Fabrication and Characterization of GFET

8/10/2019 Fabrication and Characterization of GFET

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II

E

. F ,

,

. I ,

(FET). F KTH FET (GFET)

90 . A

O (A2O3) K (ALD).

B

+5 V. A 20 A2O3 ,

, 14 V. F,

. T

.


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IV

I , D. M L,

. H

. I

.

I P M , ,

KTH. A, I

.

I P CM

, . I D.G M , D. PE H

, D. A S R S

R S, D. H R .

M T A S .

S V G, R G, C H

. I M M

.

I M M, M K, S R, O G,L L, B B, E D L .

I .

E I , N,

.


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V

A .................................................................................................................................................. IIA ................................................................................................................................. IV

1. I ........................ ...................... ............................ ................... ............................ ........... 1

2. G........................................ .............................. ..................... ........................... ................... 3

2.1. G P ....................... ...................... ............................... ................... ................. 3

2.2. G A ........................ ........................ ........................... .......................... ........ 5

2.3. G P M ..................... ............................ .................... ........................... 6

2.3.1. M ..................... ........................... ........................ .......................... ... 6

2.3.2. E G S C S C ............................... ................... ........... 7

2.3.3. C V D................................... .............................. .................... ........ 7

2.3.4. S A S ......................... ............................ ................... ........... 7

2.4. G ......................... ............................ ................... ...................... 7

2.4.1. M D GFET .................. .............................. ................. ......................... 8

2.4.2. CV C GFET ........................ ............................ .................... ..... 9

3. F .......................... ...................... ............................ ................... ............................ ......... 11

3.1. G P .......................... ........................ ........................... .......................... ...... 11

3.1.1. S ....................... .......................... ......................... .......................... 11

3.1.2. G ......................... ............................ ................... ......... 12

3.2. D F ........................... ............................ ....................... ........................... ......... 13

3.2.1. D .......................... ...................... ............................ .................... ........................... . 14

3.2.2. E L (EBL) ...................... ............................ .................... ......................... 15

3.2.3. S D M C ...................... ............................... ................... ............ 15

3.2.4. H ALD ...................... ............................ ................... ......... 16

3.2.5. G E............................................. ........................... .................... .................... 18

3.3. S ........................ ...................... ............................ ................... .............................. .... 19

4. C .......................... ...................... ............................ .................... ........................... . 20

4.1. R S ....................... ...................... ............................... ................... ............... 20

4.2. C B D ......................... ............................ ................... ............ 22

4.2.1. U B GFET ..................... ............................ ...................... .................... 24

4.2.2. B GFET A2O3 ......................... ....................... ........................... . 27


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VI

4.3. M E: L ...................... .............................. .................... ...... 29

4.3.1. S ............................ ............................ ....................... ........................ ...... 29

4.3.2. B B ....................... ............................ ................... ......... 33

4.4. C ..................... ............................ .................... ................. 34

5. C ........................... ...................... ............................ ................... ............................ ......... 36

R ............................................................................................................................................ 38


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1

1.

F M L

I C (IC),

. H, ,

. M

. A ,

1

2.

F 2004,

. P,

, . A

,

. T

. I

3 .T

2D

4.

F 5

CMOS . Y,

. O ,

. S,

.


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3

2.

F , 8. H,

2D 3D . G

. T

, , , .

2.1.

G 2 (F. 2.1)

. T

2004 G N 1. S2

9. T 1.42

Figure 2.1: sp2and p orbitals of

carbon atoms in graphene [2].


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4

. T

,

.

G A B

(F. 2.2). T

K , D , (F. 2.2 2.2).

T D , . T,

D E

D 10.

2.2: ) A B. ) B . ) D B 9.

G D

(21),

F .


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5

(21)

W 10

F 8. S, , M D F

11,12.

T

. C 10.

A, H , 15000 2/V.

SO2 11, 27000 2/V. 13 200000 2/V.

3,14. H, ,

15.

O

16, H 17,

18.

2.2. A

D ,

. H,

, . I ,

19,20.

O , RF

2. T 100 GH

240 21.

