EE141 1 EE141 1 EE141-S04 EE141 EE141- Spring 2004 Spring 2004 Digital Integrated Digital Integrated Circuits Circuits Lecture 18 Lecture 18 Adders Adders Guest Lecturer: Guest Lecturer: Prof. Prof. Vladimirescu Vladimirescu EE141 2 EE141-S04 Administrative Stuff Administrative Stuff Project due tomorrow by 5:30pm E-mail report to [email protected]SPICE file must be included Enjoy spring break
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EE141- Spring 2004 Digital Integrated Circuitsbwrcs.eecs.berkeley.edu/Classes/icdesign/ee141_s04/...EE141-S04 Mirror Adder Stick Diagram ABC i V DD GND B C o AC i C o C i AB S EE141
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EE141
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EE141EE141-- Spring 2004Spring 2004Digital Integrated Digital Integrated CircuitsCircuits
Lecture 18Lecture 18AddersAdders
Guest Lecturer: Guest Lecturer: Prof. Prof. VladimirescuVladimirescu
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Administrative StuffAdministrative StuffProject due tomorrow by 5:30pm
Last lectureDynamic logic (will be wrapped up after spring break)
Today’s lectureAdders
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AddersAdders
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FullFull--AdderAdderA B
Cout
Sum
Cin Fulladder
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The Binary AdderThe Binary Adder
S A B Ci⊕ ⊕=
A= BCi ABCi ABCi ABCi+ + +
Co AB BCi ACi+ +=
A B
Cout
Sum
Cin Fulladder
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Express Sum and Carry as a function of P, G, DExpress Sum and Carry as a function of P, G, D
Define 3 new variable which ONLY depend on A, B
Generate (G) = AB
Propagate (P) = A ⊕ B
Delete = A B
Can also derive expressions for S and Co based on D and P
Propagate (P) = A + BNote that we will be sometimes using an alternate definition for
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The RippleThe Ripple--Carry AdderCarry Adder
Worst case delay linear with the number of bits
Goal: Make the fastest possible carry path circuit
FA FA FA FA
A0 B0
S0
A1 B1
S1
A2 B2
S2
A3 B3
S3
Ci,0 Co,0
(= Ci,1)
Co,1 Co,2 Co,3
td = O(N)
tadder = (N-1)tcarry + tsum
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Complimentary Static CMOS Full AdderComplimentary Static CMOS Full Adder
28 Transistors
A B
B
A
Ci
Ci A
X
VDD
VDD
A B
Ci BA
B VDD
A
B
Ci
Ci
A
B
A CiB
Co
VDD
S
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Inversion PropertyInversion Property
A B
S
CoCi FA
A B
S
CoCi FA
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Minimize Critical Path by Reducing Inverting StagesMinimize Critical Path by Reducing Inverting Stages
Exploit Inversion Property
A3
FA FA FA
Even cell Odd cell
FA
A0 B0
S0
A1 B1
S1
A2 B2
S2
B3
S3
Ci,0 Co,0 Co,1 Co,3Co,2
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A Better Structure: The Mirror AdderA Better Structure: The Mirror Adder
VDD
Ci
A
BBA
B
A
A BKill
Generate"1"-Propagate
"0"-Propagate
VDD
Ci
A B Ci
Ci
B
A
Ci
A
BBA
VDD
SCo
24 transistors
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Mirror AdderMirror AdderStick Diagram
CiA B
VDD
GND
B
Co
A Ci Co Ci A B
S
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The Mirror AdderThe Mirror Adder•The NMOS and PMOS chains are completely symmetrical. A maximum of two series transistors can be observed in the carry-generation circuitry.
•When laying out the cell, the most critical issue is the minimization of the capacitance at node Co. The reduction of the diffusion capacitances is particularly important.
•The capacitance at node Co is composed of four diffusion capacitances, two internal gate capacitances, and six gate capacitances in the connecting adder cell .
•The transistors connected to Ci are placed closest to the output.
•Only the transistors in the carry stage have to be optimized foroptimal speed. All transistors in the sum stage can be minimal size.
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Transmission Gate Full AdderTransmission Gate Full Adder
A
B
P
Ci
VDDA
A A
VDD
Ci
A
P
AB
VDD
VDD
Ci
Ci
Co
S
Ci
P
P
P
P
P
Sum Generation
Carry Generation
Setup
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Manchester Carry ChainManchester Carry Chain
CoCi
Gi
Di
Pi
Pi
VDD
CoCi
Gi
Pi
VDD
φ
φ
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Manchester Carry ChainManchester Carry Chain
G2
φ
C3
G3
Ci,0
P0
G1
VDD
φ
G0
P1 P2 P3
C3C2C1C0
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Manchester Carry ChainManchester Carry Chain
Pi + 1 Gi + 1 φ
Ci
Inverter/Sum Row
Propagate/Generate Row
Pi Gi φ
Ci - 1Ci + 1
VDD
GND
Stick Diagram
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CarryCarry--Bypass AdderBypass Adder
FA FA FA FA
P0 G1 P0 G1 P2 G2 P3 G3
Co,3Co,2Co,1Co,0Ci,0
FA FA FA FA
P0 G1 P0 G1 P2 G2 P3 G3
Co,2Co,1Co,0Ci,0
Co,3
Mul
tipl
exer
BP=PoP1P2P3
Idea: If (P0 and P1 and P2 and P3 = 1)then Co3 = C0, else “kill” or “generate”.