CMOS RFIC Design for Direct Conversion Receivers Zhaofeng ZHANG.

CMOS RFIC Design for Direct Conversion

Receivers

Zhaofeng ZHANG

Outline of Presentation

• Background Introduction

• Design Issues and Solutions

• A Direct Conversion Pager Receiver • Conclusion

Research Goal

• Low Cost– Process: CMOS

• Device is good enough• Improved passive components

– Integration level• Minimize external components• Minimize IC area and pin numbers

• Low Power– High integration = low power– Low power individual block design– System architecture is important

Heterodyne Receivers

• High IF: more than 2 down-conversions– Best sensitivity– Need off-chip image-rejection SAW filters and

channel-selection filters– Highest cost, high power, low integration

• Low IF– Relaxed image-rejection requirement compared to

high-IF– No DC offset problem– Quadrature LO is required– Flicker noise may be a problem– High integration level, low cost

Homodyne Receivers

Simple architecture No image problem No 50ohm interfaces High integration level Lowest cost, low power

DC offsets Flicker noise LO leakage Even-order distortion

ProsCons

90º

I

Q

LNA

Origin of Problem

DC offsets Flicker noise LO leakage Even-order distortion Linearity requirement Noise requirement IQ mismatch

The mixer: the most critical component!

All problems are limited by the mixer design!

Our research focus!

DC Offsets & LO Leakage

+ Offset

• The offset originates from self-mixing.• It can be as large as mV range at the mixer output.• It varies with the environment and moving speed of the mobile and changes with time. • The maximum bandwidth can be as large as kHz range.• LO leakage forms an interference to other receivers.

LO Leakage

Zero IF

Pow

er

Narrow Band Broad Band

Frequency

Pow

er

Frequency

Pow

er

Frequency

Pow

er

Frequency

Signal

DC

Off

sets

Off

set-

Free

DC offset

Spectrum Illustration

Flicker noise

High-pass corner

Existing Solutions on DC Offset

• AC coupling or high pass filtering• Autozeroing or double sampling• Offset cancellation in digital domain• Double LO frequency method [ISSCC99]

• Adaptive dual-loop algorithm combined with the mixer [RAWCON00]

• Pulse-width-modulation based bipolar harmonic mixer [CICC97]

However, these methods are either not so effective or too complicated, or not suitable

for CMOS process.

Proposed Harmonic Mixing

Con

ven

tion

al

Our

Work

flo=frf

RF Signal

frf

BB Signal

0

2flo=frf

RF Signal

frf

BB Signal

0

LO Leakage DC Offset

LO Leakage

flo=frf/2 flo

Square-law Based Mixer

• LO leakage free.• Ideally self-mixing free.• Current controlled switching.• No noise contribution from LO stage.

LO

2

RF IF

Current

Voltage

Voltage

CouplingNo

Vlo+ Vlo-

Vrf+ Vrf-

3V

Flicker Noise Reduction

• Flicker noise is proportional to the current.• Current injection is used to reduce flicker noise.• No noise contribution from current source too.

Vrf+I0

Vlo+ Vlo-

Vrf-

3V

Offset Cancellation20

10

0

-10

-20

-30

-40-22 -20 -18 -16

LO Input Power (dBm)

Gai

n (

dB

) >35dB

TSMC0.35

Noise Performance60

50

40

30

20400 600 800 1000

Injected Current I0 (A)

No

ise

Fig

ure

@ 1

0kH

z (d

B)

How to improve more?

• However, flicker noise is still too large due to CMOS devices, minimum noise figure achieved is larger than 24dB @ 10kHz for CMOS harmonic mixer. It requires a high gain and low noise LNA to overcome flicker noise while the front-end linearity suffers.

• For a narrow-band communication system such as FLEX pager, the noise requirement at low frequency is very tough.

• It is well known that bipolar device is a good candidate to eliminate flicker noise.

• But, can we do it in a CMOS process and how good is the device? YES!

Lateral Bipolar Transistor in a Bulk CMOS Process

W.T. Holman95

Gate

Emitter

Collector

Base

Ground

P+ N+

Emitter

Vertical

Collector

Collector

Lateral

Base

Gate

Physical Model of LBJT

D. Mac98

P-Sub

Gate

EmitterCollector

Base Base

P-Sub

M1Q1

Q2Q3

Pure LBJT: M1, Q3 off, Q1, Q2 on.

Gummel Plot of LBJT

TSMC0.35

>40 at mAs

max fT 4GHz

LBJT Harmonic Mixer

RLRL

OUT- OUT+

VRF+ VRF-

Ii

VLO-VLO+ M1 M2

VDD

Q1 Q2

Noise Performance

Large LO improves noise.

