Figure 2.3 below is the H-Bridge driving the motor in

the reverse direction.

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A High Power H-Bridge, Chapter 2: H-Bridge Principles Vincent Sieben

Figure 2.2: H-Bridge Topology - Forward Direction

Figure 2.3: H-Bridge Topology - Reverse Direction

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A High Power H-Bridge, Chapter 2: H-Bridge Principles Vincent Sieben

2.2 Speed Control - PWM Technique

The motor is controlled by the 4 switches above. For the speed control explanation

that follows only switches 1 and 4 will be considered because speed control is identical

in the forward and reverse direction. Say the switches 1 and 4 are turned on, the motor

will eventually run at full speed. Similarly if only switch 4 is turned on while switch

1 is off the motor stops. Using this system, how could the motor be run at 1/2 of the

full speed? The answer is actually quite simple; turn switch 1 on for half the time and

turn it off for the other half. In order to implement this system in reality, one must

consider two main factors, namely frequency and duty cycle.

Frequency: Using the switch example, the frequency would be how fast the switch

was turned on and off. If the frequency is too low (switch is changed slowly), then the

motor will run at full speed when the switch is on, and completely stop when the switch

is off. But if the frequency is too high, the switch may mechanically fail. In reality

there is no switch, but rather an electronic board named an H-Bridge that switches the

motor on and off. So in electrical terms; if the frequency is too low, the time constant

of the motor has enough time to fully switch between on and off. Similarly the upper

limit on the frequency is the limit that the H-Bridge board will support, analogous to

the mechanical switch. The maximum frequency of this H-Bridge Board is 500 kHz,

but the recommended frequency of the PWM for this board is 31.25 kHz.

Duty Cycle: The duty cycle is analogous to how long the upper switch (switch

1) remains on as a percentage of the total switching time. In essence it is an average

of how much power is being delivered to the motor. Duty cycle gives the proportional

speed control of the motor. Figure 2.4 is an example of 1/4, 1/2, and 3/4 duty cycles.

Effectively, these duty cycles would run the motor at 1/4, 1/2, and 3/4 of full speed

respectively.

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A High Power H-Bridge, Chapter 2: H-Bridge Principles Vincent Sieben

Figure 2.4: Pulse Width Modulation Used For Motor Control

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Chapter 3

Design Description

3.1 Turning On The Upper MOSFETS

This section will explain what the ”switches” above actually are in terms of electronic

components. The switches are power MOSFETs (transistors) that have certain proper-

ties that allow them to switch high currents based on an input signal. The MOSFETs

are used in two regions of operation; Cut-off mode and Saturation mode which cor-

respond to switched off and switched on respectively. In the H-Bridge case, to put

a MOSFET into the Cut-off mode, the input signal (Gate Voltage) to the MOSFET

must be grounded. However, to turn on the MOSFETs and put them into saturation

mode requires a more complicated process.

MOSFETS are three terminal devices with the terminals being the Gate, Drain,

and Source. In order to turn on the MOSFET into saturation mode the voltage at

the gate terminal must be approximately 12 volts higher than the voltage at source

terminal. Figure 3.1 illustrates the slightly more complicated process of turning on

the top MOSFETS.

The more complicated part; how can 36 volts be used at the Gate when the battery

voltage is only 24V? The MOSFET Driver chip solves this problem by using a Charge

Pump and a Bootstrap circuit.

3.1.1 MOSFET Driver Chip - HIP4081A

A MOSFET driver chip performs all of the following functions.

• Generate the VGS to turn on (saturate) the top N-Channel MOSFETS. This is

accomplished by two methods, a charge pump and a bootstrap circuit. Informa-

tion on both these methods can be found in data sheet for the HIP4081A, or in

the references at the end of this document.

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A High Power H-Bridge, Chapter 3: Design Description Vincent Sieben

Figure 3.1: Gate Voltage Problem With Top N-Channel MOSFETS

1. Charge Pump - Uses a set of internal diodes and capacitors to provide a

small amount of current to ensure that the top MOSFETS stay saturated.

