GOFORD GT52N10 Description General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application Schematic diagram Marking and pin assignment DFN 5x6 GT52N10 VDSS RDS(ON) @10V (typ) ID 100V 6.2 Ω 48A RDS(ON) @4.5V (typ) 8.5 m Ω m Page 1 HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466 · Trench Power MV MOSFET technology · Low R DS(ON) · Low Gate Charge · Optimized for fast-switching applications · Synchronus Rectification in DC/DC and AC/DC Converters · Industrial and Motor Drive applications Symbol V DS V GS I DM E AS 105 T J , T STG Symbol t ≤ 10s 12 Steady-State 32 Steady-State R θJC 1.4 W W 75 30 8.3 6.6 Power Dissipation A T A =25°C P DSM T A =70°C Power Dissipation B T C =25°C T C =100°C P D A Gate-Source Voltage A Avalanche energy L=0.3mH C mJ 105 Continuous Drain Current T A =25°C T A =100°C I DSM 22 18 °C/W Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 15 °C/W °C/W 40 1.67 R θJA Parameter Maximum Units Thermal Characteristics Drain-Source Voltage Junction and Storage Temperature Range °C -55 to 150 100 ±20 V Pulsed Drain Current C A V Continuous Drain Current G T C =25°C T C =100°C I D 48 43 Maximum Units Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted (Package Limited)
5
Embed
GOFORD GT52N10 - dzsc.comfile2.dzsc.com/product/17/05/08/1125801_141932716.pdf · ·Synchronus Rectification in DC/DC and AC/DC Converters ·Industrial and Motor Drive applications
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
GOFORD GT52N10
Description
General Features
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
A. The value of RθJA is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends onthe user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction‐to‐case thermal resistance, and is more useful in setting the upper dissipationlimit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction‐to‐case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR‐4 board with 2oz. Copper, in a still air environment with TA=25°C.