1 2 3 TO-220 TAB G(1) C(2, TAB) E(3) G1C2TE3 Features • 10 μs of minimum short-circuit withstand time • V CE(sat) = 1.85 V (typ.) @ I C = 15 A • Tight parameter distribution • Positive V CE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: T J = 175 °C Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP15M120F3 Product summary Order code STGP15M120F3 Marking G15M120F3 Package TO-220 Packing Tube Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package STGP15M120F3 Datasheet DS11255 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com
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Datasheet - STGP15M120F3 - Trench gate field-stop, 1200 V ... · Continuous collector current at TC = 100 °C 15 A ICP(1) Pulsed collector current 60 A VGE Gate-emitter voltage ±20
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1 23
TO-220
TAB
G(1)
C(2, TAB)
E(3)
G1C2TE3
Features• 10 μs of minimum short-circuit withstand time• VCE(sat) = 1.85 V (typ.) @ IC = 15 A• Tight parameter distribution• Positive VCE(sat) temperature coefficient• Low thermal resistance• Maximum junction temperature: TJ = 175 °C
DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimalbalance between inverter system performance and efficiency where the low-loss andthe short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer parallelingoperation.Product status link
STGP15M120F3
Product summary
Order code STGP15M120F3
Marking G15M120F3
Package TO-220
Packing Tube
Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package
STGP15M120F3
Datasheet
DS11255 - Rev 3 - August 2018For further information contact your local STMicroelectronics sales office.
1. Including the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device.2. Including the tail of the collector current.
STGP15M120F3Electrical characteristics
DS11255 - Rev 3 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
Ptot
150
100
50
00 50 100
(W)
200
150 TC(°C)
250 VGE ≥ 15 V, TJ ≤ 175 °C
GIPD271020141420FSR
Figure 2. Collector current vs case temperature
IC
15
10
5
00 50 100
(A)
20
150 TC(°C)
25
VGE ≥ 15 V, TJ ≤ 175 °C30
GIPD291020141132FSR
Figure 3. Output characteristics (TJ = 25 °C)
IC
40
30
10
00 1 3
(A)
2 4
50
VCE(V)
20
9V
11V
13VVGE=15V
5
GIPD291020141140FSR
Figure 4. Output characteristics (TJ = 175°C)
IC
40
30
10
00 1 3
(A)
2 4
50
VCE(V)
20
9V
11V
13V
VGE=15V
5
7V
GIPD291020141151FSR
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
2.0
1.2-50 0 100
(V)
50 150
2.4
TC(°C)
1.6
2.8
VGE=15V
IC=7.5A
IC=30A
IC=15A
3.2
GIPD291020141158FSR
Figure 6. VCE(sat) vs collector current
1.6
0.80 5 1510 20
2.0
IC(A)
1.2
2.4
VGE=15V Tj=175°C
Tj=25°C
Tj=-40°C
25
VCE(sat) (V)
2.8
3.2
GIPD291020141315FSR
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 5/15
Figure 7. Collector current vs switching frequency
IC
40
30
10
01
(A)
10 f(kHz)
20
TC=80°C
TC=100°C
Rectangular current shape,(duty cycle=0.5, Vcc= 600V Rg=22Ω, Vge=0/15V, Tj=175 °C)
GIPD291020141321FSR
Figure 8. Safe operating area
IC
10
1
(A)
10 VCE(V)1
10µs
100µs
1ms
100
Single pulse, Tc=25°CTj<175°C, VGE=15V
1µs
1000
GIPD291020141330FSR
Figure 9. Transfer characteristicsIC
40
30
10
03
(A)
5 VGE(V)
20
Tj=175°C
Tj=25°C
7
50
9 11
VCE = 8V
GIPD291020141347FSR
Figure 10. Normalized VGE(th) vs junction temperature
VGE(th)
0.8
1.1
-50
(norm)
TC(°C)0.7
0
0.9
1.0
50 100 150
VCE=VGE
IC=500µA
GIPD291020141405FSR
Figure 11. Normalized V(BR)CES vs junction temperature
V(BR)CES
1.04
0.88-50
(norm)
TC(°C)
1.0
0 50 100 150
IC=2mA
0.92
0.96
GIPD291020141443FSR
Figure 12. Capacitance variations
C(pF)
10
0.1 VCE(V)
1000
1 10
100
Cies
Coes
Cres
1100
f= 1MHz
GIPD291020141507FSR
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 6/15
Figure 13. Gate charge vs gate-emitter voltage
VGE(V)
00 Qg(nC)20 40
4
8
12
16
10 5030
VCC = 960 VIC = 15 AIG = 1 mA
GIPD291020141517FSR
Figure 14. Switching energy vs collector current
E(mJ)
00 IC(A)
0.5
5 10
1
15 20
VCC=600V, VGE=15VRg=22Ω, Tj=175°C
1.5
2
2.5
Eon
Eoff
25 30
GIPD291020141521FSR
Figure 15. Switching energy vs gate resistance
E(mJ)
0 Rg(Ω)
1
20 400.8
1.2
60 80
VCC=600V, VGE=15VIC=15A, Tj=175°C
1.4
1.6
1.8Eon
Eoff
100
GIPD291020141526FSR
Figure 16. Switching energy vs junction temperature
E(mJ)
TJ(°C)
0.6
500.5
0.7
100
VCC=600V, VGE=15VIC=15A, Rg=22Ω
0.8
0.9
1Eon
Eoff
1500
1.1
GIPD291020141532FSR
Figure 17. Switching energy vs collector emitter voltage
E(mJ)
200 VCE(V)
1.1
400 6000.3
1.9
800
VGE=15V, Tj=175°CIC=15A, Rg=22Ω
Eon
Eoff
0.7
1.5
GIPD291020141536FSR
Figure 18. Short-circuit time and current vs VGE
tsc(µs)
9 VGE(V)
30
10 1110
12
VCC ≤ 600VTJ ≤150 °C Isc
tsc
20
40
13 14 15
60
20
40
80
Isc(A)GIPD291020141543FSR
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 7/15
Figure 19. Switching times vs collector current
t(ns)
0 IC(A)5 101
15 20
VCC=600V,Tj=175°C,
VGE=15VRg=22Ω
tdoff
tdon
10
tf
tr
25 30
100
GIPD291020141715FSR
Figure 20. Switching times vs gate resistance
t(ns)
0 Rg(Ω)20 40
10
60 80
VCC=600V,Tj=175°C,
VGE=15VIC=15A
tdoff
tdon
100
tr
tf
1001
GIPD291020141725FSR
Figure 21. Thermal impedance
10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 8/15
3 Test circuits
Figure 22. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 23. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 24. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
TonTr(Ion)
Td(off)
ToffTf
Tr(Voff)
Tcross
90%
10%
STGP15M120F3Test circuits
DS11255 - Rev 3 page 9/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.