2. Bootstrap Method - Uses a set of external diodes and capacitors to provide

a significant amount of current to turn on (saturate) the top MOSFETS

rapidly.

• Switches MOSFETS at high speeds. Since the MOSFETS must be switched

on and off very fast, 31.25 kHz, a significant amount of current must be used

to overcome the gate capacitance. The MOSFET Driver Chip can source the

current required to switch the MOSFETS rapidly.

• Acts as a Buffer to the logic input signals.

• Introduce a Dead Time to prevent Shoot-Through Current. This is topic is

discussed later in this document in section MOSFET Driver Dead Time.

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A High Power H-Bridge, Chapter 3: Design Description Vincent Sieben

3.2 Feedback EMF Reduction - Large Main Capacitor

The large main capacitors primary purpose is to suppresses transient spikes caused

by the motor. Often when the motor accelerates, decelerates, or stops suddenly, an

EMF ”feedback” voltage will spike on the main battery voltage. These spikes cause

micro controllers to reset and are harmful to most low level electronics. By placing a

filter capacitor in parallel with the battery, these feedback spikes can be reduced in

magnitude.

The reasoning behind this filter capacitor has its roots in basic electronics. One

of the laws from basic electronics states that voltage can not change instantaneously

across a capacitor; therefore, since the capacitor is parallel to the battery, the battery

voltage cannot change instantly. This results in a reduction of the feedback voltage

spikes generated by the motor.

3.3 Regenerative Current Circulation

Another law from basic electronics states that current cannot change instantaneously

through an inductor. Since the main motor coil is a large inductor, the current running

through the motor can only change gradually. Abrupt changes cause the feedback

voltage spikes mentioned earlier. As an additional feature to the main capacitor,

an RCC (regenerative current circulation) technique was implemented to reduce EMF

voltage spikes. Additionally, the RCC technique implemented redirects unused current

back into the battery, maximizing battery life.

Recall that when using the PWM technique, the upper switch is rapidly turned

on and off to create variable speed control, and the lower switch is left on. When

the motor is running at 1/2 speed, the top switch (switch 1) is switched on 1/2 the

time and it is switched off 1/2 the time. During the OFF part of the PWM cycle

(switch 1 - off and switch 4 - on), where does the current circulate? Remember this is

a large inductor and current cannot jump from a definite value to zero instantly!, see

Figure 3.2.

To solve this problem, the PWM technique will be refined to incorporate RCC. The

RCC technique involves turning on both bottom switches when the PWM is in the off

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A High Power H-Bridge, Chapter 3: Design Description Vincent Sieben

Figure 3.2: No RCC - During Off Portion Of PWM Cycle

portion of the cycle. This involves inverting the PWM signal that controls switch 1

and feeding it to switch 3. Essentially, when the top switch 1 is on, the bottom switch

3 is off, and when the top switch 1 is off, the bottom switch 3 is on. The inversion

technique is the same for the other side of the H-Bridge. The effect of RCC is shown

in Figure 3.3.

The following are logic equations for each switch based on input PWM (Speed)

and input DIR (Direction):

Switch 1 = PWM • DIR (3.1)

Switch 2 = PWM • DIR (3.2)

Switch 3 = Switch 1 = PWM + DIR (3.3)

Switch 4 = Switch 2 = PWM + DIR (3.4)

When implementing the RCC, there is an inherent danger; what if the top switch

1 and bottom switch 3 are on at the same time, even for a small amount of time?

The battery will be shorted out and the H-Bridge will literally blow up. This is called

Shoot Through and it is shown in Figure 3.4.

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A High Power H-Bridge, Chapter 3: Design Description Vincent Sieben

Figure 3.3: RCC Technique - During Off Portion Of PWM Cycle

Figure 3.4: Shoot Through Current - Danger Of RCC

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A High Power H-Bridge, Chapter 3: Design Description Vincent Sieben

3.4 Shoot-Through Protection

To prevent the condition that causes shoot-through, a dead time is introduced as shown

in Figure 3.5. Switch 2 is off and Switch 4 is on in Figure 3.5.

