Edc Lab Observation Gpcet (2016-17)

7/25/2019 Edc Lab Observation Gpcet (2016-17)

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Dept., of ECE, GPCET, Kurnool 1

GG..PPUULLLLAAIIAAHHCCOOLLLLEEGGEEOOFFEENNGGIINNEEEERRIINNGG&&TTEECCHHNNOOLLOOGGYYDEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

LAB OBSERVATION

ELECTRONIC DEVICES AND CIRCUITS LABORATORY

R15 REGULATION

Prepared by

Mr.T.TIRUPAL,M.Tech., (Ph.D)Associate Professor, ECE Dept., GPCET, Kurnool

Ms.M.JAYALAKSHMI,M.TechAssociate Professor, ECE Dept., RCEW, Kurnool

DEPARTMENT OFELECTRONICS AND COMMUNICATION ENGINEERING

G. Pullaiah College of Engineering & Technology::Kurnool(Approved by AICTE, New Delhi, Recognized by UGC under 2 (f) & 12 (B),

Permanently Affiliated to JNTUA, Ananthapuramu)

An ISO 9001:2008 Certified Institution

Nandikotkur Road, Kurnool518002

Andhra Pradesh, India.

www.gpcet.ac.in


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Institute

Vision

To prepare professionally superior and ethically strong

global manpower in technology and management to serve

the nation and the world in the 21stcentury

Mission

To strive hard in training the students with the current

technology and motivate them to take up research problems

and innovations associated with personality development

programs to meet the challenges in this competitive world in

an efficient manner

Department

Vision

To impart quality technical education and molding

electronics and communication engineers with professional

competence, ethics and global outlook by building strong

teaching and research environment

Mission

To train Electronics & Communication Engineering

graduates to meet future global challenges.

To motivate the students to take up research leading to

multidisciplinary innovative projects.

To produce future leaders with cohesive teamwork in

electronics engineering applications.

To flair entrepreneurial skill amongst students for overall

societal upliftment.

PROGRAMME EDUCATIONAL OBJECTIVES (PEOs):

PEO-1 Apply the principles of basic engineering sciences in performing professional tasks in

Electronics and Communication Engineering and to develop awareness on societal concerns.

PEO-2Demonstrate problem-solving abilities that permit to contribute in a variety of signal

processing, design of circuitry and academic careers.

PEO-3 Thrive in diverse, global, and multidisciplinary environments with team spirit for

successful completion and management of electronic projects.

PEO-4 Participate in lifelong-learning activities to enhance professional and ethical

development.

PROGRAMME OUTCOMES (POs):

Engineering Graduates will be able to:

PO1 Engineering knowledge: Apply the knowledge of mathematics, science, engineering

fundamentals and an engineering specialization to the solution of complex engineering

problems.

PO2 Problem Analysis: Identify, formulate, review research literature and analyze complex

engineering problems reaching substantiated conclusions using first principles of

mathematics, natural sciences and engineering sciences.

PO3 Design/ Development of solutions: Design solutions for complex engineering problems

and design system components or processes that meet the specified needs with appropriate

consideration for the public health and safety, the cultural, society and environmental

considerations.

PO4 Conduct investigations of complex problems: Use research-based knowledge and

research methods including design of experiments, analysis and interpretation of data and

synthesis of the information to provide valid conclusions.


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PO5 Modern tool usage: Create, select and apply appropriate techniques, resources, modern

engineering and IT tools including prediction and modelling to complex engineering activities

with an understanding of the limitations.

PO6 The engineer and society: Apply reasoning informed by the contextual knowledge to

assess societal, health, safety, legal and cultural issues and the consequent responsibilities

relevant to the professional engineering practice.

PO7 Environment and Sustainability: Understand the impact of the professional engineering

solutions in societal and environmental contexts, and demonstrate the knowledge of, andneed for sustainable development.

PO8 Ethics: Apply ethical principles and commit to professional ethics and responsibilities and

norms of the engineering practice.

PO9 Individual and team work: Function effectively as an individual, and as a member or

leader in diverse teams and in multidisciplinary settings.

PO10 Communication: Communicate effectively on complex engineering activities with the

engineering community and with society at large, such as, being able to comprehend and

write effective reports and design documentation, make effective presentations, and give and

receive clear instructions.

PO11 Project management and finance: Demonstrate knowledge and understanding of theengineering and management principles and apply these to ones own work, as a member and

leader in a team, to manage projects and in multidisciplinary environments.

PO12 Life-long learning: Recognize the need for, and have the preparation and ability to

engage in independent and life-long learning in the broadest context of technological change.

PROGAMME SPECIFIC OUTCOMES (PSOs):

Engineering Graduates will be able to:

PSO-1: Apply the principles of Electronics, Analog and Digital Systems in the potential fields of

Consumer Electronics, Medical and Defence.

PSO-2: Get profound knowledge in Communications, Signal and Image Processing along withprogramming & simulation tools for research advancement.

PSO-3: Apply the programming concepts of VLSI, Microprocessors, Microcontrollers, and

Embedded Systems in Real Time applications.

PSO-4: Communicate effectively in verbal, written form and group related activities with

ethical and social responsibility.

COURSE OUTCOMES (COs):

At the end of the course, the student will be able to


C207.1 Find the cut-in voltage, static and dynamic resistances from V-I characteristicsof PN junction diode and Zener diode.

C207.2Compute the ripple content present in half wave and full wave rectifiers with

and without filters.

C207.3 Compare and contrast the volt-ampere characteristics of BJT, UJT & SCR.

