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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    109

    Chapter 5 Frequency Response of InjectionLocked Semiconductor Ring Lasers

    Theoretical study for frequency response and modulation bandwidth of slave SRL in

    the master-slave configuration using optical injection locking has been investigated.

    It has been proved that the frequency response of injection locked SRL depends on the

    detuning frequency and optical injection ratio between the master laser and slave

    SRL. Enhancement in the modulation bandwidth of >100GHz is found between

    negative to positive detuning and increasing injection power ratio.

    5.1 IntroductionIn optical communication systems, one of the most important figures of merit that

    decides the achievable data rate is the modulation bandwidth of the semiconductor

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    110

    laser. Recently a number of works have been proposed that suggests that the

    modulation bandwidth of strongly injection locked semiconductor lasers can be

    significantly enhanced as compared to direct modulation [1], [5]- [7].

    Usually an isolator is placed between the master and slave laser to stop the light

    coming from the slave laser into the master laser. SRL works in the direction of

    receiving optical injection thus it eliminates the need of isolator [13]. The frequency

    response and the modulation bandwidth of SRL are investigated in detail

    experimentally in chapter 4. Theoretical study of the frequency response of OIL-SRL

    is presented in this chapter. Various parameters that affect the 3-dB bandwidth in

    injection locked SRL are considered. It has been proved using different modulation

    schemes (direct modulation, amplitude modulation and phase modulation) that OIL

    SRL as a slave in the master-slave configuration has huge bandwidth. At the end

    chirp-to-power ratio and parasitic amplitude modulation due to phase modulation

    response are discussed.

    The fundamental theory has been developed in the past by a number of research

    groups and can illustrate a wide range of benefits from the optical injection locking,

    including RIN reduction [4], suppression of non-linear effects [2], and resonance

    frequency enhancement [4]. Strong optical injection locking has also been studied for

    the enhancement of bandwidth [1]-[6] and the expression for the frequency response

    has been derived for various modulation formats such as direct modulation, amplitude

    modulation and phase modulation in the optical injection locked semiconductor lasers

    [6],[13].

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    111

    Semiconductor Ring Laser operates in clockwise (CW) or counter-clockwise (CCW)

    directions as discussed in detail in previous chapters. Single transverse mode and

    single longitudinal mode operation have been shown experimentally when SRL works

    in the unidirectional region [10]. As this chapter focuses on the theoretical analysis of

    the frequency response of an injection locked SRL, only single longitudinal operation

    in SRL needs to be considered and the two counter-propagating single mode model is

    sufficient for the analysis.

    In the single mode operation, at the same wavelength SRL supports only two counter-

    propagating modes. The basic model for describing two mode dynamics in SRL was

    introduced in early parts of the last decade [8]-[10], [13].

    5.2 Basic Rate equationsThe rate equations can be obtained using [8] for most of the SRLs as far as they are

    not operated in sub- pico-second regime. Subsequently the polarization dynamics can

    be removed adiabatically as intra-band processes have to be taken into the account

    [11]. The set of differential equations governing a free-running SRL i.e. without any

    external injection can be given as:

    ( )( )

    ( )

    2 211 2 1

    1

    ( ) 1 1(1 ) 1 ( )

    2

    ( )

    g n tr s c

    p

    f th

    dE tj v g N N E E E t

    dt

    j E t

    =

    +

    (5.1)

    ( )( )

    ( )

    2 222 1 2

    2

    ( ) 1 1(1 ) 1 ( )

    2

    ( )

    g n tr s c

    p

    f th

    dE tj v g N N E E E t

    dt

    j E t

    =

    + (5.2)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    112

    ( ) ( ) ( )2 2 2 2 2 2

    1 2 1 2 1 21 ( ) ( ) ( ) 1 ( ) ( ) ( )

    i

    N

    g n tr s c s c

    IdN N

    dt qV

    v g N N E t E t E t E t E t E t

    =

    +

    (5.3)

    where 1( )E t and 2 ( )E t represent the complex fields of the mode 1 (CCW direction)

    and the mode 2 (CW direction) respectively. is the frequency of the free-running

    longitudinal mode,

    is the line-width enhancement factor [12] that accounts for the

    phase-amplitude coupling in the semiconductor medium, is the optical confinement

    factor which provides the spatial overlap between the active gain volume and the

    optical mode volume,gv represents the group velocity, ng is the differential gain at

    transparency, N is the carrier density, trN accounts for the carrier density at

    transparency, s and c are self-gain saturation and cross-gain saturation coefficients

    respectively. p is the photon lifetime in the laser cavity. th is the resonance

    frequency at threshold. i represents the injection efficiency of the bias currentI, q is

    the electron charge in the volume of active region V, N is the carrier lifetime. The

    carrier life N can be given as:

    2

    1N

    th thA BN CN =

    + +

    Where thN , A, B and C represent carrier density at threshold, Non-radiative

    coefficient, radiative coefficient and Auger recombination coefficient respectively.

