Frontiers of Nanoelectronics Metrology at NIST OR: Where’s the Beef? David Seiler, Chief Engineering Physics Division, National Institute of Standards and Technology July 13, 2016 “The National Institute of Standards and Technology (NIST) … lends its metrology expertise. Advancing nanoelectronics requires measuring structures with atomic accuracy, characterizing new materials and molecules, and even measuring the signals from individual electrons – if we can't measure it, we can't make it.” - SIA_online.ORG 1 [email protected]
24
Embed
Frontiers of Nanoelectronics Metrology at NIST · Frontiers of Nanoelectronics Metrology at NIST OR: ... technology that could alter the dynamic of market ... •Advanced Microscopy
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Frontiers of Nanoelectronics Metrologyat NIST
OR: Where’s the Beef?
David Seiler, Chief
Engineering Physics Division, National Institute of Standards and Technology
July 13, 2016
“The National Institute of Standards and Technology (NIST) … lends its metrology expertise. Advancing nanoelectronics requires measuring structures with atomic accuracy, characterizing new materials and molecules, and even measuring the signals from individual electrons – if we can't measure it, we can't make it.”
• Some Examples of Frontiers of Nanoelectronics Metrology at NIST• Optical Spectroscopy
• Graphene, 2D Materials, CNTs
• Defect Detection and Identification
• Advanced Microscopy
• Devices and Characterization
• Flexible Electronics
• Summary
2
Advanced Electronics Manufacturing(Yes, I Know I am “Preaching” to the Choir)
• Electronics is at the heart and soul of our modern society.
• The electronics industry and its impact on our society is huge.
• The industry is, of necessity, continually moving to new devices based upon new materials and structures, as well as new physics.
• Measurement advances are needed to help enable future electronics
• The measurement challenges are increasingly difficult & the needs exploding.
• Measurement needs are often too large and complex for one company to solve and so precompetitive cooperation is often desired
3
“Somewhere, something incredible is waiting to be known.”Carl Sagan (1934 – 1996)
What Lies Ahead for Nanoelectronics?
4
AND What Difference Does the Future of Nanoelectronics Make?
• Why does investment in nanoelectronics research matter? Nanoelectronics is a game-changer for the industry and the country – a disruptive technology that could alter the dynamic of market leadership. The current chip technology, which has been used for four decades, is predicted to reach its scaling and power dissipation limits by 2020. Nanoelectronics holds the promise of a successor technology. The country that discovers this breakthrough research is likely to reap the related economic benefits. The U.S. federal government’s research resources, specifically the NSF and NIST are critical to this effort.
American Competitiveness: The Role of Research and Development Testimony before the U.S. House Committee on Science, Space, and Technology
Richard K. Templeton, Chairman, President and CEO Texas Instruments Incorporated, February 6, 2013
5
NIST – Who Are We and What Do We Do
• Founded in 1901, NIST is a non-regulatory federal agency within the U.S. Department of Commerce. NIST's mission is to promote U.S. innovation and industrial competitiveness by advancing measurement science, standards, and technology in ways that enhance economic security and improve our quality of life.
• NIST carries out its mission through the NIST Laboratories, who conduct world-class research, often in close collaboration with industry. That mission helps advance the nation's technology infrastructure and helps U.S. companies continually improve products and services.
• So how does a measurement agency support innovation? If you know how to measure things, you can begin to learn how to control them, design them, shape them, and eventually manufacture them. And that’s one aspect of technological innovation.
• The truth of the matter is that measurements permeate every aspect of our lives.
• NIST has a long history working with the semiconductor/electronics industry in helping advance measurements and standards that help enable innovation and economic competitiveness.
60 Manufacturing Extension Centers10 joint institutes/Centers of Excellence
NIST labs, $690MIndustrial Technology Services, $155 MConstruction of Research Facilities, $119 M
People:Employees
& Associates
~3,400 Federal Employees~3,700 Guest Researchers & other NIST Associates ~400 NIST Staff on ~ 1,000 standards committees
Additional Resources~ $120 M from other government agencies~ $50 M from reimbursable services
NIST Impacts Advanced Nanoelectronics Throughout All Its LaboratoriesNIST’s Role: To develop innovative measurements and critical metrology infrastructure that enables a broad range of new devices and architectures for the U.S. electronics and information technology industries allowing them to break through technological barriers making possible critical innovations that will keep these industries competitive in the global economy.
Todays Frontiers of Nanoelectronics at NIST Talk Focused on:
Challenge: Science and Engineering at the Atomic and Molecular Level
9
• Nanoscale Science and Technology Involves the Atomic and Molecular Level• fundamental understanding of phenomena and materials at the nanoscale• fabrication and use of structures, devices, and systems that have novel
properties and functions because of their small size• control of matter and processes at the atomic and molecular level• Integration of nanoscale materials and structures into larger materials
components, systems, and architectures• 3D becomes critical
• Addressing the measurement challenges associated with atom-technology for ultimately scaled Si electronics • Dopant position and device variability• Atomic scale defects• Single-atom transistors
• Exploring innovative technologies to move beyond traditional CMOS devices
Band offsets of Tunnel FETs and alternate channel FinFETs
12
World Class Laboratory for Raman Spectroscopy of Graphene, 2D Materials, CNTs
13
ObjectiveConduct fundamental research to develop, validate, and advance the measurement science of Raman spectroscopy to determine the properties of novel nanomaterials.
