Speckle Metrology for EUV Lithography Aamod Shanker ([email protected]) Antoine Wojdyla, Markus Benk, Dmitriy Voronov, Patrick Naulleau Lawrence Berkeley National Lab This work was partly by supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. C-DEN consortium: Applied Materials, ARM, ASML, Global Foundries, IBM, Intel, KLA-Tencor, Marvell Technology, Mentor Graphics, Panoramic Tech, Photronics, Qualcomm, SanDisk and Tokyo Electron. EUV Microscope (SHARP) Aerial image Weak (EUV) vs Strong (Optical) Speckle Through – angle spectra Through – FOV spectra (spiral pupil) Pupil Latent Resist Imaging of EUV Speckle Aerial Imaging of EUV Microscope Aberrations Computing the Aberrated Pupil function Exposed but not developed resist is probed with AFM
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Speckle Metrology for EUV LithographyAamod Shanker ([email protected])
Antoine Wojdyla, Markus Benk, Dmitriy Voronov, Patrick NaulleauLawrence Berkeley National Lab
This work was partly by supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.C-DEN consortium: Applied Materials, ARM, ASML, Global Foundries, IBM, Intel, KLA-Tencor, Marvell Technology, Mentor Graphics, Panoramic Tech, Photronics, Qualcomm, SanDisk and TokyoElectron.
EUV Microscope
(SHARP)
Ae
ria
l
ima
ge
Weak (EUV) vs Strong (Optical) Speckle
Through – angle spectraThrough – FOV spectra
(spiral pupil)
Pupil
Latent Resist Imaging of EUV Speckle
Aerial Imaging of EUV Microscope Aberrations
Computing the Aberrated Pupil function
Exposed but not developed resist is probed with AFM
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