C207.4 Describe the current flow in Field Effect Transistor.

C207.5 Analyze the description of CRO and Function generator panels.

C207.6 Evaluate the Input, output resistance and bandwidth of BJT & FET Amplifiers.


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JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY ANANTAPUR

II B.Tech. I-Sem (ECE) L C

4 2

(15A04305) ELECTRONIC DEVICES AND CIRCUITS LABORATORY

Objectives:

This Lab provides the students to get an electrical model for various semiconductor

devices. Students can find and plot V_I characteristics of all semiconductor devices.Student learns the practical applications of the devices. They can learn and implement

the concept of the feedback and frequency response of the small signal amplifier

Outcomes:

Students able to learn electrical model for various semiconductor devices and learns thepractical applications of the semiconductor devices

PART A: Electronic Workshop Practice

1. Identification, Specifications, Testing of R, L, C Components (Colour Codes),

Potentiometers, Coils, Gang Condensers, Relays, Bread Boards.

2. Identification, Specifications and Testing of active devices, Diodes, BJTs,

JFETs, LEDs, LCDs, SCR, UJT.

3. Soldering Practice- Simple circuits using active and passive components.

4. Study and operation of Ammeters, Voltmeters, Transformers, Analog and

Digital Multimeter, Function Generator, Regulated Power Supply and CRO.

PART B: List of Experiments

(For Laboratory Examination-Minimum of Ten Experiments)

1. P-N Junction Diode Characteristics

Part A: Germanium Diode (Forward bias & Reverse bias)

Part B: Silicon Diode (Forward bias only)

2. Zener Diode Characteristics

Part A: V-I Characteristics

Part B: Zener Diode act as a Voltage Regulator

3. Rectifiers (without and with c-filter)

Part A: Half-wave Rectifier

Part B: Full-wave Rectifier

4. BJT Characteristics(CE Configuration)

Part A: Input Characteristics

Part B: Output Characteristics

5. FET Characteristics(CS Configuration)

Part A: Drain (Output) Characteristics

Part B: Transfer Characteristics


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6. SCR Characteristics

7. UJT Characteristics

8. Transistor Biasing

9. CRO Operation and its Measurements

10.BJT-CE Amplifier

11.Emitter Follower-CC Amplifier

12.FET-CS Amplifier

PART C: Equipment required for Laboratory

1. Regulated Power supplies

2. Analog/Digital Storage Oscilloscopes

3. Analog/Digital Function Generators

4. Digital Multimeters

5. Decade Rsistance Boxes/Rheostats6. Decade Capacitance Boxes

7. Ammeters (Analog or Digital)

8. Voltmeters (Analog or Digital)

9. Active & Passive Electronic Components

10. Bread Boards

11. Connecting Wires

12. CRO Probes etc.


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G.PULLAIAH COLLEGE OF ENGINEERING & TECHNOLOGY::KURNOOL

LIST OF EXPERIMENTS


PART A: Electronic Workshop Practice

PART B:

1. P-N Junction Diode Characteristics

Part A: Germanium Diode (Forward bias & Reverse bias)

Part B: Silicon Diode (Forward bias only)

2. Zener diode characteristics

Part A: V-I Characteristics

Part B: Zener Diode act as a Voltage Regulator

3. Rectifiers (without and with C-filter)

Part A: Half-wave Rectifier

Part B: Full-wave Rectifier

4. BJT characteristics (CE Configuration)

Part A: Input characteristics

Part B: Output characteristics

5. FET characteristics (CS Configuration)

Part A: Drain (output) characteristics

Part B: Transfer characteristics

6. SCR Characteristics

7. UJT characteristics

8. Transistor Biasing

9. CRO Operation and its Measurements

10.BJT-CE Amplifier

11.Emitter Follower-CC Amplifier

12.FET-CS Amplifier


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CIRCUIT DIAGRAM:

FORWARD BIAS CIRCUIT:

Fig (1)Tabular Column:

Forward bias:

S.No.GERMANIUM SILICON

VF (V) IF (mA) VF (V) IF (mA)

1.

2.

3.

4.4.

5.

6.

7.

8.

9.

10.

11.

12.13.

14.

15.


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Exp no: Date:

P-N JUNCTION DIODE CHARACTERISTICS

Aim:

A. To plot the VoltAmpere characterist ics of Germanium Diode in

Forward & Reverse bias condit ion. Also f ind the cut- in voltage,

stat ic and dynamic resistances from the graph.

B. To plot the VoltAmpere characterist ics of Si l icon Diode in

Forward bias condit ion. Also f ind the cut- in voltage, stat ic and

dynamic resistances from the graph.

Apparatus:

1. Regulated Power supply 030V, 1A

2. Diodes 1N4007 1 No0A79 _ 1 No

3. Resistance 1 K _ 1 No

4. Ammeters (0 20 mA) _ 1 No

(0 200 A) 1 No

5. Voltmeter (0 1 V) 1 No

(0 20 V) 1 No

6. Bread board 1 No

7. Connect ing wires

Procedure:

Forward Bias:

1. Connect the c ircui t as per the c ircui t d iagram shown in Fig (1) for

both Germanium and Si l icon.

2. Vary the regulated power supply (RPS) in such a way that the

readings in voltmeter (V f) varies insteps of 0.1V, up to 0.4V forGermanium and up to 0.7V for Si l icon for each voltmeter reading,

note down the ammeter reading (I f) .