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    113

    Spontaneous emission is neglected due to the fact that SRL is biased high above the

    threshold current in the unidirectional region [8].

    5.3 Rate equations with external optical injectionAssuming that the external optical injection from the master laser is added in the

    lasing CCW direction, the optical field in this direction becomes stronger and its

    phase may locked to that of the injected light and finally slave SRL will be locked to

    the master laser a soon as the locking conditions are satisfied. The set of differential

    equations governing the complex field of the injection locked SRL is similar to that of

    free-running SRL in equations (5.1)-(5.3), with addition of the injection terms in the

    CCW direction as discussed in [13].

    ( ) ( )2 2

    11 2 1

    1

    ( )1 1(1 ) 1 ( )2

    ( ) ( )

    g n tr s c

    p

    inj inj inj

    dE tj v g N N E E E t

    dt

    E t j E t

    =

    +

    (5.4)

    ( )( )

    ( )

    2 222 1 2

    2

    ( ) 1 1(1 ) 1 ( )

    2

    ( )

    g n tr s c

    p

    f th

    dE tj v g N N E E E t

    dt

    j E t

    =

    +

    (5.5)

    ( ) ( ) ( )2 2 2 2 2 21 2 1 2 1 21 ( ) ( ) ( ) 1 ( ) ( ) ( )

    i

    N

    g n tr s c s c

    IdN N

    dt qV

    v g N N E t E t E t E t E t E t

    =

    + (5.6)

    where ( )in jE t is the injected master optical field, inj is the detuning frequency and

    it can be defined asinj M f

    = , where is lasing frequency of the master

    laser.in j

    accounts for the field coupling coefficient of the optical injection into the

    SRL cavity and it can be defined as:

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    114

    1in j

    l

    T

    T

    = (5.7)

    Where T is the power transmission rate of the coupler from the cavity to the output

    waveguide (and vice versa) and l is the round-trip time in the laser cavity

    (gcavl vL /= ).

    Without loss of validity, equation (5.5) may be neglected as it is the field in the non-

    lasing CW direction, there is no injection in this direction and it is very small as

    observed experimentally. The field equation (5.4) can be split into the field

    magnitude and phase by assuming ( )1( ) ( )j tE t S t e , where S (t) is the photon

    density of SRL in CCW direction and ( )t is the phase of SRL in CCW direction

    relative to nominal master laser phase. Similarly the injection field can be split into

    ( )( ) ( ) inj

    j t

    inj injE t S t e , where ( )

    in jS t is the photon density of injection light of the

    master laser into the slave SRL and ( )inj t is the time-dependant master laser phase.

    So the set of equations (5.4)-(5.6) can be re-written as:

    ( )( )

    ( )

    ( ) ( )( ) 1 ( ) ( )

    2 ( ) ( ) cos ( ) ( )

    g n tr s

    p

    inj inj inj

    dS t S t v g N t N S t S t

    dt

    S t S t t t

    =

    +

    (5.8)

    ( ) ( )

    ( )

    ( )( ) 1 ( )

    2 2

    ( )sin ( ) ( )

    ( )

    g n tr s

    p

    in j

    inj inj inj

    d tv g N t N S t

    dt

    S tt t

    S t

    =

    (5.9)

    ( )( )( )( ) ( )

    ( ) 1 ( ) ( )i g n tr sN

    I tdN t N t v g N t N S t S t

    dt qV

    = (5.10)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    115

    5.4 Steady State SolutionsWhilst solving the rate equations (5.8)-(5.10) for steady state solution, Murakami et

    al. [17] has described three equations to solve differential equations in the steady-state

    for field magnitude, phase and the carrier density respectively. Similar method is also

    used to determine the steady-state solution involving both directions of the SRL [13].

    The same technique is to determine the steady-state solution but with slightly different

    results in the direction of injection.

    The product sS is4

    5.4 10 to 38 10 from free-running to strong optical injection

    respectively. This product 1sS and has no significant effect. Thus for the steady-

    state solution and small signal analysis, the terms involving sS in equations (5.8) to

    (5.10) may be neglected.

    Solving for the free-running steady state solution, we can set the derivatives and the

    injection terms to zero in equations (5.8) to (5.10) thus the analytic solution for

    photon density can be given as:

    fi

    f pN

    NIS

    qV

    =

    (5.11)

    And

    1f tr

    p g n

    N Nv g

    = +

    (5.12)

    For the external optical injection from the master laser,0inj

    is assumed to be zero so

    the dc SRL phase 0 represents the total dc phase of the master and slave lasers.

