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BK TP.HCM 2010 dce Chapter 1 INTERGRATED-CIRCUIT LOGIC FAMILIES Faculty of Computer Science and Engineering Department of Computer Engineering ©2010, CE Department
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Chapter1_Integrated-Circuit Logic Famaily

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Page 1: Chapter1_Integrated-Circuit Logic Famaily

BKTP.HCM

2010dce

Chapter 1INTERGRATED-CIRCUIT LOGIC FAMILIES

Faculty of Computer Science and EngineeringDepartment of Computer Engineering

©2010, CE Department

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2010dce Outline

• Digital IC Terminology• TTL Logic Family• MOS Technology• Open-Collector/Open-Drain Ouputs• Tristate (Three-State) Logic Outputs• IC Interfacing

©2010, CE Department 2

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Digital IC Terminology

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Current and Voltage ParametersHIGH logic:1 ; LOW logic :0VIH(min) – High Level Input VoltageVIL(max) – Low Level Input VoltageVOH(min) – High Level Output VoltageVOL(max) – Low Level Output VoltageIIH – High Level Input CurrentIIL – Low Level Input CurrentIOH – High Level Output CurrentIOL – Low Level Output Current

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Fan-out• Loading factor• The maximum number of logic inputs that an

oputput can drive reliably.

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Propagation Delays

tPLH: Delay time in going from 0 1 (LOW HIGH)tPHL: Delay time in going from 1 0 (HIGH LOW)

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Power Requirement

• TTL devices: VCC• MOS devices: VDD• ICCH: all outputs are HIGH• ICCL: all outputs are LOW

ICC(avg)=(ICCH+ICCL)/2PD(avg)=Icc(avg).Vcc

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Speed-Power Product• Digital IC families desire:

– Higher speed (shorter gate propagation delay) : S– Lower power dissipation: P– Measuring and comparing the overall performance of

an IC.

Speed-power product = S * P

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Noise Immunity

– high-state noise marginVNH = VOH(min) – VIH(min)

– low-state noise marginVNL = VIL (max) – VOL(max)

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Current-Sourcing – Current-Sinking Logic

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IC Packages• DIP (dual-in-line package)

– Lead pitch: spacing between pins (100 mils)• Surface-mount

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TTL Logic Family• TTL inputs: multiple-emitter• TTL outputs: totem-pole

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TTL NAND Gate• LOW State

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TTL NAND Gate• HIGH State

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TTL NAND Gate• Current-Sinking and Current Sourcing

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TTL NAND Gate• Totem-Pole Output

– Advantage• Low power dissipation• Fast rise-time

– Disadvantage• Large current spike during switching form LOW to HIGH

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TTL NOR Gate

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TTL Series• Standard TTL, 74• Schottky TTL, 74S• Low-Power Schottky TTL, 74LS (LS-TTL)• Advanced Schottky TTL, 74AS (AS-TTL)• Advanced Low-Power Schottky TTL, 74ALS• 74F-Fast TTL

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TTL Data Sheets• Supply Voltage – Temperature Range• Voltage Levels

– VIL, VOL, VOH, VIH VNL, VNH

• Maximum Voltage Ratings• Power Dissipation

– ICCH, ICCL ICC(avg) PD(avg)• Propagation Delays

– tPLH, tPHL tpd(avg)

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TTL Data Sheets

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TTL Data Sheets• Loading and Fan-out

fan-out(LOW)

fan-out(HIGH)

• Example: In datasheet of 74ALS00– IOL(max) = 8 mA, IIL(max) = 0.1 mA– IOH(max) = 0.4 mA = 400 μA, IOL = 20 μA

fan-out(LOW) = 80, fan-out(HIGH) = 20

(max)(max)

IL

OLII=

(max)(max)

IH

OHII=

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TTL Data Sheets• Loading and Fan-out

IOL = Σ IIL IOH = Σ IIH

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Other TTL Characteristics• Unconnected Inputs (Floating)

– Open input acts exactly like a logical 1 (HIGH)

• Unused Inputs– Left disconnected (undesirable – antenna)– Connect to VCC(+5V) through a 1-kΩ resistor or to

GND to produce for a constant-output logic level– Tied to a used input

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Other TTL Characteristics• Tied-Together Inputs

– Represent a load – Sum of the load current rating– NAND, AND gates: LOW-state input load – single

input

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Other TTL Characteristics• Biasing TTL Inputs Low

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Other TTL Characteristics• Current Transients

– high-amplitude current spike occurs when a totem-pole TTL output goes from LOW to HIGH

– Power-supply decoupling: capacitors connect fromVCC to GND (0.01 μF or 0.1 μF)

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MOSFET• Metal-oxide-semiconductor field-effect transistor.• Advantage

– Simple, inexpensive to fabricate– Small, little power consumption– Suited for complex ICs– Faster than 74, 74LS, 74ALS TTL Series