3. Tabulate the values of forward voltage (V f) and forward current ( I f) .

4. Plot the graph between VF and IF .

5. From the graph f ind the cut - in voltage, stat ic f orward resistance

I

VRF

and dynamic forward resistance

12

12

II

VV

I

VrF

.


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CIRCUIT DIAGRAM:REVERSE BIAS:

Fig (2)

Tabular Column:

S.No.GERMANIUM

VR (V) IR (A)

1.

2.

3.

4.

5.

6.7.

8.

9.

10.

11.

12.

13.

14.

15.16.

17.

18.

19.

20.

21.


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Reverse Bias:

1. Connect the c ircui t as per the c ircui t d iagram shown in Fig (2) for

Germanium.

2. Vary the regulated power supply in such a way that the readings in

voltmeter (V r) varies in steps of 1V, up to 20V for Germanium and

for each voltmeter reading, note down the ammeter readings (I r) .

3. Tabulate the values of reverse voltage (V r) and reverse current ( I r) .

4. Plot the graph between V rand I r.

5. From t he graph f ind the stat ic reverse resistance I

VR

r and

dynamic reverse resistance,

12

12

II

VV

I

VrR .

Precautions:

1. Dont g ive vol tage to the c ircui t beyond prescribed range.

2. Dont short c i rcui t the output terminal of power supply.

3. Careful ly connect meter terminals (+ and ) .

4. Careful ly connect PN diode terminals (anode and cathode).

Model Graph:


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CALCULATIONS:

GERMANIUM SILICON

Forward Bias Forward Bias

IVRF =

IVRF =

12

12

II

VV

I

VrF =

12

12

II

VV

I

VrF

=

REVERSE BIAS

I

V

Rr =

12

12

II

VV

I

VrR =


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Result:

Volt Ampere characterist ics of Germanium and Si l icon semiconductor

diodes in forward and reverse bias condit ions are plotted and found

Cut- in voltage for Germanium, V =

Cut- in voltage for Si l icon, V =

Stat ic Forward Resistance of Germanium, RF =

Dynamic Forward Resistance of Germanium, rF =

Stat ic Reverse Resistance of Germanium, R r =

Dynamic Reverse Resistance of Germanium, rR =

Stat ic Forward Resistance of Si l icon, RF =

Dynamic Forward Resistance of Si l icon, r F =

PRECAUTIONS:

1. Check the wires for continuity before use.2. Keep the power supply at Zero volts before Start.3. All the contacts must be intact.

VIVA QUESTIONS:

1. Draw the circuit symbol of the Diode?

2. Draw ideal Diode Volt Ampere Characteristics?3. What is Cut-in Voltage?

4. What are Static and Dynamic Resistances?5. Explain the working of a Diode as a switch6. What is space charge region?7. What is Diffusion Capacitance?8. What are Minority and Majority carriers in P type and in N type materials?9. What is the current equation of the Diode?


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CIRCUIT DIAGRAM:

FORWARD BIAS

Tabular Column:

S.NO VF(V) IF(mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.

12.

13.


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Exp no: Date:

ZENER DIODE CHARACTERISTICS

Aim:

A. To Plot the Volt Ampere characterist ics of a Zener diode and

find the Break down Voltage of Zener Diode.

B. To plot the Load characterist ics of a Zener diode (Zener diode

as a Voltage Regulator).

Apparatus:

1. Regulated Power supply 030V, 1A

2. Zener Diode BZX6.2V (or) BZX8.2V 1No

3. Ammeter 0 20 mA 1No

4. Voltmeter 0 1 V 1No

0 10 V 1No

5. Resistor 1K 1No

6. Decade Resistance Box (DRB) 1No

7. Bread Board 1No


Procedure:

Forward Bias:

1. Connect the c ircui t as per the c ircui t d iagram shown in Fig (1).

2. Vary the regulated power supply ( RPS) in such a way that the

readings in voltmeter (V f) varies insteps of 0.1V up to 0.8V and for

each voltmeter reading, note down the ammeter reading (I f) .

3. Tabulate the values of forward voltage (V f) and forward current ( I f) .

4. Plot the graph between VF and IF .


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REVERSE BIAS

Fig (2)

Tabular Column:

S.No. VR(Volts) IR(mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.

12.

13.

14.

15.

16.

17.

18.


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Reverse Bias:

1. Connect the c ircui t as per the c ircui t d iagram shown in Fig (2)

2. Vary the power supply voltage in such a way that the readings of

voltmeter (Vz) are taken in steps of 0.5V up to Breakdown

voltage and note down the corresponding Ammeter ( I z) and

Voltmeter (Vz) Readings.

3. Once break down occurs V Z remains fair ly constant even though

IZ increases.

4. Plot the graph between Vz and I z .

5. Find the Zener Breakdown voltage f rom the graph by drawing a

tangent on the reverse Bias Characteristics of the Zener Diode starting from the

Knee and touching most of the points of the curve. The point where the tangent

intersects the X-axis is the Zener Breakdown Voltage.

Load Characteristics (Zener diode as a Voltage Regulator):


2. Keep the resistance in DRB at such a maximum value that the

Zener diode breaks down and current becomes zero.

3. Decrease the load resistance and note down the corresponding

load voltage (V L or Vz) and load current ( I L or I z) and tabulate the

readings.

PRECAUTIONS:

1. Check the wires for continuity before use.2. Keep the power supply at Zero volts before Start3. All the contacts must be intact

VIVA QUESTIONS:

1. Draw the circuit symbol of the Zener Diode2. What is meant by Zener break down?3. What are the different types of break downs?4. What is the difference between Avalanche and Zener break down?5. In a lightly doped and heavily doped diode which type of break down occurs?6. What are the applications of Zener diode?7. Explain operation of Zener diode as Voltage Regulator?8. What is the difference between normal PN diode and Zener diode?