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    116

    Using the above results and solving equations (5.8)-(5.10) with external optical

    injection, the steady state solution can be found in the similar fashion as:

    01

    p

    f

    N

    p g n

    NS

    Sv g N

    =+

    (5.13)

    ( )

    arctan

    1

    arcsin

    2

    0

    0

    0

    +

    =

    S

    Sinjinj

    inj(5.14)

    0

    0

    0

    2cos

    inj inj

    g n

    SN

    v g S

    =

    (5.15)

    Where0S , 0 and N are photon density, phase and carrier density difference

    respectively at steady state of injection locked SRL. Steady state value of carrier

    density is 0N N N = + and 0 /inj f S S is the injection ratio. The convenient

    method is to choose injection ratio and phase value. According to Mogensen [18], the

    bounds of the phase across the injection locking range are approximately1cot to

    / 2 from negative to positive frequency detuning edge respectively. Using the

    value of0 and N(equation 5.15) into (5.13), we can solve easily for 0S as:

    3 20 1 0 2 0 3 0A A A = (5.16)

    Where

    0 0S=

    1 02 cosinj p injS =

    2S =

    3 02 cos

    p

    inj injN g n

    Sv g

    =

    (5.17)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    117

    Detuning frequency can be determined using equation (5.14) as:

    ( ) ( )2

    00 1 sin arctan

    inj

    inj inj

    S

    S = + +

    (5.18)

    Derivation of steady-state equations is given in appendix-I.

    5.5 Small Signal AnalysisFor small signal analysis, small perturbations may be added to all time dependant

    terms around their steady-state values.

    ( ) ( )0 expS t S S j t = +

    ( ) ( )0 expt j t = +

    ( ) ( )tjNNtN exp0 +=

    ( ) ( )tjSStS injnjinj exp0 +=

    ( ) ( )0 expinj inj injt j t = +

    ( ) ( )tjIItI exp0 += (5.19)

    where ( ), ( ), ( )S t t N t represent the output state variables while ( ), ( ), ( )inj injI t S t t are

    the input state variables of the system.0 0 0 0 0 0, , , , ,

    inj injS N I S may be considered as

    the steady-state values and , , , , ,inj injS N I S represent the small-signal

    magnitudes. The input perturbation terms are modulated separately so that the

    modulated perturbation magnitudes may be considered as real phasors.

    Physically I denotes the direct modulation of current,inj

    S is the amplitude

    modulation andinj

    represents the phase modulation of the master laser injected into

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    118

    the slave SRL. S and represent output modulation magnitude and phase of the

    slave SRL respectively.

    By linearising equations (5.8)-(5.10) the differential equation system may be placed in

    the matrix form as:

    1XM

    S

    N

    =

    (5.20)

    Where M is the state transition matrix and it can be given as:

    11 12 13

    21 22 23

    31 32 33

    M

    a j a a

    a a j a

    a a a j

    + = + +

    The elements of state transition matrix M can be given as:

    11 0

    12 0 0

    13 0

    21 0

    0

    22 0

    23

    31 0

    32

    33 0

    cos

    2 sin

    1sin

    2

    cos

    2

    12 cos /

    0

    1

    g n

    g n

    p

    g n

    N d

    a z

    a zS

    a v g S

    za

    S

    a z

    a v g

    a z

    a

    a v g S

    =

    =

    =

    =

    =

    =

    =

    =

    = +

    (5.21)

    Where0

    inj

    inj

    S

    z S= , andNd is differential carrier life time and it can be given as:

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    119

    2

    0 0

    1

    2 3Nd

    A BN CN =

    + +

    X is the input vector and driven separately in accordance with the modulation scheme.

    For direct modulation current (I) is injected and thus X can be given as:

    0

    X 0

    /

    DM

    i

    I

    qV

    =

    (5.22)

    When amplitude modulated signal is injected into the SRL, X can be described as:

    0 0 0

    0 0

    / cos

    X sin / 2

    0

    inj

    AM inj inj

    zS S

    z S S

    =

    (5.23)

    Similarly phase modulated signal injected into the SRL can be given as:

    0 0

    0

    2 sin

    X cos

    0

    PM inj

    zS

    z

    =

    (5.24)

    5.6 Frequency ResponseThe frequency response of the output perturbation may be found by inverting the state

    transition matrix M in equation (5.20) and solving under the respective input

    modulated perturbations.

