Workshop on "Physics for Renewable Energy" October 17 - 29, 2005 301/1679-2 ___________________________________________________________________________ Crystalline Silicon Solar Cells A. Goetzberger Fraunhofer Institut for Solar Energy Systems Germany
13
Embed
Crystalline Silicon Solar Cells - International Centre for ...indico.ictp.it/event/a04253/session/7/contribution/4/material/0/0.pdf · • 1954 First silicon solar cell at Bell Laboratories
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
A. Goetzberger Fraunhofer Institut for Solar Energy Systems
Germany
ICTP Workshop 2005
Crystalline Silicon Solar Cells
Adolf Goetzberger
Fraunhofer-Institut fürSolare Energiesysteme ISE
Workshop on Physics for'RENEWABLE ENERGY'
October 17 - 29, 2005
Miramare-Trieste, Italy
ICTP Workshop 2005
Contents
1. History2. Physics of silicon solar cell3. Characteristics and equivalent circuit4. Materials5. Solar cell structures, loss mechanisms6. High efficiency cells7. Importance of efficiency8. Future developments
ICTP Workshop 2005
History of silicon solar cells
• 1839 first photovoltaic effect discovered by Edmond Becquerel• 1904 physical explanation by Albert Einstein• 1954 First silicon solar cell at Bell Laboratories by Chapin, Fuller and
Pearson. 6% efficiency which was soon increased to 10%• 1961 first fundamental theory by Shockley and Queisser based on
detailed balance.• 1991 first high efficiency silicon cell (?<20%) by M. Green.
• ……..
• ……..
ICTP Workshop 2005
Properties of silicon as a solar cell material
• Advantages– Unlimited supply of raw material– Well developed materials and device technology– Well developed understanding of physics– High solar cell efficiency– Well established long term solar cell stability
• Disadvantages– Low light absorption coefficient because of indirect band structure– Large thickness of material required– High cost of silicon wafers– At present shortage of solar grade silicon
ICTP Workshop 2005
Carrier distribution at pn junction
ICTP Workshop 2005
Diffusion gradients of minority carriers
ICTP Workshop 2005
Front Contact
Emitter
Back Contact
Anti Reflection Layer
Back Surface Field
Base
ICTP Workshop 2005
Solar cell characteristics
ICTP Workshop 2005
Fundamental relations
I = I0(exp(VA/VT) -1)
I = I0(exp(VA/VT) -1) - IL
Voc = VT ln (IL / I0 + 1)
Efficiencylight
ocsc
light
m
P
VFFI
P
V==
mIη
I0=Diode saturation current
VA = Applied voltage
VT = Therm. Voltage (const)
IL = Light induced current
ICTP Workshop 2005
Equivalent circuit of solar cell
ICTP Workshop 2005
Crystal pulling apparatus Si casting apparatus
seed holder
seed
crystal neck
shoulder (cone)
thermalshield
heater
cruciblesusceptor
crucible
silicon meltAr + SiO + CO Ar + SiO + CO
(SiO)
Ar Ar
(SiO)
<Si>
crucible shaft
(Si)
ICTP Workshop 2005
Multiple wire saw
ICTP Workshop 2005
ICTP Workshop 2005
High efficiency solar cell
Metal grid
p-base
Aluminium
SiO2
Local back surface field
Emitter
Inverted pyramids
SiO2
ICTP Workshop 2005
The buried contact solar cell
ICTP Workshop 2005
The point contact solar cell
n+-diffusion
n-base
passivation layer
n-contact
n+-diffusion
p+-diffusion
p-contact
contact holesin passivation layer
passivation layer
ICTP Workshop 2005
The hetero junction solar cell (HIT) by Sanyo
TCO
a – Si : H (n+, p+)
c – Si (p, n)
metal
a – Si : H (p+, n+)
grid
ICTP Workshop 2005
The emitter wrap through solar cell
p-contact
n-contact
n+-diffusion
p-base
via hole (open)
passivation layer
n+-diffusion
ICTP Workshop 2005
The metal wrap through cell
p-contact
n-grid
n+-diffusion
p-base
via hole
(filled with metal)
passivation layer
n+-diffusion
n-bus
ICTP Workshop 2005
Crys. Si + Modules
0
5
10
15
20
25
30
1940 1960 1980 2000 2020 2040 2060
Year
Eff
icie
nc
y Si cell eff.
Prod. modules
Lim. Eff.= 21%
η(t) = ηL(1 – exp((a0-a)/c))
ICTP Workshop 2005
Long term efficiency development
Efficiency for all technologies
0
5
10
15
20
25
30
35
40
1940 1960 1980 2000 2020 2040 2060
year
effic
iency
Cryst. Si
CIGS
a-Si
Org. Cell
Lim. Eff. = 42%
Thin Si
3rd gen. PV
ICTP Workshop 2005
Market growth of solar cell technologies
ICTP Workshop 2005
Learning curve for module prices
ICTP Workshop 2005
Future developments
• Short term: Lower cost– Thinner wafers– Further enhancement of efficiency by adapting high efficiency
techniques to production– New solar cell structures
• Long term– Crystalline thin film cells– Spectrum conversion to utilize solar spectrum more completely
• Crystalline silicon cells will dominate the market for a very long time