FEATURES • WIDEBAND RESPONSE: fu = 2.9 GHz TYP at 3dB bandwidth • NOISE FIGURE: NF = 2.3 dB TYP at f = 1.5 GHz • POWER GAIN: GP = 20.5 dB TYP at f = 1.5 GHz • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V • HIGH DENSITY SURFACE MOUNTING: 6-pin super mini-mold package UPC3215TB 5V, SUPER MINIMOLD BIPOLAR ANALOG INTEGRATED CIRCUIT SI MMIC WIDEBAND AMPLIFIER VCC = 5.0 V PIN = -30 dBm 25 1.0 0.3 0.1 20 15 10 5 0 3.0 Frequency, f (GHz) G , n i a G S ) B d ( INSERTION POWER GAIN vs. FREQUENCY DESCRIPTION The UPC3215TB is a Silicon Monolithic IC designed as a wideband amplifier. The UPC3215TB is suitable for systems requiring wideband operation from HF to L band. This IC is manufactured using a 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The pack- age is 6-pin super minimold suitable for surface mount. The UPC3215TB is manufactured according to stringent quality assurance standards to ensure highest reliability and consistent superior performance. APPLICATIONS • Systems requiring wideband operation from HF to L band. • DBS receivers and tuners ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5.0 V, ZS = ZL = 50 Ω) B T 5 1 2 3 C P U R E B M U N T R A P 6 0 S E N I L T U O E G A K C A P S E U L A V E C N E R E F E R S C I T S I R E T C A R A H C D R A D N A T S S L O B M Y S PSAT Saturated Output Power, PIN 5 . 3 + m B d m B d 0 = OIP3 Output Intercept Point f1 = 1.5 GHz, f2 0 1 + m B d z H G 1 0 5 . 1 = ΔGP 0 . 1 B d z H G 5 1 . 2 o t 1 . 0 = f , s s e n t a l F n i a G ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5.0 V, ZS = ZL = 50 Ω) B T 5 1 2 3 C P U R E B M U N T R A P 6 0 S E N I L T U O E G A K C A P X A M P Y T N I M S T I N U S N O I T I D N O C D N A S R E T E M A R A P S L O B M Y S ICC 5 . 7 1 0 . 4 1 5 . 0 1 A m ) l a n g i s o n ( t n e r r u C t i u c r i C GP P , z H G 5 . 1 = f , n i a G r e w o P IN - 5 . 0 2 5 . 8 1 B d m B d 0 3 - = 0 . 3 3 . 2 - B d z H G 5 . 1 = f , e r u g i F e s i o N F N fu Upper Limit Operating Frequency (The gain at fu is 3 dB down from the gain at 100 MHz) GHz 2.5 2.9 - - 4 4 9 3 B d z H G 5 . 1 = f , n o i t a l o s I L O S I RLIN - 5 1 0 1 B d z H G 5 . 1 = f , s s o L n r u t e R t u p n I RLOUT - 5 . 9 5 . 6 B d z H G 5 . 1 = f , s s o L n r u t e R t u p t u O P1dB - 5 . 1 - 4 - m B d z H G 5 . 1 = f , t n i o P n o i s s e r p m o C B d 1 DISCONTINUED
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BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3215TB · GP Power Gain, f = 1.5 GHz, P IN = -30 dBm dB 18.5 20.5 - NF Noise Figure, f = 1.5 GHz dB - 2.3 3.0 fu Upper Limit Operating Frequency
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FEATURES• WIDEBAND RESPONSE:
fu = 2.9 GHz TYP at 3dB bandwidth• NOISE FIGURE:
NF = 2.3 dB TYP at f = 1.5 GHz• POWER GAIN:
GP = 20.5 dB TYP at f = 1.5 GHz• SUPPLY VOLTAGE:
VCC = 4.5 to 5.5 V• HIGH DENSITY SURFACE MOUNTING:
6-pin super mini-mold package
UPC3215TB5V, SUPER MINIMOLD
BIPOLAR ANALOG INTEGRATED CIRCUIT
SI MMIC WIDEBAND AMPLIFIER
VCC = 5.0 VPIN = -30 dBm
25
1.00.30.1
20
15
10
5
03.0
Frequency, f (GHz)
G ,niaG
S)Bd(
INSERTION POWER GAINvs. FREQUENCY
DESCRIPTIONThe UPC3215TB is a Silicon Monolithic IC designed as awideband amplifier. The UPC3215TB is suitable for systemsrequiring wideband operation from HF to L band.This IC is manufactured using a 30 GHz fmax UHS0(Ultra High Speed Process) silicon bipolar process. The pack-age is 6-pin super minimold suitable for surface mount.
The UPC3215TB is manufactured according to stringentquality assurance standards to ensure highest reliabilityand consistent superior performance.
APPLICATIONS• Systems requiring wideband operation from HF to L band.• DBS receivers and tuners
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM 09/04/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
YTQREBMUN TRAP
UPC3215TB-E3-A 3K/Reel
ORDERING INFORMATION
Note: Embossed Tape, 8 mm wide. Pins 1, 2 and 3 face perforatedside of tape.
lanretnInoitpircseDniPdeilppAniPniPNo. Name Voltage Voltage Equivalent
tiucriC)V(1 Input — 0.82 Signal input pin. An internal matching circuit, configured
with resistors, enables 50 Ω connection over a wideband. A multi-feedback circuit is designed to cancelthe deviations of hFE and resistance. This pin must becoupled to the signal source with capacitor for DC cut.
2 GND 0 — Ground pins. These pins should be connected to systemeht no nrettap dnuorG .ecnatcudni muminim htiw dnuorg3
dnuorg eht llA .elbissop sa ediw sa demrof eb dluohs draob5pins must be connected together with wide ground patternto decrease impedance difference.
4 Output — 3.8 Signal output pin. An internal matching circuit, configuredwith resistors, enables 50 Ω connection over a wideband. This pin must be coupled to next stage with capacitorfor DC cut.
6 VCC 4.5 to 5.5 — Power supply pin. This pin should be externally equippedwith a bypass capacitor to minimize ground impedance.