    For direct modulation using input modulated perturbation in equation (5.22)

    1 1

    0

    M X M 0

    /

    DM

    i

    S

    I

    N qV

    = =

    (5.25)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    120

    Similarly using amplitude modulation, frequency response of OIL-SRL using

    amplitude modulated input perturbations in equation (5.23)

    0 0 0

    1 1

    0 0

    / cos

    M X M sin / 2

    0

    inj

    AM inj inj

    S zS S

    z S S

    N

    = =

    (5.26)

    Frequency response using phase modulation can be found by using equation (5.24), as

    phase modulated input perturbations

    0 0

    1 1

    0

    2 sinM X M cos

    0

    PM inj

    S zSz

    N

    = =

    (5.27)

    Equations (5.25)-(5.27) consist of the same system matrix M so the poles for

    frequency response using any modulation scheme will be the same and can be

    determined by solving the determinant of the matrix M as:

    3 2det( ) j A j B C = + +M (5.28)

    where

    332211 aaaA ++=

    311321123322332211 )( aaaaaaaaaB ++=

    223113332112312312332211 aaaaaaaaaaaaC +=

    Due to the same determinant all the modulation schemes share the same resonance

    frequency and damping factor. The resonance enhancement in the injection locked

    laser has been extensively studied [5]. The equation (5.28) can be modified to

    determine the resonance frequency and damping factor as:

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    121

    ( )( )

    ( )

    2 2det( )

    1 1

    2 2

    p R

    p R R

    M j j

    j j j j j

    = + +

    = + + + +

    (5.29)

    Where ,p R

    and are low frequency roll-off pole, resonance frequency and

    damping factor respectively. According to [5]-[6] they can be given as:

    ( )2 13 31 12 21R a a a a = + (5.30)

    and

    11 22 33A a a a = = + + (5.31)

    5.6.1Response to SRL current modulationIn the case of direct modulation of OIL-SRL, the continuous wave light is injected

    from the master laser to the slave SRL. Classically for direct modulation response the

    output is photon density modulation and thus the frequency response can be given as

    using equation (5.25)

    CBjAj

    ZjM

    I

    SjH ddirdir

    ++

    +==

    23.)(

    (5.32)

    where . 13i

    dir aqV

    =

    and dZ is the zero of the system and it may expressed as:

    12 23 22 13

    13

    d

    a a a aZ

    a

    =

    5.6.2Response to amplitude modulation in optical injectionFor amplitude modulation, the output is the photon density modulation of the slave

    SRL and the input is the amplitude modulated signal from the amplitude modulator.

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    122

    Thus the frequency response using equation (5.26) for amplitude modulated OIL-SRL

    system may be given as:

    1 2

    3 2

    ( )( )( ) AM AM AM AM

    inj

    j Z j Z SH j M

    S j A j B C

    + += =

    + + (5.33)

    where 00

    0

    cosAMinj

    SM z

    S= and 1AMZ and 2AMZ are zeros and they may be expressed

    as:

    1 33 0

    1AM g n

    NdZ a v g S = = +

    0

    2cos

    zZAM =

    5.6.3Response to phase modulation in optical injectionSimilarly for phase modulated injection locking system, the input is phase modulated

    light signal injected from the phase modulator and the output is the phase modulation

    of the slave laser and it can be given as by using (5.27):

    2

    3 2( )PM

    inj

    a b CH j

    j A j B C

    + += =

    + + (5.34)

    where

    0cosa z =

    ( )2 233 01 cosb z a = +

    Hence, the frequency response of slave SRL can be simply determined using equation

    (5.32) for direct modulation, (5.33) for amplitude modulation and (5.34) for the phase

    modulation.

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    5.7 Simulation Results and DiscussionSimulations and calculations are based on the SRL device very similar to which used

    in chapter 4. It is assumed that the device is biased at 100mA. Table 5.1 presents the

    basic parameter values used in the simulations of the frequency response of Slave

    SRL.

    Quantity Symbol Value

    Speed of Light c 83 10 m/sec

    Electron charge q 191.602 10 Coulumbs

    Refractive Index n 3.41

    Line-width enhancement factor 2.52 [24]

    Length of cavity L 1406 m

    Waveguide width wgW 2 mQuantum-well thickness qwT 6 nm

    Number of quantum wells qwN

    5

    Differential gainng

    20 26 10 m

    Confinement factor 0.62 Current injection efficiency

    i 0.5

    Carrier density at transparencytrN

    241.25 10 m-3 [24]

    Power coupling ratio T 0.5 Non radiative coefficient 82.1 10 sec

    -1

    [25]

    Radiative coefficient B 104.5 10 cm3/sec[25]Auger recombination coefficient C 295.83 10 cm6/s[25]

    Table 5.1 Injection locked SRL Parameters

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    5.7.1Stable Locking RangeIn injection locked lasers stable locking can be obtained by using Mogensen locking

    range [18]. In SRL it can be proved by considering following important facts.

