Effect of Band Structure on Quantum Interference in Multiwall Carbon Nanotubes Reference Bernhard Stojetz et al. Phys.Rev.Lett. 94, 186802 (2005) Suzuki-Kusakabe lab Yoshihisa MINAMIGAWA
Mar 31, 2015
Effect of Band Structure on Quantum Interference in
Multiwall Carbon Nanotubes
Reference
Bernhard Stojetz et al. Phys.Rev.Lett. 94, 186802 (2005)
Suzuki-Kusakabe lab
Yoshihisa MINAMIGAWA
Various applications of CNT-FET
• The nanotube FET is hopeful to be used as– Logic circuit,– Single electron transistor (SET),– Spin FET.
CNT-FET is Field Effect Transistor using Carbon Nanotube.
Carbon Nanotubes
Armchair tube
Zigzag tube
Single wall carbon nanotube (SWNT)
Multi wall carbon nanotube
(MWNT)
Density of states
Structure of CNT-FET
Gate
A single nanotube transistor.
A semiconducting nanotube is used.
A single electron transistor built from a single nanotube.
Electric field effect to CNT
CNT
Gate
Insulator
+ + +
eeee
When the gate voltage is positive…
Au Au
- - -
hhhh
When the gate voltage is negative…
1D Density of States for free electron systems
numberWaveEnergy ::2
22
km
k
dkL
d 22 21
k
d
mL
2
1
dk
mkdk
md
22
1
21
mLD d
statesofNumber:1d dD dd 11
01 dD
dD1 : States ofDensity -1D
DOS of SWNT
Zigzag tube Armchair tube
DO
S (
stat
es/u
nit
cell)
(14,0) (14,14)
The purpose of the paper
• This paper reports…
Measurement of conductance of a carbon nanotube under Gate voltage and Magnetic field.
⇒Determination of the Chirality of carbon nanotube by conductance measurement is expected to be possible.
Reference
Bernhard Stojetz et al. Phys.Rev.Lett. 94, 186802 (2005)
Gate voltage U dependence of conductance G
The bottom of the curve at 300K is nearly = -0.2V.300K
10K
1K
30mK
gateU
The fine fluctuation at 30mK is due to the Coulomb Blockade.
CNP: Charge neutrality point
The fluctuation at 10K and 1K is due to the Universal Conductance Fluctuation (UCF) and the band structure.
Conductance G(U) in Magnetic fields perpendicular to the tube axis
-2 20B ( T)
gateU =const.
B=0T
T=10K
The deviation from the zero-field conductance
G(U,B)-G(U,B=0)
U*
U*
U*
U*
U*
U*
-0.2V
U* U* U* U* U* U*
The Magnetoconductance disappears at certain gate voltages U*.
The Magnetic fields independence of conductance G under the gate voltage U*.
These gate voltages U* are grouped symmetrically around U -0.2V.≒
Density of states of SWNT (140,140)
Black line : DOS of SWNT
Gray line : The number of excess electrons on the tube ( N)⊿
When fermi level overlaps van Hove singularity, We expect big change in magnetoconductance when the Fermi level of the nanotube come across the singularity.
Relation of U* and N*⊿ ⊿
** NeUC
To confirm next assumptions
1. The current mainly flows in the outermost tube,
2. The chirality of the tube is given by (140,140),
3. Charge is induced by the gate voltage,
the next relations U* and*was checked.
U*=U*+0.2 (V)
U*: Singular points in Fig.b
N*: The number of excess electrons on the tube.
Circles : Present experiment Triangles : Reference data
Theoretical calculation of the conductance G
①
2
1
2
2
2
2
3
1),(
WeB
LL
eBUGWL
),()0,(),( BUGBUGBUG WL
L : Phase coherent length of the electrons
W : Diameter of nanotube
L : Length of nanotube
LWeB
LL
e
BUGBUG
BUGBUGBUGBUGBUGBUG
WLWL
WLWL
2
1
2
2
2
2
3
1
)0,(),(
)0,()0,(),()0,()0,(),(
Theoretical calculation of the conductance G)0,(),( BUGBUG WLWL G(U,B)-G(U,B=0)
Calculation data Experimental data
data. econductanc
alexperiment the
fittingby obtained
are)0,(, BUGL U*
U*
U*
U*
U*
U*
Conclusion
• Phase coherent length is very short at the onset of a subband. Theoretical explanation is unknown.
• It is expected that deviation from zero-field conductance G(U,B)-G(U,B=0) determines van Hove singularities and structure of the tube.
L