Future Trends in Nanocarbon Materials Nanohiilet ja painettava elektroniikka Prof. Dr. Esko I. Kauppinen NanoMaterials Group Department of Applied Physics Aalto University School of Science [email protected]New Carbon Materials Research Initiative October 26, 2012 @TEKES, Helsinki, Finland
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Future Trends in Nanocarbon Materials Nanohiilet ja painettava elektroniikka
Carbon nanotube thin-film: High carrier mobility, Flexibility and stiffness, Simple and fast process.
RFID tag
Sunchon Nat. Univ.
& Rice Univ.
(Radio Frequency Identification)
Requirements to material and devices for flexible electronics
Fabrication on plastic substrate Low temperature process Low-cost fabrication Atmospheric pressure process High-speed printing method Roll-to-roll manufacturization
Silicon and ITO:Hard, Fragile Plastic: Flexible, Elastic
Hewlett-Packard
Comparison of various traditional thin-film transistors for display applications
Material Mobility (cm2/Vs)
Method (Process temp.)
Flexibility Large area
Cost Stability
Poly-Si 30~300 Vac. CVD (500C)
Bad Fair High Very good
Amorphous-Si 0.5~1 Vac. CVD (> 200C)
Bad Fair High Very good
Oxide (InGaZnO)
1~10 Vac. Sputter (R.T.~200C)
Good Fair Moderate Very good
Organic 0.01~10 Solution,
Sublimation (R.T.)
Good Very good
Low Bad
Additional important parameter: on/off ratio – must be larger than 1 000 000 = 106
(ratio of transistor on-current to off-current)
Comparison of SWCNT and graphene for for flexible electronics applications
Material Mobility (cm2/Vs)
On/off ratio
Manuf. method (Process temp.)
Flexibility Cost Stability
Individual SWCNT on the subtrate
50 000 – 200 000
108 CVD (600-900C)
Very good High Very good
SWCNT thin film on the subtrate
100 - 2000 105 - 107
Depositon from solution or gas phase (ambient)
Very good Low Very good
Free-standing graphene single
crystal
100 000 - 1 000 000
2-100
Exfoliation (not an industrial
manufacturing process)
Very good Very high Very good
Graphene thin film on the subtrate
1 000 – 5 000
2-100
CVD (900-1050C)
Very good High Very good
On/off ratio for digital electronics and display backplane must be larger than
1 000 000 = 106 – graphene is not suitable for these applications
Solid process - also for graphene:
Liquid process: Aalto/Canatu dry
gas-phase process :
DGU: Hersam group
Gel: Kataura group
Spin coating/ liquid printing
Direct Dry Printing (DPP)
e.g. Rogers group
Fabrication methods for flexible CNT device
Large-area synthesis of graphene by
CVD Set-up for the CVD growth 5 x 5 cm2 transferred graphene on Si
Raman and optical spectroscopy
Dept. of Micro- and
Nanosciences,
Aalto University
Prof. Harri Lipsanen
Micronova Research Center,
in collaboration with
VTT Nanoelectronics
1 µm
W. Kim, P. Pasanen, J. Riikonen, H.
Lipsanen Nanotechnology 23 (2012)
115201
Graphene rectifier
Transparent graphene on rigid or
flexible substrate Graphene transfer
to new substrate
Polymer
support film on
graphene
Graphene
on copper
Copper foil or
Cu/SiO2/Si wafer
Mobility ~ 2000
cm2/Vs
RF Field-effect transistor (on CVD graphene)
On/off ratio ≈ 2 Cut off frequency ≈ 80 MHz
(Measured by J. Anteroinen, Circuit design group)
7 x 5 graphene FETs array 1 µm x 50 µm channel dual gate FET
Inverter (on CVD graphene)
Implemented configuration
1 µm x 50 µm channel FETs
Graphene transistors on wafers & on flexible substrates
SWCNTs in the
reactor gas
Synthesis
Control of SWCNT
properties Patterned/non-
patterned
Deposition Thin Films
Aalto University Novel dry, direct CNT film deposition method: DPP – Direct Dry Printing
Industrial manufacturing – Canatu Oy
High Crystalliny as observed with 80 kV Cs-TEM: 2 individual tubes with (17,6) chirality –
diameter 1.60 nm, chiral angle 17.2 degrees - and with UHV-LT STM
Collaboration with
Prof. A. Kirkland
Oxford Univ. UK
25.1.2010
The Finnish nanotechnology based electronic component company Canatu Oy
was announced as one of the winners of the Red Herring Global 100 award at
the award ceremony in Laguna Niguel, California.
Canatu Oy's business is the production and sales of a new class of versatile carbon
based components based on carbon nanotubes and our novel NanoBud™
nanomaterial. These components improve the performance and reduce the cost of
optical, energy generation and storage and electrical devices while, simultaneously