    Firstly, in equation (5.14), the real solution to phase is found if and only if the

    absolute value of arcsine is less than and equal to unity. Hence,

    0arctan arctan

    2 2

    (5.35)

    Secondly in equation (5.15) for the stable gain, value of the carrier density must be

    less than its value at threshold. So,

    02

    (5.36)

    Combining (5.35) and (5.36), we get

    1

    0 cot

    2

    (5.37)

    Therefore, using equation (5.18) the locking range can be given as:

    ( )20 0

    1inj inj

    inj inj inj

    S S

    S S + (5.38)

    The third important fact is the stability check on the region of convergence (ROC).

    Considering the system determinant in equation (5.28)

    3 2det( ) j A j B C = + +M (5.39)

    The solution becomes unstable, when the poles of frequency response i.e. the real

    parts of the roots of determinant become positive and can be determined by solving

    the equation (5.39) computationally. This reduces the locking region on the positive

    side. It also finds out the boundary between stable locking region (SLR) and unstable

    locking region (ULR).

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    Finally, it must also be taken into account that at high injection ratios the output field

    magnitude can diverge significantly from its free-running value. For stable behaviour

    0 fS S> , however at high injection ratios and negative detuning frequencies steady-

    state field value reduces as compared to free-running field this results in further shrink

    of stable locking region on the negative side of the locking region. The injection ratio

    used for the simulations is defined as the logarithmic value of Rinj and can be given

    as:

    10 log 10loginj

    inj

    SR R

    S= =

    Figure 5.1 illustrates all these boundaries of the locking range. For the weak injection

    FWM can be observed in the unlocked region [26]. The ULR is chaotic region which

    may be locked or a sizeable power may be transferred to other side longitudinal

    modes [26]-[28]. The boundary between the ULR and SLR is also called Hopf

    bifurcation boundary [28]. The focus of this chapter is stable locking region and is

    illustrated as the coloured region in the map. Thus the all the simulations are

    performed in the stable locking region.

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    Figure 5.1 Locking range of SRL illustrates stable locking range (SLR) and

    unstable locking range (ULR)

    5.7.2Frequency response simulationsIn chapter 4, the measurements of frequency response of slave SRL in the master-

    slave OIL configuration show its dependence on the optical injection power and the

    detuning frequency. Enhancement in the 3-dB bandwidth and the resonance

    frequency has been found due to increase in these factors. The frequency response for

    different values of the optical injection ratio and the detuning frequency can be

    plotted using equations (5.32)-(5.34) for direct modulation, amplitude modulation,

    phase modulation, chirp due to phase and chirp due to amplitude respectively.

    / 2 =

    1cot =

    0 fS S> boundary

    ROC

    boundary

    Increase in

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    127

    Free-running response of the SRL is simulated by setting injection parameters to zero

    and the SRL is biased at 200mA. The modulation bandwidth of free-running SRL is

    2.2 GHz and the response is shown in Figure 5.3 (a).

    5.7.2.1 Effects of optical injection ratio

    To study the effects of injection ratio on the frequency response of OIL-SRL, the

    equations (5.30) and (5.31) are simulated for resonance frequency and damping factor

    respectively. The change in the resonance frequency is shown in Figure 5.2 (a) while

    Figure 5.2 (b) is about the change in the damping factor with respect to the change in

    the optical injection ratio. Figure 5.2 shows very clearly that the resonance frequency

    and damping factor increases with the increase in the injection ratio. In Figure 5.2 the

    detuning frequency is kept constant at 3.5GHz.

    Figure 5.2 Effects of optical injection ratio on (a) resonance frequency (b)

    damping factor of OIL-SRL

    2 4 6 8 104

    7

    10

    12x 10

    10

    Injection Ratio (dB)

    Resonanc

    eFrequency(rad/sec)

    2 4 6 8 101.5

    2.5

    3.5

    4.5

    5.5x 10

    10

    Injection Ratio (dB)

    Damp

    ingFactor(1/sec)

    (b)(a)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    128

    To study the effects of injection ratio on the frequency response of SRL using direct

    modulation, amplitude modulation and phase modulation, the detuning frequency is

    kept constant at 3.5 GHz. Figure 5.3 (a) and (b) show the frequency response curves

    to direct modulation and amplitude modulation respectively. Various values of

    injection ratio from 2dB to 10 dB as shown in the legend in Figure 5.3(a) are used in

    the simulations. The responses are normalised to unity at zero modulation frequency

    to compare 3-dB points for the bandwidth.

    (a)

    (b)

    Figure 5.3 Frequency response (a) direct modulation (b) Amplitude modulation

    with changing optical injection and detuning frequency is fixed to

    3.5GHz

    108

    109

    1010

    1011

    -25

    -20

    -15

    -10

    -5

    0

    5

    10

    15

    Frequency (Hz)

    Response[10log(mW/mA)]

    Free-running

    2 dB

    4 dB

    6 dB

    8 dB

    10 dB

    108

    109

    1010

    1011

    -20

    -10

    0

    10

    20

    Modulation Frequency (Hz)

    Respon

    se(dB)

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    Figure 5.3 (a) shows the small signal response of OIL-SRL to direct modulation.

