화합물반도체 ( I ) Introduction & Material Propertiesocw.snu.ac.kr/sites/default/files/NOTE/1573.pdf · 77 GHz Radar. 24 GHz Radar. Antenna. RF MEMS Switch. MMIC. Baseband CMOS.

화합물반도체 1

화합물 반도체 ( I )Introduction & Material Properties

2007 / 가을 학기

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(주목할 분야 I) 자동차용 반도체

2015년디지털자동차 ▪ 32/64-bit MPUs: 35 ~ 40개▪ 8/16-bit MCUs: 140-160개

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(주목할 분야 II) Solid-State Lighting

Samsung’s 46” LED-based LCD TV

Hyndai’s LED Front-Light

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77 GHz Radar 24 GHz Radar

Antenna RF MEMS Switch Baseband CMOSMMIC

Collision Avoidance system

(주목할 분야 III) Automobile Radar – System on Chip/Package

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차세대복합 반도체시스템

미래의반도체 chip – 복합기술들의집적화

[source - ENIAC]

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다양한새로운 반도체재료

격자상수

청색/백색 광원

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초고주파응용을위한 반도체종류

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Compound Semiconductors

Various Semiconductors

- Elementary : Si, Ge, C

(compound)

- III-V : GaAs, InP, InAs,InSb, GaP, ••••

- III-Nitride : GaN, AlN, InN- II-VI : ZnO, ZnSe, HgTe,

ZnS, CdS, ••••- IV-VI : PdSe, PdTe- Oxide (Semiconductor) : ZnO

InZnO, GaZnO. ZnSnO, ••••

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Wide Bandgap Materials

* Oxide Semiconductors – ZnO (Eg=3.35eV)

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ZnO : Wide-bandgap Oxide Semiconductor

Why ZnO ?- Wide and direct band gap (Eg = 3.4 eV at R.T.)- Large exciton binding energy : 59 meV- Band gap control by addition of Mg/Cd- Quantum structure (ZnO/ZnMgO) fabrications- Easy growth of high quality heterostructures- Low temperature growth- Challenges: accurate control of n- & p-doping- Fabrications of high performance devices (LEDs & FETs)

ZnO device applications- Light emitting devices- Transparent electronic devices- Chemical and biological sensors

(Ref.) Appl. Phys. Lett. 89, 053502 2006

(Ref.) J. Electroceramics 17, 267–275, 2006

TransparentBlue LED

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High-k Oxides ( I )

0 10 20 30 40 50 602

3

4

5

6

7

8

9

10

K

Ban

d G

ap (e

V) MgO

BaOSrO

CaO

SiO 2Al O2 3

ZrO2HfO2

TiO2

ZrSiO4HfSiO4

Si N3 4Ta O2 5

La O2 3

Y O2 3

Choice of High K Oxide for Si MOS• High enough dielectric constant K• Stable - no reaction with Si

• Oxides with high heat of formation• Preferred – HfO2, Zr, Y, La, Al

• Stable up to 1050°C• Low diffusion, amorphous HfSiOx:N

• Band Offsets• Wide band gap

• Good interface • Few defects

High K Oxide for MIM Capacitor- SrTiO2, BST for higher K

35nm MOSFET

(Intel)SiO2

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High-k Oxides ( II )

-6

-4

-2

0

2

4

6

Ene

rgy

(eV

)

SiO2

4.4

3.5

1.1

2.4

1.8

0.3

3.0

-0.1

2.3

Si3N4Ta2O5

SrTiO3

BaZrO3

ZrO2

Al2O3

Y2O3La2O3

ZrSiO4HfSiO4

4.9

2.82.3

2.6 3.4

1.51.5

3.43.3

1.4

3.4

0.8

Si HfO2

1.9

2.1

LaAlO3

* Band offsets should be > 1 Vfor small gate leakage current.

(Ref.) J. Robertson, 2006

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World-Wide Compound Semiconductor Market

- Total Market for Compound Semiconductor Components :

18B $ at 2001 (78% - Optoelectronics)

* Most Popular CS Materials GaAs – most commonInP – high performance RF & 1.3/1.55μm optoelectronicsGaN – new materials; blue/white LED & high power

- Total LED Chip Market : 3.4B $ at 2003

5B $ at 2007

Taiwan : more than 60% market

Highly Bright LED will dominate.

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Worldwide GaAs Device & MMIC Merchant Market

2006

Digital 79.8

MMIC 3532.1

FET 405.4

TOTAL 4017.3

2006

Military 172.4

Wireless comms. 2168.9

F-O Communication 133.8

Consumer 119.1

Automotive & Misc. 937.9

TOTAL 3532.1

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New Markets for III-V Electronic Devices

1. PA and Switch for Wireless LAN (5 GHz)

- 67% of the 177 million PAs in 2008 will be manufactured using GaAs- All WLAN switch ICs will use GaAs technology.

2. Automotive Radar (24 GHz and 77GHz)

- 5 million radar units in 2006(Strategy Analytics)

- 100 million units in 2010 (?)

3. Satellite Communication Terminal- release of 71-76, 81-86 and 92-95 GHz (70/80/90 GHz) bands

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Global Wafer Demand – Si & GaAs

Si Demand- mainly 12 & 8 inch

GaAs Demand- mainly 6 & 4 inch

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The Lowest Cost Technology ?

“not always the smallest dimension”

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Compound Semiconductors Materials for LEDs

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Applications of III-V Nitride Optical Devices

Major applications(cellular phone, traffic light)

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GaN LED Structures/Material Challenges

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Various GaN Devices

White LED (Sold-State Lighting) High Power (RF) Devices (Military)

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Nichia’s Blue LED with GaN & Shuji Nakamura

* Big Five in Blue & White LED- Nichia, Toyoda Gosei (Japan)- Cree, Lumiled (USA)- Osram (Germany)

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USA’s GaN Electronic Device Program ( I )

- launched from 2005- supported by DARPA(from Compound Semiconductor(CS) magazine, May 2005)

http://compoundsemiconductor.net/articles/magazine

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USA’s GaN Electronic Device Program ( II )

(from Compound Semiconductor(CS) magazine, May 2005)http://compoundsemiconductor.net/articles/magazine