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EUV and electron-beam lithography performance comparison
Luisa D. Bozano, Phillip Brock, Hoa Truong, Gregory M. Wallraff, Elizabeth Lofano,Martha Sanchez, Robert Allen, IBM Almaden Research Ctr. (United States)Karen Petrillo Albany Sematech
R.D. Allen et al J. of Photopolymer Science and Tech, 22(1), (2009), 25-29G. Wallraff et al. SPIE presentation 2010
§ Similarities and differences in acid generation between e-beam (EB) and EUV by Prof Kozawa and Prof Tagawa (Jpn J. Appl. Phys. 49 (2010)):
– Both radiation based phenomena– Photoacids interact with low energy electrons deposited in resist materials via
ionization– EUV has a larger efficiency in acid yield
Material EUV E-beam 193nm correlation
Commercial 193 resist (IBM/LBNL)
terrible good good bad
Commercial EUV Resist (Albany)
good good good good
Wallraff EIPBN 2009
Seiya Masuda Proc. of SPIE Vol. 6153 615342-2 2006 Takeo Watanabe Proc. of SPIE Vol. 6153 615343-5 2006Toshikage Asakura J. of Photopolymer Science and Technology Vol 22, 89 (2009)Takeyoshi Mimura, EUVL Symposium Oct29 (2007)Daisuke Shimizu, Proc. Of SPIE Vol. 6153 615344-1 (2006)
Chemically amplified bound PAG resists (EUV resists):binding the photoacid generator (PAG) anion to the polymer backbone
• Higher resolution demonstrated by a variety of sources• Acid diffusion is extremely low (relative to unbound version) -Wallraff, SPIE 2010
limited access More accessible
E-beam quick turn around analysis for EUV resist performanceBoth high energy radiation- induced sources Both high resolution toolsOutgassing less of a concern
Typical resists outgas 1-2 x 10-8 Torr, but these were ~50x higher – can’t use normal calibration - use the total pressure in the chamber during exposure
§ Low Ea protecting groups – AAl1 type hydrolysis –no water required
§ High Base/High PAG formulations – maximise photoproducts at moderate to high dose
§ E-beam not a substitute for EUV prediction – As demonstrated some resist well behaved in E-beam didn’t perform as well in EUV– The opposite is also true, some good performance EUV resist didn’t perform as well in e-
beam
§ E-beam value– general PAB/PEB relations– Contrast behavior– Film loss/resist shrinkage