9. What is a Regulation?


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Load characteristics (Zener diode as a Voltage Regulator)

Circuit diagram:

Fig (3)

Tabular Column:

S.No. RL (K) VL (Volts) IL (mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.


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MODEL GRAPH:

V-I Characteristics

Load Characteristics

Result:

Volt Ampere and Load Regulat ion Characterist ics of Zener Diode are

plotted and Zener Break Down Voltage is found from the graph which

is VZ =


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PART-A: CIRCUIT DIAGRAM for Half-Wave Rectifier without filter:

Fig (1)

Tabular Column:No Load DC Voltage, VNL=

S.No.

Load

Resistance

RL ( )

Output DC

Current

Idc(mA)

Output DC

Voltage

Vdc(V)

Ripple

Voltage

Vac(V)

Ripple

Factor

r = Vac/Vdc

% of regulation =

[(vNL VFL)/VFL] x 100

1. 100

2. 200

3. 300

4. 400

5. 500

6. 600

7. 700

8. 800

9. 900

10. 1000


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Exp no: Date:

RECTIFIERS (without and with C-filter)Aim:

A. To Find the Ripple factor and Percentage of Regulation of a Half Wave Rectifier

without and with Filter.

B. To Find the Ripple factor and Percentage of Regulation of a Full Wave Rectifier

without and with Filter.

Apparatus:

1. Step down transformer 230V/50 Hz: (9-0-9) V 1 No

2. Diodes 1N4007 2 No

3. DRB (Decade Resistance Box) 1 No

4. Ammeter (0200 mA) 1 No

5. Digital Multimeter (DMM) 1 No

6. Capacitors for (Half Wave Rectifier) 47 F 1 No

for (Full Wave Rectifier) 100 F 1 No

7. Bread Board 1No

8. Connecting wires

Procedure:

1. Connect the circuit as per the circuit diagram shown in Figs (1).

2. Note down the No Load DC Voltage VNL from multimeter when Idc = 0 i.e.,

excluding load resistance RL (DRB) from circuit.

3. Keep the load resistance RL (DRB) at a maximum value.

4. Decrease the load resistance from maximum to minimum value in steps and

note down the corresponding ammeter Idc and voltmeter Vdc, Vacreadings in

multimeter.

5. Calculate the ripple factor ( r),Vdc

Vac

valueAverage

componentACofvaluesRMSr

6. Calculate the Percentage of Regulation = (VN L VF L ) /VF L X100

7. Draw the following graphs

i. Idcvs Vdc

ii. Idcvs Ripple Factor (r)

iii. Idcvs Percentage of Regulation.

8. Repeat the above procedure for fig (2) using with filter.


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CIRCUIT DIAGRAM for half-wave rectifier with filter

Fig (2)

Tabular Column:

No Load DC Voltage, VNL=

S.No.

LoadResistance

RL ( )

OutputDC

CurrentIdc(mA)

OutputDC

VoltageVdc(V)

RippleVoltageVac(V)

RippleFactor

r = Vac/Vdc

% of Regulation =

[(VNL VFL)/VFL] X 100CRf L32

1r

1. 100

2. 200

3. 300

4. 400

5. 500

6. 600

7. 700

8. 800

9. 900

10. 1000


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MODEL WAVEFORMS OF HALF-WAVE RECTIFIER:

MODEL GRAPHS FOR HWR WITHOUT FILTER:

MODEL WAVEFORMS FOR HWR WITH FILTER:

MODEL GRAPHS FOR WITH FILTER:


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Result:

Ripple factor and Percentage of Regulation of a Half Wave Rectifier without and with

Filter are found.

Ripple Factor without filter =

Ripple Factor with filter =

Percentage of Regulation without filter =

Percentage of Regulation with filter =

PRECAUTIONS:

1. Check the wires for continuity before use.2. Keep the power supply at Zero volts before Start.3. All the contacts must be intact.

VIVA QUESTIONS:

1. What is a rectifier?

2. How Diode acts as a rectifier?3. What is the significance of PIV? What is the condition imposed on PIV?4. Draw the o/p wave form of HWR without filter?5. Draw the o/p wave form of HWR with filter?6. What is meant by ripple factor? For a good filter whether ripple factor should

be high or low?7. What happens to the o/p wave form if we increase the capacitor value?


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PART-B: CIRCUIT DIAGRAM for Full-wave Rectifier without Filter:

Fig (1)

Tabular Column:No load D.C Voltage, V N L=

S.No.

LoadResistance

RL ( )

OutputDC

CurrentIdc(mA)

OutputDC

VoltageVdc(V)

RippleVoltageVac(V)

RippleFactor

r = Vac/Vdc

% of Regulation =

[(VNL VFL)/VFL] X 100

1. 100

2. 200

3. 3004. 400

5. 500

6. 600

7. 700

8. 800

9. 900

10. 1000


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Procedure:

1. Connect the circuit as per the circuit diagram shown in Figs (1).

2. Note down the No Load DC Voltage VNL from multimeter when Idc = 0 i.e.,

excluding load resistance RL (DRB) from circuit.

3. Keep the load resistance RL (DRB) at a maximum value.

4. Decrease the load resistance from maximum to minimum value in steps and

note down the corresponding ammeter Idc and voltmeter Vdc, Vacreadings in

multimeter.