Even Order Distortion

RF Signal

frf

BB Signal

0

Interference IM2 (f2-f1)

• It is mainly introduced by layout asymmetry and device mismatch.• Since direct-conversion, the intermodulation components IM2 will fall into the demodulated signal spectrum.• Therefore, good IIP2 is required for homodyne receivers.• It is found that varying the loading resister or voltage bias can compensate the device mismatch and improve IIP2 significantly.

a1x+a2x2+a3x3+…

f1 f2

IIP2 Improvement

IIP2=18dBm IIP2>40dBm

Same DC bias Compensation

LBJT Mixer Performance

Technology TSMC 3M2P 0.35m

VDD 3V

Signal Gain +15dB

DC offset suppression >30dB

Noise figure @ 10kHz <18dB

1dB compression point >-20dBm

Input-referred IP3 >-9dBm

Input-referred IP2 >+40dBm

Power consumption <2.2mW

Summary on Mixer

• Flicker noise free, corner frequency is below 10kHz.

• DC offset free, more than 30dB DC offset suppression is achieved.

• No LO leakage problem.• Sufficient IIP2 after bias compensation.• High gain and low power consumption.• Complete CMOS process.• Suitable for CMOS direct conversion

applications.

Difficulties in FLEX PagerFLEX 6400, 4FSK

0

-20

-40

-60

dB

1050-5-10kHz

• Narrow band modulation• Significant energy near DC• High pass filtering is not viable• DC offset problem• Flicker noise is significant

10 -1

10 -2

10 0

BE

R

Eb/N0 (dB)4 8 12 16

DC

Off

set

Eff

ect

Hig

h p

ass

eff

ect

High pass corner (Hz)

BE

R @

12

dB E

b/N

0

-210

-1

Big Challenges

4-FSK Pager Receiver

• Fully differential architecture to reject substrate noise.• Harmonic mixers are used to solve time-varying DC offset.• Peak detectors are used to cancel static DC offset.• High front-end gain and current injection to reduce flicker noise.

45

AGC

AGC

LNA DEMODVCO

RF: Zhaofeng

BB: Zhiheng

LNA

• Non-quasi-static phenomenon makes it unnecessary to do on-chip matching.

• Off-chip matching by a single inductor and a balun.

• |S11|<-20dB @ 930MHz

• Both on-chip and off-chip inductive loads were tried.

Double Balanced Mixer

Improve the linearity; Provide constant impedance to LNA;Current injection provides more than 20dB flicker noise reduction.

Ring Oscillator

Half RF frequency,

Provide 45 phase.

Static DC Offset Cancellation

Peak Detector

Fmin200Hz

Zero-IF 4-FSKSignal

Performance SummaryPager receiver with off-chip ind

Maximum Gain: 62dB

Noise figure@10kHz: 14.5dB

Overall DC offset at LPF output: <1mV

(Signal: 400mV)

Power dissipation: 58mW

Technology: TSMC0.35m 4M2P

Die area: 4.6 mm2

Front-End Off-chip ind On-chip ind

RF/BB gain: 51.13dB 40.33dB

NF@10kHz: 11.5dB 24.0dB

NF@100kHz: 5.8dB 15.0dB

IIP3: -26dBm -20.7dBm

IIP2: -10dBm -5.6dBm

Operating frequency: 930.1MHz

LO frequency: 465MHz

IQ gain mismatch: < 0.3dB

IQ phase mismatch: < 5

RF/BB over LO/BB: > 54dB

Self-mixing free

Input matching: < -20dB

Power dissipation: 52.76mW

Baseband (Zhiheng)

AGC gain: -14.5dB~18.6dB

LPF: Pass-band gain-6.2dB, ripple .5dB (9kHz)

Stop-band attenuation 63dB ( 17.8kHz)

Offset cancellation: <2mV (under ±100mV input offset)

Input Referred Noise: 600nV/ @ 10kHz

Clock Recovery: Capture range > 550Hz

Power dissipation: 5.4mW (including all testing buffers)

Hz

Die Photo

DE

MO

D

LP

F

AG

C

Mixer

OS

C

LN

A

LN

A

OS

C

Mixer

Base Band Circuitry[Zhiheng]

RF Front-End

RF Front-End

45

AGC

AGC

LNA DEMODVCO

Summary on Pager Receiver

• Feasibility of direct conversion has been demonstrated.

• Proposed harmonic mixing technique solves self-mixing induced DC offset problem successfully.

• With the help of static DC offset cancellation, the total DC offset is less than 1mV at the receiver output.

• The modified ZIFZCD 4-FSK demodulator functions correctly.

• A 4-FSK FLEX pager receiver in a single chip has been implemented successfully.

Conclusion

• Circuit design for direct-conversion has been discussed.– DC offset: more than 30dB improvement– LO leakage: no longer a problem– Flicker noise: corner frequency is less than kHz

due to lateral bipolar device.– IIP2: larger than +40dBm after bias compensation.

• System on chip has been successfully demonstrated using CMOS direct conversion architecture.