I ,

. F , C 108

A/2, ,

22,23. T

24. F ,


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6

25.

A , ,

26,27.

F, , , ,

(NEMS) 28 29,30.

2.3.

I N . 1,

. A

,

. T

,

, .

2.3.1.

G V D W . A , S T,

.

2.3: , , 90 . .


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7

N,

90 300

2. A , . I ,

,

, 2.3.

2.3.2. E C C

T

(0001) 1300C

31,32. S , ,

, 20 26. A

,

.

2.3.3. C D

I , N, C, P, I R

. U

,

3335. S

2. CVD

,

36.

2.3.4. A

I , T

37. D

38. A

,

36.

2.4.

E N

. 1. A ,

(GFET) . I ,


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8

S/SO2

. H,

, 2007 39.

2.4.1. D E

W ,

. T

40. I ,

/

(RIP) 41. T

F ( 2.4)42.

2.4: 42

L . T,

. H

41,

. U GFET SO2, RIP

43.

O , GFET

6. A

, ,

(ALD)

6. Y,


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9

44 7 ALD

. S ALD ,

P 6.

2.4.2. C C E

F 2.5 (GFET) 2.

B , GFET

D . I , GFET

. H,

. A,

45.

2.5: 2.

I , GFET

46,47. F , GFET

MOSFET. I , (V


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11

3.

I ,

S/SO2. S

, A2O3

(ALD). I , .

3.1.

3.1.1.

A

. T,

. I , 90

99 .

I , . T

. T

(F. 3.1) 0.5 0.5

.

A (SPR 700 1.2), (XLS

7500/2145 ) .


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12

3.1: EB .

I , 100 T

(P PAK 600 C S) . T

(F. 2.2).

3.2: EB

T, (D DFD640 ) 0.5 X 0.5 . B, ,

SO2.

3.1.2.

G

. T,

. A,


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13

(. 3.3). R

, .

3.3: ( ).

.

3.2.

D

, , ,

. T 3.4.


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14

3.4: E , ) , ) (A), ) D /A , ) , ) A23 AD, ) (A), ) D

/A , ) .

3.2.1.

B ,

ACAD . I ,

.

F 3.5 .

3.5: , ) , ) .

D GFET , .

F / , ,


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15

(. 3.5.). S,

(. 3.5.).

3.2.2. ()

R EBL GFET

. O

. A 200 PMMA (A2) EBL ,

R T 150 SEM & E . T

M (MIBK) F I (IPA). F 3.6

.

3.6: , 30 B.

3.2.3.

W 5/40 T/A (PVD). T

SO2. F 3.7

.

3.7: .


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16

N GFET

. A , .

3.2.4.

A ,

. H

, . A L

D (ALD) 6. S

ALD (BENEQ TFS 200, 2.8) A2O3 .

3.8 AD .

A (ALD)

49. A 3.9.,

/ ALD .

1) R (trimethylaluminum, in case of Al2O3 deposition)

. T

.

2) R (trimethylaluminum) (M)

.


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17

3) P ( ) . T

.

4) T .

R . T

3.9..

3.9: ) A 23 , , A , 2 ,

(..). ) C AD 50.

H, , ALD

. U

ALD 6.

S, 34 A ,

. T, ALD

A2O3


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18

.. A 3.10, 300 200C

30 A2O3.

3.10: A23 A 200C 51.

3.2..

F EBL , .

R 200 PMMA OPTI SST20 . F (

3.5).

T , 5/40 T/A

P PAK 600 C S, A. F,

GFET 3.11. 3.11.

.


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19

3.11: E .

3.3.

G S/SO2

99

. B , ,

EBL . T

/ . T/A PVD

. H A2O3

ALD. O 3.12.

3.12: E

I

.


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20

4.

T

(GFET) 3. R

. T

K 4200SCS

. A,

ALD .

4.1.

R , ,

. I ,

R .

R

52. S , ,

, R . H, R H LRAM

GFET.

F 4.1 R S ,

2. T R ;

1580 1 2 (G ), (2D )

2700 1 53. T 2D ,

52

53.