5. Calculate the ripple factor ( r),Vdc

Vac

valueAverage

componentACofvaluesRMSr

6. Calculate the Percentage of Regulation = (VN L VF L ) /VF L X100

7. Draw the following graphs

iv. Idcvs Vdc

v. Idcvs Ripple Factor (r)

vi. Idcvs Percentage of Regulation.

8. Repeat the above procedure for fig (2) using with filter.


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CIRCUIT DIAGRAM for Full Wave Rectifier With Filter:

Fig (2)

Tabular Column:No load D.C Voltage, V N L=

S.No.

LoadResistance

RL ( )

OutputDC

CurrentIdc(mA)

OutputDC

VoltageVdc(V)

RippleVoltageVac(V)

RippleFactor

r = Vac/Vdc

% of Regulation =

[(VNL VFL)/VFL] X 100 CRf L34

1r

1. 100

2. 200

3. 300

4. 400

5. 500

6. 600

7. 700

8. 800

9. 900

10. 1000


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MODEL WAVEFORMS FOR FWR WITHOUT FILTER:

MODEL GRAPH FOR FWR WITHOUT FILTER

MODEL WAVEFORMS FOR FWR:

MODEL GRAPHS FOR FWR WITH FILTER:


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Result:

Ripple factor and Percentage of Regulation of a Full Wave Rectifier without and with

Filter is found.

Ripple Factor without filter =

Ripple Factor with filter =

Percentage of Regulation without filter =

Percentage of Regulation with filter =

PRECAUTIONS:

1. Check the wires for continuity before use.

2. Keep the power supply at Zero volts before Start.3. All the contacts must be intact.

VIVA QUESTIONS:

1. What is a full wave rectifier?

2. What is the significance of PIV requirement of Diode in full-wave rectifier?3. Compare capacitor filter with an inductor filter?4. Draw the o/p wave form of FWR without filter?5. What is meant by ripple factor? What happens to the ripple factor if we

insert the filter?6. What happens to the o/p wave form if we increase the capacitor value?7. What is the theoretical maximum value of ripple factor for a full wave

rectifier?


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CIRCUIT DIAGRAM:

Input Characteristics:

Fig (1)

TABULAR COLUMN :

S.NOVCE = 0 V VCE = 2 V

VBE(V) IB (A) VB E(V) IB (A)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.


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Exp no: Date:

BJT Characteristics (CE Configuration)

Aim:

A. To plot the input characterist ics of t ransistor connected in

Common Emitter (CE) conf igurat ion.

B. To plot the output characterist ics of transistor c onnected in

Common Emitter (CE) conf igurat ion.

Apparatus:

1. Regulated Power supply 030V2. Transistor BC107 1 No3. Resistance 1K 1 No

560 1 No

4. Voltmeters 01V 1 No020V 1 No

5. Ammeters 020mA 1 No

0200 A 1 No6. Bread Board 1 No7. Connect ing wires

Procedure:

PART A: Input characteristics:


2. Set VCE= 0V by adjust ing V CC .

3. Vary the input voltage VBB and note the readings of I B and VBE .

4. Repeat the second step for VCE = 2V.

5. Plot the input characterist ics V BE vs IB for constant values of

VC E = 0V and 2V.


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Output characteristics:

Fig (2)

TABULAR COLUMN :

S.NoIB = 10 A IB = 20A

VCE(V) IC (mA) VCE(V) IC (mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.

12.

13.

14.


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PART B: Output characteristics:

1. Connect the c ircui t as per the c ircui t d iagram shown in f ig (2).

2. Set IB = 10 A by adjust ing V BB.

3. Vary the supply voltage VC C and note the readings of I Cand VC E .

4. Repeat the above procedure for I B = 20 A.

5. Plot the output characterist ics VC E vs IC for constant values of IB .


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Model graph:

Input characteristics:

Output characteristics:


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Result:

The Input and Output characterist ics of CE conf igurat ion of a given

transistor are plotted.

Precautions:

1. Dont short circuit the output terminal

2. Dont give the voltage to the circuit beyond the prescribed range

3. Carefully vary the power supply

4. Carefully connect the transistor terminals

VIVA QUESTIONS:

1. Expand Transistor?2. Draw the symbols of PNP and NPN transistors.3. What is the arrow head in the symbol of transistor represents.4. List some advantages of transistor.5. Define transistor in terms of size and doping concentration.6. What is bipolar in bipolar junction transistor (BJT).7. Name four regions where transistor is to be operated.8. How transistor acts like a switch.9. How transistor acts like an amplifier.10. Define early effect (or) Base-width modulation.11. Define Punch through (or) reach through.


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Circuit diagram :

Fig (1)Tabular column:Drain (Output) characteristics:

S.No.VG S = 0 V VGS = 1V

VDS(V) ID (mA) VD S(V) ID (mA) 1.

2.

3.

4.5.

6.

7.

8.

9.

10.

11.

12.

13.


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Exp no: Date:

FET Characteristics (CS Configuration)Aim:

A. To plot Drain (Output) characterist ics of F ield Ef fect Transistor

connected in Common Source conf igurat ion and to f ind Drainresistance (rd) .

B. To plot Transfer characterist ics of Field Effect Transistor

connected in Common Source conf igurat ion and to f ind

Transconductance (gm) and Ampli f icat ion factor ( ) .