Nanoelectronic Material Systems• Carbon nanotubes; high-quality, single-
wall and polymer-embedded multiwall• Graphene, 2D di-chalcogenides and
their heterostructures• Strain engineered nanomaterials• Conducting polymers
Uniqueness of NIST ApproachRaman spectroscopy is a widely used tool to characterize nanoelectronic materials, yet validated, quantitative studies are limited. NIST is working collaboratively within and with external partners (academia, industry and other international metrology institutes) to develop the measurement science needed to enable SI-traceable Raman spectroscopy and advanced Raman techniques to extract the information rich data. Outputs include designer facilities, publication and standards activities within ISO TC 229 nanotechnology. Below are examples of recent collaborators:
Unprecedented Raman Facilities and Capabilities• Resonance Raman – Tunable laser excitation throughout
the visible• Temperature dependent Raman (4 K to 400 K) for thermal
conductivity measurements• Raman mapping capabilities with diffraction limited spot
size• Low frequency Raman for monitoring phonons and layer
coupling • Hyphenated Raman Techniques:
• Magneto-Raman – Capable of collected Raman scatter while the sample is held at specific temperature and magnetic Field (0 to 9 T) in either Faraday or Voight geometry
• AFM-Raman – Co-located topography and chemical information with nanometer special resolution
• Device transport (under development) for in-operando Raman measurements at field and temperature
Frequency swept EDMR of SiC diode (200 Hz sweep rate)
• Major Accomplishments• Complete EDMR spectrometer/commercial wafer
probe station integration.
• World’s first demonstration of rapid-scan frequency-swept EDMR. on SiC MOSFETs.
14
Scatterfield Optical Microscopy for 3-D Nanostructure Imaging and Defect DetectionObjectives/Difficult Challenges
• Resolving critical issues in deep subwavelength linewidth and defectmetrology for the U.S. semiconductor industry.
• Enabling the world’s smallest multi-dimensional measurements of objects using optical imaging, providing quantitative information from scattered light images at resolutions previously thought impossible.
Major Accomplishments
• Rigorously fitting the full 3-D scattered light field to measure nanometer-scale topography for features sized less than l/25 with sub-nm parametric uncertainties (see figure).
• Revealing “killer” defects in semiconductor manufacturing through engineering of the illumination and collection paths.
• Combining multi-tool measurements into a monolithic, hybrid result using techniques that have been adopted by industry for metrology in high-volume manufacturing for current and future sub-10 nm sized devices.
Uniqueness of NIST Approach
• Quantitative Optical Microscopy, combining bright-field optical microscopy with fundamental physics-based modeling and simulation to realize fully optimized dimensional measurements.
• Assessing computationally how to optimize the optical scattering from patterned defects, tailoring the polarization and angular illumination for Defect Metrology; augmented with a world-class l=193 nm microscope.
• Pioneering the foundational statistics required to combine and optimize a variety of measurement methods to improve uncertainties, to as small as the width of a few atoms, called Hybrid Metrology.
Impact, Benefits, and Collaborations
• ITRI (Taiwan) – Our techniques “becoming commonplace in many new-generation advance process control …”
• Recognized as world-leaders in the hybrid metrology field. R&D 100 Award for “Quantitative Hybrid Metrology” (2013).
• Intel – [defect work] “… both fundamentally unique and technically important … helped spur industry wide interest.”
• Externally funded collaboration with a U.S. Semiconductor Manufacturer and additional collaborations with suppliers to the Semiconductor Industry.
Objectives/Difficult Challenges• Low cost, high-throughput, 3D
shape metrology • Sub-10 nm to over 100 mm targets• Sub-nm measurement resolution• Uses conventional microscopes.
Major Accomplishments• Sub-20 nm defect with l=546 nm• 3D shape with sub-nm resolution• Nanoparticle size• Sub 5 nm step height • Sub-7 nm CD (simulations)• HAR, TSV process monitoring• Sub-200 ms analysis time
Uniqueness of NIST Approach• Uses three-dimensional optical intensity data• Uniquely identifies the type of dimensional
variation • Does not require complicated optical
simulations for process control• Optical cross-correlation: nearly eliminated• Low-quality microscopes can be used• Can be used with isolated targets (no need for
repeated structures)
Impact, Benefits, and Collaborations
• ITRS 2013/2014• SEMI document for 3D S-IC structures• SEMATECH includes for memory / HAR /CD metrology
applications• SAMSUNG Electronics developed and applied for two
patents on TSOM• Highlighted by SPIE Newsroom and others• Collaborations: SEMATECH, Intel, Veeco, CEA/LETI
• Research and develop measurement techniques and standards for critical needs for SI traceable nanometrology, process and quality control [clear, concise]
• Provide dimensional calibrations from micrometers to 0.1 nm.