    Frequency response broadens with the increase in the injection ratio while its

    resonance peak drops. It is because the increase in the damping factor and the

    resonance frequency. The dip between the DC and the resonance is mainly due to

    the real polep in the system response and is also known as roll-off factor. It is

    shown in Figure 5.3 (a) that this low-frequency roll-off factor shrinks the 3-dB

    frequency with increasing injection ratio. Figure 5.3 (b) shows the frequency

    response of OIL-SRL to the amplitude modulated injection. This response also

    depends on the optical injection ratio and the resonance peak broadens with increasing

    injection ratio. The benefit of using intensity modulation is that dependence on the

    roll-off factor is decreased with the increase in the injection ratio.

    Figure 5.4 shows the small signal response of OIL-SRL to phase modulated injection.

    The response is simulated as linear function of ratio of output phase of the OIL-SRL

    to the phase of the injected light. Thus the response curves are different from the

    results shown in work of E.K. Lau et. al. [6]. The response is equal to unity before the

    appearance of resonance. It is due to the fact that the output phase of SRL tracks the

    changes in the phase of injected light from the master laser. Various values of

    injection ratio from 2dB to a high 10 dB as shown in the legend in Figure 5.3(a) are

    used in the simulations. With increasing injection ratio the resonance moves to higher

    modulation frequency and the resonance peak is broadened because the damping and

    resonance frequency both are enhanced. Thus increase in the injection power ratio

    causes the slave phase to track more quickly the phase of the master laser, thus the

    phase tracking bandwidth is enhanced. .

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    Figure 5.4 Frequency response phase modulation with changing optical injection

    and detuning frequency is fixed to 3.5 GHz

    5.7.2.2 Effects of detuning frequency

    It is also very interesting to study the frequency response by changing the detuning

    frequency and keeping the injection ratio unchanged. In similar fashion, the

    resonance frequency and damping factor are computed using equations (5.30) and

    (5.31) respectively by changing detuning frequency and injection ratio is fixed at

    10dB. Figure 5.5 (a) shows that the resonance frequency increases with increase in

    the detuning frequency in the stable locking range from negative to the positive

    region. . The damping factor decreases with increasing detuning frequency from

    negative to the positive edge of the locking range as shown in Figure 5.5 (b).

    108

    109

    1010

    1011

    -10

    -5

    0

    5

    10

    Modulation Frequency (Hz)

    Resp

    onse(rad/rad)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    Figure 5.5 Effects of detuning frequency on (a) resonance frequency (b) damping

    factor of OIL SRL

    To study the effects of detuning frequency on the small signal response of OIL-SRL

    using direct modulation and amplitude modulation injection ratio is kept fixed to

    10dB. Figure 5.6 shows the frequency response curves at various values detuning

    frequency from the negative edge to the positive edge of the stable locking range

    given in Figure 5.1. The values of detuning frequency used in the simulations are

    shown in the legend in Figure 5.6 (b). The responses are normalised to unity at zero

    modulation frequency to compare 3-dB points for the bandwidth.

    The small signal response of slave OIL-SRL due to direct modulation is shown in

    Figure 5.6 (a). When the detuning frequency is increased from the negative edge to

    the positive of locking range, due to increase in the resonance frequency enhancement

    in the resonance peak is observed. But the resonance peak narrows because the

    -15 0 15 30 450

    0.5

    1

    1.5

    2

    2.5

    3

    3.5x 10

    11

    Detuning Frequency (GHz)

    Re

    sonanceFrequency(rad/sec)

    -15 0 15 30 450

    1

    2

    3

    4

    5x 10

    11

    Detuning Frequency (GHz)

    DampingFactor(1/sec)

    (a)(b)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    132

    damping factor decreases with increasing detuning frequency. Similarly when the

    detuning frequency is changed from negative edge to the positive edge of the locking

    range, the resonance peak becomes narrow and it height is enhanced and moves to the

    higher modulation frequency. Figure 5.6 (b) shows the response to the intensity

    modulation, when the detuning frequency is -10 GHz, the response is highly damped

    and resonance peak is almost flat. But when the detuning frequency is increased, the

    resonance peak starts to appear and the response becomes better for the data

    modulation applications. The further increase in the detuning frequency enhancement

    in the resonance peak is observed and it approaches 18dB higher at 45 GHz detuning

    frequency which is very close to the positive edge of the locking range. This high

    resonance is suitable for the RF applications. After 48GHz the response enters the

    unstable locking region (ULR). The enhancement in the bandwidth of 100 GHz is

    predicted.