Apparatus:

1. Regulated Power supply 0 30 V

2. FET BFW11 1 No3. Resistance 22K 1 No

1K 1 No4. Voltmeters (0 20) V 1 No

(0 30) V 1 No

5. Ammeter (0 20) mA 1 No

6. Bread Board 1 No


Procedure:

PART-A: Drain (Output) characteristics:

1. Connect the c ircui t as per t he c ircui t d i agram shown in Fig (1).

2. Set VGS = 0V by adjust ing V GG. Vary the supply voltage V D D and

note the readings of I D and VDS .

3. Repeat the second step for V GS = 1V.

4. Plot the output characterist ics V DS vs ID for constant Values of

VGS = 0V and 1 V.

5. Find Drain Resistance, tconsVI

Vr GS

D

DSd tan

.


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Transfer characteristics:

S.NoVDS = 2V VDS = 4V

VG S(V) ID (mA) VG S(V) ID (mA)

1.

2.3.

4.

5.

6.

7.

8.

9.

10.

11.

12.

13.

14.


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PART-B: Transfer characteristics:


2. Set VDS = 2V by adjust ing V DD . Vary the input voltage V GG and

note the readings of I D and VGS .

3. Repeat the second step for VD S = 4V.

4. Plot the transfer characterist ics V GS vs ID for constant values of

VDS = 2V and 4V.

6. Find the Transconductance, tconsVV

Ig DS

GS

Dm tan

and

Amplification Factor, tconsIV

VD

GS

DStan


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Model graphs:

Output (or) drain characteristics Transfer characteristics


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Result:

Drain (Output) and Transfer characterist ics of Field Effect Transistor

Connected in Common Source conf igurat ion are plotted and found

Trans Conductance, gm =

Drain Resistance, r d =

Amplif icat ion Factor, =

Precautions:

1. Dont short circuit the output terminal2. Dont give the voltage to the circuit beyond the prescribed range3. Carefully vary the power supply4. Carefully connect the FET terminals

VIVA QUESTIONS:

1. Dif ferent iate BJT and FET.2. Name the c lassi f icat ion of FETs 3. Draw the symbols of p-channel and n-channel FETs. 4. How FET acts l ike a VVR (Voltage Variable Resistor).5. Define pinch-off vol tage.6. Define Shockleys equat ion. 7. Expand MOSFET.8. Different iate Deplet ion and Enhancement MOSFETs.


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CIRCUIT DIAGRAM:

Tabular Column:

S.No IG= 0 IG= 5mA

VAK(V) IAK(mA) VAK(V) IAK(mA)

1.

2.

3.

4.5.

6.

7.

8.

9.

10.

11.

12.

13.

14.15.

16.


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Exp no: Date:

SCR CharacteristicsAim: To plot the volt-ampere characteristics of Silicon Controlled Rectifier (SCR).

Apparatus:

1. Regulated Power Supply (0-30) V - 1 No2. DC Ammeter (0-200)mA - 2 No3. DC Voltmeter (0-20)V - 1No4. SCR TYN612N - 1 No5. Resistors 20K,10K - 1 No6. Bread Board - 1 No7. Connecting Wires

Procedure:

1. Connect the circuit as shown in the figure.

2. Keep the gate open IG = 0 mA and increase RPS starting from 0V until the

current IAKbegins to rise and the voltage VAKsuddenly drops to a low value.

3. Note the readings of IAKand VAKjust before and immediately after the firing

of the SCR.

4. Repeat the steps 2 and 3 for values of IG= 5mA.

5. Tabulate the readings in the table.

6. Draw the graph between IAKand VAKtaking VAKon x-axis and IAKon y-axis.

RESULT:

Volt-ampere characteristics of Silicon Controlled Rectifier (SCR) are plotted.

Viva Questions:

1. Draw the symbol of SCR?

2. What are the applications of SCR?

3. What is holding current?

4. What is Latch current?

5. How many numbers of junctions are involved in SCR?

6. What is the function of gate in SCR?

7. When gate is open, what happens when anode voltage is increased?


46/67


CIRCUIT DIAGRAM:

Fig (1)

Tabular Column:

S.NoVB B = 5V VB B = 10V

VB E(V) IE (mA) VB E(V) IE (mA)

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

11.

12.

13.

14.


47/67


Exp no: Date:UJT Characteristics

Aim:

To plot the volt-ampere characteristics of Uni Junction Transistor (UJT).Apparatus:

1. Regulated Power supply 0 30 V

2. UJT 2N2646 1 No

3. Resistance 1K 1 No

4. Voltmeters (0 20) V 2 No

5. Ammeter (0 20) mA 1 No

6. Bread Board 1 No


Procedure:


2. Set V BB = 5V by adjust ing RPS . Vary the supply voltage V EE and

note the readings of I E and V BE .

3. Repeat the second step for VBB = 10V.

4. Plot the volt-ampere characterist ics for V B E vs IE taking VB E on y-

axis and I E on x-axis for constant Values of V B B = 5V and 10V.


48/67


Model Graph:


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RESULT:

Volt-ampere characteristics of Uni Junction Transistor (UJT) are plotted.

Viva Questions:1. Draw the symbol of UJT.

2. Differentiate UJT, BJT and FET.

3. Define intrinsic standoff ratio.

4. Name some applications of UJT.


50/67


CIRCUIT DIAGRAMFOR SELF BIAS CIRCUIT:

DESIGN PROCEDURE:

S = 25, Vcc = 12 V, Rc = 4.7K, VBE= 0.7V, RE = 1K

Find hfe() of the transistor

RB = R1R2 / (R1+R2)

S = (1+) / (1+RE/ (RE+ RB))

VB = VCCR2 / (R1 +R2)

VB = IBRB+ VBE + (1+) IB RE

ICQ =

VCC = ICRC +VCEQ + (1+) IB RE

TABULARCOLUMN:

R1 R2 VB(V) IB(A) ICQ(mA) VCEQ

OUTPUT

(Without & With

Distortion)

100K 10K

1K 10K


51/67


Exp no: Date:TRANSISTOR BIASING

Aim:

Design a Self-bias circuit for the given specifications. Find the quiescent point (OperatingPoint) values of ICq and VCEq from the experiment and to find the maximum signal handling

capability of the Amplifier.

