SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES • ALSO AVAILABLE IN CHIP FORM 39 (SOT 143 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 39R (SOT 143R STYLE) DESCRIPTION 18 (SOT 343 STYLE) PART NUMBER 1 NE68818 NE68819 NE68830 NE68833 NE68839/39R EIAJ 2 REGISTERED NUMBER 2SC5195 2SC5193 2SC5191 2SC5192/92R PACKAGE OUTLINE 19 30 33 39 MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX 4.5 5 4 4.5 4 4.5 4 4.5 9.5 9 8.5 9 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.5 1.5 1.5 1.5 3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5 8 6.5 6.5 9 Forward Current Gain 3 at VCE = 1 V, IC = 3 mA 80 160 80 160 80 160 80 160 80 160 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100 CRE 4 Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.65 0.8 0.7 0.8 0.75 0.85 0.75 0.85 0.65 0.8 PT Total Power Dissipation mW 150 125 150 200 200 RTH(J-A) Thermal Resistance (Junction to Ambient) °C/W 833 1000 833 625 625 RTH(J-C) Thermal Resistance(Junction to Case) °C/W 3. Pulsed measurement, PW ≤ 350 μs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) California Eastern Laboratories 2SC5194 18 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP fT Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, I C = 3 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, I C = 7 mA, f = 2.0 GHz Insertion Power Gain at VCE = 1V, IC = 3 mA, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC = 20 mA, f = 2.0 GHz GHz 4 5 fT GHz 10 NFMIN dB 1.7 2.5 NFMIN dB 1.5 |S21E| 2 dB 3.0 4.0 |S21E| 2 dB 8.5 hFE NEC's NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688's low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount pack- age styles, and in chip form. ELECTRICAL CHARACTERISTICS (TA = 25°C) DISCONTINUED
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SURFACE MOUNT NPN SILICONHIGH FREQUENCY TRANSISTOR
NE688SERIES
FEATURES• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTORCURRENT: IC MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACEMOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
39 (SOT 143 STYLE)
19 (3 PIN ULTRA SUPERMINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
18 (SOT 343 STYLE)
PART NUMBER1 NE68818 NE68819 NE68830 NE68833 NE68839/39REIAJ2 REGISTERED NUMBER 2SC5195 2SC5193 2SC5191 2SC5192/92R
PACKAGE OUTLINE 19 30 33 39
MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
4.5 5 4 4.5 4 4.5 4 4.5
9.5 9 8.5 9
1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5
1.5 1.5 1.5 1.5
3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5
8 6.5 6.5 9
Forward Current Gain3 atVCE = 1 V, IC = 3 mA 80 160 80 160 80 160 80 160 80 160
ICBO Collector Cutoff Currentat VCB = 5 V, IE = 0 mA nA 100 100 100 100 100
IEBO Emitter Cutoff Currentat VEB = 1 V, IC = 0 mA nA 100 100 100 100 100
RTH(J-C) Thermal Resistance(Junction to Case) °C/W3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.4. The emitter terminal should be connected to the ground terminal ofthe 3 terminal capacitance bridge.
Notes:1. Precaution: Devices are ESD sensitive. Use proper handling procedures.2. Electronic Industrial Association of Japan.
30 (SOT 323 STYLE) 33 (SOT 23 STYLE)
California Eastern Laboratories
2SC519418
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYPfT Gain Bandwidth Product at
VCE = 1V, IC = 3 mA, f = 2.0 GHzGain Bandwidth Product atVCE = 3V, IC = 20 mA, f = 2.0 GHzMinimum Noise Figure atVCE = 1 V, IC = 3 mA, f = 2.0 GHzMinimum Noise Figure atVCE = 3 V, IC = 7 mA, f = 2.0 GHzInsertion Power Gain atVCE = 1V, IC = 3 mA, f = 2.0 GHzInsertion Power Gain atVCE = 3V, IC = 20 mA, f = 2.0 GHz
GHz 4 5fT
GHz 10NFMIN
dB 1.7 2.5NFMIN
dB 1.5|S21E|2
dB 3.0 4.0|S21E|2
dB 8.5hFE
NEC's NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688's low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series isavailable in six different low cost plastic surface mount pack-age styles, and in chip form.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
DISCONTIN
UED
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 9
VCEO Collector to Emitter Voltage V 6
VEBO Emitter to Base Voltage V 2.0
IC Collector Current mA 100
TJ Operating JunctionTemperature °C 150
TSTG Storage Temperature °C -65 to +150
NE688 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
200
100
050 100 150
Free Air
0
Free Air
150
100
50
00 50 100 150
NE68818, NE68830D.C. POWER DERATING CURVE
NE68819D.C. POWER DERATING CURVE
COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGE
Tot
al P
ower
Dis
sipa
tion,
PT (
mW
)
Free Air
200
100
00 50 100 150
30
25
20
15
10
5
00 2.5 5 7
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
IB = 20 µA
NE68833, NE68839D.C. POWER DERATING CURVE
Tot
al P
ower
Dis
sipa
tion,
PT (
mW
)
Tot
al P
ower
Dis
sipa
tion,
PT
(mW
)
Ambient Temperature TA (°C)Ambient Temperature TA (°C)
Ambient Temperature TA (°C) Collector to Emitter Voltage, VCE (V)
Col
lect
or C
urre
nt, I
C (
mA
)
Notes:1. Operation in excess of any one of these parameters may result
in permanent damage.
