1/ 24 Fixed-gain CMOS Differential Amplifiers for the 40 K to 390 K Temperature Range Vratislav MICHAL , Alain J. KREISLER and Annick F. DÉGARDIN Paris Electrical Engineering Laboratory (LGEP), Gif sur Yvette, France Supélec; CNRS UMR 8507; UPMC - Univ Paris 06; Univ Paris Sud 11 Geoffroy KLISNICK, Gérard SOU and Michel REDON Electronics and Electromagnetism Laboratory (L2E), UPMC - Univ Paris 06 , 4 place Jussieu, Paris, France Research supported by a Marie Curie Early Stage Research Training Fellowship of the European Community’s Sixth Framework Programme under contract number MEST-CT-2005- 020692
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Fixed-gain CMOS Differential Amplifiers for the 40 K to 390 K Temperature Range
Fixed-gain CMOS Differential Amplifiers for the 40 K to 390 K Temperature Range. Vratislav MICHAL , Alain J. KREISLER and Annick F. DÉGARDIN Paris Electrical Engineering Laboratory (LGEP) , Gif sur Yvette, France Supélec; CNRS UMR 8507; UPMC - Univ Paris 06; Univ Paris Sud 11 - PowerPoint PPT Presentation
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Fixed-gain CMOS Differential Amplifiers for the
40 K to 390 K Temperature Range
Vratislav MICHAL, Alain J. KREISLER and Annick F. DÉGARDINParis Electrical Engineering Laboratory (LGEP), Gif sur Yvette, FranceSupélec; CNRS UMR 8507; UPMC - Univ Paris 06; Univ Paris Sud 11
Geoffroy KLISNICK, Gérard SOU and Michel REDONElectronics and Electromagnetism Laboratory (L2E), UPMC - Univ Paris 06 ,
4 place Jussieu, Paris, France
Research supported by a Marie Curie Early Stage Research Training Fellowship of the European Community’s Sixth Framework Programme under contract number MEST-CT-2005-020692
Vratislav Michal - Wolte 8, 22-25July 2008, Ilmenau 2/24
MEASURED PARAMETERS TYPE I AMPLIFIER TYPE II AMPLIFIER
Operating supply voltage 4.1 V to 5.5 V 3.6 V to 5.5 V Quiescent bias current 2.1 mA 1.3 mA – 3dB bandwidth @ 290 K 10 MHz (GBW=1GHz) 4 MHz @ 5 V Input noise @ 290 K 5 nV/Hz½ 5 nV/Hz½ Input noise @ 77 K 2 nV/Hz½ 3 nV/Hz½ Gain @ 290K 39.85 dB 39.3 dB @ 5 V Δ Gain 270 K ÷ 390 K – 0.12 dB – 0.5 dB @ 4 V Gain error @ 77 K – 1.2 dB – 1.3 dB @ 4 V Tot. harm. distortion @ Vout = 0.3 Vpp 1 % 0.03 %
Vratislav Michal - Wolte 8, 22-25July 2008, Ilmenau 21/24
V.2 Summary
Two amplifiers, based on different techniques of gain setting, have been designed, fabricated and characterized by measurements in a wide temperature range.
Both amplifiers exhibit very good performances, competitive with or superior to the industrial state-of-the-art.
Small size and low consumption make them ideal as versatile blocks for VLSI integration.
Wide temperature range operation demonstrates robustness of the design.
Vratislav Michal - Wolte 8, 22-25July 2008, Ilmenau 22/24
V.3 PCB test board with integrated ASIC
Vratislav Michal - Wolte 8, 22-25July 2008, Ilmenau 23/24
Appendix I: Differential (type I) amplifier designed for 40dB voltage gain
IL
vin+
MB2
VSS
VDD
Ib=500µA
MB3
MB4 MB5 MB6
MD1MD2
MC2 MC2
M1
M2
M3 M4
M5
MO1
MO2
MB1
IMIM
IB/2 IB/2
vbias
vout
vin-
IB 400/8µ
200/8µ
38/5µ15/5µ
38/5µ 15/5µ
15/5µ
100/5µ100/5µ
600.5/8µ
2360/2µ2360/2µ
315/8µ
500/8µ
501/8µ 501/8µ
1000/2µ
Vratislav Michal - Wolte 8, 22-25July 2008, Ilmenau 24/24
Appendix II: CMOS AMS 0.35µm realization of type II amplifier