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21

4.1: , ; 2.

W H LRAM, A+

(=514.5 ). T (

. 4.2) . T R 4.2 G

1580 1, 2D 2700 1. C

R 4.1, .

4.2: 2D . . .


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22

I A2O3 , R

. I R

4.3. T G 2D R . I

. I ,

1350 1 (D)

.

: A23 .

4.2.

A EBL ,

. F 4.4 GFET S/SO 2

.

4.4: D E . /2 ; A23 A/ /


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23

4.5: ) B E . ) .

F 4.5 20

A2O3 , 5.2 . A ,

. A, (. 3.3) (D P) 14 V. M

.

F 4.5 15 V

+15 V . T

GFET . A,

( )

4.5. W , ;

. C 103 A,

.

I , GFET,

A2O3, . A,

.


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31/48


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26

(45)

A 1.2 5.2 11016 2 55 2/V. 193 2/V..

H, ,

54. A

C

. T,

, 45. A ,

47.

(46)

(47)

F , 4.8 1.2

. T 22 2/V. 110122.

T 20 90 2/V.

.

4.8: . .


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27

4.2.2. 23

A , A 2O3 . A

A ,

ALD. T

A2O3 . F 4.9

( )

( ) A2O3.

4.9: B () A23(). ) =1.2 , ) = 5.2 .


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28

D A2O3

. F, F. 4.9,

. S / , A2O3

.

T (

) . T A2O3

/A2O3

. I , D

( 5 V 14 V ),

/

SO2 .

T, . I

,

, . T

.

F, . I

/ , 40. T 4.1

.

41: .

()

()

(V)

C

(F/2)

(S)

U

(S)

W H

(2/V.)

U

(2/V.)

W H

1.2 3.3 50 3.5 1 107 5.66 108 22 12

5.2 4.4 50 3.5 1.2 107 5.23 108 80 36


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29

4.3.

4.3.1.

T

. A,

. V

,

. S

, .

C 47, :

(47)

-30 -25 -20 -15 -10 -5 0 5 10

0,2

0,4

DrainCurrent(A/m)

Back Gate Voltage (V)

L=1.2m

L=1.2m

L=5.2m

Vd= 60 mV

Vd= 30 mV

4.10: D , , 30 () 60 ().

H,

. F 4.10

, . T 42


36/48

30

. T /

. T

.

O , ,

/ . I ,

.

F, 34.8 K (. 4.11). T,

(. 4.11) 33.3 K

. F,

,

( 4.11). F (

) 2 K, 1.6 K/.

T 33 K .

4.11: ; ) ; ) ; )

H . T

. F 4.12

SEM .

C 4.12,

(V) 48:


37/48

31

(48)

W RC , R , V

.

4.12: A E. .

F 4.13

V=50 V. T R= 33 K

.

4.13: () , .


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32

B V V . 47, /

(. 4.14). T 30 K

.

4.14: . B .

I , ,

. A ,

, .

H, , 1500

2/V..

F,

. I , . Q ,

,

54. T

.


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33

4.3.2.

A ,

90 SO2 . I

. I

, .

W HF

. T 100 A ,

. T

F 4.15.

F 4.15 . H,

. T

42.

-40 -30 -20 -10 0 10

0,6

0,8

1,0

1,2

1,4

1,6

1,8

2,0

Vd=30 mV

DrainCurrent(A

)

Back Gate Voltage (V)

With back contact

Without back contact

Vd=60 mV

4.15: B (=30 =60 ).

T,

.


40/48


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35

I F. 4.16,

1.5 . Y,

2 D . T .

F 4.17

, 10 V 30 V. I

.

4.17: , = 10 30 . .

T D 13 V, A2O3 .


42/48

36

.

I , KTH () GFET

, , . E

. W GFET

20 (A2O3)

(ALD). W ALD

. W

ALD.

B , A2O3,

,

. A

, A2O3 . T

/A2O3 . F,

.

T GFET . I

. I

, ,

.

A

GFET,

. O


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37

, , 42. A

MOSFET.


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38

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Fabrication and Characterization of GFET

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