APPARATUS:

S.No Name Range/Value Quantity

1 Dual Regulated D.C Power supply 030 Volts 1

2 Transistor BC107 1

3 Capacitors 50f 2

10f 14 Multimeter - 1

5 Function Generator (0 1MHz) 1

6 Bread Board and connecting wires - 1 Set

7 CRO 20MHz 1

PROCEDURE:

1. Connect the circuit as per the circuit diagram. Apply Vcc of 12 Volts DC.

2. Apply 1V, 1 KHz signal from the Signal Generator to the input of the circuit and

observe the ouput on CRO for given values of resistors (R1& R2).

RESULT:

Self-bias circuit is designed for the given specifications.

PRECAUTIONS:

1. Check the wires for continuity before use.

2. Keep the power supply at Zero volts before Start

3. All the contacts must beintact

Viva Questions:1. Define Biasing.

2. What is the need of biasing?

3. What are different types of biasing?

4. Define Stability factor.


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FRONT PANEL OF CRO


53/67


Exp no: Date:CRO Operation and its Measurements

Aim:

To observe front panel control knobs and to find amplitude, time period and frequency

for given waveforms.

APPARATUS:

CRO

Function generator

Probes

PROCEDURE:

1. Understand the significance of each and every knob on the CRO.

2. From the given function generator feed in a sinusoidal wave and adjust the time

base knob and the amplitude knob to observe the waveform as a function of time.

3. Measure the time period and amplitude (peak to peak) of the signal. Find the

frequency and verify if the same frequency is given from the function generator.

4. Observe two waveforms simultaneously on the two channels of a CRO.

5. Repeat the above steps for pulse and triangular waveforms.

6. Report the readings and the waveforms taken.


54/67


CALCULATIONS:

Amplitude, A = no. of vertical divisions x Volts/div

Time period, T = no. of horizontal divisions x Time/div

Frequency, F = (1/T) Hz


55/67


RESULT:

Front panel control knobs of CRO are studied and observed and found amplitude, time

period and frequency for given waveforms.

VIVA Questions:

1. How do you measure frequency using the CRO?2. Can you measure signal phase using the CRO?3. How many channels are there in a CRO?4. Can you measure DC voltage using a CRO?


56/67


Circuit Diagram:

Fig (1)

Tabular Column:

Input ac Voltage, Vi=

S.NO

Frequ

ency

(Hz)

Output

Voltage

V0

Voltage

Gain

(AV ) = V0/VI

Gain (dB)

20

log10|AV|

S.NO

Freque

ncy

(Hz)

Output

Voltage

(V0)(mV)

Voltage

Gain

(AV ) = V0/VI

Gain (dB)

20

log10|AV|

1. 50 11. 30K

2. 100 12. 50K

3. 300 13. 80K

4. 500 14. 100K

5. 800 15. 200K

6. 1K 16. 500K

7. 3K 17. 800K

8. 5K 18. 1M

9. 8K 19. 3M

10. 10K 20. 5M


57/67


Exp no: Date:

BJT - CE AmplifierAim:

1. To plot the frequency response of a Common Emitter Amplifier and to find thebandwidth.

2. To find the voltage gain, input and output resistance from frequency response

curve.Apparatus:

1. Regulated Power supply (0-30V), 1A

2. CRO 1 No

3. Function Generator 1 No

4. Transistor BC107 1 No

5. Resistors 1k 2 No

10k 2 No

100k 1 No

4.7k

1 No6. Capacitors 10 F 1 No

100 F 1 No

7. Pot Resistance 1 No

8. Bread board 1 No9. Probes10. Connecting wires

Procedure:

Frequency Response:

1. Connect the circuit as per the circuit diagram shown in fig (1).

2. Set an ac signal of peak to peak voltage Vs= 20 mv in function generator andapply it to circuit as input.

3. Note down the input voltage Viin CRO keeping probes after Rsresistance.

4. Now vary the input frequency from 50 Hz to 1 MHz and note down theamplitude of output ac signal of the amplifier using CRO.

5. Draw the frequency response curve taking Frequency on X-axis and Gain indB on Y-axis and calculate the bandwidth from the graph by drawing ahorizontal line at -3dB from maximum value of Av.

Input Resistance:1. Connect the pot resistance in series across the input terminals and keep it at

zero resistance positon as shown in the fig (2).