Figure 3.5: Dead Time - Timing Relationships For Switches

The Dead Time is accomplished by delaying only the rising edge of the PWM as

shown in Figure 3.5. The falling edge passes through the dead time circuit unaffected.

The MOSFET Driver HIP4081A adds a small amount of dead time. However, to

be on the safe side, an additional dead time circuit was designed as shown in Appendix

- Schematic. The dead time circuit will add approximately a 1us delay to the rising

edges of the PWM, which ensures that the MOSFETS are never turned on at the same

time.

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Chapter 4

Pictures of Final PCB

Figure 4.1: Top of PCB

Figure 4.2: Bottom of PCB

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Chapter 5

Future Improvements

• Reduce PCB Size. Possibly incorporate two H-bridges on one board with a micro

controller.

• Switch the bottom MOSFETS instead of top MOSFETS.

• Possibly eliminate the voltage regulators and use Zener diodes instead.

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Bibliography

[1] 4QD. Ncc70 reference manual. Technical report. URL: http://www.4qd.co.uk/.

[2] Intersil. Hip4081a data sheet. Technical report. URL:

http://www.intersil.com/.

[3] International Rectifier. Power mosfet application notes and data sheets. Technical

report. URL: http://www.irf.com/.

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Appendix A

Final Schematic

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1 2 3 4 5 6

A

B

C

D

654321

D

C

B

A

Scale Sheet

Size FCSM No. DWG No. Rev

1 of 1

Tabloid 1.0 2.0

Vincent SiebenPhone: (780) 475 - 2906Email : [email protected]: 14305-82 St. #11, Edmonton, AB, T5E 2V7, Canada