Major Accomplishments
• World-class performance (standard uncertainty) has been achieved in both step height (5 ×10-3) and pitch (6 ×10-4) interlaboratory comparisons.
• Sub-1 nm linewidth uncertainties (best in the world)• CD-AFM contour extraction methods for semiconductor dimensional
metrology (first in the world)• First principles fundamental understanding of cylindrical CD-AFM tip-
sample interaction (first in the world)
Uniqueness of NIST Approach• Fundamental SI traceable AFM dimensional metrology research and
development.• Dimensional metrology standards development and characterization.• Unique Specialized Instruments:
• Traceable Atomic Force Microscope (T-AFM)
• Critical dimension AFM: Dual axes AFM for advanced semiconductor 3D features. SI traceable through silicon lattice imaging.
Impact, Benefits, and Collaborations
• Accurate 3D metrology of semiconductor devices such as finFETs, and contours.
• Reference and hybrid metrology developed by NIST has been adopted by industry (based on NIST traceable AFM measurements)
• Calibration measurements for vendors underpin their metrology program and are transferred to hundreds of samples a year.
• Collaborators: Instrument and calibrations sample vendors, IC and tip manufacturers such as: ASM, Bruker AFM, IBM/GF, FEI, VLSI, Nanotools among others.
T-AFM: SI traceable AFM with integrated displacement interferometry. For characterizing nanoscale surface features and defects, and calibration artifacts. The only instrument of this type in the country.
Ultra Fast Electrical Test System for Resistive Random Access Memory (RRAM)
• Objectives/Difficult Challenges• Development of high speed characterization metrology
to study resistive random access memory (RRAM) devices.
• Controlling the fast forming transients, which determine the switching characteristics, are critical to commercializing this promising memory technology.
• Major Accomplishments• Custom program and verify algorithm implemented in
hardware - relationship between endurance and switching.
• Smart optimization of forming and switching conditions to maximize memory window.
• Forming energy metric developed to track filament viability.
• Uniqueness of NIST Approach• Compliance-free forming and switching of advanced RRAM
devices using ultra-short voltage pulses (picoseconds).
• In-house development of ultra-fast test systems to monitor and control transient resistance changes.
• Impact, Benefits, and Collaborations• Enable commercialization by drastically reducing device to
device variability.
• Collaborations with industry leading semiconductor companies to bring technique online.
Physical Properties of New Electronic Materials & DevicesObjective: Accurate mobility characterization for new electronic devices based on novel materials• There is an unprecedented worldwide effort to create
novel materials, e.g. organic, 2D, etc.• Charge carrier mobility remains a key parameter used to
identify and benchmark materials• Mobility is typically determined by building a field-effect
transistor (FET), but this approach is indirect and model dependent; yielding inflated device mobility
• Overestimates as large as 10X have been seen
Major Accomplishment: New measurement and model to disentangle charge injection and transport for FETs with non-ideal characteristics
Uniqueness: Classical FET models assume ideal device behavior; simple model corrections do not capture the physics
Impact: This work has reset mobility benchmarks and revealed the critical role of contacts on FET operation
• Innovative, practical, new tools & measurements are critical for advancing the future of nanoelectronics
22
“This is an amazing time to be a technologist. Just think of all the tools and components we have at our disposal--technology so powerful that our leverage is limited only by our imagination and creativity...We can look forward to a millionfold increase in the power of microelectronics...”
- Arno Penzias, vice president and chief scientist, Lucent Technologies, Bell Labs Innovations, 1999
Summary: NIST Measurements for Advanced Electronics Enable Future Innovations
23
Craig Barrett, formerly
President, Intel
Mark Melliar-Smith, formerly President
and CEO of SEMATECH
Dennis Buss, VP, Silicon Tech. Development, Texas Instruments
> 235 attendees> 295 attendees> 280 attendees
Some Keynote Speakers
Bob Helms, formerly
President and CEO of SEMATECH
> 200 attendees
Michael Polcari, President and CEO
of SEMATECH
> 250 attendees > 230 attendees
Mark Durcan, COO of Micron
Proceedings Document Metrology Advances
> 175 attendees
Tze-Chiang (T.C.) Chen, IBM Fellow and VP,
Science & Technology
Michel Brillouet, Senior Advisor,
CEA-LETI
> 145 attendees > 165 attendees
Mike Mayberry, VP, Intel
Archived Papers and Talks Available on-line:www.nist.gov/pml/div683/conference/archives.cfm
> 140 attendees
Klaus von Klitzing, Max-Planck-Institut FKF
Focal Point for Frontiers of Characterization and Metrology for Nanoelectronics: A Major Conference Held Every Two Years
2017 Frontiers of Characterization and Metrology for Nanoelectronics International Conference
• March 21 – 23, 2017 at the Monterey Marriott, California• Committee includes leaders from NIST, Intel, Texas Instruments, CEA-Leti,
NSF, Micron, Global Foundries, TSMC, and more!• Interested in advancing the next frontiers of characterization and
metrology?• Join the organizing committee• Organize a tutorial session• Suggest critical frontier areas for the conference to highlight• Submit a paper
For more information contact [email protected]• Or see me after the talk