2. Set input ac voltage at any constant value in mid band region and measurethe input voltage in CRO called Vimax.

3. Vary the pot resistance at the input until Vimaxbecomes half of maximum inputvoltage.

4. Disconnect the pot resistance and measure the resistance which is inputresistance of amplifier.


58/67


Input Resistance circuit diagram:

Fig (2)

Output Resistance circuit diagram:

Fig (3)

Frequency Response:

Calculations:

Voltage gain (Av) = Vo/Vi =

Input resistance (Ri) =

Band width (BW) = f2f1 =

Output Resistance R0=


59/67


Output Resistance:

1. Connect the pot resistance across the output terminals shown in fig (3) andkeep it at zero resistance positon.

2. Set input ac voltage at any constant value in mid band region and measurethe output voltage in CRO called Vomax.

3. Vary the pot resistance at the output until V0maxbecomes half of maximumoutput voltage.

4. Disconnect the pot resistance and measure the resistance which is outputresistance of amplifier.

Precautions:

1. Avoid loose connections2. Carefully note the readings from CRO without parallax error.

3. Carefully connect the transistor terminals.

Result:

Frequency Response of Common Emitter Amplifier is plotted and foundVoltage gain AV =Input resistance Ri =Output resistance Ro =Bandwidth BW =

VIVA QUESTIONS:

1. What is the phase difference between input and output waveforms of CEamplifier?

2. What type of biasing is used in the given circuit?3. If the given transistor is replaced by P-N-P Can we get the output or not?4. What is the effect of emitter bypass capacitor on frequency response?5. What is the effect of coupling capacitor?6. What is the region of transistor so that it operates as an amplifier?7. Draw the h-parameter model of CE amplifier.


60/67


Circuit Diagram:

Fig (1)

Tabular Column:

Input ac voltage, Vi=

S.NO

Frequ

ency

(Hz)

Output

Voltage

V0(mV)

Voltage

Gain

(AV ) = V0/VI

Gain (dB)

20

log10|AV|

S.NO

Freque

ncy

(Hz)

Output

Voltage

(V0)(mV)

Voltage

Gain

(AV ) = V0/VI

Gain (dB)

20

log10|AV|

1. 50 11. 30K

2. 100 12. 50K

3. 300 13. 80K

4. 500 14. 100K

5. 800 15. 200K

6. 1K 16. 500K

7. 3K 17. 800K

8. 5K 18. 1M

9. 8K 19. 3M

10. 10K 20. 5M


61/67


Exp no: Date:EMITTER FOLLOWER-CC Amplifier

Aim : 1. To plot the frequency response of a Common Collector (CC) Amplifier.

2. To find the input and output resistance of CC amplifier using frequency

response curve.Apparatus:

1. Regulated Power supply (0-30V)

2. CRO 1 No


4. Transistor BC107 1 No

5. Resistors 1k 2 No

10k 2 No

100k 1 No

6. Capacitors 10 F 2 No



Procedure:

Frequency Response:





5. Draw the frequency response curve taking Frequency on X-axis and Gain indB on Y-axis.

Input Resistance:

1. Connect the pot resistance in series across the input terminals and keep it at

zero resistance positon as shown in the fig (2).





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Fig (2)


Fig (3)

Frequency response:

Calculations:

Input resistance, Ri=

Output Resistance, R0=


63/67


Output Resistance:



3. Vary the pot resistance at the output until V0maxbecomes half of maximum

output voltage.


Precautions:

1. Avoid loose connections

2. Carefully note the readings from CRO without parallax error.


Result:

Frequency Response of Common Emitter Amplifier is plotted and found

Input resistance Ri =Output resistance Ro =

Viva Questions:

1. What is the other name of cc amplifier

2. Why it is called emitter follower

3. What is efficeincy of CC amplifier

4. What is the current gain of CC amplifier

5. What is the voltage gain of CC amplifier

6. What is the input resistance of CC amplifier

7. What is the out put resistance of CC amplifier


64/67


CIRCUIT DIAGRAM:

Fig (1)

TABULAR COLUMN:

Input ac voltage, Vi=

S.NO

Frequ

ency

(Hz)

Output

Voltage

V0(V)

Voltage

Gain

(AV ) = V0/VI

Gain (dB)

20

log10|AV|

S.NO

Freque

ncy

(Hz)

Output

Voltage

(V0)(mV)

Voltage

Gain

(AV ) = V0/VI

Gain (dB)

20

log10|AV|

1. 50 11. 30K

2. 100 12. 50K

3. 300 13. 80K

4. 500 14. 100K

5. 800 15. 200K

6. 1K 16. 500K

7. 3K 17. 800K

8. 5K 18. 1M

9. 8K 19. 3M

10. 10K 20. 5M


65/67


Exp no: Date:FET-CS Amplifier

Aim : 1. To plot the frequency response of a Common Source (CS) Amplifier and to

find the bandwidth.

2. To find the input and output resistance of CS amplifier from frequencyresponse curve.

Apparatus:

1. Regulated Power supply (0-30V)

2. CRO 1 No


4. Transistor BFW11 1 No

5. Resistors 1M 1 No

6.8k 2 No

6. Capacitors 10 F 2 No100 F 1 No



Procedure:

Frequency Response:





5. Draw the frequency response curve taking Frequency on X-axis and Gain indB on Y-axis on a semilog graph and calculate the bandwidth from the graphby drawing a horizontal line at -3dB from maximum value of Av.

Input Resistance:

1. Connect the pot resistance in series across the input terminals and keep it atzero resistance positon as shown in the fig (2).





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Fig (2)


Fig (3)

Frequency Response:

Calculations:Voltage gain (Av) =Vo/Vi =


Band width (BW) = f2f1 =



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Output Resistance:



3. Vary the pot resistance at the output until V0maxbecomes half of maximum

output voltage.


Precautions:

1. Avoid loose connections

2. Carefully note the readings from CRO without parallax error.


Result:

Frequency Response of Common Source Amplifier is plotted and found

Voltage gain (Av) =


Band width (BW) =


Viva Questions:

1. What are advantages of CS configuration?

2. What are the applications of CS amplifier?

3. Compare BJT and JFET.

4. Why there is 1800phase shift in CS amplifier.

Edc Lab Observation Gpcet (2016-17)

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