High Power H-Bridge Final Design - ARVP - University of Alberta

VC V12

+ C12200uF

+ C2100uF

12

POWERSUPPLYCON2 VIN VOUT

ADJ

23

1

VOLTREGLM1084

R1100

R2820

2

1

3

Q1IRF1405

2

1

3

Q2IRF1405

2

1

3

Q3IRF1405

2

1

3

Q4IRF1405

VC VC

1 2

M1CON2

D31N4148

R10 22

D41N4148

R11 22

D51N4148

R12 22

D61N4148

R13 22

A_HS B_HS

PWM

SD

R91k

VCC

R810k

R710k

123456

INPUT

CON6

DIR

VCC

DIR

PWM

DIR

PWM_INV

DIR_INV

PWM

DIR

SD

A_LI

B_LI

BHBBHIDISVSSBLIALIAHIHDELLDELAHB

BHOBHS

BLSVDDVCCALSALOAHS

123456789

10

2019

17161514

1213

AHO 11

BLO18

U2

HIP4081A

D2MUR160

V12

+ C31uF

V12

R6100k

R5100k

D1MUR160

+

C41uF

SD

A_LIB_LI

B_HO

B_LO

A_LO

A_HO

B_HO

B_LO

A_LO

A_HOA_HS

B_HS

B_HO

B_LOA_LO

A_HO

B_HI

A_HI

2

31

UNORA

SN7402N

5

64

UNORB

SN7402N

8

910

UNORC

SN7402N

11

1213

UNORD

SN7402N

1 2

UNOTA

SN7404N

3 4

UNOTB

SN7404N

DD1

1N4148

RD1 4.7k

CD1470pF

7

61

123

A

UCOMPA

LM339N

RD2470

VCC

VCC

VCC/2

DD2

1N4148

RD3 4.7k

CD2470pF

5

42

312

B

UCOMPB

LM339N

RD4470

VCC

VCC

VCC/2

DD3

1N4148

RD5 4.7k

CD3470pF

9

814

123

C

UCOMPC

LM339N

RD6470

VCC

VCC

VCC/2

DD4

1N4148

RD7 4.7k

CD4470pF

11

1013

312

D

UCOMPD

LM339N

RD8470

VCC

VCC

VCC/2

VCC

VCC/2

RD94.7k

RD104.7k

2

1

3

Q5IRF1405

VC

2

1

3

Q7IRF1405

VC

2

1

3

Q6IRF1405

2

1

3

Q8IRF1405

VC VCCVin1

GN

D2

Vout 3VOLTREG3 LM7805

+ C300100uF

A_HI

B_HI

A_LI

A_HI

B_LI

B_HI

5 6

UNOTC

SN7404NCDelay1uF

A_HO_G

A_LO_G B_LO_G

B_HO_G

High Power H-Bridge Motor Controller

Dead Time Tuning Circuit

MOSFET Driver Circuit

H-Bridge Dual MOSFET Configuration

Power Regulation Input Header

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Appendix B

Final PCB

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A High Power H-Bridge, Chapter B: Final PCB Vincent Sieben

Figure B.1: Final H-Bridge PCB Top Solder Mask Layer (Not to Scale)

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A High Power H-Bridge, Chapter B: Final PCB Vincent Sieben

Figure B.2: Final H-Bridge PCB Top Layer

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A High Power H-Bridge, Chapter B: Final PCB Vincent Sieben

Figure B.3: Final H-Bridge PCB Bottom Layer

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Appendix C

Bill of Material - BOM

Part Type Designator Footprint Description1N4148 D4 SDIODE Diode1N4148 D3 SDIODE Diode1N4148 D5 SDIODE Diode1N4148 D6 SDIODE Diode1N4148 DD4 SDIODE Diode1N4148 DD3 SDIODE Diode1N4148 DD1 SDIODE Diode1N4148 DD2 SDIODE DiodeMUR160 D1 DIODE0.4_V DiodeMUR160 D2 DIODE0.4_V Diode1k R9 resistor resistor4.7k RD5 resistor resistor4.7k RD10 resistor resistor4.7k RD3 resistor resistor4.7k RD9 resistor resistor4.7k RD7 resistor resistor4.7k RD1 resistor resistor10k R8 resistor resistor10k R7 resistor resistor22 R10 resistor resistor22 R11 resistor resistor22 R13 resistor resistor22 R12 resistor resistor100 R1 resistor resistor100k R6 resistor resistor100k R5 resistor resistor470 RD2 resistor resistor470 RD4 resistor resistor470 RD6 resistor resistor470 RD8 resistor resistor820 R2 resistor resistor1uF C4 cap5mm Capacitor1uF C3 cap5mm Capacitor1uF CDelay ceramic Capacitor100uF C300 cap5mm Capacitor100uF C2 cap5mm Capacitor470pF CD1 ceramic Capacitor470pF CD3 ceramic Capacitor470pF CD2 ceramic Capacitor470pF CD4 ceramic Capacitor2200uF C1 caplarge CapacitorCON6 INPUT jtag ConnectorHIP4081A U2 DIP-20 FET DRIVER ICIRF1405 Q5 TO1 HEXFET Power MOSFETIRF1405 Q3 TO1 HEXFET Power MOSFETIRF1405 Q1 TO1 HEXFET Power MOSFETIRF1405 Q7 TO1 HEXFET Power MOSFETIRF1405 Q8 TO2 HEXFET Power MOSFETIRF1405 Q6 TO2 HEXFET Power MOSFETIRF1405 Q4 TO2 HEXFET Power MOSFETIRF1405 Q2 TO2 HEXFET Power MOSFETLM339N UCOMP DIP-14/D19.7 Quad Differential ComparatorLM1084 VOLTREG TOG Voltage RegulatorLM7805 VOLTREG3 TOG Voltage RegulatorSN7402N UNOR DIP-14/D19.7 Quadruple 2-Input Positive-NOR GateSN7404N UNOT DIP-14/D19.7 Hex Inverter

Figure C.1: Bill of Materials

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