DISCONTIN
UED
NE688 SERIES
DC
Cur
rent
Gai
n, h
FE
Collector Current, IC (mA)
8
6
4
2
01 2 5 10 20 50 100
VCE = 1 V
VCE = 3 V
f = 2 GHz
Inse
rtio
n P
ower
Gai
n, |S
21e |
2 (d
B)
Collector Current, IC (mA)
f = 2 GHz5
4
3
2
1
01 2 5 10 20 50 100
VCE = 1 V
VCE = 3 V
Noi
se F
igur
e, N
F (
dB)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE68833NOISE FIGURE vs. COLLECTOR CURRENT
NE68833INSERTION GAIN vs. COLLECTOR CURRENT
200
100
00.1 0.2 0.5 1 2 5 10 20 50 100
VCE = 1 V
D.C. CURRENT GAIN vs.COLLECTOR CURRENT
Collector Current, IC (mA)
Gai
n B
andw
idth
Pro
duct
, fT (
GH
z)f = 2 GHz
10
8
6
4
2
01 2 5 10 20 50 100
VCE = 1 V
VCE = 3 V
NE68839GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
VCE = 1 V
0 0.5 1
100
50
20
2
0.5
1
0.2
0.1
0.05
0.02
0.01
10
5
Col
lect
or C
urre
nt, I
C (m
A)
COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, VBE (V)
Fee
d-ba
ck C
apac
itanc
e, C
RE (
pF)
Collector to Base Voltage, VCB (V)
1.0
0.5
0.11 5 10 20
f = 1 MHz
NE68830FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
DISCONTIN
UED
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE688 SERIES
Coordinates in OhmsFrequency in GHz
(VCE = 0.5 V, IC = 0.5 mA)
NE68819VCE = 0.5 V, IC = 0.5 mAFREQUENCY S11 S21 S12 S22 K MAG1
LEADCONNECTIONS1. Emitter2. Collector3. Emitter4. Base
Note:1. Lead material: Cu
Lead plating: PbSn
NE688 SERIES
PART NUMBER QUANTITY PACKAGING
NE68800 100 Waffle Pack
NE68818-T1-A 3000 Tape & Reel
NE68819-T1-A 3000 Tape & Reel
NE68830-T1-A 3000 Tape & Reel
NE68833-T1-A 3000 Tape & Reel
NE68839-T1-A 3000 Tape & Reel
NE68839R-T1 3000 Tape & Reel
ORDERING INFORMATION
2.8+0.2 -0.3
+0.10 -0.05
(LEADS 2, 3, 4)
0.6+0.10 -0.05
0.16 +0.10-0.06
5˚5˚
0.81.1+0.2 -0.1
1
2 3
0 to 0.1
4
0.4
2.9 ± 0.2 0.95
0.85
1.9
1.5+0.2 -0.1
41.0
3
2.4
2
1.9
1.0
1
+0.10 -0.05
(LEADS 1, 3, 4)
0.6+0.10 -0.05
0.16+0.10-0.06
5˚5˚
0.81.1+0.2
-0.1
1
2 3
0 to 0.1
40.4
2.8+0.2 -0.3
1.5+0.2 -0.1
2.9 ± 0.2
0.85
0.95
1.8
41.0
3
2.4
2
1.9
1.0
1
Life Support ApplicationsThese NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
05/18/2005
DISCONTIN
UED
3-140
4590 Patrick Henry Drive Santa Clara, CA 95054-1817Telephone: (408) 919-2500Facsimile: (408) 988-0279
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Restricted Substanceper RoHS
Concentration Limit per RoHS (values are not yet fixed)
Concentration containedin CEL devices
-A -AZLead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
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