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    (a)

    (b)

    Figure 5.6 Frequency response of OIL-SRL using (a) direct modulation (b)

    Amplitude modulation with changing detuning frequency with 10 dB

    fixed injection ratio value

    Figure 5.7 shows the effects of detuning frequency on response of the phase of the

    slave laser (SRL) to the phase of the master laser in the injection locked system. In

    the simulations same values of detuning frequency are used as shown in the legend in

    Figure 5.6 (a) and injection ratio is fixed to 10 dB. As the detuning frequency is

    increased the enhancement in the resonance peak is observed. When the detuning

    108

    109

    1010

    1011

    -25

    -20

    -15

    -10

    -5

    0

    5

    Modulation Frequency (Hz)

    Response[10log(mW/m

    A)]

    - 10 GHz

    0 GHz

    10 GHz

    25 GHz

    45 GHz

    108

    109

    1010

    1011

    -10

    -5

    0

    5

    10

    15

    20

    Modulation Frequency (Hz)

    Response(dB)

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    134

    frequency is -10 GHz, the response is highly damped and resonance is not in the

    picture. But when the detuning frequency is increased, the resonance peak starts to

    appear and the response becomes better for the data modulation applications. When

    the detuning frequency is made 45 GHz the big rise ( 10 ) in the resonance is

    observed and it is shown in Figure 5.7. The resonance frequency and damping factor

    can be controlled by a maintaining a detuning frequency to get the maximum phase

    tracking bandwidth.

    Figure 5.7 Frequency response of OIL-SRL to phase modulation with changing

    detuning frequency and 10 dB fixed injection ratio value.

    It is discussed above that OIL-SRL system depends on two factors i.e. injection ratio

    and detuning frequency. When the injection ratio is increased the resonance

    frequency and the damping factor both are enhanced, as a result the resonance peak of

    the response broadens thus 3-dB bandwidth of the slave SRL is enhanced. However,

    109

    1010

    1011

    -10

    -5

    0

    5

    10

    Modulation Frequency (Hz)

    Rpe(adrad

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    135

    when the detuning is increased the increase in the resonance frequency and decrease

    in the damping factor is observed.

    The above results show that the frequency response of OIL-SRL can be tuned for

    various applications. Narrow and huge resonance peak can be utilised for the RF

    applications when the response is tuned near the positive edge of the stable locking

    range. When the detuning frequency is set towards the negative edge of the locking

    range the damping is very high and the modulation bandwidth falls as well. However,

    when the injection parameters (injection ratio and detuning frequency) are managed in

    between the positive and negative edge, the system becomes very suitable for data

    modulation schemes with huge modulation bandwidth. In SRL enhancement in the

    modulation bandwidth of 100GHz is predicted. In addition the resonance can be

    tuned at any modulation frequency by changing the injection ratio and detuning

    frequency.

    5.8 Frequency ChirpThe frequency chirp is defined as the instantaneous change in the frequency of

    modulated output light of the laser. It is one of the most severe limitations along with

    the fibre chromatic dispersion to the maximum attainable value of the length-bit rate

    product in the data transmissions at 1550nm wavelength [20]. Although injection

    locking systems have provided sufficient reduction in the chirp [21]-[23] for high

    speed communication systems but most of the research is concentrated on the direct

    modulation in injection locked semiconductor lasers [22].

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    136

    However, in the intensity modulation (amplitude modulation) the significant measure

    that affects the system performances is the ratio between the fundamental frequency

    and the intensity modulation photon densities [21] and it is also referred as CPR

    (Chirp to power ratio). CPR indicates the amount of chirp when trying to achieve

    certain amount of amplitude modulation. It provides a frequency shift for a given

    small signal modulation power, thus it is a convenient measure of frequency

    modulation.

    G. Yabre has shown significant reduction in the CPR by strong injection locking in a

    directly modulated semiconductor laser [23]. In similar sense it is also reported by E.

    K. Lau et. al . have also described CPR as the magnitude of ratio of deviation in the

    output phase of the OIL-Laser to the deviation in its output intensity [7].

    In this thesis, it is attempted to derive expression for the frequency response of

    parasitic modulation in the output phase of OIL-SRL due to change in the intensity

    modulated input signal. So the frequency response for chirp to input modulated

    power can be given as by using equation (5.26) and normalised by multiplying

    modulation frequency:

    2

    1 1 1

    3 2( )chirp chirp

    in j

    a j b cH j M

    S j A j B C

    += =

    + + (5.40)

    Where

    ( )

    ( ) ( )

    0

    1 0

    1 11 33 0 21 0 0

    1 31 13 11 33 0 0 31 23 21 33 0

    2

    sin

    sin 2 cos

    sin 2 cos

    chirp

    inj

    zM

    S

    a

    b a a a S

    c a a a a S a a a a

    =

    =

    = + +

    = +

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    137

    This expression is different to the CPR found in the literature as it is described as the

    magnitude of change in the output phase due to change in the output amplitude.