• Disadvantage– susceptibility to static-electricity damage

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Enhancement MOSFET• Use in digital ICs

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Basic MOSFET Switch

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Digital MOSFET Circuit• N-MOS or P-MOS

– Use MOSFET as a switch– Implement all resistors using channel resistance of a

MOSFET– Simple circuits and fabrication processes

• C-MOS (complementary MOS)– Use both P- and N-channel MOSFET– Increase complexity of IC fabrication process, lower

packing densityFaster and less power consumption

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N-MOS Inverter

• Gate of Q1 connected to the drain always ON

pull-up resistor 100 kΩ

Pull-up resistor

Switch on/off

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Complementary MOS Logic• CMOS Inverter

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Complementary MOS Logic• CMOS NAND Gate

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Complementary MOS Logic• CMOS NOR Gate

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CMOS Series• 4000/14000 Series• 74C Series• 74HC/HCT (High-Speed CMOS)• 74AC/ACT (Advanced CMOS)• 74AHC/74AHCT (Advanced High-Speed CMOS)• BICMOS 5-Volt Logic

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Low-Voltage Technology• CMOS Family

– 74LVC (Low-Voltage CMOS)– 74ALVC (Advanced Low-Voltage CMOS)– 74LV (Low-Voltage)– 74AVC (Advanced Very-Low-Voltage CMOS)

• BiCMOS Family– 74LVT (Low-Voltage BiCMOS Technology)– 74LVT (Advanced Low-Voltage BiCMOS Technology)– 74ALB (Advanced Low-Voltage BiCMOS)

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CMOS Characteristics (1)• Power-Supply Voltage• Logic Voltage Levels

– Not sink/source any significant amount of current– VOL: close to 0 V, VOH: close to VDD

• Noise Margins: greater than TTL– VNH = VOH(min) – VIH(min)– VNL = VIL (max) – VOL(max)

• Power Dissipation– Extremely low Suitable for applications using

battery power

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CMOS Characteristics (2)• PD increases with Frequency

– Increase in proportion to the frequency at switchingstates of the circuit (LOW to HIGH)

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CMOS Characteristics (3)• Fan-Out: depend on

– Permissible maximum propagation delay– Frequency

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CMOS Characteristics (4)• Switching Speed

– Faster than N-MOS and P-MOS (low output resistance– 1 kΩ vs. 100 kΩ)

• Unused Inputs– Never left disconnected : susceptible to noise and

static charges– Tie to fixed voltage level (0V or VDD) or to another input

• Static Sentivity• Latch-Up

– Transistors stay ON permanently– Solution: Clamping diodes

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Output Combination (sharing a common wire)• Conventional CMOS outputs, TTL totem pole

outputs should never be tied together– Output voltage: in the indeterminate range– Damage the ICs

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Open-Collector/Open-Drain Outputs• Solution: remove the active pull-up transistor

– CMOS output circuits: open-drain ouputs– TTL totem pole output circuit: open-collector ouputs– Output LOW state: no problem– Output HIGH state: external pull-up resistor Rp

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Open-collector/drain outputs Application

Wired-AND connection

Open-collector/drain Buffer/Driver

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Tristate (Three-State) Logic Ouputs• Allow three possible output states:

– HIGH, LOW– High-impedance (Hi-Z): both pull-up and pull-down

transistors are turned OFF• Have an enable input (OE – output enable)

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Tristate (Three-State) Logic Ouputs• Advantage

– Tristate ICs output can be connected together– Low-impedance, high-speed characteristic

• Application: Tristate Buffers

Bus contention

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CMOS Transmission Gate (Bilateral Switch)• Pass signals in both directions• Digital and analog applications

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IC Interfacing• Connecting the output(s) to the input(s) of

different electrical charateristic systems.• Take advange of the strong points of each IC

family– High-speed, greater output current/voltage capability,

high frequency• Concerned problems

– Fan-out– Voltage and current parameters

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TTL Driving CMOS• Current: no problem• Output votages

– VOH(min) of TTL: too low when compared with VIH(min)of CMOS

– Solution: Pull-up resistor at TTL output

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TTL Driving CMOS• Driving High-Voltage CMOS

– Use TTL series from certain manufacturers that canoperate with an high-voltage output pull-up

– Utilize a voltage level-translator

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CMOS Driving TTL• Driving TTL in the HIGH State: no problem• Driving TTL in the LOW State:

– Excepting 4000B series, 74HC/74HCT series have notrouble driving a single TTL load of any series

– Concern fan-out problem– Use buffer to interface low-current CMOS to high-

current TTL

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CMOS Driving TTL• High-Voltage CMOS Driving TTL

– Use TTL series that can withstand high-voltage input– Use voltage level-translator

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Reference• Chapter 8, Digital System – Principles and

Applications, Ronald J.Tocci, Neal S. Widmer