    (a)

    (b)

    Figure 5.8 Normalised chirp response with change in (a) injection ratio (b)

    detuning frequency

    Chirp response is simulated at different injection power and the detuning frequency is

    kept constant to 3.5GHz as shown in Figure 5.8(a). As discussed earlier, the

    resonance frequency and the damping factor increase with the increase in the injection

    ratio. Chirp response becomes almost flat and low in amplitude at high injection

    108

    109

    1010

    1011

    120

    140

    160

    180

    200

    Modulation Frequency (Hz)

    Response[10log(rad2/sec.m

    W)

    2 dB

    4 dB

    6 dB

    8 dB10 dB

    108

    109

    1010

    1011

    120

    130

    140

    150160

    170

    180

    190

    Modulation Frequency (Hz)

    Response[10log(ra

    d2/sec.m

    W)]

    -10 GHz

    0 GHz

    10 GHz

    25 GHz

    45 GHz

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    138

    ratio. Figure 5.8(b) shows the chirp response at different detuning frequencies and

    fixed injection ratio of 10dB, resonance becomes narrow and enhanced with increase

    in detuning frequency. It is due to the fact that the damping factor decreases with the

    increase in the increase in the detuning frequency from the negative to the positive

    edge of the locking range.

    The equation (5.41) describes the frequency response of parasitic modulation in the

    output amplitude of injection locked SRL due to change in the phase of the modulated

    input signal. It is normalised with the output photon density and has been derived

    using equation 5.27.

    0 33/ 3 2

    0

    / ( )1( )

    injS

    inj

    S S j j aH j

    S j A j B C

    += =

    + + (5.41)

    The frequency response of change in amplitude due to phase modulation in equation

    (5.41) is simulated under change in injection ratio, change in detuning frequency and

    change in the injection ratio near the positive edge of the locking range. The

    simulation results in Figure 5.9 (a) are with increase in the injection ratio and

    detuning frequency value of 3.5 GHz is used. As discussed earlier the damping factor

    enhances while the resonance drops off with increase in the injection ratio, change in

    amplitude due to phase modulation becomes flat. The simulation results show that the

    response is very small at low modulation frequencies. Similarly its resonance

    increases with the increase as shown in Figure 5.9(b).

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

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    (a)

    (b)

    Figure 5.9 Frequency response of modulation change in amplitude due to phase

    modulation with change in (a) injection ratio (b) detuning frequency

    5.9 ConclusionIn this chapter, the modelling for frequency response and modulation bandwidth of

    SRL in the master-slave configuration using optical injection locking is discussed in

    detail. Frequency response of master laser modulated OIL-SRL under direct

    (current), amplitude and phase modulation are derived and simulated. It is observed

    108

    109

    1010

    1011

    -25

    -15

    -5

    5

    15

    25

    Modulation Frequency (Hz)

    Response[10log(1/rad)]

    2 dB

    4 dB

    6 dB

    8 dB

    10 dB

    108

    109

    1010

    1011

    -30

    -20

    -10

    0

    10

    20

    30

    Modulation Frequecy (Hz)

    Response[10log(1/rad)

    -10 GHz

    0 GHz

    10 GHz

    25 GHz

    45 GHz

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    that the frequency response of OIL-SRL depends on detuning frequency and external

    optical injection ratio between the master laser and the slave SRL. The linear

    response of OIL-SRL under phase modulation has shown that the slave-SRL phase

    tracks the phase of the master laser and this tracking bandwidth increases with the

    increase in the injection ratio and maintaining detuning frequency between the

    negative and positive edge of the locking range. Enhancement in the modulation

    bandwidth of to be 100GHz is found between negative to positive detuning and

    increasing injection power ratio. In chapter4, the 3-dB bandwidth of slave SRL has

    been measured to be 40GHz. This scheme readily lends itself for monolithic

    integration due to the unidirectional lasing characteristics of the SRL as already

    demonstrated in [29]. This scheme may leads to a low-cost source in optical

    communication systems with high speed.

    The parasitic phase modulation response due to amplitude modulation (chirp

    response) is derived and simulated. Similarly parasitic amplitude modulation due to

    phase modulation response is also investigated. They are found to be not very high at

    low modulation frequencies but with the increase in the resonance frequency there is

    resonance in both the responses respectively. The chirp response investigated in this

    chapter is different from CPR found in the literature [7], [23].

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    Chapter 5 Frequency Response of Injection Locked Semiconductor Ring Lasers

    141

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